Q67000-S224

BSP 171 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 171 Type BSP 171 VDS -60 V ID -1.7 A RDS(on) 0.35 Ω Package SOT-223 Marking BSP 171 Ordering Code Q67000-S224 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values -1.7 Unit A ID IDpuls -6.8 TA = 24 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 8 mJ ID = -1.7 A, VDD = -25 V, RGS = 25 Ω L = 3.23 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 V W TA = 25 °C Semiconductor Group 1 18/02/1997 BSP 171 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -1.4 -0.1 -10 -10 0.22 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.35 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -1.7 A Semiconductor Group 2 18/02/1997 BSP 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1 1.55 720 290 120 - S pF 960 435 180 ns 16 25 VDS≥ 2 * ID * RDS(on)max, ID = -1.7 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.3 A RGS = 50 Ω Rise time tr 70 105 VDD = -30 V, VGS = -10 V, ID = -0.3 A RGS = 50 Ω Turn-off delay time td(off) 230 310 VDD = -30 V, VGS = -10 V, ID = 0.3 A RGS = 50 Ω Fall time tf 280 375 VDD = -30 V, VGS = -10 V, ID = -0.3 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSP 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A -0.9 300 0.82 -1.7 -6.8 V -1.2 ns µC Values typ. max. Unit ISM VSD trr Qrr TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -3.4 A, Tj = 25 °C Reverse recovery time VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Semiconductor Group 4 18/02/1997 BSP 171 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -1.8 A 2.0 W Ptot 1.6 1.4 ID -1.4 -1.2 1.2 -1.0 1.0 -0.8 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 -0.6 -0.4 -0.2 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 18/02/1997 BSP 171 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -3.8 A -3.2 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 1.1 Ptot = k W 2 li jh g f VGS [V] a -2.0 b c -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 Ω RDS (on) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 b a a b c d ID -2.8 -2.4 -2.0 -1.6 -1.2 c e d e f g h di j k l e f gh ij -0.8 -0.4 0.0 VGS [V] = 0.1 0.0 V -5.0 a b c d e f -2.5 -2.0 -3.5 -4.0 -4.5 -5.0 -6.0 -3.0 g h i j -7.0 -8.0 -9.0 -10.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 A -3.8 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -3.6 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 2.2 S ID -2.8 -2.4 -2.0 -1.6 -1.2 gfs 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -0.8 0.4 -0.4 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.2 0.0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 A -3.4 ID VGS Semiconductor Group 6 18/02/1997 BSP 171 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -1.7 A, VGS = -10 V 0.9 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω RDS (on) 0.7 0.6 0.5 VGS(th) -3.6 -3.2 -2.8 98% 0.4 0.3 0.2 -2.4 98% -2.0 typ -1.6 -1.2 typ 2% -0.8 0.1 0.0 -60 -20 20 60 100 °C 160 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 1 nF C 10 0 A IF -10 0 Ciss Coss 10 -1 -10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 18/02/1997 BSP 171 Avalanche energy EAS = ƒ(Tj ) parameter: ID = -1.7 A, VDD = -25 V RGS = 25 Ω, L = 3.23 mH 9 mJ Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -71 V -68 V(BR)DSS -66 EAS 7 6 5 4 3 2 1 0 20 40 60 80 100 120 °C 160 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Semiconductor Group 8 18/02/1997