Q67000-S237

SIPMOS® Small-Signal Transistor BSS 135 q q q q q q q VDS 600 V ID 0.080 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 G 2 D 3 S SS135 Package TO-92 BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 42 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 600 600 ± 14 ± 20 0.080 0.24 1.0 – 55 … + 150 ≤ 125 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 04.97 BSS 135 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.01 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.01 A Input capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) Values typ. max. Unit V(BR)DSS 600 – − 1.5 – − 0.7 V VGS(th) IDSS − 1.8 – – – – 10 40 100 200 100 nA µA nA IGSS – RDS(on) – 60 Ω gfs 0.01 0.04 110 8 3 4 10 15 20 – S pF – 150 12 5 6 15 20 30 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, ID = 0.2 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, ID = 0.2 A Semiconductor Group 2 BSS 135 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous reverse drain current TA = 25 ˚C Pulsed reverse drain current TA = 25 ˚C Diode forward on-voltage IF = 0.16 A, VGS = 0 Values typ. max. Unit IS – – – 0.80 0.080 0.240 A ISM – VSD – 1.30 V VGS(th) Grouping Range of VGS(th) Threshold voltage selected in groups P R S T U V W 1): Symbol ∆VGS(th) Limit Values min. – – 0.95 – 1.08 – 1.21 – 1.34 – 1.47 – 1.60 – 1.73 max. 0.15 – 0.80 – 0.93 – 1.06 – 1.19 – 1.32 – 1.45 – 1.58 Unit V V V V V V V V Test Condition – VGS(th) VDS1 = 0.2 V; VDS2 = 3 V; ID = 1 mA 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Semiconductor Group 3 BSS 135 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSS 135 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.01 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSS 135 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) Semiconductor Group 6