Q67000-S243

BSS 84 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 84 Type BSS 84 BSS 84 Pin 2 S Marking SPs Pin 3 D VDS -50 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Ordering Code Q62702-S568 Q67000-S243 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -0.13 TA = 30 °C DC drain current, pulsed IDpuls -0.52 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 18/02/1997 BSS 84 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.5 -0.1 -2 -1 5 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 -0.1 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -10 nA Ω 10 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.13 A Semiconductor Group 2 18/02/1997 BSS 84 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.05 0.085 30 17 8 - S pF 40 25 12 ns 7 10 VDS≥ 2 * ID * RDS(on)max, ID = -0.13 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Rise time tr 12 18 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Turn-off delay time td(off) 10 13 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Fall time tf 20 27 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSS 84 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.9 -0.13 -0.52 V -1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = -0.26 A, Tj = 25 °C Semiconductor Group 4 18/02/1997 BSS 84 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.14 A -0.12 0.40 W Ptot 0.32 0.28 0.24 ID -0.11 -0.10 -0.09 -0.08 0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160 -0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 18/02/1997 BSS 84 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C -0.30 A -0.26 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 32 Ptot = 0W k l j i h VGS [V] a -2.0 b -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 Ω RDS (on) 24 a b c d e f ID -0.24 -0.22 -0.20 -0.18 -0.16 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 c e g c d e f 20 fg h i j k 16 12 g i kj h d l -10.0 8 4 VGS [V] = b a a b c d e f -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 -2.5 g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 0 V -5.0 0.00 -0.04 -0.08 -0.12 -0.16 A -0.24 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -0.9 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.16 S ID -0.7 -0.6 gfs 0.12 0.10 -0.5 0.08 -0.4 0.06 -0.3 -0.2 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.04 0.02 0.00 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 VGS A ID -0.8 Semiconductor Group 6 18/02/1997 BSS 84 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.13 A, VGS = -10 V 26 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω 22 RDS (on) 20 18 16 14 VGS(th) -3.6 -3.2 -2.8 98% 12 10 -2.4 98% -2.0 -1.6 typ 8 6 4 2 0 -60 -20 20 60 100 °C 160 typ -1.2 2% -0.8 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 0 pF C 10 2 A IF -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 18/02/1997