Q67006-A9152

TLE 4266 5-V Low-Drop Voltage Regulator TLE 4266 Bipolar IC Features q q q q q q q q Output voltage tolerance ≤ ± 2 % Very low current consumption Low-drop voltage Overtemperature protection Reverse polarity proof Wide temperature range Suitable for use in automotive electronics Inhibit P-SOT223-4-2 Type TLE 4266 G w TLE 4266 GSV10 w New type Functional Description Ordering Code Q67006-A9152 Q67006-A9355 Package P-SOT223-4-2 (SMD) P-SOT223-4-2 (SMD) TLE 4266 G is a 5-V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The IC regulates an input voltage Vi in the range of 5.5 V < Vi < 45 V to VQrated = 5 V / 10 V. The maximum output current is more than 120 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is shortcircuit-proof and incorporates temperature protection that disables the IC an overtemperature. Dimensioning Information on External Components The input capacitor Ci is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with Ci, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ ≥ 10 µF and an ESR ≤ 10 Ω within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4266 Pin Configuration (top view) GND 4 1 2 3 VΙ Inh VQ AEP01734 Pin Definitions and Functions Pin 1 2 3 4 Symbol Function Input voltage; block to ground directly at the IC with a ceramic capacitor. Inhibit; low-active input. Output voltage; block to ground with a ≥ 10 µF capacitor. Ground VI Inh VQ GND Semiconductor Group 2 1998-11-01 TLE 4266 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: q q q Overload Overtemperature Reverse polarity Temperature Sensor 1 Control Amplifier Adjustment Bandgap Reference Saturation Control and Protection Circuit 3 Output Input Buffer 2 Inhibit 4 GND AEB01725 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4266 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Input Voltage Current Inhibit Voltage Output Voltage Current GND Current Temperature Junction temperature Storage temperature max. Unit Notes Vi Ii – 42 – 45 – V – – internally limited Ve – 42 45 V – VQ IQ –1 – 16 – V – – internally limited IM 50 – mA – Tj TS – – 50 150 150 °C °C – – Operating Range Input voltage Input voltage GSV 10-version Junction temperature Thermal Resistance Junction ambient Junction case Vi Vi Tj 5.5 10.5 – 40 45 45 150 V V °C – – – RthjA RthjC – – 100 25 K/W soldered K/W – Semiconductor Group 4 1998-11-01 TLE 4266 Characteristics VI = 13.5 V; – 40 °C ≤ Tj ≤ 125 °C Parameter Symbol Limit Values min. Output voltage Output voltage GSV 10-version Output-current limitation Current consumption Iq = Ii – IQ Current consumption Iq = Ii – IQ Current consumption Iq = Ii – IQ Drop voltage Load regulation Supply-voltage regulation Supply-voltage rejection Inhibit Inhibit on voltage Inhibit off voltage Inhibit current typ. 5 10.0 150 0 – 10 0.25 – 15 54 max. 5.1 10.2 – 10 400 15 0.5 40 30 – V V mA µA µA mA V mV mV dB 5 mA ≤ IQ ≤ 100 mA 6 V ≤ Vi ≤ 28 V 5 mA ≤ IQ ≤ 100 mA 6 V ≤ Vi ≤ 28 V – Unit Test Condition VQ VQ IQ Iq Iq Iq VDr ∆VQ ∆VQ 4.9 9.8 120 – – – – – – – Ve = 0 V; Tj ≤ 100 °C IQ = 1 mA IQ = 100 mA IQ = 100 mA1) IQ = 5 to 100 mA Vi = 6 V VI = 6 V to 28 V IQ = 5 mA fr = 100 Hz Vr = 0.5 VSS SVR Ve, on Ve, off Ie – 0.8 5 – – 15 3.5 – 25 V V µA – – Ve = 5 V 1) Drop voltage = Vi – VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at Vi = 13.5 V). Semiconductor Group 5 1998-11-01 TLE 4266 Input 5.5 V to 45 V 1 100 nF 3 Output Ιi 470 µF Vi Ve Ιe ΙQ 22 µF TLE 4266G 2 4 VQ AES01726 Measuring Circuit Input 5.5 V to 45 V 1 3 Output Ci 2 e.g. Kl. 15 CQ 22 µF TLE 4266G 4 AES01727 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4266 Drop Voltage VDr versus Output Current IQ V Dr 800 mV 700 600 500 Tj = 125 C Current Consumption Iq versus Input Voltage Vi 15 AED01979 Ι q mA 10 R L = 50 Ω 400 300 5 200 Tj = 25 C R L = 100 Ω 100 0 25 0 50 75 100 125 mA 175 0 10 20 30 40 V 50 ΙQ Vi Current Consumption Iq versus Output Current IQ 12 AED01980 Current Consumption Iq versus Output Current IQ 3.0 AED01981 Ι q mA 10 Ι q mA 2.5 8 2.0 Vi = 13.5 V 6 1.5 4 1.0 Vi = 13.5 V 2 0.5 0 0 50 100 mA 150 0 0 5 10 15 20 ΙQ 30 mA ΙQ Semiconductor Group 7 1998-11-01 TLE 4266 Output Voltage VQ versus Temperature Tj (5 V-version) 5.20 AED01982 Output Current IQ versus Input Voltage Vi 200 AED01983 VQ V 5.10 Ι Q mA Vi = 13.5 V 150 Tj = 25 C 5.00 4.90 100 Tj = 125 C 4.80 50 4.70 4.60 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 40 V 50 Vi Output Voltage VQ versus Input Voltage Vi (5 V-version) 6 AED01984 Output Voltage VQ versus Inhibit Voltage Ve (5 V-version) 6 AED02014 VQ V 5 R L = 50 Ω VQ V 5 V Ι = 13.5 V 4 4 V Ι = Ve 3 3 2 2 1 1 0 0 2 4 6 8 V 10 0 0 1 2 3 4 5V6 Vi Ve Semiconductor Group 8 1998-11-01 TLE 4266 Package Outlines P-SOT223-4-2 (Plastic Small Outline Transistor) 1.6 ±0.1 0.1 max A 6.5 ±0.2 3 ±0.1 B 7 ±0.3 15˚max 4 1 0.7 ±0.1 2 3 2.3 4.6 0.5 min 0.28 ±0.04 3.5 ±0.2 +0.2 acc. to DIN 6784 0.25 Weight approx. 0.15 g M A 0.25 M B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 9 Dimensions in mm 1998-11-01 GPS05560