Q67006-A9260

Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance ≤ ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use in automotive electronics P-TO220-3-1 Type TLE 4274 V10 TLE 4274 V85 TLE 4274 V50 TLE 4274 D V50 Ordering Code Q67000-A9258 Q67000-A9257 Q67000-A9256 Q67006-A9331 Package P-TO220-3-1 P-TO220-3-1 P-TO220-3-1 P-TO252-3-1 P-TO263-3-1 P-TO263-3-1 P-TO263-3-1 P-TO252-3-1 TLE 4274 G V10 Q67006-A9261 TLE 4274 G V50 Q67006-A9259 TLE 4274 G V85 Q67006-A9260 SMD = Surface Mounted Device Functional Description The TLE 4274 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85) and 10 V (V10). The maximum output current is 400 mA. The IC is short-circuit proof and incorporates temperature protection that disables the IC at over temperature. Dimensioning Information on External Components P-TO263-3-1 The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4274 Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: • Overload • Overtemperature • Reverse polarity Pin Configuration (top view) P-TO220-3-1 P-TO252-3-1 P-TO263-3-1 GND Ι Q AEP02512 Ι GND Q AEP02281 Ι GND Q AEP01957 Figure 1 Pin Definitions and Functions Pin No. 1 2 3 Symbol I GND Q Function Input; block to ground directly at the IC with a ceramic capacitor. Ground Output; block to ground with a ≥ 22 µF capacitor. 2 1998-11-01 Semiconductor Group TLE 4274 Temperature Sensor Saturation Control and Protection Circuit 3 Control Amplifier Q Ι 1 Buffer Bandgap Reference 2 GND AEB01959 Figure 2 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4274 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Voltage Regulator Input Voltage Current Output Voltage Current Ground Current Temperature Junction temperature Storage temperature max. Unit Test Condition VI II – 42 – 45 – V – – Internally limited VQ IQ IGND Tj Tstg – 1.0 – 40 – V – – Internally limited – 100 mA – – – 50 150 150 °C °C – – Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Operating Range Parameter Input voltage Junction temperature Thermal Resistance Junction ambient Junction ambient Junction case 1) Symbol Limit Values min. max. 40 40/40 150 5.5 9.0/10.5 – 40 Unit Remarks VI Tj Rthja Rthja Rthjc V °C V50 V85/V10 – – – – 65 70 4 K/W TO220 K/W TO2521), TO263 K/W – Soldered in, min. footprint Semiconductor Group 4 1998-11-01 TLE 4274 Characteristics VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Output voltage V50-Version Output voltage V85-Version Output voltage V10-Version Output current limitation1) Current consumption; Iq = II – IQ Current consumption; Iq = II – IQ Drop voltage1) Load regulation Line regulation Power supply ripple rejection Temperature output voltage drift 1) Symbol Limit Values min. typ. 5 8.5 10 600 100 max. 5.2 8.84 10.4 – 220 4.8 8.16 9.6 400 – Unit Measuring Conditions 5 mA < IQ < 400 mA 6 V < VI < 40 V 5 mA < IQ < 400 mA 9.5 V < VI < 40 V 5 mA < IQ < 400 mA 11 V < VI < 40 V – VQ VQ VQ IQ Iq V V V mA µA IQ = 1 mA Iq Iq Vdr ∆VQ ∆VQ PSRR dV Q ---------dT – – – – – – – 8 20 250 20 10 60 0.5 15 30 500 50 25 – – mA mA mV mV mV dB IQ = 250 mA IQ = 400 mA IQ = 250 mA Vdr = VI – VQ IQ = 5 mA to 400 mA ∆Vl = 12 V to 32 V IQ = 5 mA fr = 100 Hz; Vr = 0.5 VSS mV/K – Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Semiconductor Group 5 1998-11-01 TLE 4274 ΙΙ Input 100 µ F 1 3 ΙQ CQ 22 µF Output CΙ 100 nF TLE 4274 VΙ 2 VQ RL AES01960 Figure 3 Measuring Circuit Input 1 3 Output TLE 4274 CΙ 2 AES01961 CQ Figure 4 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4274 Typical Performance Characteristics (V50, V85 and V10): Drop Voltage Vdr versus Output Current IQ 600 AED01962 Output Current IQ versus Input Voltage VI 800 mA AED01963 V dr mV ΙQ T j = 125 C 600 400 400 T j = 25 C VQ = 0 V 300 200 100 T j = 25 C Vdr = V QNOM-0.1 V 200 0 0 0 100 200 300 mA 400 ΙQ 0 10 20 30 40 V 50 VΙ Current Consumption Iq versus Output Current IQ (high load) 60 mA AED02267 Current Consumption Iq versus Output Current IQ (low load) 0.6 mA AED02268 Ιq T j = 25 C V Ι = 13.5 V 40 Ιq T j = 25 C V Ι = 13.5 V 0.4 30 0.3 20 0.2 10 0.1 0 0 0 100 200 300 400 mA ΙQ 600 0 10 20 30 40 mA ΙQ 60 Semiconductor Group 7 1998-11-01 TLE 4274 Typical Performance Characteristics (V50): Output Voltage VQ versus Junction Temperature Tj 5.20 AED01966 Current Consumption Iq versus Input Voltage VI 30 mA AED02269 VQ V 5.10 Ιq V Ι = 13.5 V 5.00 20 4.90 T j = 25 C R L = 20 Ω 10 4.80 4.70 4.60 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 V VΙ 50 Output Voltage VQ versus Input Voltage VI 6 AED01968 Input Current II versus Input Voltage VI 3.5 mA Ι Ι 3.0 2.5 AED01977 VQ V 5 VQ 4 VΙ =VQ 3 2.0 1.5 T j = 25 C R L = 10 k Ω T j = 25 C R L = 20 Ω 2 1.0 0.5 1 0 -2 -50 0 0 2 4 6 8 V 10 VΙ -25 0 25 V 50 VΙ Semiconductor Group 8 1998-11-01 TLE 4274 Typical Performance Characteristics for V85: Output Voltage VQ versus Junction Temperature Tj 9.0 AED01970 Current Consumption Iq versus Input Voltage VI 30 mA AED02270 VQ V Ιq V Ι = 13.5 V 8.5 20 T j = 25 C R L = 20 Ω 8.0 10 7.5 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 V VΙ 50 Output Voltage VQ versus Input Voltage VI 12 AED01972 Input Current II versus Input Voltage VI 3.5 mA Ι Ι 3.0 2.5 2.0 AED01973 VQ V 10 VQ 8 VΙ =VQ 6 1.5 T j = 25 C R L = 8.5 k Ω T j = 25 C R L = 34 Ω 4 1.0 0.5 2 0 -2 -50 0 0 4 8 12 16 V 20 VΙ -25 0 25 V 50 VΙ Semiconductor Group 9 1998-11-01 TLE 4274 Typical Performance Characteristics for V10: Output Voltage VQ versus Junction Temperature Tj 10.5 AED01974 Current Consumption Iq versus Input Voltage VI 30 mA AED02270 VQ V Ιq V Ι = 13.5 V 10.0 20 T j = 25 C R L = 20 Ω 9.5 10 9.0 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 V VΙ 50 Output Voltage VQ versus Input Voltage VI 12 AED01976 Input Current II versus Input Voltage VI 3.5 mA Ι Ι 3.0 2.5 AED01977 VQ V 10 VQ 8 2.0 VΙ =VQ 6 1.5 T j = 25 C R L = 10 k Ω T j = 25 C R L = 34 Ω 4 1.0 0.5 2 0 -2 -50 0 0 4 8 12 16 V 20 VΙ -25 0 25 V 50 VΙ Semiconductor Group 10 1998-11-01 TLE 4274 Package Outlines P-TO220-3-1 (Plastic Transistor Outline) 10 ±0.2 9.8 ±0.15 8.5 1) 3.7 -0.15 A B 4.4 1.27±0.1 15.65 ±0.3 1) 17±0.3 2.8 ±0.2 13.4 0.05 C 4.55 ±0.2 13.5 ±0.5 0...0.15 3x 0.75 ±0.1 1.05 0.5 ±0.1 2.4 2.54 0.25 M ABC GPT05155 1) Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mm Semiconductor Group 11 1998-11-01 9.25 ±0.2 TLE 4274 P-TO252-3-1 (Plastic Transistor Single Outline) 6.5 +0.15 -0.10 A 1 ±0.1 5.4 ±0.1 0.8 ±0.15 B 2.3 +0.05 -0.10 0.9 +0.08 -0.04 9.9 ±0.5 6.22 -0.2 0.51 min 0.15 max per side 3x 0.75 ±0.1 2.28 0...0.15 0.5 +0.08 -0.04 1 ±0.1 4.57 0.25 M AB 0.1 GPT09051 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 12 Dimensions in mm 1998-11-01 TLE 4274 P-TO263-3-1 (Plastic Transistor Single Outline) 10 ±0.2 9.8 ±0.15 A 8.5 1) 4.4 1.27 ±0.1 B 0.1 2.4 9.25 ±0.2 1±0.3 0.05 (15) 8 1) 0...0.15 0.75 ±0.1 1.05 2.54 5.08 1) 4.7 ±0.5 2.7 ±0.3 0.5 ±0.1 8˚ max. 0.25 M AB 0.1 GPT09057 Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 13 Dimensions in mm 1998-11-01