Q67006-A9270

Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance ≤ ± 4% Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics Ordering Code Package Q67000-A9262 P-TO220-5-3 Q67000-A9263 P-TO220-5-3 Q67000-A9264 P-TO220-5-3 P-TO220-5-3 Type TLE 4276 V50 TLE 4276 V85 TLE 4276 V10 TLE 4276 G V50 Q67006-A9266 P-TO220-5-122 TLE 4276 G V85 Q67006-A9268 P-TO220-5-122 TLE 4276 G V10 Q67006-A9270 P-TO220-5-122 TLE 4276 S V50 Q67000-A9267 P-TO220-5-43 TLE 4276 S V85 Q67000-A9269 P-TO220-5-43 TLE 4276 S V10 Q67000-A9271 P-TO220-5-43 TLE 4276 V TLE 4276 SV TLE 4276 GV w TLE 4276 DV Q67000-A9265 P-TO220-5-3 Q67000-A9273 P-TO220-5-43 Q67006-A9272 P-TO220-5-122 P-TO220-5-122 Q67006-A9361 P-TO252-5-1 P-TO220-5-43 w TLE 4276 D V50 Q67006-A9358 P-TO252-5-1 SMD = Surface Mounted Device w New type P-TO252-5-1 (D-PAK) Semiconductor Group 1 1998-11-01 TLE 4276 Functional Description The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable voltage (V). The maximum output current is 400 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is shortcircuit-proof and incorporates temperature protection that disables it at over-temperature. Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: • Overload • Overtemperature • Reverse polarity Semiconductor Group 2 1998-11-01 TLE 4276 Pin Configuration (top view) P-TO220-5-3 P-TO220-5-43 P-TO220-5-122 P-TO252-5-1 GND 1 5 1 Ι Q INH N.C. (VA) 5 1 5 1 5 Ι GND INH N.C. Q AEP02560 AEP02043 Ι GND INH N.C. (VA) Q Ι GND INH N.C. (VA) Q AEP02041 AEP02042 Figure 1 Pin Definitions and Functions Pin No. 1 2 3 4 Symbol Function I INH GND N.C. VA Q Input; block to ground directly at the IC with a ceramic capacitor. Inhibit; low-active input Ground Not connected for V50, V85, V10 Voltage Adjust Input; only for adjustable output from external voltage divider. Output; block to ground with a ≥ 22 µF capacitor. 5 Semiconductor Group 3 1998-11-01 TLE 4276 Temperature Sensor Saturation Control and Protection Circuit 6 Control Amplifier Q Ι 1 Buffer Bandgap Reference *) **) 2 INH *) For fixed Voltage Regulator only **) For adjustable Voltage Regulator only 4 VA 3 GND AEB02044 Figure 2 Block Diagram Semiconductor Group 4 1998-11-01 TLE 4276 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Voltage Regulator Input Voltage Current Inhibit Voltage Voltage Adjust Input Voltage Output Voltage Current Ground Current Temperature Junction temperature Storage temperature max. Unit Test Condition VI II – 42 – 45 – V – – Internally limited VINH – 42 45 V – VVA – 0.3 10 V – VQ IQ – 1.0 – 40 – V – – Internally limited IGND – 100 mA – Tj Tstg – – 50 150 150 °C °C – – Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Semiconductor Group 5 1998-11-01 TLE 4276 Operating Range Parameter Input voltage Junction temperature Thermal Resistance Junction ambient Junction ambient Junction case 1) Symbol Limit Values min. max. 40 150 Unit Remarks VI Tj VQ + 0.5 – 40 V °C – – Rthja Rthja Rthjc – – – 65 70 4 K/W TO220 K/W TO2521), TO263 K/W – Soldered in, minimal footprint Characteristics VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. Output voltage VQ 4.8 typ. 5 Unit Measuring Condition max. 5.2 Measuring Circuit V 1 V50-Version 5 mA < IQ < 400 mA 6 V < VI < 40 V 1 V85-Version 5 mA < IQ < 400 mA 9.5 V < VI < 40 V 1 V10-Version 5 mA < IQ < 400 mA 11 V < VI < 40 V V-Version VV.A.= 2.5 V – 1 1 1 Output voltage VQ 8.16 8.5 8.84 V Output voltage VQ 9.6 10 10.4 V Output voltage ∆VQ tolerance Output current IQ limitation1) Current consumption; Iq = II – IQ Current consumption; Iq = II – IQ –4 400 – 600 0 4 – 10 % mA µA Iq VINH = 0 V; Tj ≤ 100 °C IQ = 1 mA Iq – 100 220 µA 1 Semiconductor Group 6 1998-11-01 TLE 4276 Characteristics (cont’d) VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Current consumption; Iq = II – IQ Drop voltage1) Load regulation Line regulation Symbol Limit Values min. typ. 5 15 – – – – – 250 5 10 60 0.5 – Unit Measuring Condition max. 10 25 500 35 25 – – mA mA mV mV mV dB – Measuring Circuit 1 1 1 1 1 1 mV/K Iq Iq VDR ∆VQ ∆VQ IQ = 250 mA IQ = 400 mA IQ = 250 mA VDR = VI – VQ IQ = 5 mA to 400 mA Power supply PSRR ripple rejection Temperature dVQ output voltage dT drift 1) ∆Vl = 12 V to 32V IQ = 5 mA fr = 100 Hz; Vr = 0.5 VSS – Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Inhibit Inhibit on voltage Inhibit off voltage Input current VINH VINH IINH – 0.5 5 2 1.7 10 3.5 – 20 V V µA VQ ≥ 4.9 V VQ ≤ 0.1 V VINH = 5 V 1 1 1 Semiconductor Group 7 1998-11-01 TLE 4276 Input ΙΙ 100 µ F 100 nF 1 5 ΙQ CQ 22 µF Output VΙ Ι INH 2 V INH TLE 4276 *) 4 3 R 1 *) RL Voltage Adjust R 2 *) VQ *) Optional for adjustable Voltage Regulator AES02045 Figure 3 Measuring Circuit Input 1 5 Output CΙ e.g. KL 15 2 TLE 4276 *) 4 3 CQ R 1 *) Voltage Adjust R 2 *) AES02046 *) Optional for adjustable Voltage Regulator Figure 4 Application Circuit Semiconductor Group 8 1998-11-01 TLE 4276 Typical Performance Characteristics (V50, V85 and V10): Drop Voltage VDR versus Output Current IQ 600 AED01962 Max. Output Current IQ versus Input Voltage VI 800 mA AED01963 V dr mV ΙQ T j = 125 C 400 600 T j = 25 C VQ = 0 V 400 300 200 100 T j = 25 C Vdr = V QNOM-0.1 V 200 0 0 0 100 200 300 mA 400 ΙQ 0 10 20 30 40 V 50 VΙ Current Consumption Iq versus Output Current IQ (high load) 60 mA AED01964 Current Consumption Iq versus Output Current IQ (low load) 0.6 mA AED01965 Ιq T j = 25 C V Ι = 13.5 V 40 Ιq T j = 25 C V Ι = 13.5 V 0.4 30 0.3 20 0.2 10 0.1 0 0 0 100 200 300 400 mA ΙQ 600 0 10 20 30 40 mA ΙQ 60 Semiconductor Group 9 1998-11-01 TLE 4276 Typical Performance Characteristics for V50: Output Voltage VQ versus Temperature Tj 5.20 AED01966 Current Consumption Iq versus Input Voltage VI 30 mA AED01967 VQ V 5.10 Ιq V Ι = 13.5 V 5.00 20 4.90 T j = 25 C R L = 20 Ω 10 4.80 4.70 4.60 -40 0 0 40 80 120 C 160 Tj 0 10 20 30 V VΙ 50 Low Voltage Behavior 6 AED01968 High Voltage Behavior 3.5 mA Ι Ι 3.0 2.5 AED01969 VQ V 5 VQ 4 VΙ =VQ 3 2.0 1.5 T j = 25 C R L = 3.3 k Ω T j = 25 C R L = 20 Ω 2 1.0 0.5 1 0 -2 -50 0 0 2 4 6 8 V 10 VΙ -25 0 25 V 50 VΙ Semiconductor Group 10 1998-11-01 TLE 4276 Typical Performance Characteristics for V85: Output Voltage VQ versus Temperature Tj 9.0 AED01970 Current Consumption Iq versus Input Voltage VI 30 mA AED01971 VQ V Ιq V Ι = 13.5 V 8.5 20 T j = 25 C R L = 20 Ω 8.0 10 7.5 -40 0 0 40 80 120 C 160 Tj 0 10 20 30 V VΙ 50 Low Voltage Behavior 12 AED01972 High Voltage Behavior 3.5 mA Ι Ι 3.0 2.5 2.0 1.5 AED01973 VQ V 10 VQ 8 VΙ =VQ 6 T j = 25 C R L = 8.5 k Ω T j = 25 C R L = 34 Ω 4 1.0 0.5 2 0 -2 -50 0 0 4 8 12 16 V 20 VΙ -25 0 25 V 50 VΙ Semiconductor Group 11 1998-11-01 TLE 4276 Typical Performance Characteristics for V10: Output Voltage VQ versus Temperature Tj 10.5 AED01974 Current Consumption Iq versus Input Voltage VI 30 mA AED01975 VQ V Ιq V Ι = 13.5 V 10.0 20 T j = 25 C R L = 20 Ω 9.5 10 9.0 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 V VΙ 50 Low Voltage Behavior 12 AED01976 High Voltage Behavior 3.5 mA Ι Ι 3.0 2.5 AED01977 VQ V 10 VQ 8 2.0 VΙ =VQ 6 1.5 T j = 25 C R L = 10 k Ω T j = 25 C R L = 34 Ω 4 1.0 0.5 2 0 -2 -50 0 0 4 8 12 16 V 20 VΙ -25 0 25 V 50 VΙ Semiconductor Group 12 1998-11-01 TLE 4276 Package Outlines P-TO220-5-3 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Semiconductor Group 13 Dimensions in mm 1998-11-01 TLE 4276 P-TO220-5-43 (Plastic Transistor Single Outline) Semiconductor Group 14 1998-11-01 TLE 4276 P-TO220-5-122 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 15 Dimensions in mm 1998-11-01 TLE 4276 P-TO252-5-1 (Plastic Transistor Single Outline) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 B A 1 ±0.1 0...0.15 0.9 +0.08 -0.04 1 ±0.1 5.4 ±0.1 9.9 ±0.5 6.22 -0.2 0.8 ±0.15 (4.17) 0.15 max per side 0.51 min 5x0.6 ±0.1 1.14 0.5 +0.08 -0.04 0.1 4.56 0.25 M AB GPT09161 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 16 Dimensions in mm 1998-11-01