Q67006-A9356

5-V Low Drop Voltage Regulator TLE 4262 Bipolar IC Features q q q q q q q q q Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Settable reset threshold Wide temperature range Suitable for use in automotive electronics Ordering Code Package Q67006-A9068 P-DSO-20-6 (SMD) P-DSO-14-4 (SMD) P-DSO-20-6 Type TLE 4262 G w TLE 4262 GM Q67006-A9356 w New type P-DSO-14-4 Functional Description TLE 4262 G is a 5-V low-drop voltage regulator in a P-DSO-20-6 SMD package. The maximum input voltage is 45 V. The maximum output current is more than 200 mA. The IC is short-circuit proof and incorporates temperature protection that disables the IC at overtemperature. The IC regulates an input voltage VI in the range of 6 V < VI < 45 V to VQrated = 5.0 V. A reset signal is generated for an output voltage of VQ < 4.5 V. This voltage threshold can be decreased to 3.5 V by external connection. The reset delay can be set externally with a capacitor. The IC can be switched off via the inhibit input, which causes the current consumption to drop from 720 µA to < 50 µA. Semiconductor Group 1 1998-11-01 TLE 4262 Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating circuit consisting of input inductivity and input capacitance can be damped. The output capacitor is necessary for the stability of the regulating circuit. Stability is guaranteed at values ≥ 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. For small tolerances of the reset delay, the spread of the capacitance of the dalay capacitor and its temperature coefficient should be noted. Pin Configuration (top view) TLE 4262 G TLE 4262 GM INH QRES GND GND GND DRES SRES 1 2 3 4 5 6 7 14 13 12 11 10 9 8 AEP02588 VΙ N.C. GND GND GND N.C. VQ Semiconductor Group 2 1998-11-01 TLE 4262 Pin Definitions and Functions Pin 1 2 4-7, 14-17 9 10 Symbol INH QRES GND DRES SRES Function Inhibit; TTL-compatible, low-active input Reset output; open-collector output internally connected to the output via a resistor of 30 kΩ. Ground Reset delay; connected to ground by a capacitor Reset threshold; for setting the switching threshold connect by a voltage divider from output to ground. If this input is connected to GND, reset is triggered at an output voltage of 4.5 V. 5-V output voltage; block to ground by a 22−µF capacitor. Input voltage; block to ground directly at the IC by a ceramic capacitor. Not connected 11 20 3, 8, 12, 13, 18, 19 VQ VI N.C. Semiconductor Group 3 1998-11-01 TLE 4262 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the externally scaled down output voltage at the reset threshold input drops below 1.35 V, the external reset delay capacitor is discharged by the reset generator. If the voltage on the capacitor reaches the lower threshold VST, a reset signal is issued on the reset output and not cancelled again until the upper threshold VdT is exceeded. If the reset threshold input is connected to GND, reset is triggered at an output voltage of 4.5 V. The IC can be switched at the TTL-compatible, low-active inhibit input. It also incorporates a number of internal circuits for protection against: q q q Overload Overtemperature Reverse polarity Block Diagram Semiconductor Group 4 1998-11-01 TLE 4262 Absolute Maximum Ratings Parameter Symbol Limit Values min. max. Unit Remarks Input Input voltage Input current VI II – 42 – 45 – V – – internally limited Reset Output Voltage Current VR IR – 0.3 – 42 – V – – internally limited Reset Input Reset threshold VRE – 0.3 6 V – Reset Delay Voltage Current Vd Id – 0.3 – 42 – V – – internally limited Output Voltage Current VQ IQ – 5.25 – VI – V – – internally limited Inhibit Voltage Ve – 42 45 V – Ground Current Semiconductor Group IGND – 0.5 5 – A – 1998-11-01 TLE 4262 Absolute Maximum Ratings (cont’d) Parameter Symbol Limit Values min. max. Unit Remarks Temperature Junction temperature Storage temperature Tj Tstg – – 50 150 150 °C °C – – Operating Range Input voltage Junction temperature Thermal resistance junction-ambient junction-case *) VI Tj Rth JA Rth JC 5.2 – 40 – – 45 150 70 25 V °C *) – K/W soldered K/W – Corresponds with characteristics of drop voltage, output current and power description (see diagrams). Semiconductor Group 6 1998-11-01 TLE 4262 Characteristics VI = 13.5 V; Tj = 25 °C; Ve > 3.5 V; (unless specified otherwise) Parameter Symbol Limit Values min. Normal Operation Output voltage typ. max. Unit Test Condition VQ 4.9 5.00 5.10 V 5 mA ≤ IQ ≤ 150 mA; 6 V ≤ VI ≤ 28 V; – 40 °C ≤ Tj ≤ 125 °C 6 V ≤ VI ≤ 32 V; IQ = 100 mA Tj > 100 °C – Output voltage VQ 4.95 5.00 5.05 V Output current limiting Current consumption; Iq = Ii – IQ IQ Iq Iq Iq Iq 200 – – – – – – – – 250 – 720 10 15 0.35 – 15 54 50 – 15 20 0.6 25 25 – mA µA µA mA mA V mV mV dB Ve < 0.8 V IQ = 0 mA IQ = 150 mA IQ = 150 mA; Vi = 4.5 V IQ = 150 mA *) IQ = 5 mA to 150 mA VI = 6 V to 28 V; IQ = 150 mA fr = 100 Hz; Vr = 0.5 Vpp Drop voltage Load regulation Supply-voltage regulation Ripple rejection VDr ∆VQ ∆VQ SVR Reset Generator Switching threshold Switching voltage Saturation voltage *) VRT VRE VR 4.2 1.28 – 4.5 1.35 0.10 4.8 1.42 0.40 V V V VRE = 0 V VQ > 3.5 V IR = 1 mA Drop voltage VI ≥ 4.5 V; drop voltage = VI – VQ (below regulating range) Note: The reset output is low within the range VQ = 1 V to VRT. Semiconductor Group 7 1998-11-01 TLE 4262 Characteristics (cont’d) VI = 13.5 V; Tj = 25 °C; Ve > 3.5 V; (unless specified otherwise) Parameter Symbol Limit Values min. Saturation voltage Charge current Delay switching threshold Switching threshold Delay time Delay time Inhibit Switch-ON voltage Switch-OFF voltage Input current typ. 50 10 1.7 0.35 17 2 max. 100 14 2.1 0.55 – – mV µA V V ms µs Unit Test Condition VC Id VdT VST tD tt – 7 1.5 0.2 – – VQ < VRT – – – Cd = 100 nF Cd = 100 nF Ve ON Ve OFF Ie 3.5 – 5 – – 10 – 0.8 15 V V µA IC turned on IC turned off Ve = 5 V Note: The reset output is low within the range VQ = 1 V to VRT. Semiconductor Group 8 1998-11-01 TLE 4262 Input 6 V...45 V 470 nF KL15 Reset to MC 20 1 11 9 Output 22 µ F 100 nF 100 k Ω TLE 4262G 2 4 10 56 k Ω AES01084 Application Circuit ΙΙ 1000 µF 20 470 nF TLE 4262G Ι 11 Q 22 µF 5.6 k Ω Ιe 1 VΙ + Vr VΙ 9 Ι 2R Ιd 4 10 VQ VR Ve Cd 100 nF Ι GND V cd V Dr = V Ι - V Q *) Vr SVR = 20 log ∆V Q *) Below Regulating Range AES01082 Test Circuit Semiconductor Group 9 1998-11-01 TLE 4262 VΙ