SFH620AA

5.3 kV TRIOS® Optocoupler AC Voltage Input FEATURES • High Current Transfer Ratios at 5 mA: 50–600% at 1 mA: 45% typical (>13) • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VACRMS • High Collector-Emitter Voltage, VCEO=70 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100"(2.54 mm) Spacing • High Common-Mode Interference Immunity (Unconnected Base) • Underwriters Lab File #52744 • VDE 0884 Available with Option 1 • SMD Option, See SFH6206 Data Sheet DESCRIPTION The SFH620AA/AGB features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Maximum Ratings Emitter Reverse Voltage ..............................................................................± 60 mA Surge Forward Current (tP≤10 µs)..................................................... ± 2.5 A Total Power Dissipation .................................................................. 100 mW Detector Collector-Emitter Voltage..................................................................... 70 V Emitter-Collector Voltage........................................................................ 7 V Collector Current ............................................................................... 50 mA Collector Current (tP≤1 ms) ............................................................. 100 mA Total Power Dissipation .................................................................. 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ................................................................... 5300 VACRMS Creepage ......................................................................................... ≥7 mm Clearance......................................................................................... ≥7 mm Insulation Thickness between Emitter and Detector....................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 .................................................... 175 Isolation Resistance VIO=500 V, TA=25°C ................................................................... ≥1012 Ω VIO=500 V, TA=100°C ................................................................. ≥1011 Ω Storage Temperature Range ................................................ –55 to +150°C Ambient Temperature Range ............................................... –55 to +100°C Junction Temperature........................................................................ 100°C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane ≥1.5 mm) ............................................. 260°C Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) SFH620AA/AGB Anode/ Cathode 1 Cathode/ Anode 2 4 3 Collector Emitter 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4° typ. .018 (.46) .022 (.56) 10 ° .020 (.508 ) .035 (.89) .050 (1.27) 1.00 (2.54) 3°–9° .008 (.20) .012 (.30) .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 1 Characteristics (TA=25°C) Description Emitter Forward Voltage Capacitance Thermal Resistance Detector Capacitance Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance VCESAT CC 0.25 (≤0.4) 0.2 V pF IF=10 mA, IC=2.5 mA CCE RthJA 6.8 500 pF K/W VCE=5 V, f=1 MHz VF C0 RthJA 1.25 (≤1.65) 50 750 V pF K/W IF=± 60 mA VR=0 V, f=1 MHz Symbol Unit Condition Note: 1. Still air, coupler soldered to PCB or base. Current Transfer Ratio (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current Description IC/ IF (IF=± 5 mA) Collector-Emitter Leakage Current, ICEO VCE=10 V AA 50–600 10 (≤100) AGB 100–600 10 (≤100) Unit % nA Switching Times (Typical Values) Linear Operation (saturated) IF=5 mA RL=1.9 Ω IC VCC=5 V 47 Ω Turn-on Time Turn-off Time tON tOFF 2.0 25 µs µs 2 SFH620AA/AGB Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=5 V Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25°C, f=1 MHz 20 pF 15 Figure 6. Permissible power dissipation vs. ambient temp. C 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25°C Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, TA=25°C Figure 7. Permissible diode forward current vs. ambient temp. Figure 3. Diode forward voltage (typ.) vs. forward current 3 SFH620AA/AGB