SMBT2907A

SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A (NPN) 3 2 1 VPS05161 Type SMBT 2907A Marking Ordering Code s2F Q68000-A6474 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 77 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 60 60 5 600 330 150 -65 ... +150 mA mW °C Unit V VCEO VCBO VEBO IC Ptot Tj Tstg RthJA RthJS ≤290 ≤220 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group 1 Jan-22-1999 SMBT 2907A Electrical Characteristics n at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. max. 10 10 10 nA µA nA 75 100 100 100 50 300 V 0.4 1.6 1.3 2.6 V Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO IEBO hFE 60 60 5 - I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 50 V, I E = 0 Collector cutoff current VCB = 50 V, I E = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, I C = 0 DC current gain 1) I C = 100 µA, V CE = 10 V I C = 1 mA, V CE = 10 V I C = 10 mA, VCE = 10 V I C = 150 mA, V CE = 10 V I C = 500 mA, V CE = 10 V Collector-emitter saturation voltage1) VCEsat I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) VBEsat - I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA 1) Pulse test: t ≤ 300µs, D = 2% Semiconductor Group 2 Jan-22-1999 SMBT 2907A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency Symbol min. Values typ. max. 8 30 10 ns MHz pF Unit fT Ccb Ceb td 200 - I C = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Rise time tr - - 40 VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Storage time tstg tf - - 80 30 VCC = 30 V, IC = 150 mA, I B1=IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, I B1=IB2 = 15mA Semiconductor Group 3 Jan-22-1999 SMBT 2907A Test circuits Delay and rise time Storage and fall time Oscillograph: R > 100Ω, C < 12pF, t r < 5ns Semiconductor Group 4 Jan-22-1999 SMBT 2907A Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Collector-base capacitance CCB = f (VCB) f = 1MHz Permissible pulse load Transition frequency fT = f (IC) Ptotmax / P totDC = f (tp) VCE = 5V Semiconductor Group 5 Jan-22-1999 SMBT 2907A Saturation voltage I C = f (VBEsat, V CEsat) Delay time t d = f (IC) Rise time tr = f (IC) h FE = 10 Storage time t stg = f(I C) Fall time t f = f (IC) Semiconductor Group 6 Jan-22-1999 SMBT 2907A DC current gain h FE = f (I C) VCE = 5V 10 3 SMBT 2907/A EHP00754 h FE 5 150 ˚C 25 ˚C 10 2 -50 ˚C 5 10 1 -1 10 10 0 10 1 10 2 mA 10 3 ΙC Semiconductor Group 7 Jan-22-1999