SMBTA06M

SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 06M Marking Ordering Code Pin Configuration s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W °C mA A mA Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤110 ≤55 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-08-1998 1998-11-01 SMBTA 06M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. max. 100 20 100 V nA µA nA 100 100 0.25 1.2 V V V Unit V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE 80 80 4 - I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0 Collector cutoff current VCB = 80 V, I E = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, I B = 0 DC current gain 1) I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) VCEsat VBE(ON) - I C = 100 mA, IB = 10 mA Base-emitter voltage 1) I C = 100 mA, V CE = 1 V AC Characteristics Transition frequency fT Ccb - 100 5 - MHz pF IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Jun-08-1998 1998-11-01 SMBTA 06M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 1200 mW TS P tot 800 TA 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 RthJS 10 1 Ptotmax / PtotDC K/W - 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Jun-08-1998 1998-11-01 SMBTA 06M DC current gain h FE = f(I C) Collector-emitter saturation voltage VCE = 1V EHP00821 IC = f (VCEsat), h FE = 10 10 3 10 3 EHP00819 h FE 100 C 10 2 25 C Ι C mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 3 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8 ΙC V CEsat Collector cutoff current I CBO = f(TA) Collector current I C = f (VBE) VCB = V CEmax EHP00820 VCE = 1V EHP00815 10 4 nA 10 3 mA Ι CBO 10 3 5 10 2 5 10 1 5 10 5 0 max ΙC 10 2 5 100 C 25 C -50 C 10 1 typ 5 10 0 5 10 -1 0 50 100 C 150 10 -1 0 0.5 1.0 V 1.5 TA V BE Semiconductor Group Semiconductor Group 44 Jun-08-1998 1998-11-01