SP0610

SP 0610T SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -1.0..-2.0V Pin 1 G Pin 2 S Pin 3 D Type SP 0610T Type SP 0610T VDS -60 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Marking sSF Ordering Code Q67000-S088 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -60 -60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.13 TA = 36 °C DC drain current, pulsed IDpuls -0.52 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 SP 0610T Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -1.5 -0.1 -2 -1 7 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -1 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -10 nA Ω 10 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.5 A Semiconductor Group 2 Sep-13-1996 SP 0610T Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.08 0.13 30 17 8 - S pF 40 25 12 ns 7 10 VDS≥ 2 * ID * RDS(on)max, ID = -0.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Rise time tr 12 18 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Turn-off delay time td(off) 10 13 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Fall time tf 20 27 VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Semiconductor Group 3 Sep-13-1996 SP 0610T Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.85 -0.13 -0.52 V -1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = -0.18 A, Tj = 25 °C Semiconductor Group 4 Sep-13-1996 SP 0610T Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.14 A -0.12 0.40 W Ptot 0.32 0.28 0.24 ID -0.11 -0.10 -0.09 -0.08 0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160 -0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -71 V -68 V(BR)DSS -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 Sep-13-1996 SP 0610T Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.30 A -0.26 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 32 Ptot = 0W lkj i h VGS [V] a b -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 Ω RDS (on) 24 ab c d e f g ID -0.24 -0.22 -0.20 -0.18 -0.16 -0.14 -0.12 -0.10 -0.08 -0.06 c e g c d e 20 ff g h i j k 16 12 h d l -10.0 8 i j l k -0.04 -0.02 0.00 0.0 -1.0 -2.0 -3.0 -4.0 b a 4 VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0 0 V -6.0 0.00 -0.04 -0.08 -0.12 -0.16 A -0.24 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, -0.65 A -0.55 0.16 S ID -0.50 -0.45 -0.40 -0.35 gfs 0.12 0.10 0.08 -0.30 -0.25 -0.20 -0.15 -0.10 -0.05 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.00 0.00 -0.10 -0.20 -0.30 -0.40 A ID -0.55 0.04 0.06 0.02 VGS Semiconductor Group 6 Sep-13-1996 SP 0610T Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.5 A, VGS = -10 V 24 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω 20 RDS (on) 18 16 14 12 10 VGS(th) -3.6 -3.2 -2.8 98% -2.4 98% -2.0 typ 8 6 4 2 0 -60 -20 20 60 100 °C 160 -1.6 -1.2 -0.8 -0.4 0.0 -60 -20 20 typ 2% 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs -10 0 pF C 10 2 A IF -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 Sep-13-1996 SP 0610T Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 Sep-13-1996