SP0610L

SIPMOS® Small-Signal Transistor q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values − 60 − 60 ± 20 − 0.18 − 0.72 0.63 − 55 … + 150 ≤ 200 – E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 ˚C TA = 25 ˚C Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TA = 25 ˚C Pulsed drain current, Max. power dissipation, A W ˚C K/W Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 – – – SP 0610L Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = − 60 V, VGS = 0 Tj = 25 ˚C Gate-source leakage current VGS = − 20 V, VDS = 0 Drain-source on-resistance VGS = − 10 V, ID = − 0.5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = − 0.5 A Input capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = − 30 V, VGS = −10 V, RGS = 50 Ω, ID = − 0.27 A Turn-off time toff, (toff = td(off) + tf) VDD = − 30 V, VGS = −10 V, RGS = 50 Ω, ID = − 0.27 A Values typ. max. Unit V(BR)DSS VGS(th) IDSS V − 60 − 1.0 – − 1.5 – − 2.0 µA – − 0.1 −1 7 −1 nA – − 10 Ω – 10 IGSS RDS(on) gfs 0.08 0.13 30 17 8 7 12 10 20 – S pF – 40 25 12 10 18 13 27 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – SP 0610L Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous reverse drain current TA = 25 ˚C Pulsed reverse drain current TA = 25 ˚C Diode forward on-voltage Values typ. max. Unit IS – – – − 0.85 A − 0.18 − 0.72 V – − 1.2 ISM – IF = − 0.18 A, VGS = 0 VSD Package Outline TO-92 Dimensions in mm SP 0610L Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS SP 0610L Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.5 A, VGS = 10 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz SP 0610L Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 10 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C)