SPD14N05

SPD14N05 SPU14N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 13.5 A 13.5 A RDS(on) 0.1 Ω 0.1 Ω Package Ordering Code SPD14N05 SPU14N05 P-TO252 P-TO251 Q67040 - S4123 - A2 Q67040 - S4115 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 13.5 9.6 Pulsed drain current TC = 25 °C IDpuls 54 EAS Avalanche energy, single pulse ID = 13.5 A, VDD = 25 V, RGS = 25 Ω L = 571 µH, Tj = 25 °C mJ 52 IAR EAR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 13.5 A, V DS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 13.5 3.5 A mJ kV/µs dv /dt 6 VGS Ptot Gate source voltage Power dissipation TC = 25 °C ± 20 35 V W Semiconductor Group 1 29/Jan/1998 SPD14N05 SPU14N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 4.3 ≤ 50 ≤ 100 55 / 175 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 20 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 9.6 A Ω 0.076 0.1 Semiconductor Group 2 29/Jan/1998 SPD14N05 SPU14N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 9.6 A gfs S 4 pF 270 340 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 95 120 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 65 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 Ω tr 9 15 Rise time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 Ω td(off) 22 35 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 Ω tf 18 30 Fall time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 Ω Qg(th) 17 25 nC Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V Qg(7) 0.33 0.5 Gate charge at 7.0 V V DD = 40 V, ID = 13.5 A, V GS =0 to 7 V Qg(total) 7.1 11 Gate charge total V DD = 40 V, ID = 13.5 A, V GS =0 to 10 V V (plateau) 9.5 14 V Gate plateau voltage V DD = 40 V, ID = 13.5 A - 5.9 - Semiconductor Group 3 29/Jan/1998 SPD14N05 SPU14N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 13.5 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 54 V Inverse diode forward voltage V GS = 0 V, IF = 27 A trr 1.17 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 50 75 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.1 0.15 Semiconductor Group 4 29/Jan/1998 SPD14N05 SPU14N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 14 A 36 W Ptot 28 24 20 16 12 8 4 0 0 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 3.3µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W 10 µs DS (o n) ID 10 1 = V DS A /I D ZthJC 10 0 R 100 µs 10 -1 D = 0.50 0.20 10 0 DC 1 ms 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 5 29/Jan/1998 SPD14N05 SPU14N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 30 A 26 ID 24 22 20 18 16 14 12 10 8 6 4 c b e g i Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.32 Ptot = 35W l k j Ω VGS [V] a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d e f g h RDS (on) 0.24 hd e f g 0.20 0.16 fh i j 0.12 i j k 10.0 d l 20.0 0.08 k 0.04 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 2 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 35 A I D 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/Jan/1998 SPD14N05 SPU14N05 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 9.6 A, VGS = 10 V 0.32 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =20µA 5.0 Ω RDS (on) 0.24 VGS(th) V 4.4 4.0 3.6 0.20 3.2 2.8 98% 2.4 2.0 1.6 max 0.16 0.12 typ 0.08 1.2 0.04 0.00 -60 0.8 0.4 -20 20 60 100 °C 180 0.0 -60 -20 20 60 100 140 V Tj typ min Tj 200 Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 A C pF Ciss IF 10 1 10 2 Coss Crss 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/Jan/1998 SPD14N05 SPU14N05 Avalanche energy EAS = f (Tj) parameter:ID=13.5 A,VDD =25 V RGS =25 Ω , L = 571 µH 60 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 V mJ EAS VGS 12 40 10 0,2 VDS max 0,8 VDS max 30 8 6 20 4 10 2 0 40 60 80 100 120 140 °C Tj 0 20 180 0 1 2 3 4 5 6 7 nC 9 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 29/Jan/1998