SPU23N05

SPD23N05 SPU23N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 22 A 22 A RDS(on) 0.06 Ω 0.06 Ω Package Ordering Code SPD23N05 SPU23N05 P-TO252 P-TO251 Q67040 - S4138 - A2 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 22 16 Pulsed drain current TC = 25 °C IDpuls 88 EAS Avalanche energy, single pulse ID = 22 A, V DD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C mJ 90 IAR EAR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 22 5.5 A mJ kV/µs dv /dt 6 VGS Ptot Gate source voltage Power dissipation TC = 25 °C ± 20 55 V W Semiconductor Group 1 29/Jan/1998 SPD23N05 SPU23N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 2.7 ≤ 50 ≤ 100 55 / 175 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 40 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 16 A Ω 0.04 0.06 Semiconductor Group 2 29/Jan/1998 SPD23N05 SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 16 A gfs S 7 10 pF 490 615 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 170 215 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 95 120 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 22 A RG = 20 Ω tr 15 25 Rise time V DD = 30 V, VGS = 10 V, ID = 22 A RG = 20 Ω td(off) 25 40 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 22 A RG = 20 Ω tf 30 45 Fall time V DD = 30 V, VGS = 10 V, ID = 22 A RG = 20 Ω Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(7) 0.5 0.75 Gate charge at 7.0 V V DD = 40 V, ID = 22 A, VGS =0 to 7 V Qg(total) 13 20 Gate charge total V DD = 40 V, ID = 22 A, VGS =0 to 10 V V (plateau) 17 26 V Gate plateau voltage V DD = 40 V, ID = 22 A - 5.9 - Semiconductor Group 3 29/Jan/1998 SPD23N05 SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 22 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 88 V Inverse diode forward voltage V GS = 0 V, IF = 44 A trr 1.2 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 55 85 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.12 0.18 Semiconductor Group 4 29/Jan/1998 SPD23N05 SPU23N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 24 A 20 ID 18 16 14 12 10 8 6 4 2 0 60 W 50 Ptot 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 2 /I D DS ZthJC t = 26.0µs p 10 0 10 -1 DS (o n) = V 100 µs R D = 0.50 10 -2 0.20 0.10 0.05 10 1 1 ms 10 -3 0.02 0.01 single pulse 10 ms 10 0 0 10 10 1 DC V 10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 5 29/Jan/1998 SPD23N05 SPU23N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 50 A ID 40 i Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.19 Ptot = 55W l k j VGS [V] a 4.0 b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω 0.16 RDS (on) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 b a b c d e f g 35 30 25 20 15 10 5 c e g hd e f g h fi j k l h i j VGS [V] = a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 i j h 9.0 10.0 20.0 d 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 5 10 15 20 25 30 35 A 45 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 I D 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/Jan/1998 SPD23N05 SPU23N05 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 16 A, VGS = 10 V 0.19 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =40µA 5.0 V 4.4 VGS(th) Ω 0.16 RDS (on) 0.14 0.12 0.10 98% 0.08 0.06 0.04 0.02 0.00 -60 typ 4.0 3.6 3.2 2.8 2.4 2.0 1.6 typ max 1.2 0.8 0.4 -20 20 60 100 °C 180 0.0 -60 -20 20 60 100 140 V Tj min Tj 200 Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 pF C A IF 10 3 Ciss 10 1 Coss 10 2 Crss 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/Jan/1998 SPD23N05 SPU23N05 Avalanche energy EAS = f (Tj) parameter:ID=22A,VDD =25 V RGS =25 Ω , L = 372µH 100 mJ EAS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 22 A 16 V VGS 80 70 12 10 60 50 40 30 4 20 2 10 0 20 40 60 80 100 120 140 °C Tj 0,2 VDS max 8 0,8 VDS max 6 0 180 0 4 8 12 16 nC 24 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 29/Jan/1998