TLE4935-2L

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances P-SSO-3-2 Type TLE 4905 L TLE 4935 L TLE 4935-2 L TLE 4945 L TLE 4945-2L Ordering Code Q67006-A9120 Q67006-A9112 Q67006-A9143 Q67006-A9163 on request Package P-SSO-3-2 P-SSO-3-2 P-SSO-3-2 P-SSO-3-2 P-SSO-3-2 TLE 4905/35/35-2/45 L (Unipolar/Bipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group 1 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Pin Configuration (view on branded side of component) Center of sensitive area 2.08 ±0.15 1.35 ±0.15 1 2 3 VS GND Q AEP01364 Figure 1 Pin Definitions and Functions Pin No. 1 2 3 Symbol Function Supply voltage Ground Output VS GND Q Semiconductor Group 2 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator VS 1 HallGenerator 3 Q VS VRef Amplifier SchmittTrigger Output Stage AEB01243 2 GND Figure 2 Block Diagram Semiconductor Group 3 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Functional Description Unipolar Type TLE 4905 (figure 3 and 4) When a positive magnetic field is applied in the indicated direction (figure 3) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the current is reduced, the output of the IC turns off (Release Point; figure 4). + Branded Side Ι S N VQ + VS - AES01231 Figure 3 Sensor/Magnetic-Field Configuration B BOP BRP 0 Induction t VQ VQH Output Voltage VQL t AED01420 Figure 4 Switching Characteristics Unipolar Type Semiconductor Group 4 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Functional Description Bipolar Type TLE 4935/35-2/45 (figure 5 and 6) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When a reverse magnetic field is generated, the output of the IC turns off (Release Point; figure 6). + Branded Side Ι S N VQ + VS - AES01231 Figure 5 Sensor/Magnetic-Field Configuration B BOP 0 t BRP Induction VQ VQH Output Voltage VQL t AED01421 Figure 6 Switching Characteristics Bipolar Type Semiconductor Group 5 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Absolute Maximum Ratings Tj = – 40 to 150 ˚C Parameter Supply voltage Supply voltage Output voltage Output current Output reverse current Junction temperature Junction temperature Junction temperature Storage temperature Thermal resistance Symbol Limit Values Unit Remarks min. max. 32 40 32 100 100 150 170 210 150 190 V V V mA mA ˚C ˚C ˚C ˚C – – 40 – – – – – 40 – – – 50 – VS VS VQ IQ – IQ Tj Tj Tj Tstg Rth JA t < 400 ms; ν = 0.1 – – – – 1000 h 40 h – K/W – Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Supply voltage Junction temperature Junction temperature Symbol Limit Values Unit Remarks min. max. 24 150 170 V ˚C ˚C – – thresholds may exceed the limits 3.8 – 40 – 40 VS Tj Tj Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L AC/DC Characteristics 3.8 V ≤ VS ≤ 24 V; – 40 ˚C ≤ Tj ≤ 150 ˚C Parameter Supply current Symbol – – – – – Limit Values min. typ. 3 4 0.25 – – max. 7 8 0.5 10 1 mA mA V µA µs B < BRP B > BOP Unit Test Condition Test Circuit 1 1 1 1 1 ISHigh ISLow Output saturation VQSat voltage Output leakage current Rise/fall time IQ = 40 mA VQ = 24 V RL = 1.2 kΩ CL ≤ 33 pF IQL tr / tf Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Semiconductor Group 7 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Magnetic Characteristics 3.8 V ≤ VS ≤ 24 V Parameter Symbol TLE 4905 unipolar TLE 4935 bipolar latch Limit Values TLE 4935-2 bipolar latch TLE 4945 bipolar latch TLE 4945-2 bipolar latch Unit min. max. min. max. min. max. min. max. min. max. Junction Temperature Tj = – 40 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP ∆BHY 7.5 5.5 2 19 17 6.5 10 – 20 20 20 – 10 40 15 – 27 30 27 – 15 54 –6 10 –3 –6 1 6 3 5 mT mT mT – 10 6 2 10 Junction Temperature Tj = 25 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP ∆BHY 7 5 2 18 16 6 10 –18 20 18 –10 36 14 – 26 28 26 – 14 52 –6 10 –3 –6 1 6 3 5 mT mT mT – 10 6 2 10 Junction Temperature Tj = 85 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP ∆BHY 6.5 4.5 2 17.5 15 5.5 9 – 18 18 18 –9 36 13 – 26 26 26 – 13 52 –6 10 –3 –6 1 6 3 5 mT mT mT – 10 6 2 10 Semiconductor Group 8 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Magnetic Characteristics (cont’d) 3.8 V ≤ VS ≤ 24 V Parameter Symbol TLE 4905 unipolar TLE 4935 bipolar latch Limit Values TLE 4935-2 bipolar latch TLE 4945 bipolar latch TLE 4945-2 bipolar latch Unit min. max. min. max. min. max. min. max. min. max. Junction Temperature Tj = 150 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP BRP ∆BHY 6 4 2 17 14 5 7 – 18 14 18 –7 36 12 – 25 24 25 – 12 50 –6 10 –3 –6 1 6 3 5 mT mT mT – 10 6 2 10 Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Semiconductor Group 9 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L VS ΙS 1 + 4.7 nF 2 VS RL CL GND TLE 4905/35/35-2/45-2 3 ΙQ Q AES01244 Unipolar Type TLE 4905 VQ VQH VQH Bipolar Type TLE 4935 VQ VQL 0 VQL B RP B HY B OP B B RP 0 B HY B OP B AED01422 VQ VQH 0.9 VQH 0.1VQH t tr tf AED01246 Figure 7 Test Circuit 1 Semiconductor Group 10 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Mainframe Line 1 4.7 nF 1.2 k Ω 4.7 nF 2 Sensor VS VS GND TLE 4905/35/35-2/45-2 Signal 3 Q AES01247 Figure 8 Application Circuit Semiconductor Group 11 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Quiescent Current versus Supply Voltage ΙS 8 mA 6 AED01248 Quiescent Current versus Junction Temperature ΙS 8 mA AED01249 VQ = High VQ = High 6 4 T j = -40 ˚C T j = 150 ˚C 4 VS = 24 V VS = 3.8 V 2 2 0 0 5 10 15 V 25 0 -50 0 50 100 C Tj 200 VS Quiescent Current Difference versus Temperature 1.0 AED01459 Saturation Voltage versus Output Current 1.2 AED01461 ∆Ι S mA ∆ Ι S = Ι SLow - Ι SHigh 0.75 VQ V 1.0 __ 3.8 V < VS < 24 V Ι Q = 40 mA 0.8 0.5 0.6 T j = 150 ˚C 0.4 0.25 0.2 T j = -40 ˚C 0 -40 0 50 100 150 ˚C 200 0 0 20 40 60 mA 100 Tj ΙQ Semiconductor Group 12 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L TLE 4905 Operate-and Release-Point versus Junction Temperature 25 AED01424 TLE 4905 Hysteresis versus Junction Temperature 8 AED01426 B mT 20 __ 3.8 V < VS < 24 V B mT 6 __ 3.8 V < VS < 24 V B OPmax 15 B HYmax B RPmax 4 B OPtyp 10 B RPtyp B OPmin B RPmin 2 B HYtyp 5 B HYmin 0 -40 0 50 100 ˚C Tj 200 0 -40 0 50 100 ˚C Tj 200 TLE 4935 Operate-and Release-Point versus Junction Temperature 30 AED01423 TLE 4935-2 Operate-and Release-Point versus Junction Temperature 30 AED01640 B mT 20 __ 3.8 V < VS < 24 V B mT 20 __ 3.8 V < VS < 24 V B OPmax B OPtyp B OPmin B OPmax B OPtyp B OPmin 0 -10 10 10 0 B RPmax -10 B RPmax -20 B RPtyp B RPmin -20 -40 0 50 100 ˚C Tj B RPtyp B RPmin 200 -30 -40 0 50 100 ˚C Tj 200 Semiconductor Group 13 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L TLE 4945 Operate-and Release-Point versus Junction Temperature 30 AED01425 TLE 4945-2 Operate-and Release-Point versus Junction Temperature 18 AED02353 B mT 20 __ 3.8 V < VS < 24 V B mT 12 __ 3.8 V < VS < 24 V 10 B OPmax B RPmax 6 B OPmax B RPmax B OPtyp B RPtyp B OPmin 0 B OPtyp B RPtyp B OPmin 0 -10 B RPmin -6 B RPmin -20 -12 -30 -40 0 50 100 ˚C Tj 200 -18 -40 0 50 100 ˚C Tj 200 Semiconductor Group 14 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Package Outline P-SSO-3-2 (Plastic Single Small Outline Package) Exterior Packaging I.e. tubes, trays, boxes are shown in our Data Book “Package Information”. Semiconductor Group 15 Dimensions in mm 1997-09-01 GPO05358