TLE5204G

3-A DC Motor Driver TLE 5204 Overview Features • • • • • • • Output current ± 3 A I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is required, the device TLE 5203 will fit SPT IC 1) P-TO220-7-1 P-TO220-7-8 Type TLE 5204 TLE 5204 G Description Ordering Code Q67000-A9177 Q67006-A9234 Package P-TO220-7-1 P-TO220-7-8 TLE 5204 is an integrated power bridge with DMOS output stages for driving DC motors. This motor bridge is optimized for driving DC motors in reversible operation. The internal protective circuitry in particular ensures that no crossover currents can occur. Because the free-wheeling diodes are integrated, the external circuitry that is necessary is reduced to the capacitors on the supply voltage. The control inputs have TTL/CMOS-compatible levels. 1) SIEMENS Power Technology Semiconductor Group 1 1998-02-01 TLE 5204 TLE 5204 TLE 5204 G 1 2 345 6 7 EF Q1 Ι1 GND Ι2 VS Q2 AEP01224 Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. 1 2 3 4 5 6 7 Symbol Q1 EF I1 GND I2 Function Output of channel 1; Short-circuit proof, free-wheeling diodes integrated for inductive loads Error flag; TTL/CMOS-compatible output for error detection (open drain) Control input 1; TTL/CMOS-compatible Ground; connected internally to cooling fin Control input 2; TTL/CMOS-compatible Supply voltage; wire with capacitor matching load Output of channel 2; Short-circuit proof, free-wheeling diodes integrated for inductive loads VS Q2 Semiconductor Group 2 1998-02-01 TLE 5204 Circuit Description Input Circuit The control inputs consist of TTL/CMOS-compatible Schmitt triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. Output Stages The output stages form a switched H-bridge. Protective circuits make the outputs shortcircuit proof to ground and to the supply voltage throughout the operating range. Positive and negative voltage spikes, which occur when switching inductive loads, are clamped by integrated power diodes. Functional Truth Table E1 L L H H E2 L H L H Q1 L L H H Q2 L H L H Comments Motor brake; both low side transistors turned-ON Motor turns clockwise Motor turns counterclockwise Motor brake; both high side transistors turned-ON Notes for Output Stage Symbol L H Value Low side transistor is turned-ON High side transistor is turned-OFF High side transistor is turned-ON Low side transistor is turned-OFF Semiconductor Group 3 1998-02-01 TLE 5204 Monitoring Functions An internal circuit ensures that all output transistors are turned-OFF if the supply voltage is below the operating range. A monitoring circuit for each output transistor detects whether the particular transistor is active and in this case prevents the corresponding source transistor (sink transistor) from conducting in sink operation (source operation). Therefore no crossover currents can occur. Pulse-width operation is possible up to a maximum switching frequency of 1 kHz for any load. Depending on the load current higher frequencies are possible. Protective Function Various errors like short-circuit to + VS, ground or across the load are detected. All faults result in turn-OFF of the output stages after a delay of 40 µs and setting of the error flag EF to ground. Changing the inputs resets the error flag. Output Shorted to Ground Detection If a high side transistor is switched on and its output is shorted to ground, the output current is limited to typ 8 A. After a delay of 40 µs all outputs will be switched off and the error flag EF is set to ground. Output Shorted to + VS and Overload Detection An internal circuit detects if the current through the low side transistor is higher than 4 A typ. In this case all outputs are turned-OFF after 40 µs and the error flag is set to ground. At a junction temperature higher than 160 °C the thermal shutdown turns-OFF, all four output stages commonly and the error flag is set without a delay. Diagnosis Input E1 L L H H E2 L H L H Q1 L L H H Output Q2 L H L H Shorted to GND – Q2 Q1 Q1, Q2 Diagnosis Shorted to VS Q1, Q2 Q1 Q2 – Overload – X X – L L L L EF Semiconductor Group 4 1998-02-01 TLE 5204 Error Flag 2 Error Flag Protection Circuit 1 VS 6 Control Input 1 3 1 Output 1 Control Input 2 5 7 Output 2 Protection Circuit 1 4 GND AEB01225 Figure 2 Block Diagram 5 1998-02-01 Semiconductor Group TLE 5204 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Voltage Supply voltage Supply voltage Logic input voltage Diagnostics output voltage Current Free-wheeling current Output current 1) Junction temperature Storage temperature Thermal Resistance Junction-case Junction-ambient Operating Range Supply voltage Logic input voltage Switching frequency 2) Junction temperature 1) Unit Remarks max. VS VS VI1 , 2 VEF – 0.3 –1 – 0.3 – 0.3 40 – 7 7 V V V V – t < 500 ms; IS < 5 A VS = 0 – 40 V – IF IQ Tj Tstg –4 –4 – 40 – 50 4 4 150 150 A A °C °C Tj ≤ 150 °C – – – Rth jC Rth jA – – 4 65 K/W K/W – – VS VI1 , 2 f Tj 6 – 0.3 – – 40 24 7 1 150 V V kHz °C – – – – During overload condition currents higher than 4 A can dynamically occur, before the device shuts off, without any damaging the device. 2) Depending on load higher frequencies are possible. Semiconductor Group 6 1998-02-01 TLE 5204 Electrical Characteristics VS = 6 to 18 V; Tj = – 40 to 150 °C Parameter Symbol Limit Values min. General Quiescent current Turn-ON delay Turn-OFF delay Turn-ON time Turn-OFF time Undervoltage Undervoltage Logic Control inputs H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Diagnosis output Delay time L-output voltage Leakage current Error detection Switching threshold U Switching threshold L Overcurrent 1 typ. max. Unit Test Condition Iq td1 td2 tr tf VS VS – – – – – – – – 10 – 10 – 5.5 4.5 10 20 10 20 10 5.9 5.2 mA µs µs µs µs V V IL = 0 A Input to output Input to output IQ = 2.5 A; cf diagram IQ = 2.5 A; cf diagram IC ON IC OFF VIH VIL ∆VI II II td VEF IRD VEH VEL IF1 2.8 – 0.4 –2 – 10 20 – – 2 2 3 – – 0.8 – –4 40 – – 2.7 2.7 4 – 1.2 1.2 2 0 60 0.4 10 3.5 3.5 5 V V V µA µA µs V µA V V A – – – VI = VIH VI = VIL – I = 3 mA – Error low Error high Error low Semiconductor Group 7 1998-02-01 TLE 5204 Electrical Characteristics (cont’d) VS = 6 to 18 V; Tj = – 40 to 150 °C Parameter Symbol Limit Values min. Outputs RDSONU RDSONU RDSONL RDSONL Diode forward voltage Diode forward voltage 1) Unit Test Condition typ. max. – – – – VFU VFL – – – – – – – – – – – – 0.4 0.65 0.4 0.65 1.5 1.5 Ω Ω Ω Ω V V VS > 6 V; Tj = 25 °C 1) VS > 6 V; Tj = 150 °C 1) VS > 6 V; Tj = 25 °C 1) VS > 6 V; Tj = 150 °C 1) IF = 3 A IF = 3 A Values for RDSON are for t > 100 µs after applying + VS. Semiconductor Group 8 1998-02-01 TLE 5204 Ιq, ΙS 4700 µF 63 V 470 nF 6 2 1 VS Ι Ι1 3 Ι Q1 RL VEF TLE 5204 V Ι1 Ι Ι2 5 4 7 Ι Q2 V Ι2 ΙM VQ2 V Q1 AES01522 Figure 3 Test Circuit Figure 4 Timing Diagram 9 1998-02-01 Semiconductor Group TLE 5204 + VS = 12 V 220 nF *) 5V 2 kΩ Error Flag 2 3 Control Inputs 5 4 AES01523 6 1 TLE 5204 7 M *) Necessary for isolating supply voltage or interruption (e.g. 470 µF). Figure 5 Application Circuit Semiconductor Group 10 1998-02-01 TLE 5204 Diagrams RON Resistance of Output Stage over Temperature 800 AED01305 Output Voltage on Diagnostics Output versus Current 300 AED01306 R ON mΩ 600 6 V< VS