SE7265L
2.3-2.7 GHz WiMAX Power Amplifier Preliminary
Applications
IEEE802.16e WiMAXTM Mobile WiMAX datacards, modules and terminals
Product Description
The SE7265L WiMAX Power Amplifier is a high performance device offering high output power with high linearity and exceptional efficiency. Designed for portable or mobile applications in the 2.3-2.7 GHz band, it supports the IEEE 802.16e wireless standards.
Features
2.3-2.7 GHz operation 25 dBm Linear output power, at 3.3V 37 dB gain Integrated Step Attenuator and output power detector All RF ports matched for 50 Ω operation Supply voltage: 2.9 V – 4.2 V Lead free, Halogen free, ROHS compliant package (4 mm x 4 mm x 0.9 mm), MSL 1
.
Ordering Information
Part No. SE7265L SE7265L-R SE7265L-EK1 Package 16 pin QFN 16 pin QFN N/A Remark Samples Tape and Reel Evaluation kit
Functional Block Diagram
VDD1 TEMP VDD2 VDD3
Temp Sensor
RF in
RF out
Bias Bias and Control
Power Det
VREF
VATTN
VDET
Figure 1: Functional Block Diagram
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SE7265L
2.3-2.7 GHz WiMAX Power Amplifier Preliminary
http://www.sige.com Email: sales@sige.com
Customer Service Locations: North America: 1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 San Diego Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1279 464217 Fax: +44 1279 464201
Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. Copyright 2009 SiGe Semiconductor, Inc. All Rights Reserved
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