S-1000C44-N4T1G

Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series The S-1000 series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±1.0%. It operates with low current consumption of 350 nA typ. Two output forms, Nch open-drain and CMOS output, are available. CMOS voltage detector, S-1000 Series is the most suitable for the portable equipments with ultra low current consumption, high precision and corresponding to the small package. Features • • • • • • Ultra-low current consumption High-precision detection voltage Operating voltage range Hysteresis characteristics Detection voltage Output form 350 nA typ. (VDD = detection voltage + 1.5 V) ±1.0% 0.95 to 5.5 V 5% typ. 1.5 to 4.6 V (0.1 V step) Nch open-drain output (Active “L”) CMOS output (Active “L”) • Lead-free products Applications • Power monitor for microcomputers and reset for CPUs. • Power monitor for portable equipments such as cellular phones, digital still cameras and PDAs. • Constant voltage power monitor for cameras, video equipments and communication devices. Packages Package name SC-82AB SOT-23-5 SNT-4A Drawing code Package NP004-A MP005-A PF004-A Tape NP004-A MP005-A PF004-A Reel NP004-A MP005-A PF004-A Land − − PF004-A Seiko Instruments Inc. 1 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Block Diagrams 1. Nch open-drain output products Rev.2.3_00 VDD − *1 + *1 OUT VREF VSS *1. Parasitic diode Figure 1 2. CMOS output products VDD *1 − *1 OUT *1 + VREF VSS *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Product Name Structure The detection voltage, output form and packages for S-1000 series can be selected at the user's request. Refer to the "1. Product name" for the construction of the product name and "2. Product name list" for the full product names. 1. Product name S-1000 x xx - xxxx G Package name (abbreviation) and packing specifications*1 N4T1: SC-82AB, tape M5T1: SOT-23-5, tape I4T1: SNT-4A, tape Detection voltage value 15 ~ 46 (e.g. When the detection voltage is 1.5 V, it is expressed as 15.) Output form N: Nch open-drain output (Active “L”) C: CMOS output (Active “L”) *1. Refer to the taping specifications at the end of this book. Seiko Instruments Inc. 3 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. Product name list 2. 1 Nch open-drain output products Table 1 Detection voltage range Rev.2.3_00 SC-82AB S-1000N15-N4T1G S-1000N16-N4T1G S-1000N17-N4T1G S-1000N18-N4T1G S-1000N19-N4T1G S-1000N20-N4T1G S-1000N21-N4T1G S-1000N22-N4T1G S-1000N23-N4T1G S-1000N24-N4T1G S-1000N25-N4T1G S-1000N26-N4T1G S-1000N27-N4T1G S-1000N28-N4T1G S-1000N29-N4T1G S-1000N30-N4T1G S-1000N31-N4T1G S-1000N32-N4T1G S-1000N33-N4T1G S-1000N34-N4T1G S-1000N35-N4T1G S-1000N36-N4T1G S-1000N37-N4T1G S-1000N38-N4T1G S-1000N39-N4T1G S-1000N40-N4T1G S-1000N41-N4T1G S-1000N42-N4T1G S-1000N43-N4T1G S-1000N44-N4T1G S-1000N45-N4T1G S-1000N46-N4T1G SOT-23-5 S-1000N15-M5T1G S-1000N16-M5T1G S-1000N17-M5T1G S-1000N18-M5T1G S-1000N19-M5T1G S-1000N20-M5T1G S-1000N21-M5T1G S-1000N22-M5T1G S-1000N23-M5T1G S-1000N24-M5T1G S-1000N25-M5T1G S-1000N26-M5T1G S-1000N27-M5T1G S-1000N28-M5T1G S-1000N29-M5T1G S-1000N30-M5T1G S-1000N31-M5T1G S-1000N32-M5T1G S-1000N33-M5T1G S-1000N34-M5T1G S-1000N35-M5T1G S-1000N36-M5T1G S-1000N37-M5T1G S-1000N38-M5T1G S-1000N39-M5T1G S-1000N40-M5T1G S-1000N41-M5T1G S-1000N42-M5T1G S-1000N43-M5T1G S-1000N44-M5T1G S-1000N45-M5T1G S-1000N46-M5T1G SNT-4A S-1000N15-I4T1G S-1000N16-I4T1G S-1000N17-I4T1G S-1000N18-I4T1G S-1000N19-I4T1G S-1000N20-I4T1G S-1000N21-I4T1G S-1000N22-I4T1G S-1000N23-I4T1G S-1000N24-I4T1G S-1000N25-I4T1G S-1000N26-I4T1G S-1000N27-I4T1G S-1000N28-I4T1G S-1000N29-I4T1G S-1000N30-I4T1G S-1000N31-I4T1G S-1000N32-I4T1G S-1000N33-I4T1G S-1000N34-I4T1G S-1000N35-I4T1G S-1000N36-I4T1G S-1000N37-I4T1G S-1000N38-I4T1G S-1000N39-I4T1G S-1000N40-I4T1G S-1000N41-I4T1G S-1000N42-I4T1G S-1000N43-I4T1G S-1000N44-I4T1G S-1000N45-I4T1G S-1000N46-I4T1G 1.5 V ± 1.0% 1.6 V ± 1.0% 1.7 V ± 1.0% 1.8 V ± 1.0% 1.9 V ± 1.0% 2.0 V ± 1.0% 2.1 V ± 1.0% 2.2 V ± 1.0% 2.3 V ± 1.0% 2.4 V ± 1.0% 2.5 V ± 1.0% 2.6 V ± 1.0% 2.7 V ± 1.0% 2.8 V ± 1.0% 2.9 V ± 1.0% 3.0 V ± 1.0% 3.1 V ± 1.0% 3.2 V ± 1.0% 3.3 V ± 1.0% 3.4 V ± 1.0% 3.5 V ± 1.0% 3.6 V ± 1.0% 3.7 V ± 1.0% 3.8 V ± 1.0% 3.9 V ± 1.0% 4.0 V ± 1.0% 4.1 V ± 1.0% 4.2 V ± 1.0% 4.3 V ± 1.0% 4.4 V ± 1.0% 4.5 V ± 1.0% 4.6 V ± 1.0% 4 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. 2 CMOS output products Table 2 Detection voltage range SC-82AB S-1000C15-N4T1G S-1000C16-N4T1G S-1000C17-N4T1G S-1000C18-N4T1G S-1000C19-N4T1G S-1000C20-N4T1G S-1000C21-N4T1G S-1000C22-N4T1G S-1000C23-N4T1G S-1000C24-N4T1G S-1000C25-N4T1G S-1000C26-N4T1G S-1000C27-N4T1G S-1000C28-N4T1G S-1000C29-N4T1G S-1000C30-N4T1G S-1000C31-N4T1G S-1000C32-N4T1G S-1000C33-N4T1G S-1000C34-N4T1G S-1000C35-N4T1G S-1000C36-N4T1G S-1000C37-N4T1G S-1000C38-N4T1G S-1000C39-N4T1G S-1000C40-N4T1G S-1000C41-N4T1G S-1000C42-N4T1G S-1000C43-N4T1G S-1000C44-N4T1G S-1000C45-N4T1G S-1000C46-N4T1G SOT-23-5 S-1000C15-M5T1G S-1000C16-M5T1G S-1000C17-M5T1G S-1000C18-M5T1G S-1000C19-M5T1G S-1000C20-M5T1G S-1000C21-M5T1G S-1000C22-M5T1G S-1000C23-M5T1G S-1000C24-M5T1G S-1000C25-M5T1G S-1000C26-M5T1G S-1000C27-M5T1G S-1000C28-M5T1G S-1000C29-M5T1G S-1000C30-M5T1G S-1000C31-M5T1G S-1000C32-M5T1G S-1000C33-M5T1G S-1000C34-M5T1G S-1000C35-M5T1G S-1000C36-M5T1G S-1000C37-M5T1G S-1000C38-M5T1G S-1000C39-M5T1G S-1000C40-M5T1G S-1000C41-M5T1G S-1000C42-M5T1G S-1000C43-M5T1G S-1000C44-M5T1G S-1000C45-M5T1G S-1000C46-M5T1G SNT-4A S-1000C15-I4T1G S-1000C16-I4T1G S-1000C17-I4T1G S-1000C18-I4T1G S-1000C19-I4T1G S-1000C20-I4T1G S-1000C21-I4T1G S-1000C22-I4T1G S-1000C23-I4T1G S-1000C24-I4T1G S-1000C25-I4T1G S-1000C26-I4T1G S-1000C27-I4T1G S-1000C28-I4T1G S-1000C29-I4T1G S-1000C30-I4T1G S-1000C31-I4T1G S-1000C32-I4T1G S-1000C33-I4T1G S-1000C34-I4T1G S-1000C35-I4T1G S-1000C36-I4T1G S-1000C37-I4T1G S-1000C38-I4T1G S-1000C39-I4T1G S-1000C40-I4T1G S-1000C41-I4T1G S-1000C42-I4T1G S-1000C43-I4T1G S-1000C44-I4T1G S-1000C45-I4T1G S-1000C46-I4T1G 1.5 V ± 1.0% 1.6 V ± 1.0% 1.7 V ± 1.0% 1.8 V ± 1.0% 1.9 V ± 1.0% 2.0 V ± 1.0% 2.1 V ± 1.0% 2.2 V ± 1.0% 2.3 V ± 1.0% 2.4 V ± 1.0% 2.5 V ± 1.0% 2.6 V ± 1.0% 2.7 V ± 1.0% 2.8 V ± 1.0% 2.9 V ± 1.0% 3.0 V ± 1.0% 3.1 V ± 1.0% 3.2 V ± 1.0% 3.3 V ± 1.0% 3.4 V ± 1.0% 3.5 V ± 1.0% 3.6 V ± 1.0% 3.7 V ± 1.0% 3.8 V ± 1.0% 3.9 V ± 1.0% 4.0 V ± 1.0% 4.1 V ± 1.0% 4.2 V ± 1.0% 4.3 V ± 1.0% 4.4 V ± 1.0% 4.5 V ± 1.0% 4.6 V ± 1.0% Seiko Instruments Inc. 5 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Output Forms 1. Output forms in S-1000 series Table 3 Rev.2.3_00 S-1000 series Nch open-drain output products (Active “L”) “N” is the last letter of the product name. e.g. S-1000N CMOS output products (Active “L”) “C” is the last letter of the product name. e.g. S-1000C 2. Output form and their usage Table 4 Usage Different power supplies Active “L” reset for CPUs Active “H” reset for CPUs Detection voltage change by resistor divider • Example for two power supplies Nch open-drain output products (Active “L”) Yes Yes No Yes CMOS output products (Active “L”) No Yes No No • Example for one power supply VDD1 VDD2 VDD VDD V/D Nch VSS OUT CPU V/D CMOS OUT VSS CPU V/D Nch OUT CPU VSS Figure 3 6 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Pin Configurations SC-82AB Top view 4 3 Table 5 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin NC*1 3 No connection 4 VSS GND pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 1 2 Figure 4 SOT-23-5 Top view 5 4 Table 6 1 2 3 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin NC*1 4 No connection NC*1 5 No connection *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 5 SNT-4A Top view Table 7 1 2 4 3 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VSS GND pin NC*1 3 No connection 4 VDD Voltage input pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 6 Seiko Instruments Inc. 7 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Absolute Maximum Ratings Table 8 Rev.2.3_00 Item Power supply voltage Nch open-drain output products Output voltage CMOS output products Output current SC-82AB Power dissipation SOT-23-5 Symbol VDD − VSS VOUT IOUT PD SNT-4A Operating ambient temperature Storage temperature *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Topr Tstg (Ta = 25 °C unless otherwise specified) Absolute maximum ratings Unit 6 V VSS − 0.3 to VSS + 6 V V VSS − 0.3 to VDD + 0.3 50 mA 200 (When not mounted on board) mW 350*1 mW 300 (When not mounted on board) mW 600*1 mW 300*1 mW −40 to +85 °C −40 to +125 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Dissipation ( PD) [mW] 600 500 400 300 200 100 0 0 100 150 50 Ambient Temperature ( Ta) [° C] SOT-23-5 S C-82AB SNT-4A Figure 7 Power Dissipation of Package (When Mounted on Board) 8 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Electrical Characteristics 1. Nch open-drain output products Table 9 (Ta = 25 °C unless otherwise specified) Item Detection voltage*1 Hysteresis width Current consumption Operating voltage Output current Leakage current Response time Symbol Condition Min. Typ. Max. −VDET(S) ×1.01 −VDET ×0.07 900 Unit Measurement circuit 1 1 2 2 1 3 3 1 1 −VDET VHYS ISS VDD IOUT ILEAK tPLH −VDET(S) −VDET(S) ×0.99 −VDET −VDET − ×0.03 ×0.05 VDD = −VDET(S) + 1.5 V S-1000N15 to 39 − 350 − V V nA nA V mA nA µs VDD = 5.5 V − S-1000N40 to 46 − 350 − 900 5.5 − 0.95 1.36 − − − Output transistor, Nch, VDS = 0.5 V, VDD = 1.2 V Output transistor, Nch, VDS = 5.5 V, VDD = 5.5 V − 2.55 − − ±100 100 60 ±350 ∆−VDET Detection voltage temperature coefficient*2 ∆Ta•−VDET Ta = −40 to +85 °C ppm / °C *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1.) *2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation. ∆ − VDET [mV / °C]*1 = − VDET(S) (Typ.) [ V ]*2 × ∆ − VDET [ppm / °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Seiko Instruments Inc. 9 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. CMOS output products Table 10 Rev.2.3_00 (Ta = 25 °C unless otherwise specified) Item Detection voltage*1 Hysteresis width Current consumption Operating voltage Output current Symbol −VDET Condition − Min. Typ. Max. −VDET(S) ×1.01 −VDET ×0.07 900 Unit Measurement circuit 1 1 2 2 1 3 4 VHYS ISS VDD IOUT −VDET(S) −VDET(S) ×0.99 −VDET −VDET − ×0.03 ×0.05 VDD = −VDET(S)+ 1.5 V S-1000C15 to 39 − 350 V V nA nA V mA mA VDD = 5.5 V S-1000C40 to 46 Response time tPLH − − 60 µs 1 ∆−VDET Detection voltage ppm/ Ta = −40 to +85 °C − ±100 ±350 1 temperature coefficient*2 ∆Ta•−VDET °C *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 2.) *2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation. − Output transistor, Nch, VDS = 0.5 V, VDD = 1.2 V Output transistor, Pch, VDS = 0.5 V, VDD = 5.5 V − − 0.95 350 − 2.55 2.76 900 5.5 − − 1.36 1.71 ∆ − VDET [mV / °C]*1 = − VDET(S) (Typ.) [ V ]*2 × ∆ − VDET [ppm / °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient 10 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Measurement Circuits 1. VDD VDD V S-1000 Series V VSS OUT R*1 100 k Ω *1. R is unnecessary for CMOS output products. Figure 8 2. A VDD VDD S-1000 Series VSS Figure 9 3. OUT VDD VDD V S-1000 Series VSS V OUT A VDS Figure 10 4. VDS VDD VDD V S -1000 Series VSS Figure 11 V OUT A Seiko Instruments Inc. 11 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Timing Chart 1. Nch open-drain output products VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS Rev.2.3_00 Hysteresis width (VHYS) VDD OUT VSS V R 100 kΩ VDD Output from the OUT pin VSS Figure 12 2. CMOS output products Hysteresis width (VHYS) VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS VDD OUT VSS VDD Output from the OUT pin VSS V Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region. Figure 13 12 Seiko Instruments Inc. Rev.2.3_00 Operation ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 1. Basic operation: CMOS output (Active “L”) (1) When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (“H”) at the output. Since the Nch transistor N1 in Figure 14 is OFF, the (RB + RC) • VDD comparator input voltage is . RA + RB + RC (2) When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 15), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 14 RB • VDD becomes ON, the comparator input voltage is changed to . RA + RB (3) When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD. (4) The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET. (5) When the VDD rises above +VDET (point B in Figure 15), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD level at the output. VDD *1 *1 RA − + Pch *1 OUT RB VREF RC VSS N1 Nch *1. Parasiteic diode Figure 14 Operation 1 Seiko Instruments Inc. 13 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 (1) (2) (3) (4) B (5) VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS Hysteresis width (VHYS) A VDD Output from the OUT pin VSS Figure 15 Operation 2 2. Other characteristics 2. 1 Temperature characteristics of detection voltage The shaded area in Figure 16 shows the temperature characteristics of the detection voltage. −VDET [V] +0.945 mV/°C −VDET25 *1 −0.945 mV/°C −40 25 85 Ta [°C] *1. −VDET25 is an actual detection voltage value at 25°C. Figure 16 Temperature characteristics of detection voltage (Example for −VDET = 2.7 V) 2. 2 Temperature characteristics of release voltage ∆ + VDET ∆ − VDET of the release voltage is calculated by the temperature change of the ∆Ta ∆Ta detection voltage as follows: ∆ + VDET + VDET ∆ − VDET = × ∆Ta − VDET ∆Ta The temperature changes of the release voltage and the detection voltage have the same sign consequently. The temperature change 14 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. 3 Temperature characteristics of hysteresis voltage The temperature changes of the hysteresis voltage is expressed as follows: ∆ + VDET ∆ − VDET VHYS ∆ − VDET − = × ∆Ta ∆Ta − VDET ∆Ta ∆ + VDET ∆ − VDET and is calculated as − ∆Ta ∆Ta Standard Circuit R* 100 kΩ OUT VSS 1 VDD *1. R is unnecessary for CMOS output products. Figure 17 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Explanation of Terms 1. Detection voltage (−VDET), release voltage (+VDET) The detection voltage (−VDET) is a voltage at which the output turns to “L”. The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 18). Example: For the S-1000C15, the detection voltage lies in the range of 1.485 ≤ (−VDET) ≤ 1.515. This means that some S-1000C15s have 1.485 V for −VDET and some have 1.515 V. The release voltage is a voltage at which the output turns to “H”. The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 19). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by −VDET × 1.03 ≤ +VDET ≤ −VDET × 1.07. Example: For the S-1000C15, the release voltage lies in the range of 1.530 ≤ (+VDET) ≤ 1.621. This means that some S-1000C15s have 1.530 V for +VDET and some have 1.621 V. Seiko Instruments Inc. 15 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 VDD Detection voltage (−VDET) Max. (−VDET) Min. Detection voltage range VDD Release voltage (+VDET) Max. (+VDET) Min. Release voltage range OUT OUT Figure 18 Detection voltage (CMOS output products) 2. Hysteresis width (VHYS) Figure 19 Release voltage (CMOS output products) The hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B − The voltage at point A = VHYS in Figure 15). The existence of the hysteresis width prevents malfunction caused by noise on input signal. 3. Through-type current The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain output products. 4. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 20), taking a CMOS active “L” product for example, the through-type current which is generated when the output goes from “L” to “H” (release) causes a voltage drop equal to [through-type current] × [input resistance] across the resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from “L” to “H”. The through-type current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN S-1000C OUT RB VSS Figure 20 An example for bad implementation of input voltage divider 16 Seiko Instruments Inc. Rev.2.3_00 Precautions ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series • If the input impedance is high, oscillation may occur due to the through-type current etc. In COMS output products, impedance should not be connected to the input pin. In Nch open drain output products, input impedance is recommended to be 800 Ω or less. However be sure to perform sufficient evaluation under the actual usage conditions for selection, including evaluation of temperature characteristics. • In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage. • When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the products on the circuits described herein. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party. Seiko Instruments Inc. 17 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Typical Characteristics (Typical Data) 1. Detection voltage (VDET) − temperature (Ta) S-1000C15 1.59 1.58 1.57 1.56 1.55 1.54 1.53 1.52 1.50 1.49 -40 Rev.2.3_00 +VDET -VDET -20 0 20 40 Ta [°C] 60 80 S-1000C46 4.85 4.80 4.75 4.70 4.65 4.60 4.55 4.50 4.45 4.40 -40 +VDET VDET [V] VDET [V] -VDET -20 0 20 40 Ta [°C] 60 80 2. Hysteresis voltage width − (VHYS) - temperature (Ta) S-1000C15 8.0 7.0 S-1000C46 8.0 7.0 VHYS [%] VHYS [%] 6.0 5.0 4.0 3.0 -40 -20 0 20 40 Ta [°C] 60 80 6.0 5.0 4.0 3.0 -40 -20 0 20 40 Ta [°C] 60 80 3. Current consumption (ISS) − input voltage (VDD) S-1000C15 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1.0 Ta = 25 °C S-1000C46 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Ta = 25 °C ISS [µA] 2.0 3.0 4.0 VDD [V] 5.0 6.0 ISS [µA] 1.0 2.0 3.0 4.0 VDD [V] 5.0 6.0 4. Current consumption (ISS) − temperature (Ta) S-1000C15 0.8 0.6 VDD = 3.0 V S-1000C46 0.8 0.6 VDD = 5.5 V ISS [µA] 0.4 0.2 0.0 -40 -20 0 20 40 Ta [°C] 60 80 ISS [µA] 0.4 0.2 0.0 -40 -20 0 20 40 Ta [°C] 60 80 18 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 6. Pch transistor output current (IOUT) − VDS S-1000C15 20.0 Ta = 25 °C VDD = 4.6 V 5. Nch transistor output current (IOUT) − VDS S-1000C46 / S-1000N46 20.0 IOUT [mA] Ta = 25 °C VDD = 3.6 V VDD = 2.4 V IOUT [mA] 15.0 10.0 5.0 0 0 VDD = 1.2 V VDD = 1.0 V 1.0 2.0 VDS [V] 3.0 4.0 15.0 10.0 5.0 0 0 1.0 VDD = 3.6 V VDD = 2.4 V VDD = 1.9 V 2.0 VDS [V] 3.0 4.0 7. Nch transistor output current (IOUT) S-1000C46 / S-1000N46 8.0 VDS = 0.5 V 8. Pch transistor output current (IOUT) S-1000C15 4.0 Ta = -40 °C Ta = 25 °C Ta = 85 °C VDS = 0.5 V IOUT [mA] 4.0 2.0 0 0 IOUT [mA] 5.0 6.0 Ta = -40 °C Ta = 25 °C Ta = 85 °C 3.0 2.0 1.0 0 0 1.0 2.0 3.0 VDD [V] 4.0 2.0 4.0 VDD [V] 6.0 8.0 9. Minimum operating voltage - input voltage (VDD) S-1000N15 0.8 0.6 Pull-up to VDD Pull-up resistance : 100 kΩ S-1000N15 3.0 2.5 VOUT [V] Pull-up to 3.0 V Pull-up resistance : 100 kΩ Ta = -40 °C Ta = 25 °C Ta = 85 °C VOUT [V] 0.4 0.2 0 0 0.2 Ta = -40 °C Ta = 25 °C Ta = 85 °C 2.0 1.5 1.0 0.5 0 0.6 0.4 VDD [V] 0.8 1.0 0 0.5 1.5 1.0 VDD [V] 2.0 2.5 S-1000N46 0.8 0.6 Pull-up to VDD Pull-up resistance : 100 kΩ S-1000N46 6.0 5.0 4.0 3.0 2.0 1.0 0 Pull-up to 5.5 V Pull-up resistance : 100 kΩ Ta = -40 °C Ta = 25 °C Ta = 85 °C VOUT [V] 0.4 0.2 0 0 0.2 Ta = 25 °C Ta = 85 °C VOUT [V] Ta = -40 °C 0.6 0.4 VDD [V] 0.8 1.0 0 1.0 3.0 2.0 VDD [V] 4.0 5.0 Seiko Instruments Inc. 19 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series S-1000N15 0.60 0.55 VDDmin [V] Rev.2.3_00 Pull-up resistance : 100 kΩ Ta = -40 °C Ta = 25 °C Ta = 85 °C VOUT(V) PULL-UP 0.50 0.45 0.40 0.35 0.30 PULL-UP× 0.1 0 VDDmin VDD(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Pull-up [V] Pull-up resistance : 100 kΩ Ta = -40 °C Remark VDDmin. is defined by the VDD voltage at which VOUT goes below 10% of pull-up voltage when the VDD increase from 0 V. Figure 21 S-1000N46 0.60 0.55 VDDmin [V] 0.50 0.45 0.40 0.35 0.30 Ta = 25 °C Ta = 85 °C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Pull-up [V] 10. Dynamic response - COUT S-1000N15 100 Response time [ms] Pull-up to VDD Pull-up resistance : 100 kΩ Ta = 25 °C tPLH S-1000C15 1 0.1 0.01 tPLH 0.001 0.00001 0.0001 0.001 0.01 Load capacitance [µF] 0.1 Ta = 25 °C 10 1 0.1 0.01 0.001 0.00001 Response time [ms] tPHL tPHL 0.0001 0.001 0.01 Load capacitance [µF] 0.1 S-1000N46 100 Pull-up to VDD Pull-up resistance : 100 kΩ Ta = 25 °C tPLH S-1000C46 1 0.1 0.01 tPHL 0.001 0.00001 0.0001 0.001 0.01 Load capacitance [µF] 0.1 tPLH Ta = 25 °C Response time [ms] 10 1 0.1 0.01 0.001 0.00001 tPHL 0.0001 0.001 0.01 Load capacitance [µF] 0.1 20 Seiko Instruments Inc. Response time [ms] Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 1 µs VIH Input voltagae VIL VDD Output voltage VDD × 10% tPHL 1 µs VDD V VDD S-1000 Series VSS OUT COUT R*1 100 kΩ tPLH VDD × 90% V *1. R is unnecessary for CMOS output products. Figure 23 Measurement circuit for response time VIH = 5.5 V, VIL = 0.95 V Figure 22 Measurement condition for response time Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Application Circuit Examples 1. Microcomputer reset circuits If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 24, 25 can be easily constructed with the help of the S-1000 series, that has low operating voltage, a high-precision detection voltage and hysteresis. VDD1 VDD VDD2 S-1000N S-1000C Microcomputer VSS Microcomputer VSS (Only for Nch open-drain products) Figure 24 Reset circuit example(S-1000C) Figure 25 Reset circuit example (S-1000N) Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Seiko Instruments Inc. 21 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 2. Power-on reset circuit A power-on reset circuit can be constructed using Nch open-drain output product of S-1000 Series. VDD R *1 Di VIN *2 S-1000N OUT C*1 (Nch open-drain products) VSS *1. R should be 75 kΩ or less, and C should be 0.01 µF or more to prevent oscillation. If C is not connected, R should be 800 Ω or less. *2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling, Di can be removed when the delay of the falling time is not important. Figure 26 VDD ( V) OUT (V) t (s) t ( s) Figure 27 Remark When the power rises sharply as shown in the Figure 28 left, the output may go to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage. VDD (V) OUT (V) t (s) t (s) Figure 28 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. 22 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 3. Change of detection voltage In Nch open-drain output products of the S-1000 series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes. VDD RA *1 VDD Vf1 Vf2 VIN + S-1000N OUT VIN S-1000N OUT RB C VSS *1 − (Nch open-drain output products) (Nch open-drain output product) VSS Detection voltagae = RA + RB • − VDET RB RA + RB Hysterisis width = • VHYS RB Detection voltage = Vf1+Vf2+(−VDET) Figure 30 *1. RA should be 75 kΩ or less, and C should be 0.01 µF or more to prevent oscillation. If C is not connected, RA should be 800 Ω or less. Caution If RA and RB are large, the hysteresis width may also be larger than the value given by the above equation due to the through-type current (which flows slightly in an Nch open-drain product). Figure 29 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Seiko Instruments Inc. 23 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Marking Specifications (1) SC-82AB Rev.2.3_00 SC-82AB Top view 4 (1) 1 (2) (3) 2 3 (1) to (3): Product code (refer to Product name vs. Product code) Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-N4T1G P L A S-1000N16-N4T1G P L B S-1000N17-N4T1G P L C S-1000N18-N4T1G P L D S-1000N19-N4T1G P L E S-1000N20-N4T1G P L F S-1000N21-N4T1G P L G S-1000N22-N4T1G P L H S-1000N23-N4T1G P L I S-1000N24-N4T1G P L J S-1000N25-N4T1G P L K S-1000N26-N4T1G P L L S-1000N27-N4T1G P L M S-1000N28-N4T1G P L N S-1000N29-N4T1G P L O S-1000N30-N4T1G P L P (b) CMOS output products Product Name S-1000N31-N4T1G S-1000N32-N4T1G S-1000N33-N4T1G S-1000N34-N4T1G S-1000N35-N4T1G S-1000N36-N4T1G S-1000N37-N4T1G S-1000N38-N4T1G S-1000N39-N4T1G S-1000N40-N4T1G S-1000N41-N4T1G S-1000N42-N4T1G S-1000N43-N4T1G S-1000N44-N4T1G S-1000N45-N4T1G S-1000N46-N4T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 Product Name S-1000C15-N4T1G S-1000C16-N4T1G S-1000C17-N4T1G S-1000C18-N4T1G S-1000C19-N4T1G S-1000C20-N4T1G S-1000C21-N4T1G S-1000C22-N4T1G S-1000C23-N4T1G S-1000C24-N4T1G S-1000C25-N4T1G S-1000C26-N4T1G S-1000C27-N4T1G S-1000C28-N4T1G S-1000C29-N4T1G S-1000C30-N4T1G Product Code (1) (2) (3) P A K P B K P C K P D K P E K P F K P G K P H K P I K P J K P K K P L K P M K N P K P O K P P K Product Name S-1000C31-N4T1G S-1000C32-N4T1G S-1000C33-N4T1G S-1000C34-N4T1G S-1000C35-N4T1G S-1000C36-N4T1G S-1000C37-N4T1G S-1000C38-N4T1G S-1000C39-N4T1G S-1000C40-N4T1G S-1000C41-N4T1G S-1000C42-N4T1G S-1000C43-N4T1G S-1000C44-N4T1G S-1000C45-N4T1G S-1000C46-N4T1G Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K 24 Seiko Instruments Inc. Rev.2.3_00 (2) SOT-23-5 SOT-23-5 Top view 5 4 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series (1) to (3) : (4) : Product code (refer to Product name vs. Product code) Lot number (1) (2) (3) (4) 1 2 3 Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-M5T1G P L A S-1000N16-M5T1G P L B S-1000N17-M5T1G P L C S-1000N18-M5T1G P L D S-1000N19-M5T1G P L E S-1000N20-M5T1G P L F S-1000N21-M5T1G P L G S-1000N22-M5T1G P L H S-1000N23-M5T1G P L I S-1000N24-M5T1G P L J S-1000N25-M5T1G P L K S-1000N26-M5T1G P L L S-1000N27-M5T1G P L M S-1000N28-M5T1G P L N S-1000N29-M5T1G P L O S-1000N30-M5T1G P L P (b) CMOS output products Product Name S-1000N31-M5T1G S-1000N32-M5T1G S-1000N33-M5T1G S-1000N34-M5T1G S-1000N35-M5T1G S-1000N36-M5T1G S-1000N37-M5T1G S-1000N38-M5T1G S-1000N39-M5T1G S-1000N40-M5T1G S-1000N41-M5T1G S-1000N42-M5T1G S-1000N43-M5T1G S-1000N44-M5T1G S-1000N45-M5T1G S-1000N46-M5T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 Product Name S-1000C15-M5T1G S-1000C16-M5T1G S-1000C17-M5T1G S-1000C18-M5T1G S-1000C19-M5T1G S-1000C20-M5T1G S-1000C21-M5T1G S-1000C22-M5T1G S-1000C23-M5T1G S-1000C24-M5T1G S-1000C25-M5T1G S-1000C26-M5T1G S-1000C27-M5T1G S-1000C28-M5T1G S-1000C29-M5T1G S-1000C30-M5T1G Product Code (1) (2) (3) A P K P B K C P K P D K P E K P F K P G K P H K P I K P J K P K K P L K P M K P N K P O K P P K Product Name S-1000C31-M5T1G S-1000C32-M5T1G S-1000C33-M5T1G S-1000C34-M5T1G S-1000C35-M5T1G S-1000C36-M5T1G S-1000C37-M5T1G S-1000C38-M5T1G S-1000C39-M5T1G S-1000C40-M5T1G S-1000C41-M5T1G S-1000C42-M5T1G S-1000C43-M5T1G S-1000C44-M5T1G S-1000C45-M5T1G S-1000C46-M5T1G Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K Seiko Instruments Inc. 25 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series (3) SNT-4A SNT-4A Top view 1 (1) (2) (3) 2 3 4 Rev.2.3_00 (1) to (3): Product code (refer to Product name vs. Product code) Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-I4T1G P L A S-1000N16-I4T1G P L B S-1000N17-I4T1G P L C S-1000N18-I4T1G P L D S-1000N19-I4T1G P L E S-1000N20-I4T1G P L F S-1000N21-I4T1G P L G S-1000N22-I4T1G P L H S-1000N23-I4T1G P L I S-1000N24-I4T1G P L J S-1000N25-I4T1G P L K S-1000N26-I4T1G P L L S-1000N27-I4T1G P L M S-1000N28-I4T1G P L N S-1000N29-I4T1G P L O S-1000N30-I4T1G P L P (b) CMOS output products Product Name S-1000N31-I4T1G S-1000N32-I4T1G S-1000N33-I4T1G S-1000N34-I4T1G S-1000N35-I4T1G S-1000N36-I4T1G S-1000N37-I4T1G S-1000N38-I4T1G S-1000N39-I4T1G S-1000N40-I4T1G S-1000N41-I4T1G S-1000N42-I4T1G S-1000N43-I4T1G S-1000N44-I4T1G S-1000N45-I4T1G S-1000N46-I4T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 Product Name S-1000C15-I4T1G S-1000C16-I4T1G S-1000C17-I4T1G S-1000C18-I4T1G S-1000C19-I4T1G S-1000C20-I4T1G S-1000C21-I4T1G S-1000C22-I4T1G S-1000C23-I4T1G S-1000C24-I4T1G S-1000C25-I4T1G S-1000C26-I4T1G S-1000C27-I4T1G S-1000C28-I4T1G S-1000C29-I4T1G S-1000C30-I4T1G Product Code (1) (2) (3) P A K B P K P C K P D K P E K F P K P G K P H K P I K P J K P K K P L K P M K P N K O P K P P K Product Name S-1000C31-I4T1G S-1000C32-I4T1G S-1000C33-I4T1G S-1000C34-I4T1G S-1000C35-I4T1G S-1000C36-I4T1G S-1000C37-I4T1G S-1000C38-I4T1G S-1000C39-I4T1G S-1000C40-I4T1G S-1000C41-I4T1G S-1000C42-I4T1G S-1000C43-I4T1G S-1000C44-I4T1G S-1000C45-I4T1G S-1000C46-I4T1G Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K 26 Seiko Instruments Inc. 2.0±0.2 4 1.3±0.2 3 0.05 1 2 0.16 -0.06 +0.1 0.3 -0.05 +0.1 0.4 -0.05 +0.1 No. NP004-A-P-SD-1.1 TITLE No. SCALE UNIT SC82AB-A-PKG Dimensions NP004-A-P-SD-1.1 mm Seiko Instruments Inc. ø1.5 -0 +0.1 4.0±0.1 2.0±0.05 4.0±0.1 1.1±0.1 0.2±0.05 ø1.05±0.1 (0.7) 2.2±0.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE No. SCALE UNIT SC82AB-A-Carrier Tape NP004-A-C-SD-3.0 mm Seiko Instruments Inc. 4.0±0.1 2.0±0.1 ø1.5 +0.1 -0 1.1±0.1 0.2±0.05 4.0±0.1 ø1.05±0.1 2.3±0.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE No. SCALE UNIT SC82AB-A-Carrier Tape NP004-A-C-S1-2.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. NP004-A-R-SD-1.1 TITLE No. SCALE UNIT mm SC82AB-A-Reel NP004-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 2.9±0.2 1.9±0.2 5 4 1 2 3 0.16 -0.06 +0.1 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SCALE UNIT SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 0.25±0.1 ø1.0 -0 +0.2 4.0±0.1 1.4±0.2 3.2±0.2 321 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE No. SCALE UNIT SOT235-A-Carrier Tape MP005-A-C-SD-2.1 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. MP005-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT235-A-Reel MP005-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 1.2±0.04 4 3 1 2 +0.05 0.08 -0.02 0.65 0.48±0.02 0.2±0.05 No. PF004-A-P-SD-4.0 TITLE No. SCALE UNIT SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 mm Seiko Instruments Inc. ø1.5 -0 +0.1 2.0±0.05 4.0±0.1 0.25±0.05 5° 1.45±0.1 ø0.5 -0 +0.1 4.0±0.1 0.65±0.05 2 1 3 4 Feed direction No. PF004-A-C-SD-1.0 TITLE No. SCALE UNIT SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. PF004-A-R-SD-1.0 TITLE No. SCALE UNIT mm SNT-4A-A-Reel PF004-A-R-SD-1.0 QTY. 5,000 Seiko Instruments Inc. 0.52 1.16 0.52 0.3 0.35 0.3 Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff. No. PF004-A-L-SD-3.0 TITLE No. SCALE UNIT SNT-4A-A-Land Recommendation PF004-A-L-SD-3.0 mm Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.