Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS output, are available. Ultra-low current consumption and miniature package lineup can meet demand from the portable device applications.
Features
• Ultra-low current consumption • • • • • 1.3 µA typ. (detection voltage≤1.4 V, at VDD=1.5 V) 0.8 µA typ. (detection voltage≥1.5 V, at VDD=3.5 V) High-precision detection voltage ±2.0 % Operating voltage range 0.65 V to 5.0 V (detection voltage≤1.4 V) 0.95 V to 10.0 V (detection voltage≥1.5 V) Hysteresis characteristics 5 % typ. Detection voltage 0.8 V to 6.0 V (0.1 V step) Output form Nch open-drain output (Active Low) CMOS output (Active Low)
Applications
• Battery checkers • Power failure detectors • Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote controllers. • Constant voltage power monitor for cameras, video equipments and communication devices. • Power monitor for microcomputers and reset for CPUs.
Packages
Package name SC-82AB SOT-23-5 SOT-89-3 SNT-4A TO-92 (Bulk) TO-92 (Tape and reel) TO-92 (Tape and ammo) Package NP004-A MP005-A UP003-A PF004-A YS003-B YF003-A YF003-A Drawing code Tape Reel NP004-A NP004-A MP005-A MP005-A UP003-A UP003-A PF004-A PF004-A YF003-A YF003-A YZ003-C Zigzag YZ003-C
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Block Diagrams
1. Nch Open-drain Output Products
Rev.3.2_00
VDD −
*1
+
*1
OUT
VREF VSS
*1. Parasitic diode Figure 1 2. CMOS Output Products
VDD
*1
−
*1
OUT
*1
+
VREF VSS
*1. Parasitic diode Figure 2
2
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request. Refer to the "1. Product Name" for the construction of the product name and "2. Product Name List" for the full product names. 1. Product Name 1-1. SC-82AB, SOT-23-5, SOT-89-3 packages
S-808xx
Cx
xx
−
xxx
−
T2 IC detection in tape specifications T2: SC-82AB, SOT-23-5, SOT-89-3 Product code
*2 *1
Package code NB: SC-82AB MC: SOT-23-5 UA: SOT-89-3 Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 08 to 60 (e.g. When the detection voltage is 0.8 V, it is expressed as 08.)
*1. Refer to the taping specifications at the end of this book. T2 is the standard. *2. Refer to the Table 1 and 3 in the “2. Product Name List” 1-2. SNT-4A packages
S-808xx
Cx
PF
−
xxx
TF
G Fixed IC detection in tape specifications TF: SNT-4A Product code
*2 *1
Package code PF: SNT-4A Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 08 to 60 (e.g. When the detection voltage is 0.8 V, it is expressed as 08.) *1. Refer to the taping specifications at the end of this book. TF is the standard. *2. Refer to the Table 2 and 4 in the “2. Product Name List”
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
1-3. TO-92 package
Rev.3.2_00
S-808xx
C
xY−x Packing form B: Bulk T: Tape and reel Z: Tape and ammo Package code Y: TO-92 Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 15 to 60 (e.g. When the detection voltage is 1.5 V, it is expressed as 15.)
2. Product Name List 2-1. Nch Open-drain Output Products Table 1 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.4 V typ. 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 4.4 ± 0.1 V*1 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V SC-82AB S-80808CNNB-B9M-T2 S-80809CNNB-B9N-T2 S-80810CNNB-B9O-T2 S-80811CNNB-B9P-T2 S-80812CNNB-B9Q-T2 S-80813CNNB-B9R-T2 S-80814CNNB-B9S-T2 S-80815CNNB-B8A-T2 S-80816CNNB-B8B-T2 S-80817CNNB-B8C-T2 S-80818CNNB-B8D-T2 S-80819CNNB-B8E-T2 S-80820CNNB-B8F-T2 S-80821CNNB-B8G-T2 S-80822CNNB-B8H-T2 S-80823CNNB-B8I-T2 S-80824CNNB-B8J-T2 S-80825CNNB-B8K-T2 S-80826CNNB-B8L-T2 S-80827CNNB-B8M-T2 S-80828CNNB-B8N-T2 S-80829CNNB-B8O-T2 S-80830CNNB-B8P-T2 S-80831CNNB-B8Q-T2 SOT-23-5 S-80815CNMC-B8A-T2 S-80816CNMC-B8B-T2 S-80817CNMC-B8C-T2 S-80818CNMC-B8D-T2 S-80819CNMC-B8E-T2 S-80820CNMC-B8F-T2 S-80821CNMC-B8G-T2 S-80822CNMC-B8H-T2 S-80823CNMC-B8I-T2 S-80824CNMC-B8J-T2 S-80825CNMC-B8K-T2 S-80826CNMC-B8L-T2 S-80827CNMC-B8M-T2 S-80828CNMC-B8N-T2 S-80829CNMC-B8O-T2 S-80830CNMC-B8P-T2 S-80831CNMC-B8Q-T2 SOT-89-3 S-80815CNUA-B8A-T2 S-80816CNUA-B8B-T2 S-80817CNUA-B8C-T2 S-80818CNUA-B8D-T2 S-80819CNUA-B8E-T2 S-80820CNUA-B8F-T2 S-80821CNUA-B8G-T2 S-80822CNUA-B8H-T2 S-80823CNUA-B8I-T2 S-80824CNUA-B8J-T2 S-80824KNUA-D2B-T2*2 S-80825CNUA-B8K-T2 S-80826CNUA-B8L-T2 S-80827CNUA-B8M-T2 S-80828CNUA-B8N-T2 S-80829CNUA-B8O-T2 S-80830CNUA-B8P-T2 S-80831CNUA-B8Q-T2
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Table 1 (2/2)
Detection Hysteresis width SC-82AB SOT-23-5 SOT-89-3 voltage range (Typ.) 0.160 V S-80832CNNB-B8R-T2 S-80832CNMC-B8R-T2 S-80832CNUA-B8R-T2 3.2 V±2.0 % 0.165 V S-80833CNNB-B8S-T2 S-80833CNMC-B8S-T2 S-80833CNUA-B8S-T2 3.3 V±2.0 % 0.170 V S-80834CNNB-B8T-T2 S-80834CNMC-B8T-T2 S-80834CNUA-B8T-T2 3.4 V±2.0 % 0.175 V S-80835CNNB-B8U-T2 S-80835CNMC-B8U-T2 S-80835CNUA-B8U-T2 3.5 V±2.0 % 0.180 V S-80836CNNB-B8V-T2 S-80836CNMC-B8V-T2 S-80836CNUA-B8V-T2 3.6 V±2.0 % 0.185 V S-80837CNNB-B8W-T2 S-80837CNMC-B8W-T2 S-80837CNUA-B8W-T2 3.7 V±2.0 % 0.190 V S-80838CNNB-B8X-T2 S-80838CNMC-B8X-T2 S-80838CNUA-B8X-T2 3.8 V±2.0 % 0.195 V S-80839CNNB-B8Y-T2 S-80839CNMC-B8Y-T2 S-80839CNUA-B8Y-T2 3.9 V±2.0 % 0.200 V S-80840CNNB-B8Z-T2 S-80840CNMC-B8Z-T2 S-80840CNUA-B8Z-T2 4.0 V±2.0 % 0.205 V S-80841CNNB-B82-T2 S-80841CNMC-B82-T2 S-80841CNUA-B82-T2 4.1 V±2.0 % 0.210 V S-80842CNNB-B83-T2 S-80842CNMC-B83-T2 S-80842CNUA-B83-T2 4.2 V±2.0 % 0.215 V S-80843CNNB-B84-T2 S-80843CNMC-B84-T2 S-80843CNUA-B84-T2 4.3 V±2.0 % 0.220 V S-80844CNNB-B85-T2 S-80844CNMC-B85-T2 S-80844CNUA-B85-T2 4.4 V±2.0 % 0.225 V S-80845CNNB-B86-T2 S-80845CNMC-B86-T2 S-80845CNUA-B86-T2 4.5 V±2.0 % 0.230 V S-80846CNNB-B87-T2 S-80846CNMC-B87-T2 S-80846CNUA-B87-T2 4.6 V±2.0 % 0.10 V max. S-80846KNUA-D2C-T2*3 4.6 V± 0.10 V 0.235 V S-80847CNNB-B88-T2 S-80847CNMC-B88-T2 S-80847CNUA-B88-T2 4.7 V±2.0 % 0.240 V S-80848CNNB-B89-T2 S-80848CNMC-B89-T2 S-80848CNUA-B89-T2 4.8 V±2.0 % 0.245 V S-80849CNNB-B9A-T2 S-80849CNMC-B9A-T2 S-80849CNUA-B9A-T2 4.9 V±2.0 % 0.250 V S-80850CNNB-B9B-T2 S-80850CNMC-B9B-T2 S-80850CNUA-B9B-T2 5.0 V±2.0 % 0.255 V S-80851CNNB-B9C-T2 S-80851CNMC-B9C-T2 S-80851CNUA-B9C-T2 5.1 V±2.0 % 0.260 V S-80852CNNB-B9D-T2 S-80852CNMC-B9D-T2 S-80852CNUA-B9D-T2 5.2 V±2.0 % 0.265 V S-80853CNNB-B9E-T2 S-80853CNMC-B9E-T2 S-80853CNUA-B9E-T2 5.3 V±2.0 % 0.270 V S-80854CNNB-B9F-T2 S-80854CNMC-B9F-T2 S-80854CNUA-B9F-T2 5.4 V±2.0 % 0.275 V S-80855CNNB-B9G-T2 S-80855CNMC-B9G-T2 S-80855CNUA-B9G-T2 5.5 V±2.0 % 0.280 V S-80856CNNB-B9H-T2 S-80856CNMC-B9H-T2 S-80856CNUA-B9H-T2 5.6 V±2.0 % 0.285 V S-80857CNNB-B9I-T2 S-80857CNMC-B9I-T2 S-80857CNUA-B9I-T2 5.7 V±2.0 % 0.290 V S-80858CNNB-B9J-T2 S-80858CNMC-B9J-T2 S-80858CNUA-B9J-T2 5.8 V±2.0 % 0.295 V S-80859CNNB-B9K-T2 S-80859CNMC-B9K-T2 S-80859CNUA-B9K-T2 5.9 V±2.0 % 0.300 V S-80860CNNB-B9L-T2 S-80860CNMC-B9L-T2 S-80860CNUA-B9L-T2 6.0 V±2.0 % *1. Describes the release voltage. *2. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *3. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Table 2 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.4 V typ. 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % 3.9 V±2.0 % 4.0 V±2.0 % 4.1 V±2.0 % 4.2 V±2.0 % 4.3 V±2.0 % 4.4 V±2.0 % 4.5 V±2.0 % 4.6 V±2.0 % 4.6 V±0.10 V 4.7 V±2.0 % 4.8 V±2.0 % 4.9 V±2.0 % 5.0 V±2.0 % 5.1 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 4.4 ± 0.1 V*2 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 0.225 V 0.230 V 0.10 V max. 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V SNT-4A S-80808CNPF-B9MTFG S-80809CNPF-B9NTFG S-80810CNPF-B9OTFG S-80811CNPF-B9PTFG S-80812CNPF-B9QTFG S-80813CNPF-B9RTFG S-80814CNPF-B9STFG S-80815CNPF-B8ATFG S-80816CNPF-B8BTFG S-80817CNPF-B8CTFG S-80818CNPF-B8DTFG S-80819CNPF-B8ETFG S-80820CNPF-B8FTFG S-80821CNPF-B8GTFG S-80822CNPF-B8HTFG S-80823CNPF-B8ITFG S-80824CNPF-B8JTFG S-80825CNPF-B8KTFG S-80826CNPF-B8LTFG S-80827CNPF-B8MTFG S-80828CNPF-B8NTFG S-80829CNPF-B8OTFG S-80830CNPF-B8PTFG S-80831CNPF-B8QTFG S-80832CNPF-B8RTFG S-80833CNPF-B8STFG S-80834CNPF-B8TTFG S-80835CNPF-B8UTFG S-80836CNPF-B8VTFG S-80837CNPF-B8WTFG S-80838CNPF-B8XTFG S-80839CNPF-B8YTFG S-80840CNPF-B8ZTFG S-80841CNPF-B82TFG S-80842CNPF-B83TFG S-80843CNPF-B84TFG S-80844CNPF-B85TFG S-80845CNPF-B86TFG S-80846CNPF-B87TFG S-80847CNPF-B88TFG S-80848CNPF-B89TFG S-80849CNPF-B9ATFG S-80850CNPF-B9BTFG S-80851CNPF-B9CTFG TO-92*1 S-80815CNY-x S-80816CNY-x S-80817CNY-x S-80818CNY-x S-80819CNY-x S-80820CNY-x S-80821CNY-x S-80822CNY-x S-80823CNY-x S-80824CNY-x S-80824KNY-x*3 S-80825CNY-x S-80826CNY-x S-80827CNY-x S-80828CNY-x S-80829CNY-x S-80830CNY-x S-80831CNY-x S-80832CNY-x S-80833CNY-x S-80834CNY-x S-80835CNY-x S-80836CNY-x S-80837CNY-x S-80838CNY-x S-80839CNY-x S-80840CNY-x S-80841CNY-x S-80842CNY-x S-80843CNY-x S-80844CNY-x S-80845CNY-x S-80846CNY-x S-80846KNY-x*4 S-80847CNY-x S-80848CNY-x S-80849CNY-x S-80850CNY-x S-80851CNY-x
Rev.3.2_00
6
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Table 2 (2/2)
Detection Hysteresis width SNT-4A TO-92*1 voltage range (Typ.) 0.260 V S-80852CNPF-B9DTFG S-80852CNY-x 5.2 V±2.0 % 0.265 V S-80853CNPF-B9ETFG S-80853CNY-x 5.3 V±2.0 % 0.270 V S-80854CNPF-B9FTFG S-80854CNY-x 5.4 V±2.0 % 0.275 V S-80855CNPF-B9GTFG S-80855CNY-x 5.5 V±2.0 % 0.280 V S-80856CNPF-B9HTFG S-80856CNY-x 5.6 V±2.0 % 0.285 V S-80857CNPF-B9ITFG S-80857CNY-x 5.7 V±2.0 % 0.290 V S-80858CNPF-B9JTFG S-80858CNY-x 5.8 V±2.0 % 0.295 V S-80859CNPF-B9KTFG S-80859CNY-x 5.9 V±2.0 % 0.300 V S-80860CNPF-B9LTFG S-80860CNY-x 6.0 V±2.0 % *1. x changes according to the packing form in TO-92. S: Bulk, F: Tape and reel, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics. *4. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics
Seiko Instruments Inc.
7
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2-2. CMOS Output Products Table 3 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % 3.9 V±2.0 % 4.0 V±2.0 % 4.1 V±2.0 % 4.2 V±2.0 % 4.3 V±2.0 % 4.4 V±2.0 % 4.45 V typ. 4.5 V±2.0 % 4.6 V±2.0 % 4.7 V±2.0 % 4.8 V±2.0 % 4.9 V±2.0 % 5.0 V±2.0 % 5.1 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 4.70 V max.*1 0.225 V 0.230 V 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V SC-82AB S-80808CLNB-B7M-T2 S-80809CLNB-B7N-T2 S-80810CLNB-B7O-T2 S-80811CLNB-B7P-T2 S-80812CLNB-B7Q-T2 S-80813CLNB-B7R-T2 S-80814CLNB-B7S-T2 S-80815CLNB-B6A-T2 S-80816CLNB-B6B-T2 S-80817CLNB-B6C-T2 S-80818CLNB-B6D-T2 S-80819CLNB-B6E-T2 S-80820CLNB-B6F-T2 S-80821CLNB-B6G-T2 S-80822CLNB-B6H-T2 S-80823CLNB-B6I-T2 S-80824CLNB-B6J-T2 S-80825CLNB-B6K-T2 S-80826CLNB-B6L-T2 S-80827CLNB-B6M-T2 S-80828CLNB-B6N-T2 S-80829CLNB-B6O-T2 S-80830CLNB-B6P-T2 S-80831CLNB-B6Q-T2 S-80832CLNB-B6R-T2 S-80833CLNB-B6S-T2 S-80834CLNB-B6T-T2 S-80835CLNB-B6U-T2 S-80836CLNB-B6V-T2 S-80837CLNB-B6W-T2 S-80838CLNB-B6X-T2 S-80839CLNB-B6Y-T2 S-80840CLNB-B6Z-T2 S-80841CLNB-B62-T2 S-80842CLNB-B63-T2 S-80843CLNB-B64-T2 S-80844CLNB-B65-T2 S-80845CLNB-B66-T2 S-80846CLNB-B67-T2 S-80847CLNB-B68-T2 S-80848CLNB-B69-T2 S-80849CLNB-B7A-T2 S-80850CLNB-B7B-T2 S-80851CLNB-B7C-T2 SOT-23-5 S-80815CLMC-B6A-T2 S-80816CLMC-B6B-T2 S-80817CLMC-B6C-T2 S-80818CLMC-B6D-T2 S-80819CLMC-B6E-T2 S-80820CLMC-B6F-T2 S-80821CLMC-B6G-T2 S-80822CLMC-B6H-T2 S-80823CLMC-B6I-T2 S-80824CLMC-B6J-T2 S-80825CLMC-B6K-T2 S-80826CLMC-B6L-T2 S-80827CLMC-B6M-T2 S-80828CLMC-B6N-T2 S-80829CLMC-B6O-T2 S-80830CLMC-B6P-T2 S-80831CLMC-B6Q-T2 S-80832CLMC-B6R-T2 S-80833CLMC-B6S-T2 S-80834CLMC-B6T-T2 S-80835CLMC-B6U-T2 S-80836CLMC-B6V-T2 S-80837CLMC-B6W-T2 S-80838CLMC-B6X-T2 S-80839CLMC-B6Y-T2 S-80840CLMC-B6Z-T2 S-80841CLMC-B62-T2 S-80842CLMC-B63-T2 S-80843CLMC-B64-T2 S-80844CLMC-B65-T2 S-80845CLMC-B66-T2 S-80846CLMC-B67-T2 S-80847CLMC-B68-T2 S-80848CLMC-B69-T2 S-80849CLMC-B7A-T2 S-80850CLMC-B7B-T2 S-80851CLMC-B7C-T2
Rev.3.2_00
SOT-89-3 S-80815CLUA-B6A-T2 S-80816CLUA-B6B-T2 S-80817CLUA-B6C-T2 S-80818CLUA-B6D-T2 S-80819CLUA-B6E-T2 S-80820CLUA-B6F-T2 S-80821CLUA-B6G-T2 S-80822CLUA-B6H-T2 S-80823CLUA-B6I-T2 S-80824CLUA-B6J-T2 S-80825CLUA-B6K-T2 S-80826CLUA-B6L-T2 S-80827CLUA-B6M-T2 S-80828CLUA-B6N-T2 S-80829CLUA-B6O-T2 S-80830CLUA-B6P-T2 S-80831CLUA-B6Q-T2 S-80832CLUA-B6R-T2 S-80833CLUA-B6S-T2 S-80834CLUA-B6T-T2 S-80835CLUA-B6U-T2 S-80836CLUA-B6V-T2 S-80837CLUA-B6W-T2 S-80838CLUA-B6X-T2 S-80839CLUA-B6Y-T2 S-80840CLUA-B6Z-T2 S-80841CLUA-B62-T2 S-80842CLUA-B63-T2 S-80843CLUA-B64-T2 S-80844CLUA-B65-T2 S-80844KLUA-D2A-T2*2 S-80845CLUA-B66-T2 S-80846CLUA-B67-T2 S-80847CLUA-B68-T2 S-80848CLUA-B69-T2 S-80849CLUA-B7A-T2 S-80850CLUA-B7B-T2 S-80851CLUA-B7C-T2
8
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Table 3 (2/2)
Detection Hysteresis width SC-82AB SOT-23-5 SOT-89-3 voltage range (Typ.) 0.260 V S-80852CLNB-B7D-T2 S-80852CLMC-B7D-T2 S-80852CLUA-B7D-T2 5.2 V±2.0 % 0.265 V S-80853CLNB-B7E-T2 S-80853CLMC-B7E-T2 S-80853CLUA-B7E-T2 5.3 V±2.0 % 0.270 V S-80854CLNB-B7F-T2 S-80854CLMC-B7F-T2 S-80854CLUA-B7F-T2 5.4 V±2.0 % 0.275 V S-80855CLNB-B7G-T2 S-80855CLMC-B7G-T2 S-80855CLUA-B7G-T2 5.5 V±2.0 % 0.280 V S-80856CLNB-B7H-T2 S-80856CLMC-B7H-T2 S-80856CLUA-B7H-T2 5.6 V±2.0 % 0.285 V S-80857CLNB-B7I-T2 S-80857CLMC-B7I-T2 S-80857CLUA-B7I-T2 5.7 V±2.0 % 0.290 V S-80858CLNB-B7J-T2 S-80858CLMC-B7J-T2 S-80858CLUA-B7J-T2 5.8 V±2.0 % 0.295 V S-80859CLNB-B7K-T2 S-80859CLMC-B7K-T2 S-80859CLUA-B7K-T2 5.9 V±2.0 % 0.300 V S-80860CLNB-B7L-T2 S-80860CLMC-B7L-T2 S-80860CLUA-B7L-T2 6.0 V±2.0 % *1. Describes the release voltage. *2. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics. Table 4 (1/2) Detection voltage range 0.8 V±2.0 % 0.9 V±2.0 % 1.0 V±2.0 % 1.1 V±2.0 % 1.2 V±2.0 % 1.3 V±2.0 % 1.4 V±2.0 % 1.5 V±2.0 % 1.6 V±2.0 % 1.7 V±2.0 % 1.8 V±2.0 % 1.9 V±2.0 % 2.0 V±2.0 % 2.1 V±2.0 % 2.2 V±2.0 % 2.3 V±2.0 % 2.4 V±2.0 % 2.5 V±2.0 % 2.6 V±2.0 % 2.7 V±2.0 % 2.8 V±2.0 % 2.9 V±2.0 % 3.0 V±2.0 % 3.1 V±2.0 % 3.2 V±2.0 % 3.3 V±2.0 % 3.4 V±2.0 % 3.5 V±2.0 % 3.6 V±2.0 % 3.7 V±2.0 % 3.8 V±2.0 % Hysteresis width (Typ.) 0.034 V 0.044 V 0.054 V 0.064 V 0.073 V 0.083 V 0.093 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V SNT-4A S-80808CLPF-B7MTFG S-80809CLPF-B7NTFG S-80810CLPF-B7OTFG S-80811CLPF-B7PTFG S-80812CLPF-B7QTFG S-80813CLPF-B7RTFG S-80814CLPF-B7STFG S-80815CLPF-B6ATFG S-80816CLPF-B6BTFG S-80817CLPF-B6CTFG S-80818CLPF-B6DTFG S-80819CLPF-B6ETFG S-80820CLPF-B6FTFG S-80821CLPF-B6GTFG S-80822CLPF-B6HTFG S-80823CLPF-B6ITFG S-80824CLPF-B6JTFG S-80825CLPF-B6KTFG S-80826CLPF-B6LTFG S-80827CLPF-B6MTFG S-80828CLPF-B6NTFG S-80829CLPF-B6OTFG S-80830CLPF-B6PTFG S-80831CLPF-B6QTFG S-80832CLPF-B6RTFG S-80833CLPF-B6STFG S-80834CLPF-B6TTFG S-80835CLPF-B6UTFG S-80836CLPF-B6VTFG S-80837CLPF-B6WTFG S-80838CLPF-B6XTFG TO-92*1 S-80815CLY-x S-80816CLY-x S-80817CLY-x S-80818CLY-x S-80819CLY-x S-80820CLY-x S-80821CLY-x S-80822CLY-x S-80823CLY-x S-80824CLY-x S-80825CLY-x S-80826CLY-x S-80827CLY-x S-80828CLY-x S-80829CLY-x S-80830CLY-x S-80831CLY-x S-80832CLY-x S-80833CLY-x S-80834CLY-x S-80835CLY-x S-80836CLY-x S-80837CLY-x S-80838CLY-x
Seiko Instruments Inc.
9
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Table 4 (2/2)
Rev.3.2_00
Detection Hysteresis width SNT-4A TO-92*2 voltage range (Typ.) 0.195 V S-80839CLPF-B6YTFG S-80839CLY-x 3.9 V±2.0 % 0.200 V S-80840CLPF-B6ZTFG S-80840CLY-x 4.0 V±2.0 % 0.205 V S-80841CLPF-B62TFG S-80841CLY-x 4.1 V±2.0 % 0.210 V S-80842CLPF-B63TFG S-80842CLY-x 4.2 V±2.0 % 0.215 V S-80843CLPF-B64TFG S-80843CLY-x 4.3 V±2.0 % 0.220 V S-80844CLPF-B65TFG S-80844CLY-x 4.4 V±2.0 % 4.45 V typ. 4.70 V max.*2 S-80844KLY-x*3 0.225 V S-80845CLPF-B66TFG S-80845CLY-x 4.5 V±2.0 % 0.230 V S-80846CLPF-B67TFG S-80846CLY-x 4.6 V±2.0 % 0.235 V S-80847CLPF-B68TFG S-80847CLY-x 4.7 V±2.0 % 0.240 V S-80848CLPF-B69TFG S-80848CLY-x 4.8 V±2.0 % 0.245 V S-80849CLPF-B7ATFG S-80849CLY-x 4.9 V±2.0 % 0.250 V S-80850CLPF-B7BTFG S-80850CLY-x 5.0 V±2.0 % 0.255 V S-80851CLPF-B7CTFG S-80851CLY-x 5.1 V±2.0 % 0.260 V S-80852CLPF-B7DTFG S-80852CLY-x 5.2 V±2.0 % 0.265 V S-80853CLPF-B7ETFG S-80853CLY-x 5.3 V±2.0 % 0.270 V S-80854CLPF-B7FTFG S-80854CLY-x 5.4 V±2.0 % 0.275 V S-80855CLPF-B7GTFG S-80855CLY-x 5.5 V±2.0 % 0.280 V S-80856CLPF-B7HTFG S-80856CLY-x 5.6 V±2.0 % 0.285 V S-80857CLPF-B7ITFG S-80857CLY-x 5.7 V±2.0 % 0.290 V S-80858CLPF-B7JTFG S-80858CLY-x 5.8 V±2.0 % 0.295 V S-80859CLPF-B7KTFG S-80859CLY-x 5.9 V±2.0 % 0.300 V S-80860CLPF-B7LTFG S-80860CLY-x 6.0 V±2.0 % *1. x changes according to the packing form in TO-92. S: Bulk, F: Tape and reel, Z: Tape and ammo *2. Describes the release voltage. *3. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
10
Seiko Instruments Inc.
Rev.3.2_00 Output Forms
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
1. Output Forms in S-808xxC Series Table 5 Nch open-drain output products (Active Low) “N” is the last letter of the product name. e.g. S-80815CN CMOS output products (Active Low) “L” is the last letter of the product name. e.g. S-80815CL
S-808xxC Series
2. Output form and their usage Table 6 Nch open-drain output products CMOS output products (Active Low) (Active Low) Different power supplies Yes No Active Low reset for CPUs Yes Yes Active High reset for CPUs No No Detection voltage change by resistor divider Yes No • Example for two power supplies
VDD1 VDD2
Usage
• Example for one power supply
VDD VDD
V/D Nch VSS
OUT
CPU
V/D
CMOS OUT
VSS
CPU
V/D Nch
OUT
CPU
VSS
Figure 3
Seiko Instruments Inc.
11
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Pin Configurations
SC-82AB Top view 4 3
Rev.3.2_00
Table 7
Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 NC*1 No connection 4 VSS GND pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS.
1
2
Figure 4
SOT-23-5 Top view 5 4
Table 8
1
2
3
Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin 4 NC*1 No connection 5 NC*1 No connection *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS.
Figure 5
SOT-89-3 Top view
Table 9
Pin No. 1 2 3
Pin name OUT VDD VSS
Pin description Voltage detection output pin Voltage input pin GND pin
1
2
3
Figure 6
SNT-4A Top view 1 2 4 3
Table10
Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VSS GND pin 3 NC*1 No connection 4 VDD Voltage input pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS.
Figure 7
12
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
TO-92 Bottom view 123
Table 11
Pin No. 1 2 3
Pin name OUT VDD VSS
Pin description Voltage detection output pin Voltage input pin GND pin
Figure 8
Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products Table 12
(Ta=25°C unless otherwise specified Absolute maximum ratings Unit 7 V Power supply voltage Output voltage Nch open-drain output products VSS−0.3 to VSS+7 CMOS output products VSS−0.3 to VDD+0.3 Output current IOUT 50 mA Power dissipation PD SC-82AB 150 mW SNT-4A 140 Operating ambient temperature Topr −40 to +85 °C Storage temperature Tstg −40 to +125 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Item Symbol VDD−VSS VOUT
2. Detection Voltage Typ. 1.5 V or More Products Table 13
(Ta=25°C unless otherwise specified Absolute maximum ratings Unit 12 V Power supply voltage Output voltage Nch open-drain output products VSS−0.3 to VSS+12 CMOS output products VSS−0.3 to VDD+0.3 Output current IOUT 50 mA Power dissipation PD SC-82AB 150 mW SOT-23-5 250 SOT-89-3 500 SNT-4A 140 TO-92 400 Operating ambient temperature Topr −40 to +85 °C Storage temperature Tstg −40 to +125 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Item Symbol VDD−VSS VOUT
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Electrical Characteristics
1. Nch Open-drain Output Products 1-1. Detection Voltage Typ.1.4 V or Less Products Table 14
Rev.3.2_00
Item Detection voltage*1 Release voltage
Symbol
−VDET +VDET
Condition
Hysteresis width
VHYS
Current consumption Operating voltage Output current Leakage current Response time
ISS VDD IOUT ILEAK tPLH
S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 S-80808 to 09 VDD=1.5 V S-80810 to 14 VDD=2.0 V Output transistor, Nch, VDS=0.5 V, VDD=0.7 V Output transistor, Nch, VDS=5.0 V, VDD=5.0 V
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 0.802 0.834 0.867 0.910 0.944 0.979 1.017 1.054 1.091 1.125 1.164 1.203 1.232 1.273 1.315 1.340 1.383 1.427 1.448 1.493 1.538 0.018 0.034 0.051 0.028 0.044 0.061 0.037 0.054 0.071 0.047 0.064 0.081 0.056 0.073 0.091 0.066 0.083 0.101 0.076 0.093 0.110 1.3 3.5 2 µA 1.3 3.5 0.65 5.0 V 1 0.04
0.2
mA nA
µs
3
60 60
1
Detection voltage ∆ − VDET temperature Ta=−40 °C to +85 °C ±100 ±350 ppm/°C ∆Ta • − VDET coefficient*2 *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
14
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
1-2. Detection Voltage Typ.1.5 V or More Products Table 15
Item Detection voltage*1 Hysteresis width Current consumption
Symbol −VDET VHYS ISS VDD=3.5 V VDD=4.5 V VDD=6.0 V VDD=7.5 V
Condition S-80815 to 26 S-80827 to 39 S-80840 to 56 S-80857 to 60
Operating voltage Output current
VDD IOUT
Leakage current
ILEAK
Response time tPLH 60 1 µs Detection voltage ∆ − VDET ppm/ temperature Ta=−40 °C to +85 °C ±100 ±350 °C *2 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
Output transistor, VDD=1.2 V Nch, VDS=0.5 V S-80815 to 60 VDD=2.4 V S-80827 to 60 Output transistor, Nch, VDS=10.0 V, VDD=10.0 V
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 −VDET −VDET −VDET ×0.03 ×0.05 ×0.08 0.8 2.4 2 µA 0.8 2.4 0.9 2.7 0.9 2.7 0.95 10.0 V 1 0.59 2.88 1.36 4.98 100 nA mA 3
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2. CMOS Output Products 2-1. Detection Voltage Typ.1.4 V or Less Products Table 16
Rev.3.2_00
Item Detection voltage*1 Release voltage
Symbol −VDET +VDET
Condition S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 S-80808 S-80809 S-80810 S-80811 S-80812 S-80813 S-80814 S-80808 to 09 VDD=1.5 V S-80810 to 14 VDD=2.0 V Output transistor, Nch, VDS=0.5 V, VDD=0.7 V Output transistor, Pch, VDS=2.1 V, VDD=4.5 V
Hysteresis width
VHYS
Current consumption Operating voltage Output current
ISS VDD IOUT
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 0.802 0.834 0.867 0.910 0.944 0.979 1.017 1.054 1.091 1.125 1.164 1.203 1.232 1.273 1.315 1.340 1.383 1.427 1.448 1.493 1.538 0.018 0.034 0.051 0.028 0.044 0.061 0.037 0.054 0.071 0.047 0.064 0.081 0.056 0.073 0.091 0.066 0.083 0.101 0.076 0.093 0.110 1.3 3.5 2 µA 1.3 3.5 0.65 5.0 V 1 0.04 2.9 0.2 5.8 mA 3 4
Response time tPLH 60 1 µs Detection voltage ∆ − VDET temperature Ta=−40 °C to +85 °C ±100 ±350 ppm/°C ∆Ta • − VDET coefficient*2 *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 3 to 4.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
16
Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2-2. Detection Voltage Typ.1.5 V or More Products Table 17
Item Detection voltage*1 Hysteresis width Current consumption
Symbol −VDET VHYS ISS VDD=3.5 V VDD=4.5 V VDD=6.0 V VDD=7.5 V
Condition S-80815 to 26 S-80827 to 39 S-80840 to 56 S-80857 to 60 Output transistor, VDD=1.2 V Nch, VDS=0.5 V S-80815 to 60 VDD=2.4 V S-80827 to 60 Output transistor, VDD=4.8 V Pch, VDS=0.5 V S-80815 to 39 VDD=6.0 V S-80840 to 56 VDD=8.4 V S-80857 to 60
Operating voltage Output current
VDD IOUT
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit −VDET(S) −VDET(S) −VDET(S) V 1 ×0.98 ×1.02 −VDET −VDET −VDET ×0.03 ×0.05 ×0.08 0.8 2.4 2 µA 0.8 2.4 0.9 2.7 0.9 2.7 0.95 10.0 V 1 mA 3 0.59 1.36 2.88 1.43 1.68 2.08 4.98 2.39 2.78 3.42 4
Response time tPLH 60 1 µs Detection voltage ∆ − VDET ppm/ temperature Ta=−40 °C to +85 °C ±100 ±350 °C *2 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 3 to 4.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
Seiko Instruments Inc.
17
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Test Circuits
1.
VDD VDD V S-808xxC Series V VSS OUT R 100 kΩ
*1
Rev.3.2_00
*1. R is unnecessary for CMOS output products. Figure 9
2.
A VDD VDD S-808xxC Series VSS OUT
Figure 10
3.
VDD VDD V S-808xxC Series VSS V OUT A VDS
Figure 11
4.
VDS VDD VDD V S-808xxC Series VSS V OUT A
Figure 12
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Seiko Instruments Inc.
Rev.3.2_00 Timing Chart
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
1. Nch Open-drain Output Products
VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS R 100 kΩ
Hysteresis width (VHYS)
VDD OUT VSS
VDD Output from the OUT pin VSS
V
Figure 13 2. CMOS Output Products
VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS
Hysteresis width (VHYS)
VDD OUT VSS
VDD Output from the OUT pin VSS
V
Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region. Figure 14
Seiko Instruments Inc.
19
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Operation
1. Basic Operation: CMOS Output (Active Low)
Rev.3.2_00
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in (RB + RC) • VDD Figure 15 is OFF, the comparator input voltage is . RA + RB + RC 1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 16), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 15 becomes ON, the comparator input voltage is changed to RB • VDD . RA + RB 1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD. 1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET. 1-5. When the VDD rises above +VDET (point B in Figure 16), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD level at the output.
VDD
*1
*1
RA RB VREF RC
− +
Pch
*1
OUT
Nch N1
VSS
*1. Parasiteic diode Figure 15 Operation 1
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
(1) Hysteresis width (VHYS)
(2) (3) A
(4) B
(5) VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS
VDD Output from the OUT pin VSS
Figure 16 Operation 2 2. Other Characteristics 2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 17 shows the temperature characteristics of the detection voltage.
−VDET [V] +0.945 mV/°C
−VDET25
*1
−0.945 mV/°C −40 25 85 Ta [°C]
*1. −VDET25 is an actual detection voltage value at 25°C. Figure 17 Temperature Characteristics of Detection Voltage (Example for S-80827C) 2-2. Temperature Characteristics of Release Voltage
The temperature coefficient
∆ + VDET for the release voltage is calculated by the temperature coefficient ∆Ta
∆ − VDET of the detection voltage as follows: ∆Ta ∆ + VDET + VDET ∆ − VDET × = ∆Ta − VDET ∆Ta The temperature coefficients for the release voltage and the detection voltage have the same sign consequently.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2-3. Temperature Characteristics of Hysteresis Voltage
Rev.3.2_00
The temperature characteristics for the hysteresis voltage is expressed as calculated as follows: ∆ + VDET ∆ − VDET VHYS ∆ − VDET − = × ∆Ta ∆Ta − VDET ∆Ta
∆ + VDET ∆ − VDET − and is ∆Ta ∆Ta
Standard Circuit
R* 100 kΩ OUT VSS
1
VDD
*1. R is unnecessary for CMOS output products. Figure 18 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.
Technical Terms
1. Detection Voltage (−VDET), Release Voltage (+VDET)
The detection voltage (−VDET) is a voltage at which the output turns to low. The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 19). Example: For the S-80815CN, the detection voltage lies in the range of 1.470≤(−VDET)≤1.530. This means that some S-80815CNs have 1.470 V for −VDET and some have 1.530 V. The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 20). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by −VDET×1.03≤+VDET≤−VDET ×1.08. Example: For the S-80815CN, the release voltage lies in the range of 1.514≤(+VDET)≤1.652. This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V.
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
VDD (− VDET) Max. (− VDET) Min.
Detection voltage Detection voltage range
Release voltage (+ VDET) Max. (+ VDET) Min.
VDD Release voltage range
OUT
OUT
Figure 19 Detection Voltage (CMOS Output Products)
Figure 20 Release Voltage (CMOS Output Products)
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V, +VDET is always larger than −VDET. 2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B −The voltage at point A =VHYS in Figure 16). The existence of the hysteresis width prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 13), taking a CMOS active low product for example, the through-type current which is generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from low to high. A through-type current is again generated, a voltage drop appears, and repeating the process finally induces oscillation.
VDD RA VIN S-808xxCL OUT
RB VSS
Figure 21 An Example for Bad Implementation of Input Voltage Divider
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series Electrical Characteristics for Customized Products
1. S-80824KNUA-D2B-T2, S-80824KNY-x Table 18
Rev.3.2_00
Item Detection voltage Release voltage Current consumption Operating voltage Output current Leakage current
*1
Symbol −VDET +VDET ISS VDD IOUT ILEAK
Response time tPLH Detection voltage ∆ − VDET temperature Ta=−40°C to 85°C ±100 ±350 ppm/°C *3 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
(Ta=25°C unless otherwise specified) Test Condition Min. Typ. Max. Unit circuit V 1 2.295 2.400*2 2.505 4.300 4.400 4.500 0.8 2.4 2 VDD=6.0 V µA 0.95 10.0 V 1 Output transistor, VDD=0.95 V 0.03 0.24 mA 3 Nch, VDS=0.5 V 0.50 VDD=1.2 V 0.23 Output transistor, 0.1 µA Nch, VDD=10.0 V, VDS=10.0 V 60 1 µs
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2. S-80844KLUA-D2A-T2, S-80844KLY-x Table 19
Item Detection voltage Release voltage Current consumption Operating voltage Output current
*1
Symbol −VDET +VDET ISS VDD IOUT
Condition VDD=6.0 V Output transistor, VDD=1.2 V Nch, VDS=0.5 V VDD=2.4 V Output transistor, VDD=4.8 V Pch, VDS=0.5 V
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit 4.295 4.450*2 4.605 V 1 4.700 1.0 3.0 2 µA 0.95 10.0 V 1 0.23 0.50 mA 3 1.60 3.70 0.36 0.62 4
Response time tPLH 60 1 µs Detection voltage ∆ − VDET temperature Ta=−40°C to 85°C ±100 ±350 ppm/°C *3 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
3. S-80846KNUA-D2C-T2, S-80846KNY-x Table 20
Rev.3.2_00
Item Detection voltage Hysteresis width Current consumption Operating voltage Output current Leakage current
*1
Symbol −VDET VHYS ISS VDD IOUT ILEAK
Condition VDD=6.0 V Output transistor, VDD=1.2 V Nch, VDS=0.5 V VDD=2.4 V Output transistor, Nch, VDD=10.0 V, VDS=10.0 V
(Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit *2 4.500 4.600 4.700 V 1 0.05 0.10 0.9 2.7 2 µA 0.95 10.0 V 1 0.59 1.36 mA 3 2.88 4.98 0.1 µA
Response time tPLH 60 1 µs Detection voltage ∆ − VDET temperature Ta=−40°C to 85°C ±100 ±350 ppm/°C *3 ∆Ta • − VDET coefficient *1. −VDET: Actual detection voltage value *2. Specified detection voltage value (−VDET(S)) *3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. ∆ − VDET [mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × ∆ − VDET [ppm/ °C]*3 ÷ 1000 ∆Ta ∆Ta • − VDET *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient
Precautions
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during releasing. • In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage. • When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the products on the circuits described herein. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party.
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80808CL
0.90
S-80814CL
1.55 1.50
+VDET
VDET (V)
VDET (V)
0.85
+VDET
1.45 1.40 1.35 1.30 1.25 -40 -20 0 20 40 60 80
0.80
-VDET
-VDET
0.75 -40 -20 0
Ta (°C)
20
40
60
80
Ta (°C)
S-80815CL
1.60
S-80860CL
6.40 6.30
+VDET VDET (V)
VDET (V)
1.55
+VDET
6.20 6.10 6.00 5.90 5.80 -40 -20 0
1.50
-VDET
1.45 -40 -20 0
-VDET
Ta (°C)
20
40
60
80
Ta (°C)
20
40
60
80
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80808CL 8.0
7.0
S-80814CL
8.0 7.0
V HYS (%)
5.0 4.0 3.0 -40
VHYS (%)
-20 0 20 40 Ta (°C) 60 80
6.0
6.0 5.0 4.0 3.0 -40 -20 0 20 40 60 80
Ta (°C)
S-80815CL 8.0
S-80860CL
8.0 7.0
7.0
V HYS (%)
VHYS (%)
-20 0 20 40 Ta (°C) 60 80
6.0 5.0 4.0 3.0 -40
6.0 5.0 4.0 3.0 -40 -20 0
Ta (°C)
20
40
60
80
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
3. Current Consumption (ISS) - Input Voltage (VDD)
S-80808CL
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 9.3 µA
Rev.3.2_00
Ta=25°C
S-80814CL
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1.0 21.5 µA
Ta=25°C
ISS (µA)
1.0
2.0
3.0
4.0
5.0
6.0
ISS (µA)
2.0
3.0
4.0
5.0
6.0
VDD (V)
VDD (V)
S-80815CL
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 4.7 µA
Ta=25°C
S-80860CL
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2.0 4.0 6.0 12.8 µA
Ta=25°C
ISS (µA)
ISS (µA)
2.0
4.0
6.0
8.0
10.0
12.0
VDD (V)
VDD (V)
8.0
10.0
12.0
4. Current Consumption (ISS) - Temperature (Ta)
S-80808CL
2.0 1.5
VDD=1.5 V
S-80814CL
2.0 1.5
VDD=2.0 V
ISS (µA)
1.0 0.5 0.0 -40 -20 0 20 40 60 80
ISS (µA)
1.0 0.5 0.0
Ta (°C) S-80815CL
2.0 1.5
-40
-20
0
Ta (°C)
20
40
60
80
VDD=3.5 V
S-80860CL
2.0 1.5
VDD=7.5 V
ISS (µA)
1.0 0.5 0.0 -40 -20 0 20 40 60 80
ISS (µA)
1.0 0.5 0.0 -40 -20 0
Ta (°C)
Ta (°C)
20
40
60
80
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
5. Nch Transistor Output Current (IOUT) – VDS
S-80814CL/CN 5.0 4.0 IOUT (mA) 3.0 2.0 1.0 0 0 0.5 1.0 1.5 VDS (V) 2.0 2.5 VDD=1.0 VDD=0.7 V Ta=25°C VDD=1.3 V
IOUT (mA) S-80860CL/CN 50 40 30 20 10 0 0 1.0 2.4 V VDD=1.2 V 2.0 3.0 VDS (V) 4.0 5.0 3.6 V Ta=25°C 6.0 V 4.8 V
6. Pch Transistor Output Current (IOUT) -VDS
S-80808CL 5.0 4.0 IOUT (mA) 3.0 2.0 1.0 0 0 0.5 VDD=0.9 V Ta=25ºC VDD=2.9V VDD=2.4V VDD=1.9 V VDD=1.4 V 2.0 2.5
IOUT (mA) S-80815CL 30 25 20 15 10 5 0 0 2.0 6.0 V 4.8 V 3.6 V VDD=2.4 V 4.0 6.0 VDS (V) 8.0 10.0 Ta=25ºC 8.4 V 7.2 V
1.0 1.5 VDS (V)
7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80814CL/CN 6.0 Ta=-40°C 4.5 IOUT (mA) 3.0 1.5 Ta=85° 0 0 0.5 1.0 VDD (V) 1.5 2.0 VDS=0.5 V
S-80860CL/CN 20 Ta=-40°C 15 IOUT (mA) Ta=25°C 10 5 0 0 2.0 4.0 VDD (V)
VDS=0.5 V
Ta=25°C
Ta=85°C 6.0 8.0
8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80808CL
3.0 2.5
VDS=0.5 V Ta=-40°C
S-80815CL
6 5
VDS=0.5 V Ta=-40°C Ta=25°C
IOUT (mA)
1.5 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 6.0
IOUT (mA)
2.0
Ta=25°C
4 3 2 1 0 0
Ta=85°C
Ta=85°C
VDD (V)
2.0
4.0
6.0
8.0
10.0
12.0
VDD (V)
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
9. Minimum Operating Voltage - Input Voltage (VDD)
S-80808CN
1.2 0.9 Ta=-40°C
Rev.3.2_00
Pull-up to VDD 100 kΩ
S-80808CN
4.0 3.0 Ta=-40°C
Pull-up to 3 V
VOUT (V)
0.6 Ta=25°C 0.3 0.0 0.0 0.2 0.4 0.6 0.8 1.0 Ta=85°C
VOUT (V)
Ta=25°C 2.0 Ta=85°C 1.0 0.0 0.2 0.4
VDD (V)
S-80815CN
2.0 1.5 1.0 0.5 0.0 0 0.5
VDD (V)
0.6
0.8
1.0
Pull-up to VDD 100 kΩ
S-80815CN
4.0 3.0 Ta=-40°C
Pull-up to 3 V
VOUT (V)
VOUT (V)
Ta=-40°C Ta=25°C Ta=85°C 1.0 1.5 2.0
Ta=25°C 2.0 Ta=85°C 1.0 0.0 0 0.5
VDD (V)
VDD (V)
1.0
1.5
2.0
S-80808CN
0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30
Pull-up to VDD:100 kΩ Ta=-40°C
VOUT(V) PULL-UP
VDDmin (V)
PULL-UP×0.1
Ta=25°C Ta=85°C
0 VDDmin
VDD(V)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PULL-UP (V)
Remark VDDmin. is defined by the VDD voltage at which VOUT goes below 10 % of PULL-UP voltage when the VDD increase from 0 V. Figure 22
S-80815CN
0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 Ta=-40°C
Pull-up to VDD:100 kΩ
VDDmin (V)
Ta=85°C Ta=25°C
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
PULL-UP (V)
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
10. Dynamic Response - COUT
S-80808CL
1
Ta=25°C
tpHL
S-80808CN
100
Ta=25°C
tpLH
Response time (ms)
Resopnse time (ms)
10 1 0.1
0.1
0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1
tpHL 0.01 0.001 0.00001
Load capacitance (µF)
0.0001
Load capacitance (µF)
0.001
0.01
0.1
S-80814CL
1
Ta=25°C
tpHL
S-80814CN
100
Ta=25°C
tpLH
Response time (ms)
Response time (ms)
10 1 0.1
0.1
0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1
tpHL 0.01 0.001 0.00001
Load capacitanse (µF) S-80815CL
1
0.0001
Load Capacitance (µF)
0.001
0.01
0.1
Ta=25°C
tpHL
S-80815CN
100
Ta=25°C
tpLH
Response time (ms)
Response time (ms)
10 1 0.1
0.1
0.01 tpLH 0.001 0.00001 0.0001 0.001 0.01 0.1
tpHL 0.01 0.001 0.00001
Load Capacitance (µF)
S-80860CL
1
0.0001
Load Capacitance (µF)
0.001
0.01
0.1
Ta=25°C
tpHL
S-80860CN
100 tpLH
Ta=25°C
Response time (ms)
0.1
Respone time (ms)
10 1 0.1 0.01 0.001 0.00001
0.01 tpLH 0.001 0.00001
tpHL
0.0001
0.001
0.01
0.1
Load Capacitance (µF)
0.0001
Load Capacitance (µF)
0.001
0.01
0.1
Seiko Instruments Inc.
31
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Rev.3.2_00
1 µs VIH Input voltagae VIL VDD Output voltage VDD×10 % tpHL
1 µs
VDD V VDD S-808xxC OUT Series COUT VSS
R 100 kΩ
*1
tpLH VDD×90 %
V
*1. R is unnecessary for CMOS output products.
VIH=10 V, VIL=0.95 V
Figure 23 Measurement Condition for Response Time Figure 24 Measurement Circuit for Response Time
Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.
Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 25 to 26 can be easily constructed with the help of the S-808xxC series, that has low operating voltage, a high-precision detection voltage and hysteresis.
VDD1
VDD S808xxCL
VDD2
S808xxCN
Microcomputer VSS
Microcomputer
VSS (Only for Nch open-drain products)
Figure 25 Reset Circuit Example(S-808xxCL)
Figure 26 Reset Circuit Example (S-808xxCN)
Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.
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Seiko Instruments Inc.
Rev.3.2_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
2. Power-on Reset Circuit
A power-on reset circuit can be constructed using Nch open-drain output product of S-808××C Series.
VDD R (R≤75 kΩ) C VSS
*1
Di VIN
*2
S808xxCN
OUT
( Nch open-drain products)
*1. Resistor R should be 75 kΩ or less to prevent oscillation. *2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling,Di can be removed when the delay of the falling time is not important. Figure 27
VDD (V)
OUT (V)
t (s)
t (s)
Figure 28 Remark When the power rises sharply as shown in the Figure 29 left, the output may goes to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage.
VDD (V)
OUT (V)
t (s)
t (s)
Figure 29
Seiko Instruments Inc.
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
3. Change of Detection Voltage
Rev.3.2_00
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 30 to 31. In Figure 30, hysteresis width also changes.
VDD RA
*1
VDD Vf1
VIN
+ −
(RA≤75 kΩ)
S808xxCN
Vf2
OUT
VIN
S808xxCN
OUT
RB VSS
(Nch open-drain output products)
(Nch open-drain output product) VSS
Detection voltagae =
RA + RB • − VDET RB RA + RB Hysterisis width = • VHYS RB
Detection voltage=Vf1+Vf2+(−VDET)
*1. RA should be 75 kΩ or less to prevent oscillation. Caution If RA and RB are large, the hysteresis width may aloso be larger than the value given by the above equation due to the through-type current (which flows slightly in an Nch open-drain product). Figure 30 Figure 31
Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants.
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Seiko Instruments Inc.
2.0±0.2
4
1.3±0.2
3
0.05
1 2
0.16
+0.1 -0.06
0.3
+0.1 -0.05
0.4
+0.1 -0.05
No. NP004-A-P-SD-1.1
TITLE No. SCALE UNIT
SC82AB-A-PKG Dimensions NP004-A-P-SD-1.1
mm
Seiko Instruments Inc.
1.5
+0.1 -0.05
4.0±0.1
2.0±0.05
4.0±0.1
1.1±0.1 0.2±0.05
1.05±0.1 (0.7)
2.2±0.2
Feed direction
No. NP004-A-C-SD-2.1
TITLE No. SCALE UNIT
SC82AB-A-Carrier Tape NP004-A-C-SD-2.1
mm
Seiko Instruments Inc.
12.5max.
Enlarged drawing in the central part ø13±0.2
9.0±0.3
(60°)
(60°)
No. NP004-A-R-SD-1.1
TITLE No. SCALE UNIT mm
SC82AB-A-Reel NP004-A-R-SD-1.1
QTY. 3,000
Seiko Instruments Inc.
2.9±0.2 1.9±0.2
5 4
1
2
3
0.16 -0.06
+0.1
0.95±0.1 0.4±0.1
No. MP005-A-P-SD-1.2
TITLE No. SCALE UNIT
SOT235-A-PKG Dimensions MP005-A-P-SD-1.2
mm
Seiko Instruments Inc.
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
2.0±0.05
0.25±0.1
ø1.0 -0
+0.2
4.0±0.1 1.4±0.2
3.2±0.2
321
4
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE No. SCALE UNIT
SOT235-A-Carrier Tape MP005-A-C-SD-2.1
mm
Seiko Instruments Inc.
12.5max.
Enlarged drawing in the central part ø13±0.2
9.0±0.3
(60°)
(60°)
No. MP005-A-R-SD-1.1
TITLE No. SCALE UNIT mm
SOT235-A-Reel MP005-A-R-SD-1.1
QTY. 3,000
Seiko Instruments Inc.
4.5±0.1 1.6±0.2
1.5±0.1
1
2
3
1.5±0.1 1.5±0.1
0.4±0.05
45°
0.4±0.1 0.45±0.1
0.4±0.1
No. UP003-A-P-SD-1.1
TITLE No. SCALE UNIT
SOT893-A-PKG Dimensions UP003-A-P-SD-1.1
mm
Seiko Instruments Inc.
ø1.5 -0
+0.1
4.0±0.1(10 pitches : 40.0±0.2)
2.0±0.05
ø1.5 +0.1 -0 5° max. 8.0±0.1 0.3±0.05 2.0±0.1
4.75±0.1
Feed direction
No. UP003-A-C-SD-1.1
TITLE No. SCALE UNIT
SOT893-A-Carrier Tape UP003-A-C-SD-1.1
mm
Seiko Instruments Inc.
16.5max.
Enlarged drawing in the central part
13.0±0.3
(60°)
(60°)
No. UP003-A-R-SD-1.1
TITLE No. SCALE UNIT mm
SOT893-A-Reel UP003-A-R-SD-1.1
QTY. 1,000
Seiko Instruments Inc.
1.2±0.04
+0.05 0.08 -0.02 0.65 0.48±0.02
0.2±0.05
No. PF004-A-P-SD-3.0
TITLE No. SCALE UNIT
SNT-4A-A-PKG Dimensions PF004-A-P-SD-3.0
mm
Seiko Instruments Inc.
ø1.5 -0
+0.1
2.0±0.05
4.0±0.1
0.25±0.05
5°
1.45±0.1
ø0.5 -0
+0.1
4.0±0.1
0.65±0.05
TF type
2 1
3
4
Feed direction
No. PF004-A-C-SD-1.0
TITLE No. SCALE UNIT
SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0
mm
Seiko Instruments Inc.
12.5max.
Enlarged drawing in the central part ø13±0.2
9.0±0.3
(60°)
(60°)
No. PF004-A-R-SD-1.0
TITLE No. SCALE UNIT mm
SNT-4A-A-Reel PF004-A-R-SD-1.0
QTY. 5,000
Seiko Instruments Inc.
5.2max.
4.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
1.27
No. YS003-B-P-SD-1.1
TITLE No. SCALE UNIT
TO92-B-PKG Dimensions YS003-B-P-SD-1.1
mm
Seiko Instruments Inc.
5.2max.
4.2max.
Marked side
0.6max.
0.45±0.1 0.45±0.1
+0.4
2.5 -0.1
1.27
No. YF003-A-P-SD-1.1
TITLE No. SCALE UNIT
TO92-A-PKG Dimensions YF003-A-P-SD-1.1
mm
Seiko Instruments Inc.
1.0max.
12.7±1.0 Marked side
1.0max.
0.5max.
1#pin
3#pin 1.45max. 0.7±0.2
6.35±0.4
ø4.0±0.2
12.7±0.3(20 pitches : 254.0±1.0)
Feed direction
Marked side
Feed direction
No. YF003-A-C-SD-4.1
TITLE No. SCALE UNIT
TO92-A-Radial Tape YF003-A-C-SD-4.1
mm
Seiko Instruments Inc.
2±0.5
5±0.5 ø358±2 43±0.5 53±0.5
No. YF003-A-R-SD-2.1
TITLE No. SCALE UNIT mm
TO92-A-Reel YF003-A-R-SD-2.1
QTY. 2,000
Seiko Instruments Inc.
5.2max.
4.2max.
Marked side
0.6max.
0.45±0.1 0.45±0.1
+0.4
2.5 -0.1
1.27
No. YF003-A-P-SD-1.1
TITLE No. SCALE UNIT
TO92-A-PKG Dimensions YF003-A-P-SD-1.1
mm
Seiko Instruments Inc.
1.0max.
12.7±1.0 Marked side
1.0max.
0.5max.
1#pin
3#pin 1.45max. 0.7±0.2
6.35±0.4
ø4.0±0.2
12.7±0.3(20 pitches : 254.0±1.0)
Feed direction
No. YZ003-C-C-SD-3.1
TITLE No. SCALE UNIT
TO92-C-Radial Tape YZ003-C-C-SD-3.1
mm
Seiko Instruments Inc.
Spacer 60 320 40
Side spacer placed in front side
165
320
Space more than 4 strokes
262
330
47
No. YZ003-C-Z-SD-2.1
TITLE No. SCALE UNIT
TO92-C-Ammo Packing YZ003-C-Z-SD-2.1
QTY. 2,500
mm
Seiko Instruments Inc.
• • • • • •
The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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