S-816A53AMC-BBCT2G

Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and shutdown function. A low drop-out type regulator with an output current ranging from several hundreds of mA to 1 A can be configured with the PNP transistor driven by this IC. Despite the features of the S-816, which is low current consumption, the improvement in its transient response characteristics of the IC with a newly deviced phase compensation circuit made it possible to employ the products of the S-816 Series even in applications where heavy input variation or load variation is experienced. The S-816 Series regulators serve as ideal power supply units for portable devices when coupled with the SOT-23-5 minipackage, providing numerous outstanding features, including low current consumption. Since this series can accommodate an input voltage of up to 16 V, it is also suitable when operating via an AC adapter. Features (1) Low current consumption • Operation mode: 30 µA typ., 40 µA max. • Shutdown mode: 1 µA max. (2) Input voltage range: 16 V max. (3) Output voltage accuracy: ± 2.0% (4) Output voltage range: Selectable between 2.5 V and 6.0 V in steps of 0.1 V. (5) With shutdown function. (6) A built-in current source (10 µA) eliminates the need of a base-emitter resistance. (7) With overcurrent (base current) protection function. (8) Lead-free products Applications • Power supplies for on-board such as battery devices for portable telephones, electronic notebooks, PDAs. • Constant voltage power supplies for cameras, video equipment and portable communications equipment. • Power Supplies for CPUs. • Post-Regulators for Switching Regulators. • Main Regulators in Multiple-Power Supply Systems. Package Package Name SOT-23-5 Package MP005-A Drawing Code Tape MP005-A Reel MP005-A Seiko Instruments Inc. 1 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Block Diagram Rev.5.1_00 VIN EXT VOUT Current Source Pull-Up Overcurrent Protection Circuit + − + VREF ON/ OFF − Error Amplifier + − Sink Driver VSS Remark 1. To ensure you power cutoff of the external transistor when the device is powered down, the EXT output is pulled up to VIN by a pull-up resistance (approx. 0.5 MΩ) inside the IC. 2. The diode inside the IC is a parasitic diode. Figure 1 2 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Product Code Structure 1. Product Name S-816A xx A MC xxx T2 G IC direction in tape specifications Product name (abbreviation) Package name (abbreviation) MC: SOT-23-5 Output voltage × 10 25 to 60 (2.5 V to 6.0 V) 2. Product Name List Table 1 Output Voltage Product Name (V) S-816A25AMC-BAAT2G 4.3 V±2.0% S-816A26AMC-BABT2G 4.4 V±2.0% S-816A27AMC-BACT2G 4.5 V±2.0% S-816A28AMC-BADT2G 4.6 V±2.0% S-816A29AMC-BAET2G 4.7 V±2.0% S-816A30AMC-BAFT2G 4.8 V±2.0% S-816A31AMC-BAGT2G 4.9 V±2.0% S-816A32AMC-BAHT2G 5.0 V±2.0% S-816A33AMC-BAIT2G 5.1 V±2.0% S-816A34AMC-BAJT2G 5.2 V±2.0% S-816A35AMC-BAKT2G 5.3 V±2.0% S-816A36AMC-BALT2G 5.4 V±2.0% S-816A37AMC-BAMT2G 5.5 V±2.0% S-816A38AMC-BANT2G 5.6 V±2.0% S-816A39AMC-BAOT2G 5.7 V±2.0% S-816A40AMC-BAPT2G 5.8 V±2.0% S-816A41AMC-BAQT2G 5.9 V±2.0% S-816A42AMC-BART2G 6.0 V±2.0% Output Voltage (V) 2.5 V±2.0% 2.6 V±2.0% 2.7 V±2.0% 2.8 V±2.0% 2.9 V±2.0% 3.0 V±2.0% 3.1 V±2.0% 3.2 V±2.0% 3.3 V±2.0% 3.4 V±2.0% 3.5 V±2.0% 3.6 V±2.0% 3.7 V±2.0% 3.8 V±2.0% 3.9 V±2.0% 4.0 V±2.0% 4.1 V±2.0% 4.2 V±2.0% Product Name S-816A43AMC-BAST2G S-816A44AMC-BATT2G S-816A45AMC-BAUT2G S-816A46AMC-BAVT2G S-816A47AMC-BAWT2G S-816A48AMC-BAXT2G S-816A49AMC-BAYT2G S-816A50AMC-BAZT2G S-816A51AMC-BBAT2G S-816A52AMC-BBBT2G S-816A53AMC-BBCT2G S-816A54AMC-BBDT2G S-816A55AMC-BBET2G S-816A56AMC-BBFT2G S-816A57AMC-BBGT2G S-816A58AMC-BBHT2G S-816A59AMC-BBIT2G S-816A60AMC-BBJT2G Seiko Instruments Inc. 3 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Pin Configuration SOT-23-5 Top view Rev.5.1_00 Table 2 5 4 Pin No. 1 2 3 4 5 Symbol EXT VSS ON/ OFF VIN VOUT Description Output Pin for Base-Current Control GND Pin Shutdown Pin ("H" active) IC Power Supply Pin Output Voltage Monitoring Pin 1 2 3 Figure 2 4 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Absolute Maximum Ratings Table 3 Item VIN Pin Voltage VOUT Pin Voltage ON/ OFF Pin Voltage EXT Pin Voltage EXT Pin Current Power Dissipation Symbol VIN VOUT VON/OFF VEXT IEXT PD (Ta=25°C unless otherwise specified) Absolute Maximum Ratings Unit V VSS−0.3 to VSS+18 V VSS−0.3 to VSS+18 VSS−0.3 to VSS+18 VSS−0.3 to VIN+0.3 50 250 (When not mounted on board) 600*1 −40 to +85 −40 to +125 V V mA mW mW °C °C Operating Ambient Temperature Topr Storage Temperature Tstg *1. When mounted on board [Mounted on board] (1) Board size : 114.3 mm × 76.2 mm × t1.6 mm (2) Board name : JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. (1) When mounted on board Power Dissi pation (PD) [ mW] 700 (2) When not mounted on board Power Dissi pation (P D) [ mW] 300 250 600 500 400 300 200 150 200 100 100 50 0 0 100 150 50 Ambient Temperature (Ta) [°C] 0 0 100 150 50 Ambient Temperature (Ta) [°C] Figure 3 Power Dissipation of Package Seiko Instruments Inc. 5 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Electrical Characteristics Table 4 Item Input Voltage Output Voltage Maximum Output Current (PNP Output) *1 Drop-Out Voltage *1 Load Regulation (PNP Output) *1 Line Regulation (PNP Output) *1 Output Voltage Temperature Coefficient Current Consumption during Operation Current Consumption during Shutdown EXT Output Source Constant Current EXT Output Pull-Up Resistance EXT Output Sink Current Leakage Current during EXT Output Off EXT Output Sink Overcurrent Set Value Shutdown Pin Input Voltage Symbol VIN VOUT  ∆Vdrop ∆VOUT ∆VOUT VOUT • ∆VIN ∆VOUT ∆Ta ISS ISTB ISRC RUP ISINK IOFF IMAX VSH VSL Shutdown Pin Input Current *1. ISH ISL Conditions  VIN =VOUT +1 V, IOUT =50 mA, VON/OFF ="H"  IOUT =100 mA VIN =VOUT +1 V, 1 mA < IOUT < 1 A IOUT =50 mA, VOUT +1 V < VIN < 16 V VIN =VOUT +1 V, IOUT =50 mA, VON/OFF ="H", Ta=−40 to 85°C VIN =VOUT +1 V, VON/OFF ="H" VIN =16 V, VON/OFF ="L" VIN =VOUT +1 V, VON/OFF ="H", VEXT =VOUT, VOUT =VOUT ×0.95 VIN =16 V, VON/OFF ="L" VIN =VOUT +1 V, VON/OFF ="H", VOUT =VOUT ×0.95 VIN =VEXT =VOUT +1 V, VOUT =0 V, VON/OFF ="L" VIN =VEXT =7 V, VON/OFF ="H", VOUT =VOUT ×0.95 VIN =VOUT +1 V, VOUT =0 V, Check VEXT ="L" VIN =VOUT +1 V, VOUT =0 V, Check VEXT ="H" VON/OFF =VOUT +1 V VON/OFF =0 V Rev.5.1_00 (Ta=25°C unless otherwise specified) Test Min. Typ. Max. Unit circuit 16 V 1   VOUT VOUT VOUT V 1 ×0.98 ×1.02    −0.15     0.25   12 2.4    1 100  0.01 ±0.15 30  −10 0.50 10  16       60 0.15  40 1  1.00  0.1 20  0.3 0.1 −0.1 µA 2 A mV mV %/V mV/°C µA µA µA MΩ mA µA mA V 1 1 1 1 1 1 1 2 2 2 2 2 3 The characteristics vary with the associated external components. The characteristics given above are those obtained when the IC is combined with a Toshiba Corporation 2SA1213-Y for the PNP transistor and a 10 µF tantalum capacitor for the output capacitor (CL). 6 Seiko Instruments Inc. Rev.5.1_00 Test Circuits 1. EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 2. A A + − VIN EXT VOUT + − A A VIN EXT VOUT A ON/OFF VSS V A ON/OFF VSS Figure 4 3. Figure 5 A VIN EXT VOUT A A ON/OFF VSS V Figure 6 Seiko Instruments Inc. 7 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Operation 1. Basic Operation Rev.5.1_00 Figure 7 shows a block diagram of the S-816 Series. The device compares the voltage which is obtained from dividing output voltage VOUT by feedback resistances RA and RB with reference voltage VREF through the error amplifier, output of which controls the sink driver. By regulating the base current of the external PNP transistor, the IC maintains a constant output voltage that is not susceptible to an input voltage variation or temperature variation. IN OUT VIN EXT VOUT Current Source RC Overcurrent Protection Circuit RA + − CL + VREF ON/OFF − Error Amplifier Sink Driver RB VSS Figure 7 2. Internal Circuits 2.1. Shutdown Pin ( ON/OFF Pin) This pin activates and deactivates the regulating operation. When the shutdown pin is set to "L", the VIN voltage appears through the EXT pin, prodding the external PNP transistor to off. All the internal circuits stop working, and substantial savings in current consumption are achieved accordingly. In this condition, the EXT pin is pulled up to VIN by a pull-up resistance (approx. 0.5 MΩ) inside the IC in order to ensure you power cut off of the external PNP transistor. The shutdown pin is configured as shown in Figure 8. Since neither pull-up or pull-down is performed internally, please avoid using the pin in a floating state. Also, be sure to refrain from applying a voltage of 0.3 V to 2.4 V to this pin lest the current consumption increase. When this shutdown pin is not used, leave it coupled to the VIN pin. Table 5 Shutdown Pin "H" "L" Internal Circuit Activated Deactivated EXT Pin Voltage VIN−VBE VIN VOUT Pin Voltage Set value Hi-Z ON/OFF VIN VSS Figure 8 8 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 2.2. Overcurrent Protection Circuit The overcurrent protection function of the S-816 Series monitors the EXT pin sink current (base current of the external PNP transistor) with an overcurrent protection circuit incorporated in the IC, and limits that current (EXT pin sink current). As the load current increases, the EXT pin sink current (base current of the external PNP transistor) also grows larger to maintain the output voltage. The overcurrent protection circuit clamps and limits the EXT pin sink current to the EXT output sink overcurrent set value (IMAX) in order to prevent it from increasing beyond that value. The load current at which the overcurrent protection function works is represented by the following equation: IOUT_MAX = IMAX × hFE In this case, hFE is the DC amplification factor of the external PNP transistor. IOUT_MAX represents the maximum output current of this regulator. If it is attempted to obtain a higher load current, the output voltage will fall. Note that within the overcurrent protection function of this IC, the external PNP transistor may not be able to be protected from collector overcurrents produced by an EXT-GND short-circuiting or other phenomenon occurring outside the IC. To protect the external PNP transistor from such collector overcurrents, it will be necessary to choose a transistor with a larger power dissipation than IOUT_MAX × VIN, or to add an external overcurrent protection circuit. With regard to this external overcurrent protection circuit, refer to "Overcurrent Protection Circuit" in " Application Circuits". 2.3. Phase Compensation Circuit The S-816 Series performs phase compensation with a phase compensation circuit, incorporated in the IC, and the ESR (Equivalent Series Resistance) of an output capacitor, to secure stable operation even in the presence of output load variation. A uniquely devised phase compensation circuit has resulted in improved transient response characteristics of the IC, while preserving the same feature of low current consumption. This feature allows the IC to be used in applications where the input variation or load variation is heavy. Because the S-816 Series is designed to perform the phase compensation, utilizing the ESR of an output capacitor, such output capacitor (CL) should always be placed between VOUT and VSS. Since each capacitor to be employed has an optimum range of their own characteristics, be sure to choose components for the IC with your all attention. For details, refer to " Selection of Associated External Components". Seiko Instruments Inc. 9 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Selection of Associated External Components 1. External PNP Transistor Rev.5.1_00 Select an external transistor according to the conditions of input voltage, output voltage, and output current. A low-saturation voltage PNP transistor with "hFE" ranging from 100 to 300 will be suitable for this IC. The parameters for selection of the external PNP transistor include the maximum collector-base voltage, the maximum collector-emitter voltage, the DC amplification factor (hFE), the maximum collector current and the collector dissipation. The maximum collector-base voltage and the maximum collector-emitter voltage are determined by the input voltage range in each specific application to be employed. You may select a transistor with an input voltage at least several volts higher than the expected maximum input voltage. The DC amplification factor (hFE) affects the maximum output current that can be supplied to the load. With an internal overcurrent protection circuit of this IC, the base current is clamped, and will not exceed the overcurrent set value (IMAX). Select a transistor which is capable of delivering the required maximum output current to the intended application, with hfe and maximum collector current. (Refer to " Overcurrent Protection Circuit") Likewise, select a transistor, based on the maximum output current and the difference between the input and output voltages, with due attention to the collector dissipation. 2. Output Capacitor (CL) The S-816 Series performs phase compensation by an internal phase compensation circuit of IC, and the ESR (Equivalent Series Resistance) of an output capacitor for to secure stable operation even in the presence of output load variation. Therefore, always place a capacitor (CL) of 4.7 µF or more between VOUT and VSS. For stable operation of the S-816 Series, it is essential to employ a capacitor with an ESR having optimum range. Whether an ESR is larger or smaller than that optimum range (approximately 0.1 Ω to 5 Ω), this could produce an unstable output, and cause a possibility of oscillations. For this reason, a tantalum electrolytic capacitor is recommended. When a ceramic capacitor or an OS capacitor having a low ESR is selected, it will be necessary to connect an additional resistance that serves for the ESR in series with the output capacitor, as illustrated in Figure 9. The resistance value that needs to be added will be from 0.1 Ω to 5 Ω, but this value may vary depends on the service conditions, and should be defined through careful evaluation in advance. In general, our recommendation is 0.3 Ω or so. An aluminum electrolytic capacitor tends to produce oscillations as its ESR increases at a low temperature. Beware of this case. When this type of capacitor is employed, make thorough evaluation of it, including its temperature characteristics. IN OUT VIN EXT VOUT R ≅ 0.3 Ω S-816 Series ON/ OFF CL VSS Figure 9 Caution The above connection diagram and constant will not guarantee successful operation. Perform through evaluation using the actual application to set the constant. 10 Seiko Instruments Inc. Rev.5.1_00 Standard Circuit EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series VIN EXT VOUT Current Source Pull-Up + − + VREF ON/ OFF − Error Amplifier Overcurrent Protection Circuit + − Sink Driver VSS Figure 10 Caution The above connection diagram does not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constant. Seiko Instruments Inc. 11 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Precautions Rev.5.1_00 • The overcurrent protection function of this IC detects and limits the sink current at the EXT pin inside the IC. Therefore, it does not work on collector overcurrents which are caused by an EXT-GND shortcircuiting or other phenomenon outside the IC. To protect the external PNP transistor from collector overcurrents perfectly, it is necessary to provide another external overcurrent protection circuit. • This IC performs phase compensation by using an internal phase compensator circuit and the ESR of an output capacitor. Therefore, always place a capacitor of 4.7 µF or more between VOUT and VSS. A tantalum type capacitor is recommended for this purpose. Moreover, to secure stable operation of the S-816 Series, it will be necessary to employ a capacitor having an ESR (Equivalent Series Resistance) covered in a certain optimum range (0.1 Ω to 5 Ω). Whether an ESR is larger or smaller than that optimum range, this could result in an unstable output, and cause a possibility of oscillations. Select a capacitor through careful evaluation made according to the actual service conditions. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • Make sure that the power dissipation inside the IC due to the EXT output sink current (especially at a high temperature) will not surpass the power dissipation of the package. • SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 12 Seiko Instruments Inc. Rev.5.1_00 Application Circuits EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 1. Overcurrent Protection Circuit Figure 11 shows a sample of overcurrent protection implemented with an external circuit connected. The internal overcurrent protection function of the S-816 Series is designed to detect the sink current (base current of the PNP transistor) at the EXT pin, therefore it may not be able to protect the external PNP transistor from collector overcurrents caused by an EXT-GND short-circuiting or other phenomenon occurring outside the IC. This sample circuit activates the regulator intermittently against collector overcurrents, thereby suppressing the heat generation of the external PNP transistor. The duty of the on-time and off-time of the intermittent operation can be regulated through an external component. RS 2SA1213Y OUT 0.5 Ω Tr1 VIN + CIN − 10 µF R2 2 kΩ R4 2 kΩ VIN R1 100 kΩ + CL − 10 µF EXT VOUT ON/ OFF Tr2 C1 0.22 µF S-816 Series R3 C2 2 kΩ 0.22 µF VSS Figure 11 Caution The above connection diagram and constant will not guarantee successful operation. Perform through evaluation using the actual application to set the constant. S-816A30AMC (VIN =4 V) S-816A30AMC (VIN =4 V) 1A Load Current (0.5 A/div) 0A 1A Load Current (0.5 A/div) 0A 2V VON/OFF (1 V/div) 0V t (2 ms/div) 2V VON/OFF (1 V/div) 0V t (100 µs/div) Figure 12 Output Current Waveforms during Intermittent Operation Prompted by Load Short-Circuiting Seiko Instruments Inc. 13 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Rev.5.1_00 The detection of the overcurrent is done by the sense resistance (RS) and the PNP transistor (Tr1). When Tr1 comes on, triggered by a voltage drop of RS, the NPN transistor (Tr2) also comes on, according to the time constants of the capacitor (C2) and resistance (R2). This causes the shutdown pin to turn to the "L" level, and the regulating operation to stop, and interrupting the current to the load. When the load current is cut off, the voltage drop of RS stops. This makes Tr1 off again, and also makes the NPN transistor (Tr2) off. In this condition, the shutdown pin returns to the "H" level, according to the time constants of the capacitor (C1) and resistance (R1). This delay time in which shutdown pin returns to the "H" level from the "L" level is the time in which the load current remains cut off. If an overcurrent flows again after the shutdown pin has assumed the "H" level following the delay time and the regulating operation has been restarted, the circuit will again suspend the regulating operation and resume the intermittent operation. This intermittent operation will be continued till the overcurrentt is eliminated, and once theovercurrent disappears, the normal operation will be restored. The overcurrent detection value (IOUT_MAX) is represented by the following equation: IOUT_MAX = |VBE1| / RS In this case, RS denotes the resistance value of the sense resistance, and VBE1 denotes the base-emitter saturation voltage of Tr1. For the PNP transistor (Tr1) and the NPN transistor (Tr2), try to select those of small-signal type that offer a sufficient withstand voltage against the input voltage (VIN). The on-time (tON) and the off-time (tOFF) of the intermittent operation are broadly expressed by the following equations: tON = −1 × C2 × R2 × LN ( 1 − ( VBE2 × ( 1 + R2 / R3 ) ) / ( VIN − VBE1 ) ) tOFF = −1 × C1 × R1 × LN ( 1 − VSH / VIN ) In this case, VBE2 denotes the base-emitter saturation voltage of Tr2, VIN denotes the input voltage, and VSH denotes the inversion voltage ("L"→"H") of the shutdown pin. Set the on-time value that does not cause the overcurrent protection to be activated by a rush current to the load capacitor. Then, compute the ratio between the on-time and the off-time from the maximum input voltage of the appropriate application and the power dissipation of the external PNP transistor, and decide the off-time with reference to the on-time established earlier. Take the equation above as a rough guide, because the actual on-time (tON) and off-time (tOFF) should be defined and checked using the utilizing components. 2. External Adjustment of Output Voltage The S-816 Series allows you to adjust the output voltage or to set its value over the output voltage range (6 V) of the products of this series, when external resistances RA, RB and capacitor CC are added, as illustrated in Figure 13. Moreover, a temperature gradient can be obtained by inserting a thermistor or other element in series with external resistances RA and RB. OUT VIN EXT Error amplifier CC VOUT R1 + − VREF RA + VIN − CIN RB + − CL R2 ON/ OFF VSS Figure 13 14 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series has an internal impedance resulting from R1 and R2 between the VOUT and the VSS pin, as shown in Figure 13. Therefore, the influence of the internal resistances (R1, R2) of the IC has to be taken into consideration in defining the output voltage (OUT). The output voltage (OUT) is expressed by the following equation: OUT = VOUT + VOUT × RA ÷ ( RB // *1 RI ) *1. "//" denotes a combined resistance in parallel. In this case, VOUT is the output voltage value of the S-816 Series, RA and RB is the resistance values of the external resistances, and RI is the resistance value (R1+R2) of the internal resistances in the IC. The accuracy of the output voltage (OUT) is determined by the absolute accuracy of external connecting resistances RA and RB, the output voltage accuracy (VOUT ±2.0%) of the S-816 Series, and deviations in the absolute value of the internal resistance (RI) in the IC. The maximum value (OUTmax) and the minimum value (OUTmin) of the output voltage (OUT), including deviations, are expressed by the following equations: OUTmax = VOUT × 1.02 + VOUT × 1.02 × RAmax ÷ ( RBmin // RImin ) OUTmin = VOUT × 0.98 + VOUT × 0.98 × RAmin ÷ ( RBmax // RImax ) Where RAmax, RAmin, RBmax and RBmin denote the maximum and minimum of the absolute accuracy of external resistances RA and RB, and RImax and RImin denote the maximum and minimum deviations of the absolute value of the internal resistance (RI) in the IC, respectively. The deviations in the absolute value of internal resistance (RI) in the IC vary with the output voltage set value of the S-816 Series, and are broadly classified as follows: • • • • • Output voltage (VOUT) Output voltage (VOUT) Output voltage (VOUT) Output voltage (VOUT) Output voltage (VOUT) 2.5 V to 2.7 V 2.8 V to 3.1 V 3.2 V to 3.7 V 3.8 V to 5.1 V 5.2 V to 6.0 V ⇒ ⇒ ⇒ ⇒ ⇒ 3.29 MΩ to 21.78 MΩ 3.29 MΩ to 20.06 MΩ 2.23 MΩ to 18.33 MΩ 2.23 MΩ to 16.61 MΩ 2.25 MΩ to 14.18 MΩ If a value of RI given by the equation shown below is taken in calculating the output voltage (OUT), a median voltage deviation of the output voltage (OUT) will be obtained. RI = 2 ÷ ( 1 ÷ (Maximum value of internal resistance of IC) + 1 ÷ (Minimum value of internal resistance of IC) ) The closer the output voltage (OUT) and the output voltage set value (VOUT) of the IC are brought to each other, the more the accuracy of the output voltage (OUT) remains immune to deviations in the absolute accuracy of external resistances (RA, RB) and the absolute value of the internal resistance (RI) of the IC. In particular, to suppress the influence of deviations in the internal resistance (RI), the resistance values of external resistances (RA, RB) need to be limited to a much smaller value than that of the internal resistance (RI). However, since reactive current flows through the external resistances (RA, RB), there is a tradeoff between the accuracy of the output voltage (OUT) and the reactive current. This should be taken into consideration, according to the requirements of the intended application. Note that when larger value (more than 1 MΩ) is taken for the external resistances (RA, RB), IC is vulnerable to external noise. Check the influence of this value well with the actual application. Furthermore, add a capacitor CC in parallel to the external resistance RA in order to avoid output oscillations and other types of instability. (Refer to Figure 13) Make sure that the capacitance value of CC is larger than the value given by the following equation: CC[F] ≥ 1 ÷ ( 2 × π × RA[Ω] × 6000 ) Caution The above connection diagram and constant will not guarantee successful operation. Perform through evaluation using the actual application to set the constant. Seiko Instruments Inc. 15 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Typical Characteristics 1. Input Voltage (VIN) - Output Voltage (VOUT) Characteristics VIN-VOUT S-816A30AMC (IOUT=50 mA) 3.10 3.08 3.06 3.04 VOUT (V) 3.00 2.98 2.96 2.94 2.92 2.90 2 4 6 8 VIN (V) 10 12 14 16 3.02 Rev.5.1_00 VIN-VOUT S-816A50AMC (IOUT=50 mA) 5.10 5.08 Ta=25°C Ta=−40°C 5.06 5.04 5.02 VOUT (V) 5.00 4.98 Ta=25°C Ta=85°C Ta=85°C 4.96 4.94 4.92 4.90 2 4 6 8 VIN (V) 10 12 Ta=−40°C 14 16 VIN-VOUT S-816A30AMC (Ta=25°C) 3.10 3.05 3.00 VOUT (V) 2.95 2.90 2.85 2.80 2.8 2.9 3.0 3.1 VIN-VOUT S-816A50AMC (Ta=25°C) 5.10 5.05 5.00 VOUT (V) 4.95 IOUT=500 mA IOUT=100 mA IOUT=1 mA 3.2 3.3 VIN (V) 3.4 3.5 4.90 IOUT=1 A 3.6 3.7 3.8 4.85 4.80 4.8 4.9 5.0 5.1 IOUT=500 mA IOUT=100 mA IOUT=1 mA 5.2 5.3 VIN (V) 5.4 5.5 IOUT=1 A 5.6 5.7 5.8 2. Output Current (IOUT) - Output Voltage (VOUT) Characteristics IOUT-VOUT S-816A30AMC (VIN=4 V) 3.10 3.08 3.06 3.04 3.02 VOUT (V) 3.00 2.98 2.96 2.94 2.92 2.90 1 10 IOUT (mA) 100 IOUT-VOUT S-816A50AMC (VIN=6 V) 5.10 5.08 Ta=25°C Ta=−40°C 5.06 5.04 5.02 VOUT (V) 5.00 4.98 4.96 4.94 4.92 4.90 1 10 IOUT (mA) 100 Ta=25°C Ta=85°C Ta=85°C 1000 Ta=−40°C 1000 16 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 3. Temperature (Ta) - Output Voltage (VOUT) Characteristics Ta-VOUT S-816A30AMC (VIN=4 V, IOUT=50 mA) 3.10 3.08 3.06 3.04 VOUT (V) 3.00 2.98 2.96 2.94 2.92 2.90 −50 −25 0 25 Ta (°C) 50 75 100 3.02 Ta-VOUT S-816A50AMC (VIN=6 V, IOUT=50 mA) 5.10 5.08 5.06 5.04 5.02 VOUT (V) 5.00 4.98 4.96 4.94 4.92 4.90 −50 −25 0 25 Ta (°C) 50 75 100 4. Input Voltage (VIN) - Consumption Current (ISS) Characteristics VIN-ISS S-816A30AMC (VON/OFF="H") 50 45 40 35 30 ISS (µA) 25 20 15 10 5 0 0 2 4 6 8 VIN (V) 10 12 14 16 Ta=85°C Ta=25°C Ta=−40°C 5. Input Voltage (VIN) - EXT Output Sink Overcurrent Set Value (IMAX) Characteristics VIN-IMAX S-816A30AMC 22 20 18 IMAX (mA) 16 14 12 10 4 6 8 10 VIN (V) 12 Ta=85°C Ta=25°C Ta=−40°C 14 16 Seiko Instruments Inc. 17 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 6. Input Voltage (VIN) - Shutdown Pin Input Voltage (VSH, VSL) Characteristics VIN-VSH S-816A30AMC 2.5 Rev.5.1_00 VIN-VSL S-816A30AMC 2.5 Ta=85°C 2.0 1.5 2.0 1.5 1.0 0.5 0.0 VSH (V) Ta=25°C 1.0 0.5 0.0 4 6 8 10 VIN (V) 12 14 16 VSL (V) Ta=−40°C Ta=−40°C Ta=25°C Ta=85°C 4 6 8 10 VIN (V) 12 14 16 18 Seiko Instruments Inc. Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series Transient Response Characteristics (Typical Data) 1. Input Transient Response Characteristics (Power-on VIN=0 V → VOUT+1 V, IOUT=0 A, CL=10 µF) S-816A30AMC (VIN =0 V → 4 V) S-816A50AMC (VIN =0 V → 6 V) 6V 4V VIN (2 V/div) 0V VIN (2 V/div) 0V VOUT (2 V/div) 0V t (100 µs/div) VOUT (2 V/div) 0V t (100 µs/div) 2. Input Transient Response Characteristics (Supply voltage variation VIN=VOUT+1 V ↔ VOUT+2 V, CL=10 µF) S-816A30AMC (IOUT =10 mA) S-816A30AMC (IOUT =300 mA) 5V VIN (0.5 V/div) 4V 5V VIN (0.5 V/div) 4V VOUT (20 mV/div) 3V VOUT (20 mV/div) 3V t (100 µs/div) t (100 µs/div) S-816A50AMC (IOUT =10 mA) S-816A50AMC (IOUT =300 mA) 7V VIN (0.5 V/div) 6V 7V VIN (0.5 V/div) 6V VOUT (20 mV/div) 5V VOUT (20 mV/div) 5V t (100 µs/div) t (100 µs/div) Seiko Instruments Inc. 19 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series 3. Load Transient Response Characteristics (Power-on IOUT=1 mA ↔ 100 mA, CL=10 µF) S-816A30AMC (VIN =4 V) 100 mA IOUT (50 mA/div) 1 mA Rev.5.1_00 S-816A30AMC (VIN =4 V) 100 mA IOUT (50 mA/div) 1 mA 3V VOUT (20 mV/div) 3V VOUT (20 mV/div) t (50 µs/div) t (50 µs/div) S-816A50AMC (VIN =6 V) 100 mA IOUT (50 mA/div) 1 mA S-816A50AMC (VIN =6 V) 100 mA IOUT (50 mA/div) 1 mA 5V VOUT (20 mV/div) 5V VOUT (20 mV/div) t (50 µs/div) t (50 µs/div) 4. Shutdown Pin Transient Response Characteristics (VON/OFF=0 V → VIN, IOUT=0 A, CL=10 µF) S-816A30AMC (VIN =4 V) S-816A50AMC (VIN =6 V) 6V 4V VON/OFF (2 V/div) 0V VON/OFF (2 V/div) 0V VOUT (2 V/div) 0V t (100 µs/div) VOUT (2 V/div) 0V t (100 µs/div) 20 Seiko Instruments Inc. 2.9±0.2 1.9±0.2 5 4 1 2 3 0.16 -0.06 +0.1 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SCALE UNIT SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 0.25±0.1 ø1.0 -0 +0.2 4.0±0.1 1.4±0.2 3.2±0.2 321 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE No. SCALE UNIT SOT235-A-Carrier Tape MP005-A-C-SD-2.1 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. MP005-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT235-A-Reel MP005-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. 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