S-8211CBD-I6T1G

Rev.5.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series The S-8211C Series are protection ICs for single-cell lithium-ion / lithium polymer rechargeable batteries and include high-accuracy voltage detectors and delay circuits. These ICs are suitable for protecting single-cell rechargeable lithium-ion / lithium polymer battery packs from overcharge, overdischarge, and overcurrent. Features (1) High-accuracy voltage detection circuit • Overcharge detection voltage Accuracy ±25 mV (+25 °C) Accuracy ±30 mV (−5 to +55 °C) • Overcharge release voltage 3.8 to 4.4 V*1 Accuracy ±50 mV • Overdischarge detection voltage 2.0 to 3.0 V (10 mV steps) Accuracy ±50 mV *2 Accuracy ±100 mV • Overdischarge release voltage 2.0 to 3.4 V • Discharge overcurrent detection voltage 0.05 to 0.30 V (10 mV steps) Accuracy ±15 mV • Load short-circuiting detection voltage 0.5 V (fixed) Accuracy ±200 mV • Charge overcurrent detection voltage −0.1 V (fixed) Accuracy ±30 mV Detection delay times are generated by an internal circuit (external capacitors are unnecessary). Accuracy ±20% High-withstanding-voltage device is used for charger connection pins (VM pin and CO pin : Absolute maximum rating = 28 V) 0 V battery charge function available / unavailable are selectable. Wide operating temperature range −40 to +85 °C Low current consumption • Operation mode 3.0 µA typ., 5.5 µA max. (+25 °C) • Power-down mode 0.2 µA max. (+25 °C) Small package SOT-23-5, SNT-6A Lead-free product 3.9 to 4.4 V (5 mV steps) (2) (3) (4) (5) (6) (7) (8) *1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 to 0.4 V in 50 mV steps.) *2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 to 0.7 V in 100 mV steps.) Applications • Lithium-ion rechargeable battery packs • Lithium polymer rechargeable battery packs Packages Package Name SOT-23-5 SNT-6A Drawing Code Package MP005-A PG006-A Tape MP005-A PG006-A Reel MP005-A PG006-A Land − PG006-A Seiko Instruments Inc. 1 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Block Diagram Output control circuit 0 V battery charge circuit or 0 V battery charge inhibition circuit Oscillator control circuit Rev.5.0_00 DO Divider control circuit VDD CO Charger detection circuit + − RVMD Discharge overcurrent detection comparator Overcharge detection comparator + − VM RVMS + − Charge overcurrent detection comparator + − Overdischarge detection comparator Load short-circuiting detection comparator VSS + − Remark All diodes shown in figure are parasitic diodes. Figure 1 2 Seiko Instruments Inc. Rev.5.0_00 Product Name Structure 1. Product Name S-8211C xx xxxx G BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Package name (abbreviation) and IC packing specifications *1 M5T1 : SOT-23-5, Tape I6T1 : SNT-6A, Tape Serial code Sequentially set from AA to ZZ *1. Refer to the taping specifications. *2. Refer to the “2. Product Name List”. *2 Seiko Instruments Inc. 3 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.5.0_00 2. Product Name List (1) SOT-23-5 Table 1 Overcharge Detection Voltage VCU Overcharge Over-discharge Over-discharge Release Detection Release Voltage Voltage Voltage VCL VDL VDU Discharge Overcurrent Detection Voltage VDIOV 0 V Battery Charge Function Product Name / Item Delay Time Combination*1 S-8211CAA-M5T1G 4.275 V 4.175 V 2.30 V 2.40 V 0.10 V Available (1) S-8211CAB-M5T1G 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (2) S-8211CAD-M5T1G 4.350 V 4.150 V 2.30 V 3.00 V 0.20 V Available (3) S-8211CAE-M5T1G 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V Available (4) S-8211CAF-M5T1G 4.275 V 4.275 V 2.30 V 2.30 V 0.10 V Available (5) S-8211CAH-M5T1G 4.280 V 4.080 V 2.30 V 2.30 V 0.08 V Available (1) S-8211CAI-M5T1G 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Available (1) S-8211CAJ-M5T1G 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Unavailable (1) S-8211CAK-M5T1G 4.280 V 4.080 V 2.30 V 2.30 V 0.13 V Unavailable (1) S-8211CAL-M5T1G 4.280 V 4.130 V 2.60 V 3.10 V 0.15 V Unavailable (1) S-8211CAM-M5T1G 4.280 V 4.130 V 2.80 V 3.10 V 0.15 V Unavailable (1) S-8211CAN-M5T1G 4.200 V 4.100 V 2.80 V 2.90 V 0.15 V Unavailable (1) S-8211CAO-M5T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.12 V Available (5) S-8211CAP-M5T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.13 V Available (5) S-8211CAQ-M5T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (5) S-8211CAR-M5T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (1) S-8211CAS-M5T1G 4.280 V 4.130 V 2.80 V 3.10 V 0.10 V Unavailable (1) 0.10 V Available (4) S-8211CAT-M5T1G 4.275 V 4.075 V 2.80 V 3.10 V S-8211CAU-M5T1G 4.280 V 4.130 V 2.80 V 3.10 V 0.05 V Unavailable (1) S-8211CAV-M5T1G 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Available (2) Available (1) S-8211CAY-M5T1G 4.280 V 4.280 V 2.80 V 2.80 V 0.05 V Available (1) S-8211CAZ-M5T1G 4.280 V 4.280 V 3.00 V 3.00 V 0.075 V *1. Refer to the Table 3 about the details of the delay time combinations (1) to (7). Remark Please contact our sales office for the products with detection voltage value other than those specified above. 4 Seiko Instruments Inc. Rev.5.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (2) SNT-6A Table 2 Overcharge Detection Voltage VCU Overcharge Over-discharge Over-discharge Release Detection Release Voltage Voltage Voltage VCL VDL VDU Discharge Overcurrent Detection Voltage VDIOV 0 V Battery Charge Function Product Name / Item Delay Time Combination*1 (1) Available S-8211CAA-I6T1G 4.275 V 4.175 V 2.30 V 2.40 V 0.10 V S-8211CAB-I6T1G 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (2) S-8211CAD-I6T1G 4.350 V 4.150 V 2.30 V 3.00 V 0.20 V Available (3) 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V S-8211CAE-I6T1G Available (4) 4.275 V 4.275 V 2.30 V 2.30 V 0.10 V S-8211CAF-I6T1G Available (5) 4.280 V 4.080 V 2.30 V 2.30 V 0.08 V S-8211CAH-I6T1G Available (1) 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V S-8211CAI-I6T1G Available (1) 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V S-8211CAJ-I6T1G Unavailable (1) 4.280 V 4.080 V 2.30 V 2.30 V 0.13 V S-8211CAK-I6T1G Unavailable (1) 4.280 V 4.130 V 2.60 V 3.10 V 0.15 V S-8211CAL-I6T1G Unavailable (1) 4.280 V 4.130 V 2.80 V 3.10 V 0.15 V S-8211CAM-I6T1G Unavailable (1) 4.200 V 4.100 V 2.80 V 2.90 V 0.15 V S-8211CAN-I6T1G Unavailable (1) 4.275 V 4.075 V 2.30 V 2.30 V 0.12 V S-8211CAO-I6T1G Available (5) (5) S-8211CAP-I6T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.13 V Available (5) S-8211CAQ-I6T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (1) S-8211CAR-I6T1G 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available 4.280 V 4.130 V 2.80 V 3.10 V 0.10 V S-8211CAS-I6T1G Unavailable (1) 4.275 V 4.075 V 2.80 V 3.10 V 0.10 V S-8211CAT-I6T1G Available (4) S-8211CAU-I6T1G 4.280 V 4.130 V 2.80 V 3.10 V 0.05 V Unavailable (1) S-8211CAV-I6T1G 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Available (2) S-8211CAW-I6T1G 4.280 V 4.080 V 2.40 V 2.40 V 0.05 V Unavailable (6) (4) Available S-8211CAX-I6T1G 4.275 V 4.175 V 2.30 V 2.30 V 0.12 V Available (1) S-8211CAY-I6T1G 4.280 V 4.280 V 2.80 V 2.80 V 0.05 V (1) Available S-8211CBA-I6T1G 4.275 V 4.175 V 2.30 V 2.40 V 0.05 V (1) Available S-8211CBB-I6T1G 4.300 V 4.100 V 2.30 V 2.30 V 0.13 V Available (5) S-8211CBD-I6T1G 4.275 V 4.275 V 2.30 V 2.30 V 0.05 V Unavailable (7) S-8211CBN-I6T1G 4.225 V 4.125 V 2.00 V 2.00 V 0.20 V Available (5) S-8211CBO-I6T1G 4.270 V 4.070 V 2.30 V 2.30 V 0.10 V Unavailable (4) S-8211CBR-I6T1G 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V *1. Refer to the Table 3 about the details of the delay time combinations (1) to (7). Remark Please contact our sales office for the products with detection voltage value other than those specified above. Seiko Instruments Inc. 5 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Table 3 Delay Time Combination (1) (2) (3) (4) (5) (6) (7) Overcharge Detection Delay Time tCU 1.2 s 1.2 s 143 ms 1.2 s 1.2 s 1.2 s 573 ms Overdischarge Detection Delay Time tDL 150 ms 150 ms 38 ms 150 ms 38 ms 150 ms 150 ms Discharge Overcurrent Detection Delay Time tDIOV 9 ms 9 ms 18 ms 18 ms 9 ms 4.5 ms 4.5 ms Load Short-circuiting Detection Delay Time tSHORT 300 µs 560 µs 300 µs 300 µs 300 µs 300 µs 300 µs Rev.5.0_00 Charge Overcurrent Detection Delay Time tCIOV 9 ms 9 ms 9 ms 9 ms 9 ms 9 ms 4.5 ms Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office. Table 4 Delay Time Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay Time Charge overcurrent detection delay time Symbol tCU tDL tDIOV tSHORT tCIOV Selection Range 143 ms 38 ms 4.5 ms − 4.5 ms 573 ms 150 ms 9 ms 300 µs 9 ms 1.2 s 300 ms 18 ms 560 µs 18 ms Remark Select a value from the left. Select a value from the left. Select a value from the left. Select a value from the left. Select a value from the left. Remark The value surrounded by bold lines is the delay time of the standard products. 6 Seiko Instruments Inc. Rev.5.0_00 Pin Configurations SOT-23-5 Top view 5 4 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Table 5 Pin No. 1 2 3 4 Symbol VM VDD VSS DO CO Description Voltage detection between VM pin and VSS pin (Overcurrent / charger detection pin) Connection for positive power supply input Connection for negative power supply input Connection of discharge control FET gate (CMOS output) Connection of charge control FET gate (CMOS output) 1 2 3 5 Figure 2 SNT-6A Top v iew 1 2 3 6 5 4 Pin No. 1 Symbol NC*1 Table 6 Description Figure 3 No connection Connection of charge control FET gate 2 CO (CMOS output) Connection of discharge control FET gate 3 DO (CMOS output) 4 VSS Connection for negative power supply input 5 VDD Connection for positive power supply input Voltage detection between VM pin and VSS pin 6 VM (Overcurrent / charger detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Seiko Instruments Inc. 7 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Absolute Maximum Ratings Table 7 Rev.5.0_00 (Ta = 25 °C unless otherwise specified) Item Input voltage between VDD pin and VSS pin VM pin input voltage DO pin output voltage CO pin output voltage Power dissipation SOT-23-5 Symbol VDS VVM VDO VCO PD Topr Applied pin VDD VM DO CO − − − − Absolute Maximum Ratings VSS − 0.3 to VSS + 12 VDD − 28 to VDD + 0.3 VSS − 0.3 to VDD + 0.3 VVM − 0.3 to VDD + 0.3 250 (When not mounted on board) 600*1 400*1 − 40 to + 85 − 55 to + 125 Unit V V V V mW mW mW °C °C SNT-6A Operating ambient temperature Storage temperature Tstg − *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Dissipation (P D) [mW] 600 500 SOT-23-5 SNT-6A 400 300 200 100 0 0 100 150 50 Ambient Temperature ( Ta) [° C] Figure 4 Power Dissipation of Package (When Mounted on Board) 8 Seiko Instruments Inc. Rev.5.0_00 Electrical Characteristics 1. Except Detection Delay Time (25 °C) BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Table 8 (Ta = 25 °C unless otherwise specified) Item DETECTION VOLTAGE 3.90 to 4.40 V, Adjustable Overcharge detection voltage VCU 3.90 to 4.40 V, Adjustable, *1 Ta = −5 to +55 °C 3.80 to 4.40 V, Adjustable VCL ≠ VCU VCL = VCU VCU −0.025 VCU −0.03 VCL −0.05 VCL −0.025 VDL −0.05 VDU −0.10 VDU −0.05 VDIOV −0.015 0.30 −0.13 1.2 − 100 10 1.5 1.5 1.0 − 2.5 2.5 2.5 2.5 VCU VCU VCL VCL VDL VDU VDU VDIOV 0.50 −0.1 − − 300 20 − − 3.0 − 5 5 5 5 VCU +0.025 VCU +0.03 VCL +0.05 VCL +0.025 VDL +0.05 VDU +0.10 VDU +0.05 VDIOV +0.015 0.70 −0.07 − 0.5 900 40 8 28 5.5 0.2 10 10 10 10 V V V V V V V V V V V V kΩ kΩ V V µA µA kΩ kΩ kΩ kΩ 1 1 1 1 2 2 2 3 3 4 11 12 6 6 − − 5 5 7 7 8 8 1 1 1 1 2 2 2 2 2 2 2 2 3 3 − − 2 2 4 4 4 4 Symbol Condition Min. Typ. Max. Test Test Unit CondiCircuit tion Overcharge release voltage VCL Overdischarge detection voltage VDL 2.00 to 3.00 V, Adjustable 2.00 to 3.40 V, Adjustable VDU ≠ VDL VDU = VDL Overdischarge release voltage VDU Discharge overcurrent detection voltage Load short-circuiting detection voltage*2 Charge overcurrent detection voltage 0 V BATTERY CHARGE FUNCTION 0 V battery charge starting charger voltage 0 V battery charge inhibition battery voltage INTERNAL RESISTANCE Resistance between VM pin and VDD pin Resistance between VM pin and VSS pin INPUT VOLTAGE Operating voltage between VDD pin and VSS pin Operating voltage between VDD pin and VM pin INPUT CURRENT Current consumption during operation Current consumption at power-down OUTPUT RESISTANCE CO pin resistance “H” CO pin resistance “L” DO pin resistance “H” DO pin resistance “L” VDIOV VSHORT VCIOV V0CHA V0INH RVMD RVMS VDSOP1 VDSOP2 IOPE IPDN RCOH RCOL RDOH RDOL 0.05 to 0.30 V, Adjustable − − 0 V battery charging function “available” 0 V battery charging function “unavailable” VDD = 1.8 V, VVM = 0 V VDD = 3.5 V, VVM = 1.0 V − − VDD = 3.5 V, VVM = 0 V VDD = VVM = 1.5 V VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V VDO = 0.5 V, VDD =VVM = 1.8 V *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. *2. In any conditions, Load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage (VDIOV). Seiko Instruments Inc. 9 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series 2. Except Detection Delay Time (−40 to +85 °C*1) Table 9 Rev.5.0_00 Item DETECTION VOLTAGE Overcharge detection voltage Symbol Condition *1 (−40 to +85 °C unless otherwise specified) Test Test Min. Typ. Max. Unit CondiCircuit tion VCU 3.90 to 4.40 V, Adjustable 3.80 to 4.40 V, Adjustable VCL ≠ VCU VCL = VCU Overcharge release voltage VCL VCU − 0.060 VCL − 0.08 VCL − 0.06 VDL − 0.11 VDU − 0.15 VDU − 0.11 VDIOV − 0.021 0.16 − 0.14 1.7 − 78 7.2 1.5 1.5 0.7 − 1.2 1.2 1.2 1.2 VCU VCL VCL VDL VDU VDU VDIOV 0.50 − 0.1 − − 300 20 − − 3.0 − 5 5 5 5 VCU + 0.040 VCL + 0.065 VCL + 0.04 VDL + 0.13 VDU + 0.19 VDU + 0.13 VDIOV + 0.024 0.84 − 0.06 − 0.3 1310 44 8 28 6.0 0.3 15 15 15 15 V V V V V V V V V V V kΩ kΩ V V µA µA kΩ kΩ kΩ kΩ 1 1 1 2 2 2 3 3 4 11 12 6 6 − − 5 5 7 7 8 8 1 1 1 2 2 2 2 2 2 2 2 3 3 − − 2 2 4 4 4 4 Overdischarge detection voltage VDL 2.00 to 3.00 V, Adjustable 2.00 to 3.40 V, Adjustable VDU ≠ VDL VDU = VDL Overdischarge release voltage VDU Discharge overcurrent detection voltage Load short-circuiting detection voltage*2 Charge overcurrent detection voltage 0 V BATTERY CHARGE FUNCTION 0 V battery charge starting charger voltage 0 V battery charge inhibition battery voltage INTERNAL RESISTANCE Resistance between VM pin and VDD pin Resistance between VM pin and VSS pin INPUT VOLTAGE Operating voltage between VDD pin and VSS pin Operating voltage between VDD pin and VM pin INPUT CURRENT Current consumption during operation Current consumption at power-down OUTPUT RESISTANCE CO pin resistance “H” CO pin resistance “L” DO pin resistance “H” DO pin resistance “L” VDIOV VSHORT VCIOV V0CHA V0INH RVMD RVMS VDSOP1 VDSOP2 IOPE IPDN RCOH RCOL RDOH RDOL 0.05 to 0.30 V, Adjustable − − 0 V battery charging function “available” 0 V battery charging function “unavailable” VDD = 1.8 V, VVM = 0 V VDD = 3.5 V, VVM = 1.0 V − − VDD = 3.5 V, VVM = 0 V VDD = VVM = 1.5 V VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V VDO = 0.5 V, VDD = VVM = 1.8 V *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. *2. In any conditions, Load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage (VDIOV). 10 Seiko Instruments Inc. Rev.5.0_00 3. Detection Delay Time BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (1) S-8211CAA, S-8211CAH, S-8211CAI, S-8211CAJ, S-8211CAK,S-8211CAL, S-8211CAM, S-8211CAN, S8211CAR, S-8211CAS, S-8211CAU, S-8211CAY,S-8211CAZ, S-8211CBA, S-8211CBB Table 10 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time *1 Symbol Condition Min. Typ. Max. Test Test Unit CondiCircuit tion s ms ms µs ms s ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 0.96 120 7.2 240 7.2 0.7 83 5 150 5 1.2 150 9 300 9 1.2 150 9 300 9 1.4 180 11 360 11 2.0 255 15 540 15 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. (2) S-8211CAB, S-8211CAV Table 11 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time tCU tDL tDIOV tSHORT tCIOV − − − − − 0.7 83 5 260 5 1.2 150 9 560 9 2.0 255 15 940 15 s ms ms µs ms 9 9 10 10 10 5 5 5 5 5 tCU tDL tDIOV tSHORT tCIOV − − − − − 0.96 120 7.2 450 7.2 1.2 150 9 560 9 1.4 180 11 670 11 s ms ms µs ms 9 9 10 10 10 5 5 5 5 5 Symbol Condition Min. Typ. Max. Test Test Unit CondiCircuit tion *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 11 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.5.0_00 (3) S-8211CAD Table 12 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time Symbol Condition Min. Typ. Max. Test Test Unit CondiCircuit tion ms ms ms µs ms ms ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 115 30 14.5 240 7.2 82 20 10 150 5 143 38 18 300 9 143 38 18 300 9 172 46 22 360 11 240 65 30 540 15 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. (4) S-8211CAE, S-8211CAT, S-8211CAX, S-8211CBR Table 13 Test Test Unit CondiCircuit tion s ms ms µs ms s ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time *1 Symbol Condition Min. Typ. Max. tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 0.96 120 14.5 240 7.2 0.7 83 10 150 5 1.2 150 18 300 9 1.2 150 18 300 9 1.4 180 22 360 11 2.0 255 30 540 15 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 12 Seiko Instruments Inc. Rev.5.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (5) S-8211CAF, S-8211CAO, S-8211CAP, S-8211CAQ, S-8211CBD, S-8211CBO Table 14 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time *1 Symbol Condition Min. Typ. Max. Test Test Unit CondiCircuit tion s ms ms µs ms s ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 0.96 30 7.2 240 7.2 0.7 20 5 150 5 1.2 38 9 300 9 1.2 38 9 300 9 1.4 46 11 360 11 2.0 65 15 540 15 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. (6) S-8211CAW Table 15 Test Test Unit CondiCircuit tion s ms ms µs ms s ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time *1 Symbol Condition Min. Typ. Max. tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 0.96 120 3.6 240 7.2 0.7 83 2.5 150 5 1.2 150 4.5 300 9 1.2 150 4.5 300 9 1.4 180 5.4 360 11 2.0 255 7.7 540 15 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 13 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.5.0_00 (7) S-8211CBN Table 16 Test Test Unit CondiCircuit tion ms ms ms µs ms ms ms ms µs ms 9 9 10 10 10 9 9 10 10 10 5 5 5 5 5 5 5 5 5 5 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Discharge overcurrent detection delay time Load short-circuiting detection delay time Charge overcurrent detection delay time *1 Symbol Condition Min. Typ. Max. tCU tDL tDIOV tSHORT tCIOV tCU tDL tDIOV tSHORT tCIOV − − − − − − − − − − 458 120 3.6 240 3.6 334 83 2.5 150 2.5 573 150 4.5 300 4.5 573 150 4.5 300 4.5 687 180 5.4 360 5.4 955 255 7.7 540 7.7 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 14 Seiko Instruments Inc. Rev.5.0_00 Test Circuits BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS. (1) Overcharge Detection Voltage, Overcharge Release Voltage (Test Condition 1, Test Circuit 1) Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and VSS pin at which VCO goes from “H” to “L” when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge release voltage (VCL) is defined as the voltage between the VDD pin and VSS pin at which VCO goes from “L” to “H” when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference between overcharge detection voltage (VCU) and overcharge release voltage (VCL). (2) Overdischarge Detection Voltage, Overdischarge Release Voltage (Test Condition 2, Test Circuit 2) Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and VSS pin at which VDO goes from “H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V. Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and VSS pin at which VDO goes from “L” to “H” when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is defined as the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL). (3) Discharge Overcurrent Detection Voltage (Test Condition 3, Test Circuit 2) Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of discharge overcurrent delay time when the voltage V2 is increased rapidly (within 10 µs) from the starting condition of V1 = 3.5 V, V2 = 0 V. (4) Load Short-circuiting Detection Voltage (Test Condition 3, Test Circuit 2) Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of load short-circuiting delay time when the voltage V2 is increased rapidly (within 10 µs) from the starting condition of V1 = 3.5 V, V2 = 0 V. (5) Charge Overcurrent Detection Voltage (Test Condition 4, Test Circuit 2) Charge overcurrent detection voltage (VCIOV) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VCO from “H” to “L” lies between the minimum and the maximum value of charge overcurrent delay time when the voltage V2 is decreased rapidly (within 10 µs) from the starting condition of V1 = 3.5 V, V2 = 0 V. (6) Operating Current Consumption (Test Condition 5, Test Circuit 2) The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions of V1 = 3.5 V and V2 = 0 V (normal status). Seiko Instruments Inc. 15 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Rev.5.0_00 (7) Power-down Current Consumption (Test Condition 5, Test Circuit 2) The power-down current consumption (IPDN) is the current that flows through the VDD pin (IDD) under the set condition of V1 = V2 = 1.5 V (overdischarge status). (8) Resistance between VM Pin and VDD Pin (Test Condition 6, Test Circuit 3) The resistance between VM pin and VDD pin (RVMD) is the resistance between VM pin and VDD pin under the set conditions of V1 = 1.8 V, V2 = 0 V. (9) Resistance between VM Pin and VSS Pin (Test Condition 6, Test Circuit 3) The resistance between VM pin and VSS pin (RVMS) is the resistance between VM pin and VSS pin under the set conditions of V1 = 3.5 V, V2 = 1.0 V. (10) CO Pin Resistance “H” (Test Condition 7, Test Circuit 4) The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 = 3.0 V. (11) CO Pin Resistance “L” (Test Condition 7, Test Circuit 4) The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V, V3 = 0.5 V. (12) DO Pin Resistance “H” (Test Condition 8, Test Circuit 4) The DO pin H resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V4 = 3.0 V. (13) DO Pin Resistance “L” (Test Condition 8, Test Circuit 4) The DO pin L resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V. (14) Overcharge Detection Delay Time (Test Condition 9, Test Circuit 5) The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage V1 momentarily increases (within 10 µs) from overcharge detection voltage (VCU) −0.2 V to overcharge detection voltage (VCU) +0.2 V under the set condition of V2 = 0 V. (15) Overdischarge Detection Delay Time (Test Condition 9, Test Circuit 5) The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage V1 momentarily decreases (within 10 µs) from overcharge detection voltage (VDL) +0.2 V to overcharge detection voltage (VDL) −0.2 V under the set condition of V2 = 0 V. 16 Seiko Instruments Inc. Rev.5.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (16) Discharge Overcurrent Detection Delay Time (Test Condition 10, Test Circuit 5) Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to “L” after the voltage V2 momentarily increases (within 10 µs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V. (17) Load Short-circuiting Detection Delay Time (Test Condition 10, Test Circuit 5) Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to “L” after the voltage V2 momentarily increases (within 10 µs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V. (18) Charge Overcurrent Detection Delay Time (Test Condition 10, Test Circuit 5) Charge overcurrent detection delay time (tCIOV) is the time needed for VCO to go to “L” after the voltage V2 momentarily decreases (within 10 µs) from 0 V to −0.3 V under the set conditions of V1 = 3.5 V, V2 = 0 V. (19) 0 V Battery Charge Starting Charger Voltage (Products with 0 V Battery Charging Function Is “Available”) (Test Condition 11, Test Circuit 2) The 0 V charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and VM pin at which VCO goes to “H” (VVM +0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of V1 = V2 = 0 V. (20) 0 V Battery Charge Inhibition Battery Voltage (Products with 0 V Battery Charging Function Is “Unavailable”) (Test Condition 12, Test Circuit 2) The 0 V charge inhibition charger voltage (V0INH) is defined as the voltage between the VDD pin and VSS pin at which VCO goes to “H” (VVM +0.1 V or higher) when the voltage V1 is gradually increased from the starting conditions of V1 = 0 V, V2 = −4 V. Seiko Instruments Inc. 17 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series R1 = 220 Ω V1 VSS DO CO Rev.5.0_00 VDD S-8211C Series VM IDD A V1 VDD S-8211C Series VSS DO CO VM V VDO COM V VCO COM V VDO V VCO V2 Figure 5 Test Circuit 1 Figure 6 Test Circuit 2 IDD A V1 VDD S-8211C Series VSS DO CO VM A IVM V2 V1 VDD S-8211C Series VSS DO A IDO V4 CO A ICO V3 VM V2 COM COM Figure 7 Test Circuit 3 Figure 8 Test Circuit 4 VDD V1 VSS DO CO S-8211C Series VM Oscilloscope COM Oscilloscope V2 Figure 9 Test Circuit 5 18 Seiko Instruments Inc. Rev.5.0_00 Operation BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Remark Refer to the “Battery Protection IC Connection Example”. 1. Normal Status This IC monitors the voltage of the battery connected between the VDD pin and VSS pin and the voltage difference between the VM pin and VSS pin to control charging and discharging. When the battery voltage is in the range from overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin voltage is in the range from the charge overcurrent detection voltage (VCIOV) to discharge overcurrent detection voltage (VDIOV), the IC turns both the charging and discharging control FETs on. This condition is called the normal status, and in this condition charging and discharging can be carried out freely. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected in the normal status. Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short the VM pin and VSS pin or connect the charger to restore the normal status. 2. Overcharge Status When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211C Series turns the charging control FET off to stop charging. This condition is called the overcharge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected in the overcharge status. The overcharge status is released in the following two cases ( (1) and (2) ). (1) In the case that the VM pin voltage is higher than or equal to the charge overcurrent detection voltage (VCIOV), and is lower than the discharge overcurrent detection voltage (VDIOV), S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge release voltage (VCL). (2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV), S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge detection voltage (VCU). The discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more than the voltage at VSS pin due to the Vf voltage of the parasitic diode, because the discharge current flows through the parasitic diode in the charging control FET. If this VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV), S-8211C Series releases the overcharge status when the battery voltage is lower than or equal to the overcharge detection voltage (VCU). For the actual application boards, changing the battery voltage and the charger voltage simultaneously enables to measure the overcharge release voltage (VCL). In this case, the charger is always necessary to have the equivalent voltage level to the battery voltage. The charger keeps VM pin voltage higher than or equal to the charge overcurrent detection voltage (VCIOV) and lower than or equal to the discharge overcurrent detection voltage (VDIOV). S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge release voltage (VCL). Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is connected, discharge overcurrent detection and load short-circuiting detection do not function until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery has an internal impedance of tens of mΩ, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and discharge overcurrent detection and load shortcircuiting detection function. 2. When a charger is connected after overcharge detection, the overcharge status is not released even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is released when the VM pin voltage goes over the charge overcurrent detection voltage (VCIOV) by removing the charger. Seiko Instruments Inc. 19 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series 3. Overdischarge Status Rev.5.0_00 When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211C Series turns the discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the IC (RVMD). When voltage difference between the VM pin and VDD pin then is 1.3 V (Typ.) or lower, the current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down status. The resistance (RVMS) between the VM pin and VSS pin is not connected in the power-down status and the overdischarge status. The power-down status is released when a charger is connected and the voltage difference between the VM pin and VDD pin becomes 1.3 V (typ.) or higher. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower than -0.7 V (Typ.), the S-8211C Series releases the overdischarge status and turns the discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower than -0.7 V (Typ.), the S-8211C Series releases the overdischarge status when the battery voltage reaches overdischarge release voltage (VDU) or higher. 4. Discharge Overcurrent Status (Discharge Overcurrent, Load Short-circuiting) When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the discharge overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for the discharge overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped. This status is called the discharge overcurrent status. In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the IC. However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is connected. When the load is disconnected, the VM pin returns to the VSS potential. This IC detects the status when the impedance between the EB+ pin and EB− pin (Refer to the Figure 14) increases and is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to discharge overcurrent detection voltage (VDIOV) or lower, the discharge overcurrent status is restored to the normal status. Even if the connected impedance is smaller than automatic restoration level, the S-8211C Series will be restored to the normal status from discharge overcurrent detection status when the voltage at the VM pin becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger. The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge overcurrent detection status. 20 Seiko Instruments Inc. Rev.5.0_00 5. Charge Overcurrent Status BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series When a battery in the normal status is in the status where the voltage of the VM pin is lower than the charge overcurrent detection voltage because the charge current is higher than the specified value and the status lasts for the charge overcurrent detection delay time, the charge control FET is turned off and charging is stopped. This status is called the charge overcurrent status. This IC will be restored to the normal status from the charge overcurrent status when, the voltage at the VM pin returns to charge overcurrent detection voltage (VCIOV) or higher by removing the charger. The charge overcurrent detection function does not work in the overdischarge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected in the charge overcurrent status. 6. 0 V Battery Charging Function “Available” This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB− pins by connecting a charger, the charging control FET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turnon voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the S8211C Series enters the normal status. Caution 1. Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charging function. 2. The 0 V battery charge function has higher priority than the charge overcurrent detection function. Consequently, a product in which use of the 0 V battery charging function is enabled charges a battery forcibly and the charge overcurrent cannot be detected when the battery voltage is lower than overdischarge detection voltage (VDL). 7. 0 V Battery Charging Function “Unavailable” This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or higher, charging can be performed. Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charging function. Seiko Instruments Inc. 21 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series 8. Delay Circuit The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter. Rev.5.0_00 Remark 1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time (tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load shortcircuiting detection voltage (VSHORT) is detected over the load short-circuiting detection delay time (tSHORT) after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211C turns the discharging control FET off within tSHORT from the time of detecting VSHORT. VDD DO Pin tD VSS Load short-circuiting detection delay time (tSHORT) VDD VSHORT VM Pin VDIOV VSS Time 0 ≤ tD ≤ tSHORT Time Figure 10 2. When any overcurrent is detected and the overcurrent continues for longer than the overdischarge detection delay time (tDL) without the load being released, the status changes to the power-down status at the point where the battery voltage falls below overdischarge detection voltage (VDL). When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time is still lower than the overdischarge detection voltage, S-8211C Series shifts to the power-down status. 22 Seiko Instruments Inc. Rev.5.0_00 Timing Chart BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (1) Overcharge Detection, Overdischarge Detection VCU VCL (VCU − VHC) Battery voltage VDU (VDL + VHD) VDL DO pin voltage VDD VSS VDD CO pin voltage VSS VEB− VDD VM pin voltage VDIOV VSS VCIOV VEB− Charger connection Load connection Overcharge detection delay time (tCU) Mode *1 Overdischarge detection delay time (tDL) (1) (3) (1) (1) (2) *1. (1) : Normal mode (2) : Overcharge mode (3) : Overdischarge mode Remark The charger is assumed to charge with a constant current. Figure 11 Seiko Instruments Inc. 23 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (2) Discharge Overcurrent Detection Rev.5.0_00 VCU VCL (VCU − VHC ) Battery voltage VDU (VDL + VHD ) VDL VDD DO pin voltage VSS VDD CO pin voltage VSS VDD VM pin voltage VSHORT VDIOV VSS Load short-circuiting detection delay time (tSHORT) (1) (2) (1) Load connection Discharge overcurrent detection delay time (tDIOV) Mode * 1 (1) (2) *1. (1) : Normal mode (2) : Discharge overcurrent mode Remark The charger is assumed to charge with a constant current. Figure 12 24 Seiko Instruments Inc. Rev.5.0_00 (3) Charge Overcurrent Detection BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series VCU VCL (VCU − VHC ) Battery voltage VDU(VDL + VHD ) VDL VDD DO pin voltage VSS VDD CO pin voltage VSS VEB− VDD VM pin voltage VSS VCIOV VEB− Charger connection Load connection Charge overcurrent detection delay time (tCIOV) (2) (1) Mode *1 Overdischarge detection delay time(tDL) Charge overcurrent detection delay time (tCIOV) (2) (1) (3) (1) *1. (1) : Normal mode (2) : Charge overcurrent mode (3) : Overdischarge mode Remark The charger is assumed to charge with a constant current. Figure 13 Seiko Instruments Inc. 25 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Battery Protection IC Connection Example R1 Battery C1 EB+ VDD S-8211C Series VSS Rev.5.0_00 DO FET1 CO FET2 VM R2 EB− Figure 14 Table 17 Constants for External Components Remark Threshold voltage ≤ Overdischarge *1 detection voltage N-channel Discharge control − − − FET1 MOS FET Gate to source withstanding voltage ≥ *2 Charger voltage Threshold voltage ≤ Overdischarge detection voltage *1 N-channel Charge control − − − FET2 MOS FET Gate to source withstanding voltage ≥ *2 Charger voltage Resistance should be as small as possible to avoid lowering the ESD protection, 220 Ω 100 Ω 330 Ω R1 Resistor overcharge detection accuracy due to For power fluctuation current consumption. *3 Connect a capacitor of 0.022 µF or C1 Capacitor For power fluctuation 0.1 µF 0.022 µF 1.0 µF higher between VDD pin and VSS pin. *4 Protection for reverse Select as large a resistance as possible R2 Resistor connection of a 2 kΩ 300 Ω 2 kΩ to prevent current when a charger is *5 connected in reverse. charger *1. If the threshold voltage of an FET is low, the FET may not cut the charging current. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected. *2. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. *3. If R1 has a high resistance, the voltage between VDD pin and VSS pin may exceed the absolute maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 100 Ω or higher as R1 for ESD protection. *4. If a capacitor of less than 0.022 µF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be sure to connect a capacitor of 0.022 µF or higher to C1. *5. If R2 has a resistance higher than 2 kΩ, the charging current may not be cut when a high-voltage charger is connected. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant. Symbol Part Purpose Typ. Min. Max. 26 Seiko Instruments Inc. Rev.5.0_00 Precautions BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series • The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. Seiko Instruments Inc. 27 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Characteristics (Typical Data) 1. Current Consumption (1) IOPE vs. Ta (2) IPDN vs. Ta Rev.5.0_00 6 IOPE [µA] IPDN [µA] 5 4 3 2 1 0 −40 −25 0 25 Ta [°C] 50 75 85 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −40 −25 0 25 Ta [°C] 50 7585 (3) IOPE vs. VDD 6 IOPE [µA] 5 4 3 2 1 0 0 2 4 VDD [V] 6 8 2. Overcharge Detection / Release Voltage, Overdischarge Detection / Release Voltage, Overcurrent Detection Voltage, and Delay Time (1) VCU vs. Ta (2) VCL vs. Ta 4.350 4.345 4.340 4.335 4.330 4.325 4.320 4.315 4.310 4.305 4.300 −40 −25 0 25 Ta [°C] 50 75 85 4.125 4.115 4.105 4.095 4.085 4.075 4.065 4.055 4.045 4.035 4.025 −40 −25 VCU [V] VCL [V] 0 25 Ta [°C] 50 75 85 (3) VDU vs. Ta (4) VDL vs. Ta 2.95 2.94 2.93 2.92 2.91 2.90 2.89 2.88 2.87 2.86 2.85 −40 −25 0 25 50 Ta [°C] 75 85 2.60 2.58 2.56 2.54 2.52 2.50 2.48 2.46 2.44 2.42 2.40 −40 −25 VDU [V] VDL [V] 0 25 Ta [°C] 50 75 85 28 Seiko Instruments Inc. Rev.5.0_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (5) tCU vs. Ta (6) tCL vs. Ta 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 −40 −25 0 25 Ta [°C] 50 7585 50 48 46 44 42 40 38 36 34 32 30 −40 −25 tCU [s] tCL [s] 0 25 Ta [°C] 50 7585 (7) tDU vs. Ta (8) tDL vs. Ta 2.85 2.75 2.65 2.55 2.45 2.35 2.25 2.15 2.05 1.95 1.85 −40 −25 0 25 Ta [°C] 50 7585 200 190 180 170 160 150 140 130 120 110 100 −40 −25 tDU [ms] tDL [ms] 0 25 Ta [°C] 50 7585 (9) VDIOV vs. Ta (10) tDIOV vs. VDD 0.175 0.170 0.165 0.160 0.155 0.150 0.145 0.140 0.135 0.130 0.125 −40 −25 0 25 Ta [°C] 50 75 85 14 13 12 11 10 9 8 7 6 5 4 3.0 VDIOV [V] tDIOV [ms] 3.5 VDD [V] 4.0 4.5 (11) tDIOV vs. Ta (12) VCIOV vs. Ta 14 13 12 11 10 9 8 7 6 5 4 −40 −25 0 25 Ta [°C] 50 75 85 −0.05 −0.06 −0.07 −0.08 −0.09 −0.10 −0.11 −0.12 −0.13 −0.14 −0.15 −40 −25 tDIOV [ms] VCIOV [V] 0 25 Ta [°C] 50 7585 Seiko Instruments Inc. 29 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (13) tCIOV vs. VDD (14) tCIOV vs. Ta Rev.5.0_00 14 13 12 11 10 9 8 7 6 5 4 3.0 3.5 VDD [V] 4.0 4.5 14 13 12 11 10 9 8 7 6 5 4 −40 −25 tCIOV [ms] tCIOV [ms] 0 25 Ta [°C] 50 75 85 (15) VSHORT vs. Ta (16) tSHORT vs. VDD 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 −40 −25 0 25 50 Ta [°C] 7585 0.65 0.63 0.61 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 3.0 tSHORT [ms] VSHORT [V] 3.5 VDD [V] 4.0 4.5 (17) tSHORT vs. Ta 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −40 −25 tSHORT [ms] 0 25 50 Ta [°C] 7585 3. CO pin / DO pin (1) ICOH vs. VCO (2) ICOL vs. VCO 0 −0.1 ICOH [mA] −0.2 −0.3 −0.4 −0.5 0 1 2 VCO [V] 3 4 0.5 0.4 ICOL [mA] 0.3 0.2 0.1 0 0 1 2 VCO [V] 3 4 30 Seiko Instruments Inc. Rev.5.0_00 (3) IDOH vs. VDO BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series (4) IDOL vs. VDO IDOH [mA] −0.15 −0.20 −0.25 −0.30 0 1 2 VDO [V] 3 4 IDOL [mA] 0 −0.05 −0.10 0.20 0.15 0.10 0.05 0 0 0.5 1.0 VDO [V] 1.5 Seiko Instruments Inc. 31 BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series Marking Specifications (1) SOT-23-5 SOT-23-5 Top view Rev.5.0_00 5 4 (1) to (3): (4) : Product Code (refer to Product Name vs. Product Code) Lot number (1) (2) (3) (4) 1 2 3 Product Name vs. Product Code Product Name Product Code (1) (2) (3) S-8211CAA-M5T1G R Z A S-8211CAB-M5T1G R Z B S-8211CAD-M5T1G R Z D S-8211CAE-M5T1G R Z E S-8211CAF-M5T1G R Z F S-8211CAH-M5T1G R Z H S-8211CAI-M5T1G R Z I S-8211CAJ-M5T1G R Z J S-8211CAK-M5T1G R Z K S-8211CAL-M5T1G R Z L S-8211CAM-M5T1G R Z M S-8211CAN-M5T1G R Z N S-8211CAO-M5T1G R Z O S-8211CAP-M5T1G R Z P S-8211CAQ-M5T1G R Z Q S-8211CAR-M5T1G R Z R S-8211CAS-M5T1G R Z S S-8211CAT-M5T1G R Z T S-8211CAU-M5T1G R Z U S-8211CAV-M5T1G R Z V S-8211CAY-M5T1G R Z Y S-8211CAZ-M5T1G R Z Z Remark Please contact our sales office for the products other than those specified above. 32 Seiko Instruments Inc. Rev.5.0_00 (2) SNT-6A SNT-6A To p view BATTERY PROTECTION IC FOR 1-CELL PACK S-8211C Series 1 (1) (2) (3) (4) (5) (6) 6 5 4 (1) to (3): (4) to (6): Product Code (refer to Product Name vs. Product Code) Lot number 2 3 Product Name vs. Product Code Product Name Product Code (1) (2) (3) S-8211CAA-I6T1G R Z A S-8211CAB-I6T1G R Z B S-8211CAD-I6T1G R Z D S-8211CAE-I6T1G R Z E S-8211CAF-I6T1G R Z F S-8211CAH-I6T1G R Z H S-8211CAI-I6T1G R Z I S-8211CAJ-I6T1G R Z J S-8211CAK-I6T1G R Z K S-8211CAL-I6T1G R Z L S-8211CAM-I6T1G R Z M S-8211CAN-I6T1G R Z N S-8211CAO-I6T1G R Z O S-8211CAP-I6T1G R Z P S-8211CAQ-I6T1G R Z Q S-8211CAR-I6T1G R Z R S-8211CAS-I6T1G R Z S S-8211CAT-I6T1G R Z T S-8211CAU-I6T1G R Z U S-8211CAV-I6T1G R Z V S-8211CAW-I6T1G R Z W S-8211CAX-I6T1G R Z X S-8211CAY-I6T1G R Z Y S-8211CBA-I6T1G R 7 A S-8211CBB-I6T1G R 7 B S-8211CBD-I6T1G R 7 D S-8211CBN-I6T1G R 7 N S-8211CBO-I6T1G R 7 O S-8211CBR-I6T1G R 7 R Remark Please contact our sales office for the products other than those specified above. Seiko Instruments Inc. 33 2.9±0.2 1.9±0.2 5 4 1 2 3 0.16 -0.06 +0.1 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SCALE UNIT SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 0.25±0.1 ø1.0 -0 +0.2 4.0±0.1 1.4±0.2 3.2±0.2 321 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE No. SCALE UNIT SOT235-A-Carrier Tape MP005-A-C-SD-2.1 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. MP005-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT235-A-Reel MP005-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 1.57±0.03 6 5 4 1 2 3 +0.05 0.08 -0.02 0.48±0.02 0.5 0.2±0.05 No. PG006-A-P-SD-2.0 TITLE No. SCALE UNIT SNT-6A-A-PKG Dimensions PG006-A-P-SD-2.0 mm Seiko Instruments Inc. ø1.5 -0 +0.1 2.0±0.05 4.0±0.1 0.25±0.05 1.85±0.05 5° ø0.5 -0 +0.1 4.0±0.1 0.65±0.05 321 4 56 Feed direction No. PG006-A-C-SD-1.0 TITLE No. SCALE UNIT SNT-6A-A-Carrier Tape PG006-A-C-SD-1.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. PG006-A-R-SD-1.0 TITLE No. SCALE UNIT mm SNT-6A-A-Reel PG006-A-R-SD-1.0 QTY. 5,000 Seiko Instruments Inc. 0.52 1.36 0.52 0.3 0.2 0.3 0.2 0.3 Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff. No. PG006-A-L-SD-3.0 TITLE No. SCALE UNIT SNT-6A-A-Land Recommendation PG006-A-L-SD-3.0 mm Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.