S-8241ADVMC-GDVT2G

Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series The S-8241 Series is a series of lithium ion/lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits and delay circuits. These ICs are suitable for protection of 1-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent. Features Internal high-accuracy voltage detection circuit • Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step) Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C) • Overcharge release voltage: 3.8 to 4.4 V *1 Accuracy of ±50 mV • Overdischarge detection voltage: 2.0 to 3.0 V (100 mV-step) Accuracy of ±80 mV *2 Accuracy of ±100 mV • Overdischarge release voltage: 2.0 to 3.4 V • Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV • Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy of ±100 mV (2) A high voltage withstand device is used for charger connection pins (VM and CO pins: Absolute maximum rating = 26 V) (3) Delay times (overcharge: tCU; overdischarge: tDL; overcurrent 1: tlOV1; overcurrent 2: tlOV2) are generated by an internal circuit. (External capacitors are unnecessary.) Accuracy of ±30% (4) Internal three-step overcurrent detection circuit (overcurrent 1, overcurrent 2, and load short-circuiting) (5) Either the 0 V battery charging function or 0 V battery charge inhibiting function can be selected. (6) Products with and without a power-down function can be selected. (7) Charger detection function and abnormal charge current detection function • The overdischarge hysterisis is released by detecting a negative VM pin voltage (typ. −1.3 V) (Charger detection function). • If the output voltage at DO pin is high and the VM pin voltage becomes equal to or lower than the charger detection voltage (typ. −1.3 V), the output voltage at CO pin goes low (Abnormal charge current detection function). (8) Low current consumption • Operation: 3.0 μA typ. 5.0 μA max. • Power-down mode: 0.1 μA max. (9) Wide operating temperature range: −40 to +85 °C (10) Small package SOT-23-5, SNT-6A (11) Lead-free products *1. Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis The overcharge hysteresis can be selected in the range 0.0, or 0.1 to 0.4 V in 50 mV steps. (However, selection “Overcharge release voltage3.4 V” is enabled.) (1) Applications • Lithium-ion rechargeable battery packs • Lithium- polymer rechargeable battery packs Packages Package name SOT-23-5 SNT-6A Drawing code Package MP005-A PG006-A Tape MP005-A PG006-A Reel MP005-A PG006-A Land ⎯ PG006-A Seiko Instruments Inc. 1 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Block Diagram Rev.7.6_00 Delay circuit Clock generation circuit VDD DO Load short-circuiting detection circuit Counter circuit − + Overcharge detection comparator Level conversion circuit 0V battery charging circuit 0V battery charge inhibition circuit CO RCOL Overdischarge detection comparator + − The overdischarge hysterisis is released when a charger is detected. Charger detection circuit RVMD + − Overcurrent 1 detection comparator RVMS VM + − Overcurrent 2 detection comparator VSS Remark The diodes in the IC are parasitic diodes. Figure 1 2 Seiko Instruments Inc. Rev.7.6_00 Product Name Structure 1. Product Name S-8241A xx xx - xxx xx G BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series IC direction in tape specifications *1 T2 : SOT-23-5 TF : SNT-6A Product code*2 P ackage code MC : SOT-23-5 PG : SNT-6A Serial code Sequentially set from BA to ZZ *1. Refer to the taping specifications. *2. Refer to the “2. Product Name List”. Seiko Instruments Inc. 3 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 2. Product Name List (1) SOT-23-5 Table 1 (1/2) Overcharge detection voltage VCU 4.275 V 4.280 V 4.350 V 4.275 V 4.295 V 4.325 V 4.200 V 4.325 V 4.280 V 4.325 V 4.320 V 4.350 V 4.350 V 4.280 V 4.325 V 4.300 V 4.200 V 4.295 V 4.280 V 4.350 V 4.220 V 4.280 V 4.300 V 4.275 V 4.295 V 4.295 V 4.295 V 4.280 V 4.350 V 4.350 V 4.200 V 4.350 V 4.100 V 4.325 V 4.275 V 4.350 V 4.180 V Overcharge release voltage VCL 4.075 V 3.980 V 4.100 V 4.175 V 4.095 V 4.075 V 4.100 V 4.125 V 4.080 V 4.075 V 4.070 V 4.150 V 4.150 V 4.080 V 4.075 V 4.100 V 4.100 V 4.095 V 4.080 V 4.000 V 4.220 V 4.080 V 4.100 V 4.075 V 4.095 V 4.095 V 4.095 V 4.080 V 4.150 V 4.150 V 4.200 V 4.150 V 3.850 V 4.075 V 4.175 V 4.150 V 3.930 V Overdischarge detection voltage VDL 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.50 V 2.50 V 2.30 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.05 V 2.00 V 2.50 V 2.10 V 2.50 V 2.50 V 2.30 V 2.30 V 2.50 V Overdischarge release voltage VDU 2.90 V 2.40 V 2.80 V 2.40 V 3.00 V 2.90 V 3.00 V 2.30 V 2.30 V 2.90 V 2.90 V 3.00 V 3.00 V 2.30 V 2.90 V 2.30 V 2.30 V 2.30 V 2.30 V 3.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.75 V 2.00 V 3.00 V 2.20 V 2.90 V 2.90 V 2.40 V 3.00 V 2.90 V Overcurrent 1 detection voltage VIOV1 0.100 V 0.125 V 0.075 V 0.100 V 0.200 V 0.100 V 0.100 V 0.100 V 0.160 V 0.150 V 0.100 V 0.150 V 0.200 V 0.130 V 0.100 V 0.100 V 0.150 V 0.130 V 0.130 V 0.200 V 0.200 V 0.200 V 0.150 V 0.100 V 0.080 V 0.090 V 0.060 V 0.200 V 0.200 V 0.200 V 0.100 V 0.200 V 0.150 V 0.150 V 0.100 V 0.100 V 0.150 V Delay time combination*1 (1) (2) (1) (1) (1) (1) (1) (1) (1) (1) (1) (2) (2) (1) (4) (1) (1) (1) (3) (1) (3) (1) (1) (4) (1) (1) (1) (1) (2) (2) (1) (2) (1) (1) (1) (1) (1) Product Name / Item 0 V battery charging function Unavailable Available Unavailable Available Unavailable Unavailable Unavailable Available Unavailable Unavailable Unavailable Available Available Unavailable Unavailable Available Unavailable Available Unavailable Unavailable Available Available Available Unavailable Available Available Available Available Available Available Available Available Unavailable Unavailable Available Available Unavailable Power down function S-8241ABAMC-GBAT2G S-8241ABBMC-GBBT2G S-8241ABCMC-GBCT2G S-8241ABDMC-GBDT2G S-8241ABEMC-GBET2G S-8241ABFMC-GBFT2G S-8241ABGMC-GBGT2G S-8241ABHMC-GBHT2G S-8241ABIMC-GBIT2G S-8241ABKMC-GBKT2G S-8241ABLMC-GBLT2G S-8241ABOMC-GBOT2G S-8241ABPMC-GBPT2G S-8241ABQMC-GBQT2G S-8241ABRMC-GBRT2G S-8241ABTMC-GBTT2G S-8241ABUMC-GBUT2G S-8241ABVMC-GBVT2G S-8241ABWMC-GBWT2G S-8241ABXMC-GBXT2G S-8241ABYMC-GBYT2G S-8241ACAMC-GCAT2G S-8241ACBMC-GCBT2G S-8241ACDMC-GCDT2G S-8241ACEMC-GCET2G S-8241ACFMC-GCFT2G S-8241ACGMC-GCGT2G S-8241ACHMC-GCHT2G S-8241ACIMC-GCIT2G S-8241ACKMC-GCKT2G S-8241ACLMC-GCLT2G S-8241ACNMC-GCNT2G S-8241ACOMC-GCOT2G S-8241ACPMC-GCPT2G S-8241ACQMC-GCQT2G S-8241ACRMC-GCRT2G S-8241ACSMC-GCST2G Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes No No No No No 4 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Table 1 (2/2) Overcharge detection voltage VCU 4.100 V 4.180 V 4.275 V 4.275 V 4.350 V 4.185 V 4.350 V 4.350 V 4.275 V 4.220 V 4.230 V 4.250 V 4.275 V 4.250 V 4.180 V Overcharge release voltage VCL 4.000 V 4.080 V 4.075 V 4.075 V 4.150 V 4.085 V 4.150 V 4.150 V 4.075 V 4.070 V 4.080 V 4.100 V 4.175 V 4.100 V 4.180 V Overdischarge detection voltage VDL 2.50 V 2.50 V 2.50 V 2.60 V 2.30 V 2.80 V 2.10 V 2.10 V 2.10 V 2.70 V 2.70 V 2.70 V 2.30 V 2.00 V 2.50 V Overdischarge release voltage VDU 2.90 V 2.90 V 2.90 V 2.90 V 3.00 V 2.90 V 2.20 V 2.10 V 2.10 V 3.00 V 3.00 V 3.00 V 2.40 V 2.70 V 3.00 V Overcurrent 1 detection voltage VIOV1 0.150 V 0.150 V 0.150 V 0.100 V 0.100 V 0.150 V 0.150 V 0.150 V 0.150 V 0.300 V 0.300 V 0.300 V 0.100 V 0.150 V 0.100 V Delay time combination*1 (1) (1) (1) (1) (1) (1) (2) (5) (5) (1) (1) (1) (1) (1) (1) Product Name / Item 0 V battery charging function Unavailable Unavailable Unavailable Unavailable Available Unavailable Available Unavailable Unavailable Available Available Available Unavailable Available Available Power down function S-8241ACTMC-GCTT2G S-8241ACUMC-GCUT2G S-8241ACXMC-GCXT2G S-8241ACYMC-GCYT2G S-8241ADAMC-GDAT2G S-8241ADDMC-GDDT2G S-8241ADEMC-GDET2G S-8241ADFMC-GDFT2G S-8241ADGMC-GDGT2G S-8241ADLMC-GDLT2G S-8241ADMMC-GDMT2G S-8241ADNMC-GDNT2G S-8241ADOMC-GDOT2G S-8241ADQMC-GDQT2G S-8241ADTMC-GDTT2G No No No No Yes Yes Yes Yes Yes Yes Yes Yes No Yes Yes S-8241ADVMC-GDVT2G 3.900 V 3.900 V 2.00 V 2.30 V 0.150 V Available (1) Yes *1. Refer to the Table 3 about the details of the delay time combinations (1) to (5). Remark Please contact our sales office for the products with detection voltage value other than those specified above. Seiko Instruments Inc. 5 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (2) SNT-6A Table 2 Overcharge detection voltage VCU 4.275 V 4.350 V 4.275 V 4.350 V 4.350 V Overcharge release voltage VCL 4.175 V 4.150 V 4.075 V 4.150 V 4.150 V Overdischarge detection voltage VDL 2.30 V 2.35 V 2.30 V 2.70 V 2.10 V Overdischarge release voltage VDU 2.40 V 2.65 V 2.40 V 2.70 V 2.10 V Overcurrent 1 detection voltage VIOV1 0.100 V 0.200 V 0.140 V 0.200 V 0.150 V Delay time combination*1 (1) (2) (1) (2) (5) Rev.7.6_00 Product Name / Item 0 V battery charging function Available Available Available Unavailable Unavailable Power down function S-8241ABDPG-KBDTFG S-8241ABSPG-KBSTFG S-8241ABZPG-KBZTFG S-8241ACZPG-KCZTFG S-8241ADFPG-KDFTFG Yes Yes Yes Yes Yes S-8241ADHPG-KDHTFG 4.250 V 4.050 V 2.40 V 2.90 V 0.100 V Available (1) No *1. Refer to the Table 3 about the details of the delay time combinations (1) to (5). Remark Please contact our sales office for the products with detection voltage value other than those specified above. 6 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Table 3 Delay time combination (1) (2) (3) (4) (5) Overcharge detection delay time tCU 1.0 s 0.125 s 0.25 s 2.0 s 0.25 s Overdischarge detection delay time tDL 125 ms 31 ms 125 ms 125 ms 31 ms Overcurrent 1 detection delay time tlOV1 8 ms 16 ms 8 ms 8 ms 16 ms Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office. Table 4 Delay time Symbol Selection range Remarks Select a value from the left. Select a value from the left. Select a value from the left. Overcharge detection delay time tCU 0.25 s 0.5 s 1.0 s 2.0 s Overdischarge detection delay time tDL 31 ms 62.5 ms 125 ms ⎯ Overcurrent 1 detection delay time tlOV1 4 ms 8 ms 16 ms ⎯ Remark The value surrounded by bold lines is the delay time of the standard products. Seiko Instruments Inc. 7 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Pin Configurations S OT-23-5 Top view Table 5 Rev.7.6_00 5 4 Pin No. 1 2 3 4 5 Symbol VM VDD VSS DO CO Description Voltage detection pin between VM and VSS (Overcurrent detection pin) Positive power input pin Negative power input pin FET gate connection pin for discharge control (CMOS output) FET gate connection pin for charge control (CMOS output) 1 2 Figure 2 3 SNT-6A Top view 1 2 3 6 5 4 Table 6 Pin No. 1 Symbol NC*1 Description Figure 3 No connection FET gate connection pin for charge control 2 CO (CMOS output) FET gate connection pin for discharge control 3 DO (CMOS output) 4 VSS Negative power input pin 5 VDD Positive power input pin Voltage detection pin between VM and VSS 6 VM (Overcurrent detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 8 Seiko Instruments Inc. Rev.7.6_00 Absolute Maximum Ratings BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Table 7 Item Input voltage between VDD and VSS VM input pin voltage CO output pin voltage DO output pin voltage Power dissipation SOT-23-5 Symbol VDS VVM VCO VDO PD Topr Applicable pin VDD VM CO DO ⎯ ⎯ ⎯ (Ta = 25 °C unless otherwise specified) Rating Unit VSS −0.3 to VSS +12 VDD −26 to VDD +0.3 VVM −0.3 to VDD +0.3 VSS −0.3 to VDD +0.3 250 (When not mounted on board) *1 600 *1 400 −40 to +85 −40 to +125 V V V V mW mW mW °C °C SNT-6A Operation ambient temperature Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Diss pation (PD ) [mW] 600 500 400 300 200 100 0 0 100 150 50 Ambient Temperature ( Ta) [° C] SOT-23-5 SNT-6A Figure 4 Power Dissipation of Package (When Mounted on Board) Seiko Instruments Inc. 9 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Electrical Characteristics 1. Other than detection delay time (25 °C) Table 8 Item DETECTION VOLTAGE Overcharge detection voltage VCU = 3.9 to 4.4 V, 5 mV Step Symbol Condition ⎯ Ta = -5 to +55 °C*1 When VCL ≠ VCU When VCL = VCU Min. VCU-0.025 VCU-0.030 VCL-0.050 VCL-0.025 Typ. VCU VCU VCL VCL Rev.7.6_00 (Ta = 25 °C unless otherwise specified) Test Test Max. Unit Condition Circuit VCU+0.025 VCU+0.030 VCL+0.050 VCL+0.025 V 1 1 VCU Overcharge release voltage VCL V 1 1 VCU−VCL = 0 to 0.4 V, 50 mV Step Overdischarge detection voltage VDL VDL-0.080 VDL VDL+0.080 V 1 1 ⎯ VDL = 2.0 to 3.0 V, 100 mV Step Overdischarge release voltage VDU-0.100 VDU VDU+0.100 When VDU ≠ VDL V V 1 1 VDU−VDL = 0 to 0.7 V, 100 mV Step DU When VDU = VDL VDU-0.080 VDU VDU+0.080 Overcurrent 1 detection voltage VIOV1 VIOV1-0.020 VIOV1 VIOV1+0.020 V 2 1 ⎯ VIOV1 = 0.05 to 0.3V, 5 mV Step Overcurrent 2 detection voltage VIOV2 0.4 0.5 0.6 V 2 1 ⎯ Load short-circuiting detection VSHORT VM voltage based on VDD -1.7 -1.3 -0.9 V 2 1 voltage Charger detection voltage VCHA -2.0 -1.3 -0.6 V 3 1 ⎯ Overcharge detection voltage TCOE1 Ta = -5 to +55 °C -0.5 0 0.5 mV/°C ⎯ ⎯ temperature factor *1 Overcurrent 1 detection voltage TCOE2 Ta = -5 to +55 °C -0.1 0 0.1 mV/°C ⎯ ⎯ *1 temperature factor INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VDS1 absolute maximum rating -0.3 12 V ⎯ ⎯ ⎯ VSS Input voltage between VDD and VDS2 absolute maximum rating -0.3 26 V ⎯ ⎯ ⎯ VM Operating voltage between VDD 8 VDSOP1 Internal circuit operating voltage 1.5 V ⎯ ⎯ ⎯ and VSS Operating voltage between VDD VDSOP2 Internal circuit operating voltage 1.5 24 V ⎯ ⎯ ⎯ and VM CURRENT CONSUMPTION Power-down function available Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.0 5.0 4 1 μA normal operation Current consumption at power IPDN VDD = VVM = 1.5 V 0.1 4 1 ⎯ ⎯ μA down CURRENT CONSUMPTION Power-down function unavailable Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.0 5.0 4 1 μA normal operation Overdischarge current IOPED VDD = VVM = 1.5 V 1.0 2.0 3.5 4 1 μA consumption OUTPUT RESISTANCE CO pin H resistance RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.1 2 10 6 1 kΩ CO pin L resistance RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 150 600 2400 6 1 kΩ DO pin H resistance RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.1 1.3 6.0 7 1 kΩ DO pin L resistance RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 0.1 0.5 2.0 7 1 kΩ VM INTERNAL RESISTANCE Internal resistance between VM RVMD VDD = 1.8 V, VVM = 0 V 100 300 900 5 1 kΩ and VDD Internal resistance between VM RVMS VDD = VVM = 3.5 V 50 100 150 5 1 kΩ and VSS 0 V BATTERY CHARGING FUNCTION The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function" depending upon the product type. 0 V battery charge starting charger V0CHA 0 V battery charging Available 0.0 0.8 1.5 V 10 1 voltage 0 V battery charge inhibiting V0INH 0 V battery charging Unavailable 0.6 0.9 1.2 V 11 1 battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 10 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series 2. Other than detection delay time (-40 to +85 °C*1) Table 9 Item Symbol Condition Min. (Ta = -40 to +85 °C*1 unless otherwise specified) Test Test Typ. Max. Unit Condition Circuit DETECTION VOLTAGE Overcharge detection voltage VCU VCU-0.055 VCU VCU+0.040 V 1 1 ⎯ VCU = 3.9 to 4.4 V, 5 mV Step Overcharge release voltage VCL-0.095 VCL VCL+0.060 When VCL ≠ VCU V V 1 1 VCU −VCL = 0 to 0.4 V, 50 mV Step CL When VCL = VCU VCL-0.055 VCL VCL+0.040 Overdischarge detection voltage VDL VDL-0.120 VDL VDL+0.120 V 1 1 ⎯ VDL = 2.0 to 3.0 V, 100 mV Step Overdischarge release voltage VDU-0.140 VDU VDU+0.140 When VDU ≠ VDL V V 1 1 VDU−VDL = 0 to 0.7 V, 100 mV Step DU When VDU = VDL VDU-0.120 VDU VDU+0.120 Overcurrent 1 detection voltage VIOV1 VIOV1-0.026 VIOV1 VIOV1+0.026 V 2 1 ⎯ VIOV1 = 0.05 to 0.3V, 5 mV Step Overcurrent 2 detection voltage VIOV2 0.37 0.5 0.63 V 2 1 ⎯ Load short-circuiting detection VSHORT VM voltage based on VDD -1.9 -1.3 -0.7 V 2 1 voltage Charger detection voltage VCHA -2.2 -1.3 -0.4 V 3 1 ⎯ Overcharge detection voltage TCOE1 Ta = -40 to +85 °C -0.7 0 0.7 mV/°C ⎯ ⎯ *1 temperature factor Overcurrent 1 detection voltage TCOE2 Ta = -40 to +85 °C -0.2 0 0.2 mV/°C ⎯ ⎯ temperature factor *1 INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VDS1 absolute maximum rating -0.3 12 V ⎯ ⎯ ⎯ VSS Input voltage between VDD and VDS2 absolute maximum rating -0.3 V 26 ⎯ ⎯ ⎯ VM Operating voltage between VDD VDSOP1 Internal circuit operating voltage 1.5 8 V ⎯ ⎯ ⎯ and VSS Operating voltage between VDD VDSOP2 Internal circuit operating voltage 1.5 24 V ⎯ ⎯ ⎯ and VM CURRENT CONSUMPTION Power-down function available Current consumption during 4 1 IOPE VDD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA normal operation Current consumption at power IPDN VDD = VVM = 1.5 V 0.1 4 1 ⎯ ⎯ μA down CURRENT CONSUMPTION Power-down function unavailable Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 4 1 μA normal operation Overdischarge current 4 1 IOPED VDD = VVM = 1.5 V 0.6 2.0 4.5 μA consumption OUTPUT RESISTANCE 6 1 CO pin H resistance RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.07 2 13 kΩ CO pin L resistance RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 100 600 3500 6 1 kΩ DO pin H resistance RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.07 1.3 7.3 7 1 kΩ DO pin L resistance RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 0.07 0.5 2.5 7 1 kΩ VM INTERNAL RESISTANCE Internal resistance between VM RVMD VDD = 1.8 V, VVM = 0 V 78 300 1310 5 1 kΩ and VDD Internal resistance between VM RVMS VDD = VVM = 3.5 V 39 100 220 5 1 kΩ and VSS 0 V BATTERY CHARGING FUNCTION The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function" depending upon the product type. 0 V battery charge starting charger V0CHA 0 V battery charging Available 0.0 0.8 1.7 V 10 1 voltage 0 V battery charge inhibiting V0INH 0 V battery charging Unavailable 0.4 0.9 1.4 V 11 1 battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 11 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 3 Detection delay time (1) S-8241ABA, S-8241ABC, S-8241ABD, S-8241ABE, S-8241ABF, S-8241ABG, S-8241ABH, S-8241ABI, S-8241ABK, S-8241ABL, S-8241ABQ, S-8241ABT, S-8241ABU, S-8241ABV, S-8241ABX, S-8241ABZ, S-8241ACA, S-8241ACB, S-8241ACE, S-8241ACF, S-8241ACG, S-8241ACH, S-8241ACL, S-8241ACO, S-8241ACP, S-8241ACQ, S-8241ACR, S-8241ACS, S-8241ACT, S-8241ACU, S-8241ACX, S-8241ACY, S-8241ADA, S-8241ADD, S-8241ADH, S-8241ADL, S-8241ADM, S-8241ADN, S-8241ADO, S-8241ADQ, S-8241ADT, S-8241ADV Table 10 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ 0.55 69 4.4 1.1 ⎯ 1.0 125 8 2 10 1.7 212 14 3.4 73 s ms ms ms μs 8 8 9 9 9 1 1 1 1 1 Symbol Condition ⎯ ⎯ ⎯ ⎯ ⎯ Min. Typ. Max. Unit Test Test Condition Circuit 8 8 9 9 9 1 1 1 1 1 tCU tDL tlOV1 tlOV2 tSHORT 0.7 87.5 5.6 1.4 ⎯ 1.0 125 8 2 10 1.3 162.5 10.4 2.6 50 s ms ms ms μs *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. (2) S-8241ABB, S-8241ABO, S-8241ABP, S-8241ABS, S-8241ACI, S-8241ACK, S-8241ACN, S-8241ACZ, S-8241ADE Table 11 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time DELAY TIME (Ta = −40 to +85 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1 Symbol Condition ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min. Typ. Max. Unit Test Test Condition Circuit 8 8 9 9 9 8 8 9 9 9 1 1 1 1 1 1 1 1 1 1 tCU tDL tlOV1 tlOV2 tSHORT tCU tDL tIOV1 tIOV2 tSHORT 87.5 21 11 1.4 ⎯ 69 17 9 1.1 ⎯ 125 31 16 2 10 125 31 16 2 10 162.5 41 21 2.6 50 212 53 27 3.4 73 ms ms ms ms μs ms ms ms ms μs *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 12 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (3) S-8241ABW, S-8241ABY Table 12 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ 0.138 69 4.4 1.1 ⎯ 0.25 125 8 2 10 0.425 212 14 3.4 73 s ms ms ms μs 8 8 9 9 9 1 1 1 1 1 Symbol Condition ⎯ ⎯ ⎯ ⎯ ⎯ Min. Typ. Max. Unit Test Test Condition Circuit 8 8 9 9 9 1 1 1 1 1 tCU tDL tlOV1 tlOV2 tSHORT 0.175 87.5 5.6 1.4 ⎯ 0.25 125 8 2 10 0.325 162.5 10.4 2.6 50 s ms ms ms μs *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. (4) S-8241ABR, S-8241ACD Table 13 Item DELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ 1.1 69 4.4 1.1 ⎯ 2.0 125 8 2 10 3.4 212 14 3.4 73 s ms ms ms μs 8 8 9 9 9 1 1 1 1 1 Symbol Condition ⎯ ⎯ ⎯ ⎯ ⎯ Min. Typ. Max. Unit Test Test Condition Circuit 8 8 9 9 9 1 1 1 1 1 tCU tDL tlOV1 tlOV2 tSHORT 1.4 87.5 5.6 1.4 ⎯ 2.0 125 8 2 10 2.6 162.5 10.4 2.6 50 s ms ms ms μs *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 13 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 (5) S-8241ADF, S-8241ADG Table 14 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25 °C) Overcharge detection delay time tCU ⎯ 0.175 0.25 0.325 ms 8 1 Overdischarge detection delay time tDL ⎯ 21 31 41 ms 8 1 Overcurrent 1 detection delay time tlOV1 ⎯ 11 16 21 ms 9 1 Overcurrent 2 detection delay time tlOV2 ⎯ 1.4 2 2.6 ms 9 1 Load short-circuiting detection delay time tSHORT ⎯ ⎯ 10 50 μs 9 1 DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time tCU ⎯ 0.138 0.25 0.425 s 8 1 Overdischarge detection delay time tDL ⎯ 17 31 53 ms 8 1 Overcurrent 1 detection delay time tIOV1 ⎯ 9 16 27 ms 9 1 Overcurrent 2 detection delay time tIOV2 ⎯ 1.1 2 3.4 ms 9 1 Load short-circuiting detection delay time tSHORT ⎯ ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 14 Seiko Instruments Inc. Rev.7.6_00 Test Circuits Caution BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS. (1) Test Condition 1, Test Circuit 1 (Overcharge detection voltage, Overcharge release voltage, Overdischarge detection voltage, Overdischarge release voltage) The overcharge detection voltage (VCU) is defined by the voltage between VDD and VSS at which VCO goes “L” from “H” when the voltage V1 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V. The overcharge release voltage (VCL) is defined by the voltage between VDD and VSS at which VCO goes “H” from “L” when the voltage V1 is then gradually decreased. Gradually decreasing the voltage V1, the overdischarge detection voltage (VDL) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H”. The overdischarge release voltage (VDU) is defined by the voltage between VDD and VSS at which VDO goes “H” from “L” when the voltage V1 is then gradually increased. (2) Test Condition 2, Test Circuit 1 (Overcurrent 1 detection voltage, Overcurrent 2 detection voltage, Load short-circuiting detection voltage) The overcurrent 1 detection voltage (VIOV1) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V. The overcurrent 2 detection voltage (VIOV2) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is increased at the speed between 1 ms and 4 ms from the normal condition V1 = 3.5 V and V2 = 0 V. The load short-circuiting detection voltage (VSHORT) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is increased at the speed between 1 μs and 50 μs from the normal condition V1 = 3.5 V and V2 = 0 V. (3) Test Condition 3, Test Circuit 1 (Charger detection voltage, ( = abnormal charge current detection voltage) ) • Applied only for products with overdischarge hysteresis Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Increase V1 gradually, set V1 = (VDU+VDL) / 2 (within overdischarge hysteresis, overdischarge condition), then decrease V2 from 0 V gradually. The voltage between VM and VSS at which VDO goes “H” from “L” is the charger detection voltage (VCHA). • Applied only for products without overdischarge hysteresis Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V gradually. The voltage between VM and VSS at which VCO goes “L” from “H” is the abnormal charge current detection voltage. The abnormal charge current detection voltage has the same value as the charger detection voltage (VCHA). (4) Test Condition 4, Test Circuit 1 (Normal operation current consumption, Power-down current consumption, Overdischarge current consumption) Set V1 = 3.5 V and V2 = 0 V under normal condition. The current IDD flowing through VDD pin is the normal operation consumption current (IOPE). • For products with power-down function Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the power-down current consumption (IPDN). • For products without power-down function Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the overdischarge current consumption (IOPED). Seiko Instruments Inc. 15 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 (5) Test Condition 5, Test Circuit 1 (Internal resistance between VM and VDD, Internal resistance between VM and VSS) Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Measure current IVM flowing through VM pin. 1.8V / |IVM| gives the internal resistance (RVMD) between VM and VDD. Set V1 = V2 = 3.5 V under overcurrent condition. Measure current IVM flowing through VM pin. 3.5 V / |IVM| gives the internal resistance (RVMS) between VM and VSS. (6) Test Condition 6, Test Circuit 1 (CO pin H resistance, CO pin L resistance) Set V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V under normal condition. Measure current ICO flowing through CO pin. 0.5 V / |ICO| is the CO pin H resistance (RCOH). Set V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V under overcharge condition. Measure current ICO flowing through CO pin. 0.5 V / |ICO| is the CO pin L resistance (RCOL). (7) Test Condition 7, Test Circuit 1 (DO pin H resistance, DO pin L resistance) Set V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V under normal condition. Measure current IDO flowing through DO pin. 0.5 V / |IDO| gives the DO pin H resistance (RDOH). Set V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V under overdischarge condition. Measure current IDO flowing through DO pin. 0.5 V / |IDO| gives the DO pin L resistance (RDOL). (8) Test Condition 8, Test Circuit 1 (Overcharge detection delay time, Overdischarge detection delay time) Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V1 gradually to overcharge detection voltage VCU - 0.2 V and increase V1 to the overcharge detection voltage VCU + 0.2 V momentarily (within 10 μs). The time after V1 becomes the overcharge detection voltage until VCO goes "L" is the overcharge detection delay time (tCU). Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V1 gradually to overdischarge detection voltage VDL + 0.2 V and decrease V1 to the overdischarge detection voltage VDL - 0.2 V momentarily (within 10 μs). The time after V1 becomes the overdischarge detection voltage VDL until VDO goes "L" is the overdischarge detection delay time (tDL). (9) Test Condition 9, Test Circuit 1 (Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay time, Abnormal charge current detection delay time) Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 μs). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes "L" is overcurrent 1 detection delay time (tIOV1). Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (within 1 μs). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes "L" is overcurrent 2 detection delay time (tIOV2). Caution The overcurrent 2 detection delay time starts when the overcurrent 1 is detected, since the delay circuit is common. Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (within 1 μs). The time after V2 becomes the load short-circuiting detection voltage (VSHORT) until VDO goes "L" is the load short-circuiting detection delay time (tSHORT). Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within 10 μs). The time after V2 becomes the charger detection voltage (VCHA) until VCO goes "L" is the abnormal charge current detection delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay time. 16 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (10) Test Condition 10, Test Circuit 1 (Product with 0 V battery charging function) (0 V battery charge start charger voltage) Set V1 = V2 = 0 V and decrease V2 gradually. The voltage between VDD and VM at which VCO goes “H” (VVM + 0.1 V or higher) is the 0 V battery charge start charger voltage (V0CHA). (11) Test Condition 11, Test Circuit 1 (Product with 0 V battery charge inhibiting function) (0 V battery charge inhibiting battery voltage) Set V1 = 0 V and V2 = -4 V. Increase V1 gradually. The voltage between VDD and VSS at which VCO goes “H” (VVM + 0.1 V or higher) is the 0 V battery charge inhibiting battery voltage (V0INH). IDD A V1 VDD S-8241 Series VSS VM DO CO A IVM V2 IDO V4 COM A V VDO VCO V A ICO V3 Test circuit 1 Figure 5 Seiko Instruments Inc. 17 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Operation Remark Refer to the “ Battery Protection IC Connection Example”. Rev.7.6_00 1. Normal Condition The S-8241 monitors the voltage of the battery connected to VDD and VSS pins and the voltage difference between VM and VSS pins to control charging and discharging. When the battery voltage is in the range from the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the range from the charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1) (the current flowing through the battery is equal to or lower than a specified value), the IC turns both the charging and discharging control FETs on. This condition is called normal condition and in this condition charging and discharging can be carried out freely. 2. Overcurrent Condition When the discharging current becomes equal to or higher than a specified value (the VM pin voltage is equal to or higher than the overcurrent detection voltage) during discharging under normal condition and the state continues for the overcurrent detection delay time or longer, the S-8241 turns the discharging control FET off to stop discharging. This condition is called overcurrent condition. (The overcurrent includes overcurrent 1, overcurrent 2, or load short-circuiting.) The VM and VSS pins are shorted internally by the RVMS resistor under the overcurrent condition. When a load is connected, the VM pin voltage equals the VDD voltage due to the load. The overcurrent condition returns to the normal condition when the load is released and the impedance between the EB+ and EB- pins (see the Figure 12 for a connection example) becomes higher than the automatic recoverable impedance (see the equation [1] below). When the load is removed, the VM pin goes back to the VSS potential since the VM pin is shorted the VSS pin with the RVMS resistor. Detecting that the VM pin potential is lower than the overcurrent 1 detection voltage (VIOV1), the IC returns to the normal condition. Automatic recoverable impedance = {Battery voltage / (Minimum value of overcurrent 1 detection voltage) − 1} x (RVMS maximum value) --- [1] Example: Battery voltage = 3.5 V and overcurrent 1 detection voltage (VIOV1) = 0.1 V Automatic recoverable impedance = (3.5 V / 0.07 V −1) x 200 kΩ = 9.8 MΩ Remark The automatic recoverable impedance varies with the battery voltage and overcurrent 1 detection voltage settings. Determine the minimum value of the open load using the above equation [1] to have automatic recovery from the overcurrent condition work after checking the overcurrent 1 detection voltage setting for the IC. 18 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series 3. Overcharge Condition When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal condition and the state continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging control FET off to stop charging. This condition is called the overcharge condition. The overcharge condition is released in the following two cases ((1) and (2)) depending on the products with and without overcharge hysteresis: Products with overcharge hysteresis (overcharge detection voltage (VCU) > overcharge release voltage (VCL)) (1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turns the charging control FET on and returns to the normal condition. (2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the normal condition. The release mechanism is as follows: the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. The IC detects this voltage (being higher than the overcurrent 1 detection voltage) and releases the overcharge condition. Consequently, in the case that the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the IC returns to the normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage (VCU), the IC does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) even if the load is connected. In addition if the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the IC does not return to the normal condition. Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not drop below the overcharge detection voltage (VCU) even when a heavy load, which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery voltage drops below the overcharge detection voltage (VCU). Since an actual battery has, however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage. Products without overcharge hysteresis (Overcharge detection voltage (VCU) = Overcharge release voltage (VCL)) (1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turn the charging control FET on and returns to the normal condition. (2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the normal condition. The release mechanism is explained as follows : the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. Detecting this voltage (being higher than the overcurrent 1 detection voltage), the IC increases the overcharge detection voltage about 50 mV, and releases the overcharge condition. Consequently, when the battery voltage is equal to or lower than the overcharge detection voltage (VCU) + 50 mV, the S-8241 immediately returns to the normal condition. But the battery voltage is higher than the overcharge detection voltage (VCU) + 50 mV, the S-8241 does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) + 50 mV even if a load is connected. If the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the S-8241 does not return to the normal condition. Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not drop below the overcharge detection voltage (VCU) + 50 mV even when a heavy load, which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery voltage drops bellow the overcharge detection voltage (VCU) + 50 mV. Since an actual battery has, however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage. Seiko Instruments Inc. 19 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 4. Overdischarge Condition With power-down function When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging control FET off and stops discharging. This condition is called overdischarge condition. After the discharging control FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. Meanwhile the potential difference between VM and VDD drops below 1.3 V (typ.) (the load short-circuiting detection voltage), current consumption of the IC is reduced to the power-down current consumption (IPDN). This condition is called power-down condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge and power-down conditions. The power-down condition is released when a charger is connected and the potential difference between VM and VDD becomes 1.3 V (typ.) or higher (load short-circuiting detection voltage). At this time, the FET is still off. When the battery voltage becomes the overdischarge detection voltage (VDL) or higher*1, the S-8241 turns the FET on and changes to the normal condition from the overdischarge condition. *1. If the VM pin voltage is no less than the charger detection voltage (VCHA), when the battery under overdischarge condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, provided that the battery voltage reaches the overdischarge release voltage (VDU) or higher. Without power-down function When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging control FET off and stops discharging. When the discharging control FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. Meanwhile the potential difference between VM and VDD drops below 1.3 V (typ.) (the load short-circuiting detection voltage), current consumption of the IC is reduced to the overdischarge current consumption (IOPED). This condition is called overdischarge condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge condition. When a charger is connected, the overdischarge condition is released in the same way as explained above in respect to products having the power-down function. For products without the power-down function, in addition, even if the charger is not connected, the S-8241 turns the discharging control FET on and changes to the normal condition from the overdischarge condition provided that the load is disconnected and that the potential difference between VM and VSS drops below the overcurrent 1 detection voltage (VIOV1), since the VM pin is pulled down by the RVMS resistor between VM and VSS in the IC when the battery voltage reaches the overdischarge release voltage (VDU) or higher. 5. Charger Detection If the VM pin voltage is lower than the charger detection voltage (VCHA) when a battery in overdischarge condition is connected to a charger, overdischarge hysteresis is released, and when the battery voltage becomes equal to or higher than the overdischarge detection voltage (VDL), the overdischarge condition is released (the discharging control FET is turned on). This action is called charger detection. (The charger detection reduces the time for charging in which charging current flows through the internal parasitic diode in the discharging control FET) . If the VM pin voltage is not lower than the charger detection voltage (VCHA) when a battery in overdischarge condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, when the battery voltage reaches the overdischarge release voltage (VDU) or higher. 20 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series 6. Abnormal Charge Current Detection If the VM pin voltage drops below the charger detection voltage (VCHA) during charging under the normal condition and it continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging control FET off and stops charging. This action is called abnormal charge current detection. Abnormal charge current detection works when the discharging control FET is on (DO pin voltage is “H”) and the VM pin voltage drops below the charger detection voltage (VCHA). When an abnormal charge current flows into a battery in the overdischarge condition, the S-8241 consequently turns the charging control FET off and stops charging after the battery voltage becomes the overdischarge detection voltage or higher (DO pin voltage becomes “H”) and the overcharge detection delay time (tCU) elapses. Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes lower than the charger detection voltage (VCHA) by separating the charger. Since the 0 V battery charging function has higher priority than the abnormal charge current detection function, abnormal charge current may not be detected by the product with the 0 V battery charging function while the battery voltage is low. 7. Delay Circuits The detection delay times are determined by dividing a clock of approximately 2 kHz by the counter. [Example] Overcharge detection delay time (= abnormal charge current detection delay time): 1.0 s Overdischarge detection delay time: 125 ms Overcurrent 1 detection delay time: 8 ms Overcurrent 2 detection delay time: 2 ms Caution 1. Counting for the overcurrent 2 detection delay time starts when the overcurrent 1 is detected. Having detected the overcurrent 1, if the overcurrent 2 is detected after the overcurrent 2 detection delay time, the S-8241 turns the discharging control FET off as shown in the Figure 6. In this case, the overcurrent 2 detection delay time may seem to be longer or overcurrent 1 detection delay time may seem to be shorter than expected. VDD D O pin VSS T ime Overcurrent 2 detection delay time (tIOV2) VDD VIOV2 VM p in VIOV1 VSS Time Figure 6 Seiko Instruments Inc. 21 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 2. After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is held for the overdischarge detection delay time or longer without releasing the load, the condition changes to the power-down condition when the battery voltage drops below the overdischarge detection voltage. If the battery voltage drops below the overdischarge detection voltage due to overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the power-down condition. After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is held for the overdischarge detection delay time or longer without releasing the load, the condition changes to the overdischarge condition when the battery voltage drops below the overdischarge detection voltage. If the battery voltage drops below the overdischarge detection voltage due to overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the overdischarge condition. 8. 0 V Battery Charging Function This function enables the charging of a connected battery whose voltage is 0 V by self-discharge. When a charger having 0 V battery start charging charger voltage (V0CHA) or higher is connected between EB+ and EB- pins, the charging control FET gate is fixed to VDD potential. When the voltage between the gate and the source of the charging control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the overdischarge release voltage (VDU), the normal condition returns. Caution 1. Some battery providers do not recommend charging of completely discharged batteries. Please refer to battery providers before the selection of 0 V battery charging function. 2. The 0 V battery charging function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0 V battery charging function charges a battery and abnormal charge current cannot be detected during the battery voltage is low (at most 1.8 V or lower). 3. When a battery is connected to the IC for the first time, the IC may not enter the normal condition in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage (short the VM and VSS pins or connect a charger) to enter the normal condition. 9. 0 V Battery Charge Inhibiting Function This function forbids the charging of a connected battery which is short-circuited internally (0 V battery). When the battery voltage becomes 0.9 V (typ.) or lower, the charging control FET gate is fixed to EB- potential to forbid charging. Charging can be performed, when the battery voltage is the 0 V battery charge inhibiting voltage (V0INH) or higher. Caution 1. Some battery providers do not recommend charging of completely discharged batteries. Please refer to battery providers before the selection of 0 V battery charging function. 2. When a battery is connected to the IC for the first time, the IC may not enter the normal condition in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage (short the VM and VSS pins or connect a charger) to enter the normal condition. 22 Seiko Instruments Inc. Rev.7.6_00 Timing Chart BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (1) Overcharge and overdischarge detection (for products with power-down function) VCU VCL B a tte ry v oltag e VDU VDL VDD D O pin V SS VDD C O p in VS S VDD V M p in V IOV 1 V SS V C HA C har ger conn ected Loa d conn ected Ove rchar ge de te ctio n del ay time (t CU ) O ve rdisch arge d etection d elay ti me (t DL) M ode (1 ) (2 ) (1) (3 ) (1) N ote: (1) Norm al m ode, (2) Ov erc harge m ode, (3) Ov erdisc harge mode, (4) Overcurrent m ode T he charger is as sumed to c harge with a c onstant c urrent. Figure 7 (2) Overcharge and overdischarge detection (for products without power-down function) VCU VCL B atte r y vo lta g e VDU VDL V D O p in V DD SS VDD C O pin V SS V DD V M p in V IO V 1 V SS V CH A C ha rge r c on nec t ed Lo ad c on nec t ed O v erc ha rge d et ec ti on de lay tim e ( tC U ) O v erdi sc h arg e det ec t ion d ela y t im e (t D L ) O v erd is c harg e det ec t io n dela y t im e (t D L ) M ode (1 ) (2 ) (1 ) ( 3) (1 ) (3 ) (1 ) N o te : (1 ) N o rm a l m o d e , ( 2 ) O ve r ch a r g e m o d e , ( 3 ) O ve r d is ch a r g e m o d e , (4 ) O v e rc u rr e n t m o d e T h e ch a r g e r is a ssu m e d to c h a r g e wi th a co n st a n t cu r re n t. Figure 8 Seiko Instruments Inc. 23 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (3) Overcurrent detection VCU VCL Rev.7.6_00 Battery voltage VDU VDL VDD DO pin VSS CO pin VDD VSS VDD VSHORT VIOV2 VIOV1 VSS VM pin Charger connection Load connection Overcurrent 1 detection delay time (tIOV1) Overcurrent 2 detection delay time (tIOV2) Load short-circuiting detection delay time (t SHORT) Mode (1) (4) (1) (4) (1) (4) (1) Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with constant current. Figure 9 (4) Charger detection VCU VCL VDU VDL VDD VSS Battery voltage DO pin CO pin VDD VSS VM pin VDD VSS VCHA Charger connection Load connection Overdischarge detection delay time (tDL) If VM pin voltage < VCHA Overdischarge is released at overdischarge detection voltage (VDL) Mode (1) (3) (1) Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with constant current. Figure 10 24 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series (5) Abnormal charge current detection VCU VCL VDU VDL VDD Battery voltage DO pin VSS CO pin VDD VSS VDD VSS VCHA VM pin Charger connection Load connection Abnormal charging current detection delay time Overdischarge detection delay time (tDL) ( = Overcharge detection delay time (tCU)) Mode (1) (3) (1) (2) (1) Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with constant current. Figure 11 Seiko Instruments Inc. 25 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Battery Protection IC Connection Example R1 : 470 Ω VDD Battery C1 : 0.1 μF EB+ Rev.7.6_00 S-8241 Series VSS DO CO VM R2 : 1 kΩ FET1 FET2 EB− Figure 12 Table 15 Constants for External Components Remarks 0.4 V ≤ Threshold voltage ≤ Nch overdischarge detection voltage. *1 FET1 Discharge control ⎯ ⎯ ⎯ MOS_FET Withstand voltage between gate and *2 source ≥ Charger voltage 0.4 V ≤ Threshold voltage ≤ Nch overdischarge detection voltage. *1 FET2 Charge control ⎯ ⎯ ⎯ MOS_FET Withstand voltage between gate and *2 source ≥ Charger voltage Protection for ESD and Relation R1 ≤ R2 should be R1 Resistor R2 value 470 Ω 300 Ω power fluctuation maintained.*3 Protection for power Install a capacitor of 0.01 μF or C1 Capacitor 0.1 μF 0.01 μF 1.0 μF fluctuation higher between VDD and VSS. *4 To suppress current flow caused by reverse connection of a charger, set the Protection for charger R2 Resistor 1 kΩ 300 Ω 1.3 kΩ reverse connection resistance within the range from 300 Ω to *5 1.3 kΩ. *1. If an FET with a threshold voltage of 0.4 V or lower is used, the FET may fail to cut the charging current. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may stop before overdischarge is detected. *2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may break. *3. If R1 has a higher resistance than R2 and if a charger is connected reversely, current flows from the charger to the IC and the voltage between VDD and VSS may exceed the absolute maximum rating. Install a resistor of 300 Ω or higher as R1 for ESD protection. If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption. *4. If a capacitor C1 is less than 0.01 μF, DO may oscillate when load short-circuiting is detected, a charger is connected reversely, or overcurrent 1 or 2 is detected. A capacitor of 0.01 μF or higher as C1 should be installed. In some types of batteries DO oscillation may not stop unless the C1 capacity is increased. Set the C1 capacity by evaluating the actual application. *5. If R2 is set to less than 300 Ω, a current which is bigger than the power dissipation flows through the IC and the IC may break when a charger is connected reversely. If a resistor bigger than 1.3 kΩ is installed as R2, the charging current may not be cut when a high-voltage charger is connected. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant. Symbol Parts Purpose Typ. min. max. 26 Seiko Instruments Inc. Rev.7.6_00 Precautions BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series • Pay attention to the operating conditions for input/output voltage and load current so that the power loss in the IC does not exceed the power dissipation of the package. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. Seiko Instruments Inc. 27 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 Characteristics (Typical Data) 1. Detection/release voltage temperature characteristics Overcharge detection voltage vs. temperature Overcharge release voltage vs. temperature 4.33 4.31 4.23 4.21 VCU (V) 4.27 4.25 4.23 -50 VCL (V) -25 0 25 50 75 100 4.29 4.19 4.17 4.15 4.13 -50 -25 0 25 50 75 100 Ta(°C) Overdischarge detection voltage vs. temperature Ta(°C) Overdischarge release voltage vs. temperature 2.40 2.36 2.50 2.46 2.28 2.24 2.20 -50 -25 0 25 50 75 100 VDU (V) VDL (V) 2.32 2.42 2.38 2.34 2.30 -50 -25 0 25 50 75 100 Ta(°C) Overcurrent 1 detection voltage vs. temperature Ta(°C) Overcurrent 2 detection voltage vs. temperature 0.110 0.105 0.60 0.55 VIOV1 (V) 0.100 0.095 0.090 -50 VIOV2 (V) 0.50 0.45 0.40 -25 0 25 50 75 100 -50 -25 0 25 50 75 100 Ta(°C) Ta(°C) 2. Current consumption temperature characteristics Current consumption vs. Temperature in normal mode Current consumption vs. Temperature in power-down mode 6 5 0.10 0.08 IOPE (μA) IPDN (μA) -50 -25 0 25 50 Ta(°C) 75 100 4 3 2 1 0 0.06 0.04 0.02 0.00 -50 -25 0 25 50 75 100 Ta(°C) 28 Seiko Instruments Inc. Rev.7.6_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series 3. Current consumption Power voltage characteristics (Ta = 25 °C) Current consumption − power supply volatge dependency VM = VSS 20 15 10 5 0 0 2 4 6 8 10 IOPE (μA) VDD(V) 4. Detection/release delay time temperature characteristics Overcharge detection delay time vs. temperature Overcharge release delay time vs. temperature 2.0 1.5 1.0 0.8 tCL (ms) tCU (s) 1.0 0.5 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 0.0 -50 -25 0 25 50 75 100 Ta(°C) Overdischarge detection delay time vs. temperature Ta(°C) Overdischarge release delay time vs. temperature 250 200 150 100 50 0 -50 -25 0 25 50 75 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 tDL (ms) tCU (s) Ta(°C) Overcurrent 1 detection delay time vs. temperature Ta(°C) Overcurrent 1 release delay time vs. temperature 16 12 8 4 0 -50 -25 0 25 50 75 100 500 tIOV1 (μs) Release 400 300 200 100 0 -50 -25 0 25 50 75 100 tIOV1 (ms) Ta(°C) Ta(°C) Seiko Instruments Inc. 29 BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series Rev.7.6_00 Overcurrent 2 detection delay time vs. temperature Load short-circuiting delay time vs. temperature 4 50 tSHORT (μs) -50 -25 0 25 50 75 100 tIOV2 (ms) 3 2 1 0 40 30 20 10 0 -50 -25 0 25 50 75 100 Ta(°C) Ta(°C) Overcurrent 2 detection delay time vs. power supply voltage dependency 5. Delay time power-voltage characteristics (Ta = 25 °C) Overcurrent 1 detection delay time vs. power supply voltage dependency 16 4 tIOV1 (ms) 8 4 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 tIOV2 (ms) 12 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDD(V) 6. CO pin/DO pin output current characteristics (Ta = 25 °C) CO pin source current characteristics VDD = 3.5 V, VSS = VM = 0 V VDD(V) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 12 10 CO pin sink current characteristics VDD = 4.5 V, VSS = VM = 0 V ICO (mA) ICO (μA) 8 6 4 2 0 0 1 2 3 4 0 1 2 3 4 5 VCO(V) DO pin source current characteristics VDD = 3.5 V, VSS = VM = 0 V VCO(V) DO pin sink current characteristics VDD = 1.8 V, VSS = VM = 0 V -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 2.5 2.0 IDO (mA) IDO (mA) 1.5 1.0 0.5 0.0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 VDO(V) VDO(V) 30 Seiko Instruments Inc. 2.9±0.2 1.9±0.2 5 4 1 2 3 0.16 -0.06 +0.1 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SCALE UNIT SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 0.25±0.1 ø1.0 -0 +0.2 4.0±0.1 1.4±0.2 3.2±0.2 321 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE No. SCALE UNIT SOT235-A-Carrier Tape MP005-A-C-SD-2.1 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. MP005-A-R-SD-1.1 TITLE No. SCALE UNIT mm SOT235-A-Reel MP005-A-R-SD-1.1 QTY. 3,000 Seiko Instruments Inc. 1.57±0.03 6 5 4 1 2 3 +0.05 0.08 -0.02 0.48±0.02 0.5 0.2±0.05 No. PG006-A-P-SD-2.0 TITLE No. SCALE UNIT SNT-6A-A-PKG Dimensions PG006-A-P-SD-2.0 mm Seiko Instruments Inc. ø1.5 -0 +0.1 2.0±0.05 4.0±0.1 0.25±0.05 1.85±0.05 5° ø0.5 -0 +0.1 4.0±0.1 0.65±0.05 321 4 56 Feed direction No. PG006-A-C-SD-1.0 TITLE No. SCALE UNIT SNT-6A-A-Carrier Tape PG006-A-C-SD-1.0 mm Seiko Instruments Inc. 12.5max. Enlarged drawing in the central part ø13±0.2 9.0±0.3 (60°) (60°) No. PG006-A-R-SD-1.0 TITLE No. SCALE UNIT mm SNT-6A-A-Reel PG006-A-R-SD-1.0 QTY. 5,000 Seiko Instruments Inc. 0.52 1.36 0.52 0.3 0.2 0.3 0.2 0.3 Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff. No. PG006-A-L-SD-3.0 TITLE No. SCALE UNIT SNT-6A-A-Land Recommendation PG006-A-L-SD-3.0 mm Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.