S-8261 Series
www.ablic.com
www.ablicinc.com
BATTERY PROTECTION IC FOR 1-CELL PACK
© ABLIC Inc., 2001-2016
Rev.5.4_03
The S-8261 Series is a lithium-ion / lithium polymer rechargeable battery protection IC incorporating high-accuracy voltage
detection circuit and delay circuits.
The S-8261 Series is suitable for protection of single-cell lithium-ion / lithium polymer battery packs from overcharge,
overdischarge and overcurrent.
Features
(1)
Internal high accuracy voltage detection circuit
Overcharge detection voltage
3.900 V to 4.500 V (applicable in 5 mV step) Accuracy: 25 mV (25C) and
30 mV (5C to 55C)
Overcharge hysteresis voltage
0.1 V to 0.4 V*1
Accuracy: 25 mV
The overcharge hysteresis voltage can be selected from the range 0.1 V to 0.4 V in 50 mV step.
Overdischarge detection voltage
2.000 V to 3.000 V (applicable in 10 mV step) Accuracy: 50 mV
Overdischarge hysteresis voltage 0.0 V to 0.7 V*2
Accuracy: 50 mV
The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.
Overcurrent 1 detection voltage
0.050 V to 0.300 V (applicable in 10 mV step) Accuracy: 15 mV
Overcurrent 2 detection voltage
0.500 V (fixed)
Accuracy: 100 mV
(2) High-withstand voltage (VM pin and CO pin: Absolute maximum rating 28 V)
(3) Delay times (overcharge: tCU, overdischarge: tDL, overcurrent 1: tlOV1, overcurrent 2: tlOV2) are generated by an
internal circuit. No external capacitor is necessary.
Accuracy: 20%
(4) Three-step overcurrent detection circuit is included (overcurrent 1, overcurrent 2 and load short-circuiting).
(5) 0 V battery charge function “Available” / “Unavailable” is selectable.
(6) Power-down function “Yes” / “No” is selectable.
(7) Charger detection function and abnormal charge current detection function
The overdischarge hysteresis is released by detecting negative voltage at the VM pin (0.7 V typ.) (Charger
detection function).
When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger
detection voltage (0.7 V typ.), the output voltage of the CO pin goes low (Abnormal charge current detection
function).
(8) Low current consumption
Operation mode
3.5 A typ., 7.0 A max.
Power-down mode
0.1 A max.
(9) Wide operating temperature range 40C to 85C
(10) Lead-free, Sn 100%, halogen-free*3
*1. Overcharge release voltage Overcharge detection voltage Overcharge hysteresis voltage (where overcharge
release voltage 3.8 V is prohibited.)
*2. Overdischarge release voltage Overdischarge detection voltage Overdischarge hysteresis voltage (where
overdischarge release voltage 3.4 V is prohibited.)
*3. Refer to “ Product Name Structure” for details.
Applications
Lithium-ion rechargeable battery packs
Lithium polymer rechargeable battery packs
Package
SOT-23-6
1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Block Diagram
DP
Output control circuit
0 V battery charge circuit
or 0 V battery charge
inhibition circuit
DO
Divider control
circuit
Oscillator control
circuit
VDD
＋
Charger detection circuit
CO
－
Overcharge
detection
comparator
＋
－
Overcurrent 1
detection comparator
RVMD
＋
VM
－
RVMS
＋
Overcurrent 2
detection comparator
Overdischarge
detection
comparator
＋
－
－
Load short-circuiting detection comparator
VSS
Remark All the diodes shown in the figure are parasitic diodes.
Figure 1
2
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Product Name Structure
1. Product Name
S-8261A xx
MD
-
xxx
T2
x
Environmental code
U: Lead-free (Sn 100%), halogen-free
S: Lead-free, halogen-free
G: Lead-free (for details, please contact our sales office)
IC direction in tape specifications*1
Product name (abbreviation)*2
Package name (abbreviation)
MD: SOT-23-6
Serial code
Assigned from AA to ZZ in alphabetical order
*1. Refer to the tape drawing.
*2. Refer to “3. Product Name List”.
2. Package
Package name
SOT-23-6
Package
MP006-A-P-SD
Drawing code
Tape
MP006-A-C-SD
Reel
MP006-A-R-SD
3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
3. Product Name List
Table 1 (1 / 2)
Product name
Overcharge Overcharge Overdischarge Overdischarge Overcurrent 1
detection
hysteresis
detection
hysteresis
detection
voltage
voltage
voltage
voltage
voltage
[VCU]
[VHC]
[VDL]
[VHD]
[VIOV1]
0 V battery
charge
function
Delay
time
combi*1
nation
S-8261AAGMD-G2GT2x
S-8261AAHMD-G2HT2x
S-8261AAJMD-G2JT2x
S-8261AALMD-G2LT2x
S-8261AAMMD-G2MT2x
S-8261AANMD-G2NT2x
S-8261AAOMD-G2OT2x
S-8261AAPMD-G2PT2x
S-8261AARMD-G2RT2x
S-8261AASMD-G2ST2x
S-8261AATMD-G2TT2x
S-8261AAUMD-G2UT2x
4.280 V
4.280 V
4.325 V
4.300 V
4.300 V
4.275 V
4.280 V
4.325 V
4.280 V
4.280 V
4.300 V
4.275 V
0.20 V
0.20 V
0.25 V
0.10 V
0.10 V
0.10 V
0.20 V
0.25 V
0.20 V
0.20 V
0.10 V
0.10 V
2.300 V
2.300 V
2.500 V
2.300 V
2.300 V
2.300 V
2.300 V
2.500 V
2.300 V
2.300 V
2.300 V
2.300 V
0V
0V
0.4 V
0V
0V
0.1 V
0V
0.4 V
0V
0V
0V
0.1 V
0.160 V
0.080 V
0.150 V
0.080 V
0.200 V
0.100 V
0.130 V
0.100 V
0.100 V
0.150 V
0.080 V
0.100 V
Available
Available
Unavailable
Unavailable
Unavailable
Available
Unavailable
Unavailable
Available
Unavailable
Available
Available
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(2)
(3)
(4)
S-8261AAXMD-G2XT2x
S-8261AAZMD-G2ZT2x
S-8261ABAMD-G3AT2x
S-8261ABBMD-G3BT2x
S-8261ABCMD-G3CT2x
S-8261ABIMD-G3IT2x
S-8261ABJMD-G3JT2x
S-8261ABKMD-G3KT2x
S-8261ABLMD-G3LT2x
S-8261ABMMD-G3MT2x
S-8261ABNMD-G3NT2x
S-8261ABPMD-G3PT2x
S-8261ABRMD-G3RT2x
S-8261ABSMD-G3ST2x
S-8261ABTMD-G3TT2x
S-8261ABYMD-G3YT2x
S-8261ABZMD-G3ZT2x
S-8261ACAMD-G4AT2x
S-8261ACBMD-G4BT2x
S-8261ACDMD-G4DT2x
S-8261ACEMD-G4ET2x
S-8261ACFMD-G4FT2x
S-8261ACHMD-G4HT2x
S-8261ACIMD-G4IT2x
S-8261ACJMD-G4JT2x
S-8261ACKMD-G4KT2x
4.350 V
4.280 V
4.350 V
4.275 V
4.300 V
4.275 V
4.280 V
4.100 V
4.275 V
4.280 V
4.300 V
4.200 V
4.275 V
4.280 V
4.280 V
4.275 V
4.325 V
4.280 V
4.250 V
4.350 V
3.900 V
4.280 V
4.465 V
4.250 V
4.275 V
4.280 V
0.10 V
0.25 V
0.20 V
0.20 V
0.20 V
0.20 V
0.20 V
0.25 V
0.20 V
0.20 V
0.20 V
0.10 V
0.20 V
0.10 V
0.20 V
0.10 V
0.25 V
0.20 V
0.20 V
0.25 V
0.10 V
0.20 V
0.30 V
0.20 V
0.10 V
0.20 V
2.300 V
2.500 V
2.500 V
2.300 V
2.300 V
2.300 V
3.000 V
2.500 V
2.300 V
2.800 V
2.300 V
2.800 V
2.500 V
2.500 V
3.000 V
2.300 V
2.500 V
2.300 V
2.600 V
2.300 V
2.000 V
2.300 V
2.100 V
2.400 V
2.300 V
2.800 V
0.1 V
0.4 V
0V
0V
0V
0V
0V
0.4 V
0V
0V
0V
0.1 V
0.4 V
0.5 V
0.4 V
0.1 V
0.4 V
0V
0.3 V
0.7 V
0.3 V
0V
0V
0.5 V
0.1 V
0V
0.100 V
0.100 V
0.200 V
0.130 V
0.130 V
0.200 V
0.080 V
0.150 V
0.050 V
0.100 V
0.060 V
0.150 V
0.150 V
0.180 V
0.080 V
0.100 V
0.150 V
0.130 V
0.120 V
0.250 V
0.100 V
0.100 V
0.150 V
0.100 V
0.150 V
0.130 V
Available
Unavailable
Available
Available
Available
Unavailable
Available
Unavailable
Unavailable
Available
Available
Unavailable
Unavailable
Unavailable
Available
Available
Unavailable
Unavailable
Unavailable
Available
Available
Available
Available
Available
Available
Available
(4)
(1)
(4)
(1)
(1)
(5)
(1)
(1)
(5)
(1)
(1)
(1)
(1)
(1)
(5)
(6)
(6)
(6)
(1)
(7)
(1)
(8)
(9)
(1)
(1)
(1)
Power-down
function
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
Yes
Yes
Yes
Yes
No
Yes
Yes
*1. Refer to the Table 2 about the details of the delay time combinations (1) to (9).
Remark 1.
2.
3.
4
Please contact our sales office for the products with detection voltage value other than those specified above.
x: G or U
Please select products of environmental code = U for Sn 100%, halogen-free products.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Table 1 (2 / 2)
Overcharge Overcharge Overdischarge Overdischarge Overcurrent 1
detection
hysteresis
detection
hysteresis
detection
voltage
voltage
voltage
voltage
voltage
[VCU]
[VHC]
[VDL]
[VHD]
[VIOV1]
Product name
S-8261ACMMD-G4MT2x
S-8261ACNMD-G4NT2x
S-8261ACSMD-G4ST2y
4.325 V
4.215 V
4.350 V
0.20 V
0.10 V
0.10 V
3.000 V
2.300 V
2.300 V
0.4 V
0.1 V
0.1 V
0.060 V
0.130 V
0.150 V
0 V battery
charge
function
Delay
time
combi*1
nation
Power-down
function
Unavailable
Unavailable
Available
(1)
(1)
(6)
Yes
Yes
Yes
*1. Refer to the Table 2 about the details of the delay time combinations (1) to (9).
Remark 1.
2.
3.
4.
Please contact our sales office for the products with detection voltage value other than those specified above.
x: G or U
y: S or U
Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 2
Delay time
combination
Overcharge
detection
delay time
[tCU]
Overdischarge
detection
delay time
[tDL]
Overcurrent 1
detection
delay time
[tlOV1]
Overcurrent 2
detection
delay time
[tlOV2]
Load short-circuiting
detection
delay time
[tSHORT]
(1)
1.2 s
144 ms
9 ms
2.24 ms
320 s
(2)
1.2 s
144 ms
4.5 ms
2.24 ms
320 s
(3)
4.6 s
36 ms
18 ms
9 ms
320 s
(4)
4.6 s
144 ms
9 ms
2.24 ms
320 s
(5)
1.2 s
36 ms
9 ms
2.24 ms
320 s
(6)
1.2 s
144 ms
9 ms
1.12 ms
320 s
(7)
1.2 s
290 ms
18 ms
2.24 ms
320 s
(8)
1.2 s
144 ms
18 ms
2.24 ms
320 s
(9)
0.3 s
36 ms
9 ms
1.12 ms
320 s
Remark The delay times can be changed within the range listed Table 3. For details, please contact our sales office.
Table 3
Delay time
Symbol
Overcharge detection delay time
tCU
Overdischarge detection delay time
tDL
Overcurrent 1 detection delay time
tlOV1
Overcurrent 2 detection delay time
tlOV1
Load short-circuiting detection delay time
tSHORT
*1. The value is the delay time of the standard products.
Selection range
1.2 s*1
0.15 s
144 ms*1
36 ms
9 ms*1
4.5 ms
2.24 ms*1
1.12 ms
320 s*1
Remarks
4.6 s
290 ms
18 ms
600 s
Choose from the left.
Choose from the left.
Choose from the left.
Choose from the left.
Choose from the left.
5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Pin Configuration
SOT-23-6
Top view
6 5 4
1
2
3
Figure 2
6
Table 4
Pin No.
Symbol
1
DO
2
VM
3
CO
4
5
6
DP
VDD
VSS
Description
FET gate control pin for discharge
(CMOS output)
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
FET gate control pin for charge
(CMOS output)
Test pin for delay time measurement
Positive power supply input pin
Negative power supply input pin
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Absolute Maximum Ratings
Table 5
Item
Symbol
Applied pin
VSS 0.3 to VSS 12
VDD 28 to VDD 0.3
VVM 0.3 to VDD0.3
VSS 0.3 to VDD 0.3
250 (When not mounted on board)
650*1
40 to 85
V
V
V
V
mW
mW
C
55 to 125
C
Input voltage between VDD and VSS
Input pin voltage for VM
Output pin voltage for CO
Output pin voltage for DO
VDS
VVM
VCO
VDO
VDD
VM
CO
DO
Power dissipation
PD
Operating ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size :
114.3 mm 76.2 mm t1.6 mm
(2) Board name : JEDEC STANDARD51-7
Caution
The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
(1) When mounted on board
(2) When not mounted on board
600
Power dissipation (PD) [mW]
700
Power dissipation (PD) [mW]
(Ta 25C unless otherwise specified)
Absolute Maximum Rating
Unit
600
500
400
300
200
100
0
0
100
150
50
Ambient temperature (Ta) [C]
500
400
300
200
100
0
0
150
100
50
Ambient temperature (Ta) [C]
Figure 3 Power Dissipation of Package
7
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Electrical Characteristics
1. Except Detection Delay Time (25C)
Table 6
Item
Symbol
Condition
Min.
(Ta 25C unless otherwise specified)
Test
Test
Typ.
Max.
Unit
Condition Circuit
DETECTION VOLTAGE
Overcharge detection voltage
VCU 3.900 V to 4.500 V, 5 mV Step
VCU
Ta 5C to 55C*1
VCU
0.025
VCU
0.030
VHC
0.025
VDL
0.050
VHD
0.050
VIOV1
0.015
0.400
0.900
1.0
VCU
VCU
VCU
0.025
VCU
0.030
VHC
0.025
VDL
0.050
VHD
0.050
VIOV1
0.015
0.600
1.500
0.4
V
1
1
V
1
1
Overcharge hysteresis voltage
VHC
V
1
1
VHC
VHC 0.1 V to 0.4 V, 50 mV Step
Overdischarge detection voltage
VDL
V
2
2
VDL
VDL 2.000 V to 3.000 V, 10 mV Step
Overdischarge hysteresis voltage
VHD
V
2
2
VHD
VHD 0.0 V to 0.7 V, 100 mV Step
Overcurrent 1 detection voltage
V
3
2
VIOV1
VIOV1
VIOV1 0.050 V to 0.300 V, 10 mV Step
Overcurrent 2 detection voltage
VIOV2
0.500
V
3
2
Load short-circuiting detection voltage
VSHORT
1.200
V
3
2
Charger detection voltage
VCHA
0.7
V
4
2
INPUT VOLTAGE, OPERATION VOLTAGE
Operation voltage between VDD and VSS VDSOP1 Internal circuit operating voltage
1.5
8
V
Operation voltage between VDD and VM
VDSOP2 Internal circuit operating voltage
1.5
28
V
CURRENT CONSUMPTION (with power-down function)
Current consumption in normal operation
IOPE
VDD 3.5 V, VVM 0 V
1.0
3.5
7.0
A
5
2
Current consumption at power down
IPDN
VDD VVM 1.5 V
0.1
A
5
2
CURRENT CONSUMPTION (without power-down function)
Current consumption in normal operation
IOPE
VDD 3.5 V, VVM 0 V
1.0
3.5
7.0
A
5
2
Overdischarge current consumption
IOPED
VDD VVM 1.5 V
1.0
3.0
5.5
A
5
2
OUTPUT RESISTANCE
CO pin resistance “H”
RCOH
VCO 3.0 V, VDD 3.5 V, VVM 0 V
2.5
5
10
k
7
4
CO pin resistance “L”
RCOL
VCO 0.5 V, VDD 4.5 V, VVM 0 V
2.5
5
10
k
7
4
DO pin resistance “H”
RDOH
VDO 3.0 V, VDD 3.5 V, VVM 0 V
2.5
5
10
k
8
4
DO pin resistance “L”
RDOL
VDO 0.5 V, VDD VVM 1.8 V
2.5
5
10
k
8
4
VM INTERNAL RESISTANCE
Internal resistance between VM and VDD RVMD
VDD 1.8 V, VVM 0 V
100
300
900
k
6
3
Internal resistance between VM and VSS
RVMS
VDD 3.5 V, VVM 1.0 V
10
20
40
k
6
3
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage V0CHA 0 V battery charge “available”
1.2
V
11
2
0 V battery charge inhibition battery voltage V0INH
0 V battery charge “unavailable”
0.5
V
12
2
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is
guaranteed by design, not tested in production.
8
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
2. Except Detection Delay Time (40C to 85C*1)
Table 7
(Ta 40C to 85C*1 unless otherwise specified)
Item
Symbol
Condition
DETECTION VOLTAGE
Overcharge detection voltage
VCU
VCU 3.900 V to 4.500 V, 5 mV Step
Overcharge hysteresis voltage
VHC
VHC 0.1 V to 0.4 V, 50 mV Step
Overdischarge detection voltage
VDL
VDL 2.000 V to 3.000 V, 10 mV Step
Overdischarge hysteresis voltage
VHD
VHD 0.0 V to 0.7 V, 100 mV Step
Overcurrent 1 detection voltage
VIOV1
VIOV1 0.050 V to 0.300 V, 10 mV Step
Overcurrent 2 detection voltage
VIOV2
Load short-circuiting detection voltage
VSHORT
Charger detection voltage
VCHA
INPUT VOLTAGE, OPERATION VOLTAGE
Operation voltage between VDD and VSS VDSOP1 Internal circuit operating voltage
Operation voltage between VDD and VM
VDSOP2 Internal circuit operating voltage
CURRENT CONSUMPTION (with power-down function)
Current consumption in normal operation
IOPE
VDD 3.5 V, VVM 0 V
Current consumption at power down
IPDN
VDD VVM 1.5 V
CURRENT CONSUMPTION (without power-down function)
Current consumption in normal operation
IOPE
VDD 3.5 V, VVM 0 V
Overdischarge current consumption
IOPED
VDD VVM 1.5 V
OUTPUT RESISTANCE
CO pin resistance “H”
RCOH
VCO 3.0 V, VDD 3.5 V, VVM 0 V
CO pin resistance “L”
RCOL
VCO 0.5 V, VDD 4.5 V, VVM 0 V
Min.
VCU
0.055
VHC
0.025
VDL
0.080
VHD
0.050
VIOV1
0.021
0.370
0.700
1.2
Typ.
Max.
0.500
1.200
0.7
VCU
0.040
VHC
0.025
VDL
0.080
VHD
0.050
VIOV1
0.021
0.630
1.700
0.2
1.5
1.5
0.7
VCU
Unit
Test
Test
Condition Circuit
V
1
1
V
1
1
V
2
2
V
2
2
V
3
2
V
V
V
3
3
4
2
2
2
8
28
V
V
3.5
8.0
0.1
A
A
5
5
2
2
0.7
0.7
3.5
3.0
8.0
6.0
A
A
5
5
2
2
1.2
5
15
k
7
4
1.2
5
15
k
7
4
VHC
VDL
VHD
VIOV1
DO pin resistance “H”
RDOH
VDO 3.0 V, VDD 3.5 V, VVM 0 V
1.2
5
15
k
8
4
DO pin resistance “L”
RDOL
VDO 0.5 V, VDD VVM 1.8 V
1.2
5
15
k
8
4
VM INTERNAL RESISTANCE
Internal resistance between VM and VDD
RVMD
VDD 1.8 V, VVM 0 V
78
300
1310
k
6
3
Internal resistance between VM and VSS
RVMS
VDD 3.5 V, VVM 1.0 V
7.2
20
44
k
6
3
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage V0CHA 0 V battery charge “available”
1.7
V
11
2
0 V battery charge inhibition battery voltage V0INH
0 V battery charge “unavailable”
0.3
V
12
2
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is
guaranteed by design, not tested in production.
9
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
3. Detection Delay Time
(1)
S-8261AAG, S-8261AAH, S-8261AAJ, S-8261AAL, S-8261AAM, S-8261AAN, S-8261AAO, S-8261AAP,
S-8261AAR, S-8261AAZ, S-8261ABB, S-8261ABC, S-8261ABJ, S-8261ABK, S-8261ABM, S-8261ABN,
S-8261ABP, S-8261ABR, S-8261ABS, S-8261ACB, S-8261ACE, S-8261ACI, S-8261ACK, S-8261ACM,
S-8261ACJ, S-8261ACN
Table 8
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
115
144
173
ms
9
5
Overcurrent 1 detection delay time
tlOV1
7.2
9
11
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
80
144
245
ms
9
5
Overcurrent 1 detection delay time
tlOV1
5
9
15
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
(2)
S-8261AAS
Table 9
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
115
144
173
ms
9
5
Overcurrent 1 detection delay time
tlOV1
3.6
4.5
5.4
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
80
144
245
ms
9
5
Overcurrent 1 detection delay time
tlOV1
2.5
4.5
7.7
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
10
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
(3)
S-8261AAT
Table 10
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
3.7
4.6
5.5
s
9
5
Overdischarge detection delay time
tDL
29
36
43
ms
9
5
Overcurrent 1 detection delay time
tlOV1
14
18
22
ms
10
5
Overcurrent 2 detection delay time
tlOV2
7.2
9
11
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
2.5
4.6
7.8
s
9
5
Overdischarge detection delay time
tDL
20
36
61
ms
9
5
Overcurrent 1 detection delay time
tlOV1
10
18
31
ms
10
5
Overcurrent 2 detection delay time
tlOV2
5
9
15
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
(4)
S-8261AAU, S-8261AAX, S-8261ABA
Table 11
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
3.7
4.6
5.5
s
9
5
Overdischarge detection delay time
tDL
115
144
173
ms
9
5
Overcurrent 1 detection delay time
tlOV1
7.2
9
11
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
2.5
4.6
7.8
s
9
5
Overdischarge detection delay time
tDL
80
144
245
ms
9
5
Overcurrent 1 detection delay time
tlOV1
5
9
15
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
(5)
Rev.5.4_03
S-8261ABI, S-8261ABL, S-8261ABT
Table 12
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
condition
Test
circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
29
36
43
ms
9
5
Overcurrent 1 detection delay time
tlOV1
7.2
9
11
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
20
36
61
ms
9
5
Overcurrent 1 detection delay time
tlOV1
5
9
15
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
(6)
S-8261ABY, S-8261ABZ, S-8261ACA, S-8261ACS
Table 13
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
115
144
173
ms
9
5
Overcurrent 1 detection delay time
tlOV1
7.2
9
11
ms
10
5
Overcurrent 2 detection delay time
tlOV2
0.89
1.12
1.35 ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
80
144
245
ms
9
5
Overcurrent 1 detection delay time
tlOV1
5
9
15
ms
10
5
Overcurrent 2 detection delay time
tlOV2
0.61
1.12
1.91 ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
(7)
S-8261ACD
Table 14
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
232
290
348
ms
9
5
Overcurrent 1 detection delay time
tlOV1
14
18
22
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
160
290
493
ms
9
5
Overcurrent 1 detection delay time
tlOV1
10
18
31
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
(8)
S-8261ACF
Table 15
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
115
144
173
ms
9
5
Overcurrent 1 detection delay time
tlOV1
14
18
22
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.8
2.24
2.7
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
80
144
245
ms
9
5
Overcurrent 1 detection delay time
tlOV1
10
18
31
ms
10
5
Overcurrent 2 detection delay time
tlOV2
1.2
2.24
3.8
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
(9)
Rev.5.4_03
S-8261ACH
Table 16
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Test
Condition Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time
tCU
0.24
0.3
0.36
s
9
5
Overdischarge detection delay time
tDL
29
36
43
ms
9
5
Overcurrent 1 detection delay time
tlOV1
7.2
9
11
ms
10
5
Overcurrent 2 detection delay time
tlOV2
0.89
1.12
1.35
ms
10
5
Load short-circuiting detection delay time tSHORT
220
320
380
s
10
5
DELAY TIME (Ta = 40°C to 85°C) *1
Overcharge detection delay time
tCU
0.17
0.3
0.51
s
9
5
Overdischarge detection delay time
tDL
20
36
61
ms
9
5
Overcurrent 1 detection delay time
tlOV1
5
9
15
ms
10
5
Overcurrent 2 detection delay time
tlOV2
0.61
1.12
1.91
ms
10
5
Load short-circuiting detection delay time tSHORT
150
320
540
s
10
5
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
14
Rev.5.4_03
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Test Circuits
Caution
Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
VVM and the DO pin level with respect to VSS.
(1) Test Condition 1, Test Circuit 1
(Overcharge Detection Voltage, Overcharge Hysteresis Voltage)
The overcharge detection voltage (VCU) is defined as the voltage between VDD and VSS at which VCO goes from “H”
to “L” when the voltage V1 is gradually increased from the starting condition of V1 3.5 V. The overcharge
hysteresis voltage (VHC) is then defined as the difference between the overcharge detection voltage (VCU) and the
voltage between VDD and VSS at which VCO goes from “L” to “H” when the voltage V1 is gradually decreased.
(2) Test Condition 2, Test Circuit 2
(Overdischarge Detection Voltage, Overdischarge Hysteresis Voltage)
The overdischarge detection voltage (VDL) is defined as the voltage between VDD and VSS at which VDO goes from
“H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 3.5 V and V2 0 V. The
overdischarge hysteresis voltage (VHD) is then defined as the difference between the overdischarge detection
voltage (VDL) and the voltage between VDD and VSS at which VDO goes from “L” to “H” when the voltage V1 is
gradually increased.
(3) Test Condition 3, Test Circuit 2
(Overcurrent 1 Detection Voltage, Overcurrent 2 Detection Voltage, Load Short-Circuiting Detection Voltage)
The overcurrent 1 detection voltage (VIOV1) is defined as the voltage between VM and VSS whose delay time for
changing VDO from “H” to “L” lies between the minimum and the maximum value of the overcurrent 1 detection delay
time when the voltage V2 is increased rapidly (within 10 s) from the starting condition V1 3.5 V and V2 0 V.
The overcurrent 2 detection voltage (VIOV2) is defined as the voltage between VM and VSS whose delay time for
changing VDO from “H” to “L” lies between the minimum and the maximum value of the overcurrent 2 detection delay
time when the voltage V2 is increased rapidly (within 10 s) from the starting condition V1 3.5 V and V2 0 V.
The load short-circuiting detection voltage (VSHORT) is defined as the voltage between VM and VSS whose delay time
for changing VDO from “H” to “L” lies between the minimum and the maximum value of the load short-circuiting
detection delay time when the voltage V2 is increased rapidly (within 10 s) from the starting condition V1 3.5 V
and V2 0 V.
(4) Test Condition 4, Test Circuit 2
(Charger Detection Voltage, Abnormal Charge Current Detection Voltage)
The charger detection voltage (VCHA) is defined as the voltage between VM and VSS at which VDO goes from “L” to
“H” when the voltage V2 is gradually decreased from 0 V after the voltage V1 is gradually increased from the starting
condition of V1 1.8 V and V2 0 V until the voltage V1 becomes V1 VDL (VHD / 2).
The charger detection voltage can be measured only in the product whose overdischarge hysteresis VHD 0.
Set V1 3.5 V and V2 0 V. Decrease V2 from 0 V gradually. The voltage between VM and VSS when VCO goes
from “H” to “L” is the abnormal charge current detection voltage. The abnormal charge current detection voltage has
the same value as the charger detection voltage (VCHA).
(5) Test Condition 5, Test Circuit 2
(Normal Operation Current Consumption, Power-Down Current Consumption, Overdischarge Current Consumption)
With power-down function
The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions
of V1 3.5 V and V2 0 V (Normal status).
The power-down current consumption (IPDN) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 V2 1.5 V (Overdischarge status).
Without power-down function
The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions
of V1 3.5 V and V2 0 V (Normal status).
The Overdischarge current consumption (IOPED) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 V2 1.5 V (Overdischarge status).
15
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
(6) Test Condition 6, Test Circuit 3
(Internal Resistance between VM and VDD, Internal Resistance between VM and VSS)
The resistance between VM and VDD (RVMD) is the internal resistance between VM and VDD under the set
conditions of V1 1.8 V and V2 0 V.
The resistance between VM and VSS (RVMS) is the internal resistance between VM and VSS under the set
conditions of V1 3.5 V and V2 1.0 V.
(7) Test Condition 7, Test Circuit 4
(CO Pin Resistance “H”, CO Pin Resistance “L”)
The CO pin resistance “H” (RCOH) is the resistance the CO pin under the set condition of V1 3.5 V, V2 0 V and V3
3.0 V.
The CO pin resistance “L” (RCOL) is the resistance the CO pin under the set condition of V1 4.5 V, V2 0 V and V3
0.5 V.
(8) Test Condition 8, Test Circuit 4
(DO Pin Resistance “H”, DO Pin Resistance “L”)
The DO pin resistance “H” (RDOH) is the resistance the DO pin under the set condition of V1 3.5 V, V2 0 V and V4
3.0 V.
The DO pin resistance “L” (RDOL) is the resistance the DO pin under the set condition of V1 1.8 V, V2 0 V and V4
0.5 V.
(9) Test Condition 9, Test Circuit 5
(Overcharge Detection Delay Time, Overdischarge Detection Delay Time)
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage
V1 momentarily increases (within 10 s) from the overcharge detection voltage (VCU) 0.2 V to the overcharge
detection voltage (VCU) 0.2 V under the set condition of V2 0 V.
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the
voltage V1 momentarily decreases (within 10 s) from the overdischarge detection voltage (VDL) 0.2 V to the
overdischarge detection voltage (VDL) 0.2 V under the set condition of V2 0 V.
(10) Test Condition 10, Test Circuit 5
(Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting Detection
Delay Time, Abnormal Charge Current Detection Delay Time)
The overcurrent 1 detection delay time (tIOV1) is the time needed for VDO to go “L” after the voltage V2 momentarily
increases (within 10 s) from 0 V to 0.35 V under the set condition of V1 3.5 V and V20 V.
The overcurrent 2 detection delay time (tIOV2) is the time needed for VDO to go “L” after the voltage V2 momentarily
increases (within 10 s) from 0 V to 0.7 V under the set condition of V1 3.5 V and V2 0 V.
The load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go “L” after the voltage V2
momentarily increases (within 10 s) from 0 V to 1.6 V under the set condition of V1 3.5 V and V2 0 V.
The abnormal charge current detection delay time is the time needed for VCO to go from “H” to “L” after the voltage
V2 momentarily decreases (within 10 s) from 0 V to 1.1 V under the set condition of V1 3.5 V and V2 0 V. The
abnormal charge current detection delay time has the same value as the overcharge detection delay time.
(11) Test Condition 11, Test Circuit 2 (0 V battery charge function)
(0 V Battery Charge Starting Charger Voltage)
The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between VDD and VM at which VCO
goes “H” (VVM 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of V1 V2
0 V.
(12) Test Condition 12, Test Circuit 2 (0 V battery charge inhibition function)
(0 V Battery Charge Inhibition Battery Voltage)
The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage between VDD and VSS at which
VCO goes “H” (VVM 0.1 V or higher) when the voltage V1 is gradually increased from the starting condition of V1 0
V and V2 4 V.
16
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
R1 = 470
VDD
IDD
A
DP
DP
S-8261 Series
V1
S-8261 Series
V1
VDD
VM
VM
VSS
DO
VSS
DO
CO
V VDO
V VDO
V VCO
Test Circuit 1
V2
Test Circuit 2
VDD
VDD
DP
S-8261 Series
V1
S-8261 Series
VM
VSS
DO
A IVM
CO
DO
DP
V1
VM
VSS
V VCO
COM
COM
IDD
A
CO
CO
A IDO
V2
V4
A ICO
V2
V3
COM
COM
Test Circuit 3
Test Circuit 4
VDD
DP
S-8261 Series
V1
VM
VSS
DO
Oscilloscope
CO
Oscilloscope
V2
COM
Test Circuit 5
Figure 4
17
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Operation
Remark Refer to “ Battery Protection IC Connection Example”.
1. Normal Status
The S-8261 Series monitors the voltage of the battery connected between VDD pin and VSS pin and the voltage
difference between VM pin and VSS pin to control charging and discharging. When the battery voltage is in the
range from the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin
voltage is in the range from the charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1), the IC
turns both the charging and discharging control FETs on. This status is called the normal status, and in this status
charging and discharging can be carried out freely.
Caution
When a battery is connected to the IC for the first time, discharging may not be enabled. In this
case, short the VM pin and VSS pin or connect the charger to restore the normal condition.
2. Overcurrent Status (Detection of Overcurrent 1, Overcurrent 2 and Load Short-circuiting)
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the
overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for
the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped. This status
is called the overcurrent status.
In the overcurrent status, the VM and VSS pins are shorted by the resistor between VM and VSS (RVMS) in the IC.
However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is connected. When the
load is disconnected completely, the VM pin returns to the VSS potential.
The voltage of the VM pin returns to overcurrent 1 detection voltage (VIOV1) or lower and the overcurrent status is
restored to the normal status.
3. Overcharge Status
When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under the
normal status and the detection continues for the overcharge detection delay time (tCU) or longer, the S-8261 Series
turns the charging control FET off to stop charging. This status is called the overcharge status.
The overcharge status is released by the following two cases ((1) and (2)):
(1) When the battery voltage falls below the overcharge detection voltage (VCU) overcharge hysteresis voltage
(VHC), the S-8261 Series turns the charging control FET on and turns to the normal status.
(2) When a load is connected and discharging starts, the S-8261 Series turns the charging control FET on and
returns to the normal status. Just after the load is connected and discharging starts, the discharging current flows
through the parasitic diode in the charging control FET. At this moment the VM pin potential becomes Vf, the
voltage for the parasitic diode, higher than VSS level. When the battery voltage goes under the overcharge
detection voltage (VCU) and provided that the VM pin voltage is higher than the overcurrent 1 detection voltage,
the S-8261 Series releases the overcharge status.
Caution 1. If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the
battery voltage does not fall below the overcharge detection voltage (VCU) even when a heavy load
is connected, the detection of overcurrent 1, overcurrent 2 and load short-circuiting do not
function until the battery voltage falls below overcharge detection voltage (VCU). Since an actual
battery has an internal impedance of several dozens of m, the battery voltage drops immediately
after a heavy load that causes overcurrent is connected, and the detection of overcurrent 1,
overcurrent 2 and load short-circuiting function.
2. When a charger is connected after the overcharge detection, the overcharge status is not
released even if the battery voltage is below the overcharge release voltage (VCL). The
overcharge status is released when the VM pin voltage goes over the charger detection voltage
(VCHA) by removing the charger.
18
Rev.5.4_03
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
4. Overdischarge Status
With power-down function
When the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under the normal
status and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8261 Series turns
the discharging control FET off to stop discharging. This status is called the overdischarge status. When the
discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the IC
(RVMD). When the voltage difference between the VM and VDD then is 1.3 V (typ.) or lower, the current consumption
is reduced to the power-down current consumption (IPDN). This status is called the power-down status.
The power-down status is released when a charger is connected and the voltage difference between the VM and
VDD becomes 1.3 V (typ.) or higher. Moreover when the battery voltage becomes the overdischarge detection
voltage (VDL) or higher, the S-8261 Series turns the discharging FET on and returns to the normal status.
Without power-down function
When the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under the normal
status and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8261 Series turns
the discharging control FET off to stop discharging. This status is called the overdischarge status. When the
discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the IC
(RVMD).
When the battery voltage becomes the overdischarge detection voltage (VDL) overdischarge hysteresis voltage
(VHD) or higher, the S-8261 Series turns the discharging FET on and returns to the normal status.
5. Charger Detection
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than the charger detection voltage (VCHA), the S-8261 Series releases the overdischarge status and turns the
discharging control FET on when the battery voltage becomes equal to or higher than the overdischarge detection
voltage (VDL) since the charger detection function works. This action is called charger detection.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not
lower than the charger detection voltage (VCHA), the S-8261 Series releases the overdischarge status when the
battery voltage reaches the overdischarge detection voltage (VDL) overdischarge hysteresis voltage (VHD) or higher.
6. Abnormal Charge Current Detection
If the VM pin voltage falls below the charger detection voltage (VCHA) during charging under normal status and it
continues for the overcharge detection delay time (tCU) or longer, the charging control FET turns off and charging
stops. This action is called the abnormal charge current detection.
Abnormal charge current detection works when the DO pin voltage is “H” and the VM pin voltage falls below the
charger detection voltage (VCHA). Consequently, if an abnormal charge current flows to an over-discharged battery,
the S-8261 Series turns the charging control FET off and stops charging after the battery voltage becomes higher
than the overdischarge detection voltage which make the DO pin voltage “H”, and still after the overcharge detection
delay time (tCU) elapses.
Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes
less than charger detection voltage (VCHA).
19
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
7. Delay Circuit
The detection delay times are determined by dividing a clock of the approximately 3.5 kHz with the counter.
Remark 1. The detection delay time for overcurrent 2 (tIOV2) and load short-circuiting (tSHORT) start when the
overcurrent 1 (VIOV1) is detected. When the overcurrent 2 (VIOV2) or load short-circuiting (VSHORT) is
detected over the detection delay time for each of them (= tIOV2 or tSHORT) after the detection of
overcurrent 1 (VIOV1), the S-8261 Series turns the FET off within tIOV2 or tSHORT of each detection.
VDD
DO pin
tD
VSS
Overcurrent 2 detection delay time (tIOV2)
0 tD tIOV2
Time
VDD
VIOV2
VM pin
VIOV1
VSS
Time
Figure 5
2. With power-down function
When the overcurrent is detected and continues for longer than the overdischarge detection delay time
(tDL) without releasing the load, the status changes to the power-down status when the battery voltage
falls below the overdischarge detection voltage (VDL). When the battery voltage falls below the
overdischarge detection voltage (VDL) due to the overcurrent, the S-8261 Series turns the discharging
control FET off by the overcurrent detection. In this case if the recovery of the battery voltage is so slow
that the battery voltage after the overdischarge detection delay time (tDL) is still lower than the
overdischarge detection voltage (VDL), the S-8261 Series shifts to the power-down status.
Without power-down function
When the overcurrent is detected and continues for longer than the overdischarge detection delay time
(tDL) without released the load, the status changes to the overdischarge status when the battery voltage
falls below overdischarge detection voltage (VDL).When the battery voltage falls below overdischarge
detection voltage (VDL) due to the overcurrent, the S-8261 Series turns the discharging control FET off by
the overcurrent detection. In this case, if the recovery of the battery voltage is so slow that the battery
voltage after the overdischarge detection delay time (tDL) is still lower than the overdischarge detection
voltage (VDL), the S-8261 Series shifts to the overdischarge status.
20
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
8. DP Pin
The DP pin is a test pin for delay time measurement and it should be open in the actual application. If a capacitor
whose capacitance is larger than 1000 pF or a resistor whose resistance is less than 1 M is connected to this pin,
error may occur in the delay times or in the detection voltages.
9. 0 V Battery Charge Function “Available”
This function is used to recharge the connected battery whose voltage is 0 V due to the self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or higher is applied between EB pin and EB pin by connecting a
charger, the charging control FET gate is fixed to VDD pin voltage. When the voltage between the gate and source
of the charging control FET becomes equal to or higher than the turn-on voltage due to the charger voltage, the
charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging
current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes
equal to or higher than the overdischarge detection voltage (VDL) and the overdischarge hysteresis voltage (VHD), the
S-8261 Series enters the normal status.
Caution
Some battery providers do not recommend charging for completely self-discharged battery.
Please ask battery providers before determine whether to enable or inhibit the 0 V battery charge
function.
Remark
The 0 V battery charge function has higher priority than the abnormal charge current detection function.
Consequently, a product with the 0 V battery charging function is enabled charges a battery forcibly and
abnormal charge current cannot be detected when the battery voltage is low.
10. 0 V Battery Charge Function “Unavailable”
This function inhibits the recharging when a battery that is short-circuited (0 V battery) internally is connected. When
the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate
is fixed to EB pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery
voltage (V0INH) or higher, charging can be performed.
Caution
Some battery providers do not recommend charging for completely self-discharged battery.
Please ask battery providers before determining the 0 V battery charge function.
21
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Timing Chart
(1) Overcharge and Overdischarge Detection
VCU
VCU–VHC
Battery
voltage
VDL+VHD
VDL
VDD
DO pin
VSS
VDD
CO pin
VSS
VDD
VM pin
VIOV1
VSS
VCHA
Charger connection
Load connection
Overcharge detection delay time (tCU)
Status
(1)
(2)
Overdischarge detection delay time (tDL )
(1)
(1)
(3)
Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status
The charger is supposed to charge with constant current.
Figure 6
(2) Overcurrent Detection
Battery
voltage
VCU
VCUVHC
VDLVHD
VDL
VDD
DO pin
VSS
VDD
CO pin
VSS
VM pin
VDD
VSHORT
VIOV2
VIOV1
VSS
Charger connection
Load connection
Overcurrent 1 detection delay time (tIOV1 )
Overcurrent 2 detection delay time (tIOV2 )
Status
(1)
(1)
(1)
(4)
(4)
Load short-circuiting detection delay time (tSHORT )
Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status
The charger is supposed to charge with constant current.
Figure 7
22
(4)
(1)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
(3) Charger Detection
Battery
voltage
DO pin
VCU
VCUVHC
VDLVHD
VDL
VDD
VSS
CO pin
VDD
VSS
VM pin
VDD
VSS
VCHA
Charger connection
Load connection
In case VM pin voltage VCHA
Overdischarge is released at the overdischarge
detection voltage (VDL )
Overdischarge detection delay time (tDL )
Status
(1)
(1)
(3)
Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status
The charger is supposed to charge with constant current.
Figure 8
(4) Abnormal Charge Current Detection
Battery
voltage
VC U
VC UVHC
VD LVH D
VD L
VD D
DO pin
VSS
CO pin
VD D
VSS
VM pin
VD D
VSS
VC HA
Charger connection
Load connection
Abnormal charging current detection delay time
( Overcharge detection delay time (tCU))
Overdischarge detection delay time (tD L)
Status
(1)
(3)
(1)
(2)
(1)
Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status
The charger is supposed to charge with constant current.
Figure 9
23
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Battery Protection IC Connection Example
EB
R1 : 470
DP
VDD
Battery C1 :
0.1 F
S-8261 Series
VSS
DO
CO
VM
R2 : 2 k
FET1
FET2
EB
Figure 10
Table 17 Constant for External Components
Symbol
FET1
C1
R2
*1.
*2.
*3.
*4.
*5.
N-channel
MOS FET
Purpose
Min.
Typ.
Max.
Remarks
*1
Discharge control
Threshold voltage Overdischarge detection voltage
Gate to source withstanding voltage Charger voltage*2
*1
Threshold voltage Overdischarge detection voltage
Gate to source withstanding voltage Charger voltage*2
ESD protection,
Resistance should be as small as possible to avoid lowering of
300
Resistor
470
1 k
the overcharge detection accuracy caused by VDD pin current.*3
For power fluctuation
Install a capacitor of 0.022 F or higher between VDD and
Capacitor For power fluctuation
0.022 F 0.1 F
1.0 F
*4
VSS.
Protection for reverse
Select a resistance as large as possible to prevent large current
300
Resistor
2 k
4 k
when a charger is connected in reverse.*5
connection of a charger
If the threshold voltage of a FET is low, the FET may not cut the charging current.
If a FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may
be stopped before overdischarge is detected.
If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating when a
charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 300 or higher
to R1 for ESD protection.
If a capacitor of less than 0.022 F is connected to C1, DO may oscillate when load short-circuiting is detected. Be
sure to connect a capacitor of 0.022 F or higher to C1.
If R2 has a resistance higher than 4 k, the charging current may not be cut when a high-voltage charger is
connected.
FET2
R1
Part
N-channel
MOS FET
Charge control
Caution 1. The above constants may be changed without notice.
2. The DP pin should be open.
3. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
24
Rev.5.4_03
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Precautions
The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
25
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
Characteristics (Typical Data)
1. Detection / Release Voltage Temperature Characteristics
Overcharge detection voltage vs. temperature
Overcharge release voltage vs. temperature
4.02
4.42
4.00
4.40
3.98
VCL [V]
VCU [V]
4.44
4.38
4.36
4.34
50
3.94
25
0
25
50
Ta [°C]
75
3.92
50
100
Overdischarge detection voltage vs. temperature
VDU [V]
VDL [V]
2.98
2.96
25
0
25
50
Ta [°C]
75
75
100
75
100
3.38
25
0
25
50
Ta [°C]
Overcurrent 2 detection voltage vs. temperature
0.65
0.40
0.60
0.35
VIOV2 [V]
VIOV1 [V]
100
3.40
3.34
50
100
0.45
0.30
0.25
0.55
0.50
0.45
0.20
25
0
25
50
Ta [°C]
75
100
75
100
Load short-circuiting detection voltage vs. temperature
1.5
1.4
VSHORT [V]
75
3.36
Overcurrent 1 detection voltage vs. temperature
1.3
1.2
1.1
26
25
50
Ta [°C]
3.42
3.00
1.0
50
0
3.44
3.02
0.15
50
25
Overdischarge release voltage vs. temperature
3.04
2.94
50
3.96
25
0
25
50
Ta [°C]
0.40
50
25
0
25
Ta [°C]
50
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
2. Current Consumption Temperature Characteristics
Current consumption vs. temperature in normal mode
Current consumption vs. temperature in power-down mode
0.10
5
0.08
IPDN [A]
IOPE [A]
4
3
2
1
0
50
0.06
0.04
0.02
25
0
25
50
Ta [°C]
75
0
50
100
25
0
25
50
Ta [°C]
75
100
75
100
3. Current Consumption Power Voltage Characteristics (Ta 25°C)
Current consumption vs. power supply voltage dependency
6
IOPE [A]
5
4
3
2
1
0
0
2
4
6
VDD [V]
8
10
12
4. Detection / Release Delay Time Temperature Characteristics
Overcharge detection delay time vs. temperature
Overcharge release delay time vs. temperature
60
1.50
50
tCL [ms]
tCU [s]
1.25
1.00
0.75
0.50
50
40
30
20
25
0
25
50
Ta [°C]
75
100
10
50
25
0
25
50
Ta [°C]
Overdischarge detection delay time vs. temperature
200
tDL [ms]
180
160
140
120
100
50
25
0
25
50
Ta [°C]
75
100
27
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Overcurrent 1 detection delay time vs. temperature
Overcurrent 2 detection delay time vs. temperature
3.4
15
3.0
tIOV2 [ms]
tIOV1 [ms]
13
11
9
2.6
2.2
1.8
7
5
50
Rev.5.4_03
25
0
25
50
Ta [°C]
75
100
75
100
1.4
50
25
0
25
50
Ta [°C]
75
100
Load short-circuiting detection delay time vs. temperature
0.40
tSHORT [ms]
0.36
0.32
0.28
0.24
0.20
0.16
50
25
0
25
50
Ta [°C]
5. Delay Time Power-Voltage Characteristics (Ta 25°C)
Overcurrent 1 detection delay time vs. power supply voltage dependency
15
Overcurrent 2 detection delay time vs. power supply voltage dependency
3.4
3.0
tIOV2 [ms]
tIOV1 [V]
13
11
9
7
5
2
2.5
3
3.5
VDD [V]
4
4.5
tSHORT [ms]
0.32
28
2.2
1.8
Load short-circuiting detection delay time vs. power supply voltage dependency
0.28
0.24
0.2
0.16
2.5
2.6
3
3.5
VDD [V]
4
4.5
1.4
2
2.5
3
3.5
VDD [V]
4
4.5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
6. CO Pin / DO Pin Output Current Characteristics (Ta 25°C)
VDD 3.5 V, VM VSS 0 V
CO pin source current characteristics
0.5
CO pin sink current characteristics
0.5
0.4
ICO [mA]
ICO [mA]
0.4
0.3
0.2
0.1
0
0
0.3
0.2
0.1
1
2
3
0
0
4
1
2
3
VCO [V]
VCO [V]
VDD 3.5 V, VM VSS 0 V
DO pin source current characteristics
0.5
DO pin sink current characteristics
0.5
4
5
VDD 1.8 V, VM VSS 0 V
0.4
IDO [mA]
IDO [mA]
0.4
0.3
0.2
0.1
0
0
VDD 4.5 V, VM VSS 0 V
0.3
0.2
0.1
1
2
VDO [V]
3
4
0
0
0.5
1
VDO [V]
1.5
2
29
2.9±0.2
1.9±0.2
6
0.95
4
5
1
2
3
+0.1
0.15 -0.05
0.95
0.35±0.15
No. MP006-A-P-SD-2.1
TITLE
SOT236-A-PKG Dimensions
No.
MP006-A-P-SD-2.1
ANGLE
UNIT
mm
ABLIC Inc.
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
+0.2
ø1.0 -0
2.0±0.05
0.25±0.1
4.0±0.1
1.4±0.2
3.2±0.2
3 2 1
4 5 6
Feed direction
No. MP006-A-C-SD-3.1
TITLE
SOT236-A-Carrier Tape
No.
MP006-A-C-SD-3.1
ANGLE
UNIT
mm
ABLIC Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP006-A-R-SD-2.1
TITLE
SOT236-A-Reel
No.
MP006-A-R-SD-2.1
ANGLE
QTY
UNIT
mm
ABLIC Inc.
3,000
Disclaimers (Handling Precautions)
1.
All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2.
The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other
right due to the use of the information described herein.
3.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described
herein.
4.
Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to
the use of the products outside their specified ranges.
5.
Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.
6.
When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related
laws, and follow the required procedures.
7.
The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,
biological or chemical weapons or missiles, or use any other military purposes.
8.
The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.
9.
In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are
allowed to apply for the system on customer's own responsibility.
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07
www.ablic.com
工商网监
湘ICP备2023018690号
