S-8550 Series
www.sii-ic.com
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS
RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
© SII Semiconductor Corporation, 2007-2015
The S-8550 Series is a CMOS synchronous rectification step-down switching regulator which mainly consists of a
reference voltage circuit, an oscillator, an error amplifier, a phase compensation circuit, a PWM controller, an under
voltage lockout circuit (UVLO), a current limit circuit, and a power MOS FET.
The oscillation frequency is high at 1.2 MHz,
so a high efficiency, large output current, step-down switching regulator can be achieved by using small external parts.
The built-in synchronous rectification circuit makes achieving high efficiency easier compared with conventional step-down
switching regulators.
A ceramic capacitor can be used as an output capacitor.
High-density mounting is supported by
adopting packages small SOT-23-5 and super-small and thin SNT-8A.
Features
• Oscillation frequency:
1.2 MHz
• Input voltage range:
2.0 V to 5.5 V
• Output voltage range:
Arbitrarily settable by external output voltage setting resistor
• Output current:
600 mA
• Reference voltage:
0.6 V ±2.0%
• Efficiency:
92%
• Soft-start function:
1 ms typ.
• Shutdown function:
Shutdown current consumption : 1.0 μA max.
• Built-in current limit circuit
• Pch power MOS FET on-resistance:
0.4 Ω typ.
• Nch power MOS FET on-resistance:
0.3 Ω typ.
• Constant continuous mode operation (no light load mode)
• Lead-free, Sn 100%, halogen-free*1
*1. Refer to “ Product Name Structure” for details.
Applications
•
Mobile devices, such as mobile phones, Bluetooth devices, wireless devices, digital audio players, digital still
cameras, portable DVD players, and portable CD players
Packages
•
SOT-23-5
•
SNT-8A
1
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Block Diagram
1.
SOT-23-5
VIN
Current limit
circuit
FB
IC internal
power supply
Error amplifier
−
+
+
−
Reference
voltage
PWM control
circuit
*1
L
Triangular wave
generation
circuit
VIN
ON/OFF
circuit
CIN
VOUT
CONT
PWM comparator
*1
CFB
RFB1
RFB2
UVLO
circuit
ON/OFF
COUT
VSS
*1. Parasitic diode
Figure 1
2.
SNT-8A
VIN
Current limit
circuit
FB
IC internal
power supply
Error amplifier
−
+
+
−
Reference
voltage
PWM control
circuit
*1
L
Triangular wave
generation
circuit
VIN
CIN
ON/OFF
circuit
Figure 2
CFB
RFB1
RFB2
VSS
*1. Parasitic diode
2
*1
UVLO
circuit
ON/OFF
VOUT
CONT
PWM comparator
PVSS
COUT
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Product Name Structure
1.
Product name
1. 1
SOT-23-5
S-8550
A A -
M5T1
x
Environmental code
U:
Lead-free (Sn 100%), halogen-free
G:
Lead-free (for details, please contact our sales office)
Package name abbreviation and packing specification*1
M5T1: SOT-23-5, tape
Oscillation frequency
A:
1.2 MHz
*1.
1. 2
Refer to the tape drawing.
SNT-8A
S-8550
A A -
I8T1
U
Environmental code
U:
Lead-free (Sn 100%), halogen-free
Package name abbreviation and packing specification*1
I8T1: SNT-8A, tape
Oscillation frequency
A:
1.2 MHz
*1.
2.
Refer to the tape drawing.
Packages
Package Name
SOT-23-5
SNT-8A
Package
MP005-A-P-SD
PH008-A-P-SD
Drawing Code
Tape
Reel
MP005-A-C-SD
MP005-A-R-SD
PH008-A-C-SD
PH008-A-R-SD
Land
−
PH008-A-L-SD
3
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Pin Configurations
1.
SOT-23-5
Table 1
Pin No.
Symbol
Description
Top view
1
VIN
IC power supply pin
5
2
VSS
GND pin
4
Shutdown pin
3
“H” : Power on (normal operation)
“L” : Power off (standby)
1 2 3
Figure 3
2.
ON/OFF
4
FB
Output voltage feedback pin
5
CONT
External inductor connection pin
SNT-8A
Table 2
Top view
1
2
3
4
8
7
6
5
Figure 4
4
Pin No.
1
2
3
Symbol
FB
NC*1
VSS*2
Description
Output voltage feedback pin
No connection
Small signal GND Pin
Shutdown pin
“H”:Power on (normal operation)
4
ON/OFF
“L”:Power off (standby)
5
VIN
IC power supply pin
PVSS*2
6
Power GND pin
NC*1
7
No connection
8
CONT
External inductor connection pin
*1. The NC pin is electrically open.
The NC pin can be connected to VIN, VSS or PVSS.
*2. Connect VSS and PVSS to GND.
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Absolute Maximum Ratings
Table 3
Absolute Maximum Ratings
(Unless otherwise specified: Ta = 25°C, VSS = 0 V)
Item
VIN pin voltage
FB pin voltage
CONT pin voltage
ON/OFF pin voltage
CONT pin current
Power
SOT-23-5
dissipation SNT-8A
Operating temperature
Storage temperature
Symbol
VIN
VFB
VCONT
VON/OFF
ICONT
PD
Topr
Tstg
Absolute Maximum Rating
Unit
VSS − 0.3 to VSS + 6.0
VSS − 0.3 to VIN + 0.3
VSS − 0.3 to VIN + 0.3
VSS − 0.3 to VIN + 0.3
1300
600*1
450*1
−40 to +85
−40 to +125
V
V
V
V
mA
mW
mW
°C
°C
*1. When mounted on printed circuit board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
1. The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage.
These values must therefore not be exceeded under any conditions.
2. Since this IC has a built-in power MOS FET, make sure that dissipation of the power MOS FET
does not exceed the allowable power dissipation of the package.
(Refer to Figure 5.)
Generally, dissipation of a switching regulator can be calculated by the following equation.
Dissipation = (100 (%) − efficiency (%)) / efficiency (%) × output voltage × load current
The greater part of dissipation depends on the built-in power MOS FET, however, dissipation
of the inductor is also included.
In addition, since power dissipation of the package also changes according to a mounting
board or a mounting state, fully check them using an actually mounted mode.
(PD) [mW]
700
600
Power dissipation
Caution
400
300
SNT-8A
200
100
0
Figure 5
SOT-23-5
500
0
50
100
150
Ambient temperature (Ta) [°C]
Power Dissipation of Package (Mounted on Board)
5
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Electrical Characteristics
Table 4
Electrical Characteristics
(Unless otherwise specified: VIN = 3.6 V, VOUT = 1.8 V (the conditions in Table 5), Ta = +25°C)
Item
Min.
Typ.
Max.
Unit
Test
Circuit
2.0
1.1
0.588
−
−
0.6
5.5
4.0
0.612
V
V
V
2
2
2
−
±100
−
ppm/°C
2
VIN = 2.0 V to 5.5 V, FB pin
VIN = 2.0 V to 5.5 V,
VON/OFF = 0 V
fosc = 1.2 MHz, no external parts,
VFB = VFB(S) × 1.1 V
ICONT = 100 mA
ICONT = −100 mA
VIN = 2.0 V to 5.5 V,
VON/OFF = 0 V, VCONT = 0 or 3.6 V
−0.1
−
+0.1
μA
1
−
−
1.0
μA
1
−
200
400
μA
1
−
−
0.4
0.3
0.6
0.5
Ω
1
−
±0.01
±0.5
μA
1
−
−
Time required to reach 90% of
VOUT(S)
VIN = 2.0 V to 5.5 V, ON/OFF pin
VIN = 2.0 V to 5.5 V, ON/OFF pin
VIN = 2.0 V to 5.5 V, ON/OFF pin
VIN = 2.0 V to 5.5 V, ON/OFF pin
−
800
1.02
1000
1.2
1200
1.38
mA
MHz
1
2
0.7
1.0
1.3
ms
2
0.9
−
−0.1
−0.1
1.4
−
−
−
−
1.6
−
0.3
0.1
0.1
1.78
V
V
μA
μA
V
2
2
1
1
2
Symbol
Operating input voltage
Output voltage range*1
FB voltage
FB voltage temperature
coefficient
FB pin input current
Current consumption
during shutdown
VIN
VOUT
VFB
ΔVFB
ΔTa
IFB
Current consumption 1
ISS1
Power MOS FET
on-resistance
RPFET
RNFET
ISSS
Power MOS FET
leakage current
Limit current
Oscillation frequency
ILIM
fosc
Soft-start time
tSS
High level input voltage
Low level input voltage
High level input current
Low level input current
UVLO detection voltage
VSH
VSL
ISH
ISL
VUVLO
ILSW
Condition
−
VIN = VOUT(S) + 0.4 V to 5.5 V
VIN = VOUT(S) + 0.4 V to 5.5 V
Ta = −40°C to +85°C
*1. VOUT(S) is the output voltage set value, and VOUT is the typ. value of the actual output voltage.
VOUT(S) can be set depending on the ratio between the VFB value and output voltage set resistors (RFB1, RFB2).
For details, refer to “ External Parts Selection”.
External Parts When Measuring Electrical Characteristics
Table 5
Element Name
Inductor
Input capacitor
Output capacitor
Output voltage set resistor 1
Output voltage set resistor 2
Phase compensation capacitor
6
Symbol
L
CIN
COUT
RFB1
RFB2
CFB
External Parts
Constant
Manufacturer
3.3 μH
4.7 μF
10 μF
36 kΩ
18 kΩ
68 pF
Taiyo Yuden Co., Ltd.
TDK Corporation
TDK Corporation
Rohm Co., Ltd.
Rohm Co., Ltd.
Murata Manufacturing Co., Ltd.
Part Number
NR4018T3R3M
C3216X7R1E475K
C3216X7R1C106K
MCR03 Series 3602
MCR03 Series 1802
GRM1882C1H680J
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Test Circuits
1.
A
VIN
CIN
CONT
S-8550 Series
FB
ON/OFF
VSS PVSS*1
↓
*1. PVSS pin is unavailable for the S-8550 Series with SOT-23-5.
Figure 6
2.
L
VIN
CIN
CONT
S-8550 Series
FB
ON/OFF
VSS PVSS*1
COUT
VOUT
CFB
RFB1
V
↓
IOUT
RFB2
V
*1. PVSS pin is unavailable for the S-8550 Series with SOT-23-5.
Figure 7
7
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Operation
1.
Synchronous rectification PWM control step-down switching regulator
1. 1
Synchronous rectification
The synchronous rectification method lowers voltage drop to greatly reduce power dissipation since an Nch
power MOS FET, having resistance much lower than conventional switching regulators, is used.
In conventional switching regulators, current flows in the diode connected between the GND and CONT pins
when the Pch power MOS FET is off.
The forward drop voltage (Vf) of such diodes is large, between 0.3 V
to 0.7 V, so the power dissipation used to be very large.
Synchronous rectification ultra-low resistance Nch
transistors repeat on and off, in synchronization with the operation of the Pch driver, in the reverse cycle of
the Pch driver.
Moreover, the built-in P and N through prevention circuit helps much reduction of power
consumption during operation.
1. 2
PWM control
The S-8550 Series is a switching regulator using a pulse width modulation method (PWM) and features low
current consumption.
In conventional PFM control switching regulators, pulses are skipped when the output load current is low,
causing a fluctuation in the ripple frequency of the output voltage, resulting in an increase in the ripple
voltage.
In the S-8550 Series, the switching frequency does not change, although the pulse width changes from 0% to
100% corresponding to each load current.
The ripple voltage generated from switching can thus be
removed easily using a filter because the switching frequency is constant.
2.
Soft-start function
The soft-start circuit built in the S-8550 Series controls the rush current and the overshoot of the output voltage
when powering on, the ON/OFF pin is switched from the “L” level to the “H” level, or the UVLO operation is
released.
3.
A reference voltage adjustment method is adopted as the soft-start method.
Shutdown pin
This pin stops or starts step-up operations.
Switching the shutdown pin to the “L” level stops operation of all the internal circuits and reduces the current
consumption significantly.
pulled down internally.
DO NOT use the shutdown pin in a floating state because it is not pulled up or
DO NOT apply voltage of between 0.3 V and 0.9 V to the shutdown pin because
applying such a voltage increases the current consumption.
If the shutdown pin is not used, connect it to the
VIN pin.
Table 6
Shutdown Pin
“H”
“L”
CR Oscillation Circuit
Operates
Stops
VIN
ON/OFF
VSS
Figure 8
8
Output Voltage
Set value
Hi-Z
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
4.
S-8550 Series
Current limit circuit
A current limit circuit is built in the S-8550 Series.
The current limit circuit monitors the current that flows in the Pch power MOS FET and limits current in order to
prevent thermal destruction of the IC due to an overload or magnetic saturation of the inductor.
When a current exceeding the current limit detection value flows in the Pch power MOS FET, the current limit
circuit operates and turns off the Pch power MOS FET since the current limit detection until one clock of the
oscillator ends.
The Pch power MOS FET is turned on in the next clock and the current limit circuit resumes
current detection operation.
If the value of the current that flows in the Pch power MOS FET remains the
current limit detection value or more, the current limit circuit functions again and the same operation is repeated.
Once the value of the current that flows in the Pch power MOS FET is lowered up to the specified value, the
normal operation status restores.
A slight overshoot is generated in the output voltage when the current limit is
released.
The current limit detection value is fixed to 1 A (typ.) in the IC.
If the time taken for the current limit to be
detected is shorter than the time required for the current limit circuit in the IC to detect, the current value that is
actually limited increases.
Generally, the voltage difference between the VIN and VOUT pins is large, the
current limit detection status is reached faster and the current value increases.
5.
100% duty cycle
The S-8550 Series operates up to the maximum duty cycle at 100%.
Even when the input voltage is lowered
up to the output voltage value set using the external output voltage setting resistor, the Pch power MOS FET is
kept on and current can be supplied to the load.
The output voltage at this time is the input voltage from which
the voltage drop due to the direct resistance of the inductor and the on-resistance of the Pch power MOS FET
are subtracted.
6.
UVLO function
The S-8550 Series includes a UVLO (under-voltage lockout) circuit to prevent the IC from malfunctioning due to
a transient status when power is applied or a momentary drop of the supply voltage.
When UVLO is in the
detection state, the Pch and Nch power MOS FETs stop switching operation, and the CONT pin become Hi-Z.
Once the S-8550 Series is in the UVLO detection status, the soft-start function is reset, but the soft-start
operates by the releasing operation of UVLO after that.
Note that the other internal circuits operate normally and that the status is different from the power-off status.
The hysteresis width is set for the UVLO circuit to prevent a malfunction due to a noise that is generated in the
input voltage.
A voltage about 150 mV (typ.) higher than the UVLO detection voltage is the release voltage.
9
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Operation Principle
The S-8550 Series is a step-down synchronous rectification switching regulator based on constant PWM control.
Figure 9 shows the basic circuit diagram.
A step-down switching regulator starts current supply by the input voltage (VIN) when the Pch power MOS FET is
turned on and holds energy in the inductor at the same time.
current held in the inductor is released.
When the Pch power MOS FET is turned off, the
The released current flows in the smoothing circuit, with the energy loss
held minimum, supplies the output voltage (VOUT) lower than VIN.
switching frequency (fosc) and ON time (ton).
VOUT is kept constant by controlling the
With the PWM control method, VOUT is made constant by controlling
the ON time with fOSC unchanged.
I1
L
Pch power MOS FET
Control
circuit
VIN
Figure 9
1.
COUT
I2
VOUT
Nch power MOS FET
Basic Circuit Drawing of Step-down Switching Regulator
Continuous mode
The following explains how the current flows to the inductor when the step-down operation is constant and
stable.
When the Pch power MOS FET is turned on, current I1 flows in the direction shown by the arrow in Figure 9,
and energy is stored in the inductor (L).
When the output capacitor (COUT) is charged, supply of the output
current (IOUT) is started at the same time.
The inductor current (IL) gradually increases in proportion to the ON
time (tON) of the Pch power MOS FET as shown in Figure 10 (changes from IL min. to IL max.).
When the Pch
power MOS FET is turned off, the Nch power MOS FET is turned on and IL tries to hold IL max.
Consequently,
current I2 flows in the direction shown by the arrow in Figure 9.
reaches IL min. when the OFF time (tOFF) has elapsed.
turned off and the next cycle is entered.
As a result, IL gradually decreases and
When tOFF has elapsed, the Nch power MOS FET is
The above sequence is repeated.
As explained in the above, the continuous mode refers to the operation in the current cycle in which IL linearly
changes from IL min. to IL max.
Even if IL min. is less than 0 A, IL min. keeps flowing (backflow current flows).
IL
IL max.
IL min.
t
ton
toff
T = 1/fOSC
Figure 10
10
Continuous Mode (Current Cycle of Inductor Current (IL))
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
2.
S-8550 Series
Backflow current
The S-8550 Series performs PWM synchronous rectification even if IL min. is less than 0 A, so a backflow
current is generated in VIN and the backflow current becomes maximum when no load is applied (Refer to
Figure 11).
Use the following equation to calculate the maximum backflow current value, which should be
taken into consideration when designing.
Duty (IOUT = 0) = VOUT / VIN
Example : VIN = 3.6 V, VOUT = 1.8 V …… Duty = 50%
ΔIL = ΔV / L × ton = (VIN − VOUT) × Duty / (L × fOSC)
Example : VIN = 3.6 V, VOUT = 1.8 V, fOSC = 1.2 MHz, L = 3.3 μH …… ΔIL = 227 mA
IL max. = ΔIL / 2 = 113.5 mA, IL min. = −ΔIL / 2 = −113.5 mA
The current value waveform of the inductor is a triangular wave, of which the maximum value is IL max. and the
minimum value is IL min. (negative value), and the negative value (the portion marked by diagonal lines in
Figure 11) backflows when no load is applied (Refer to Figure 11).
If about 113.5 mA of IOUT flows in the above conditions, the minimum value (IL min.) of the triangular wave is
made 0 mA and no backflow current flows.
When an input capacitor (CIN) is connected, the backflow current is absorbed by CIN, thus reducing the backflow
current to flow in the power supply.
Be sure to connect an input capacitor to reduce backflow current to the
power supply (Refer to Figure 12).
The above presents the conditions required to prevent backflow current from flowing, which is only a guideline.
Perform sufficient confirmation using an actual application.
Inductor current with no load
Inductor current when load is a
current of 113.5 mA
IL
IL
IL max.
227 mA
113.5 mA
IL max.
ΔIL
Backflow
current
IL min.
0 mA
IOUT
−113.5 mA
Figure 11
ΔIL
113.5 mA
IOUT
IL min.
0 mA
Backflow current = 0 mA
Example of Conditions to Prevent Backflow Current from Flowing
VIN
Backflow current
VIN
VOUT
CONT
CIN
Inductor
current IL
Figure 12
Backflow Current
11
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
External Parts Selection
1.
Inductor
The inductance (L value) has a strong influence on the maximum output current (IOUT) and efficiency (η).
The peak current (IPK) increases by decreasing L and the stability of the circuit improves and IOUT increases.
If
L is decreased further, the current drive capability of the external transistor is insufficient and IOUT decreases.
If the L value is increased, the loss due to IPK of the power MOS FET decreases and the efficiency becomes
maximum at a certain L value.
Further increasing L decreases the efficiency due to the increased loss of the
DC resistance of the inductor.
The recommended L value for the S-8550 Series is 3.3 μH.
When selecting an inductor, note the allowable current of the inductor.
If a current exceeding this allowable
current flows through the inductor, magnetic saturation occurs, substantially lowering the efficiency.
Therefore, select an inductor so that IPK does not exceed the allowable current.
IPK is expressed by the
following equations in the discontinuous mode and continuous mode.
IPK = IOUT +
VOUT × (VIN − VOUT)
2 × fOSC × L × VIN
fOSC = Oscillation frequency
Table 7
Manufacturer
Taiyo Yuden Co., Ltd.
Sumida Corporation
TDK Corporation
FDK Corporation
12
Typical Inductors
L Value
DC
Resistance
Rated Current
Dimensions
(L × W × H) [mm]
NR4018T3R3M
3.3 μH
0.07 Ω max.
1.23 A max.
4.0 × 4.0 × 1.8
NR3012T3R3M
3.3 μH
0.1 Ω max.
0.91 A max.
3.0 × 3.0 × 1.2
CDRH3D16/HP-3R3
3.3 μH
0.085 Ω max.
1.40 A max.
4.0 × 4.0 × 1.8
CDRH2D11/HP-3R3
3.3 μH
0.173 Ω max.
0.9 A max.
3.2 × 3.2 × 1.2
VLF4012AT-3R3M
3.3 μH
0.12 Ω max.
1.3 A max.
3.7 × 3.5 × 1.2
VLF3010AT-3R3M
3.3 μH
0.17 Ω max.
0.87 A max.
2.6 × 2.8 × 1.0
MIP3226D3R3M
3.3 μH
0.104 Ω max.
1.2 A max.
3.2 × 2.6 × 1.0
MIPS2520D3R3M
3.3 μH
0.156 Ω max.
1.0 A max.
2.5 × 2.0 × 1.0
Part Number
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
2.
S-8550 Series
Capacitors (CIN, COUT)
A ceramic capacitor can be used for the input (CIN) and output (COUT) sides.
impedance and averages the input current to improve efficiency.
CIN lowers the power supply
Select CIN according to the impedance of the
power supply to be used. The recommended capacitance is 4.7 μF for the S-8550 Series when a general
lithium ion rechargeable battery is used.
Select as COUT a capacitor with large capacitance and small ESR for smoothing the ripple voltage.
The
optimum capacitor selection depends on the L value, capacitance value, wiring, and application (output load).
Select COUT after sufficient evaluation under actual use conditions.
3.
Output voltage setting resistors (RFB1, RFB2), capacitor for phase compensation (CFB)
With the S-8550 Series, VOUT can be set to any value by external divider resistors.
resistors across the VOUT and VSS pins.
VOUT =
Connect the divider
Because VFB = 0.6 V typ., VOUT can be calculated by this equation.
(RFB1 + RFB2)
× 0.6
RFB2
Connect divider resistors RFB1 and RFB2 as close to the IC to minimize effects from of noise.
If noise does have
an effect, adjust the values of RFB1 and RFB2 so that RFB1 + RFB2 < 100 kΩ.
CFB connected in parallel with RFB1 is a capacitor for phase compensation.
By setting the zero point (the phase feedback) by adding capacitor CFB to output voltage setting resistor RFB1 in
parallel, the feedback loop gains the phase margin. As a result, the stability can be obtained. In principle, to use
the portion how much the phase has feed back by the zero point effectively, define CFB referring to the following
equation.
CFB ≅
1
2 × π × RFB1 × 70 kHz
This equation is the reference.
The followings are explanation regarding the proper setting.
To use the portion how much the phase has feed back by the zero point effectively, set RFB1 and CFB so that the
zero point goes into the higher frequency than the pole frequency of L and COUT. The following equations are the
pole frequency of L and COUT and the zero point frequency by CFB and RFB1.
fpole ≅
fzero ≅
1
2×π×
L × COUT
1
2 × π × RFB1 × CFB
The transient response can be improved by setting the zero point frequency in the range of lower frequency.
However, since the gain becomes higher in the range of high frequency, the total phase of feedback loop delays
180° or more by setting the zero point frequency in the significantly lower range. As a result, the gain cannot be
0 dB or lower in the frequency range thus the operation might be unstable. Determine the proper value after the
sufficient evaluation under the actual condition.
The typical constants by our evaluation are in Table 8.
Table 8 Constant for External Parts
VOUT(s) [V]
1.1
1.8
3.3
4.0
RFB1 [kΩ]
36
36
36
51
RFB2 [kΩ]
43
18
8
9
CFB [pF]
56
68
120
100
L [μH]*1
COUT [μF]*1
3.3
3.3
3.3
3.3
10
10
10
10
*1. The recommended parts in Table 5
13
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Standard Circuits
1.
SOT-23-5
VIN
Current limit
circuit
FB
Error amplifier
−
+
+
−
Reference
voltage
VIN
IC internal
power supply
*1
CONT
3.3 μH
PWM comparator
L
Triangular wave
generation
circuit
ON/OFF
circuit
CIN
4.7 μF
PWM control
circuit
CFB
68 pF
*1
1.0 μF
UVLO circuit
ON/OFF
VOUT
RFB1
36 kΩ
RFB2
18 kΩ
COUT
10 μF
VSS
Ground point
*1. Parasitic diode
Figure 13
2.
SNT-8A
VIN
Current limit
circuit
FB
Error amplifier
−
+
+
−
Reference
voltage
VIN
CIN
4.7 μF
IC internal
power supply
PWM control
circuit
*1
CONT
PWM comparator
L
Triangular wave
generation
circuit
ON/OFF
circuit
ON/OFF
3.3 μH
*1
CFB
68 pF
1.0 μF
UVLO circuit
VSS
VOUT
RFB1
36 kΩ
RFB2
18 kΩ
COUT
10 μF
PVSS
Ground point
*1. Parasitic diode
Figure 14
Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough
evaluation using an actual application to set the constants.
14
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Precaution
•
Mount external capacitors, diodes, and inductors as close as possible to the IC, and make a one-point grounding.
•
Characteristics ripple voltage and spike noise occur in IC containing switching regulators. Moreover rush current
flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and
impedance of power supply used, fully check them using an actually mounted model.
•
The 1.0 μF capacitance connected between the VIN and VSS pins is a bypass capacitor. It stabilizes the power
supply in the IC when application is used with a heavy load, and thus effectively works for stable switching
regulator operation.
Allocate the bypass capacitor as close to the IC as possible, prioritized over other parts.
•
Although the IC contains a static electricity protection circuit, static electricity or voltage that exceeds the limit of
the protection circuit should not be applied.
•
The power dissipation of the IC greatly varies depending on the size and material of the board to be connected.
Perform sufficient evaluation using an actual application before designing.
•
SII Semiconductor Corporation assumes no responsibility for the way in which this IC is used on products created
using this IC or for the specifications of that product, nor does SII Semiconductor Corporation assume any
responsibility for any infringement of patents or copyrights by products that include this IC either in Japan or in
other countries.
15
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Characteristics (Typical Data)
1.
Example of Major Power Supply Dependence Characteristics (Ta = +25°C)
1. 1 Current consumption 1 (ISS1) vs. Input voltage (VIN)
500
1. 2 Current consumption during shutdown (ISSS) vs. Input voltage (VIN)
1.0
0.8
ISSS [μA]
ISS1 [μA]
400
300
200
100
0
3.5 4.0 4.5 5.0 5.5
VIN [V]
1. 3 Oscillation frequency (fosc) vs. Input voltage (VIN)
1.38
1.34
1.30
1.26
1.22
1.18
1.14
1.10
1.06
1.02
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
3.0
1. 5 Power MOS FET on-resistance (RFET) vs. Input voltage (VIN)
0.8
0.6
0.5
Pch
0.4
0.3
Nch
0.2
2.0
2.5
3.0
3.5 4.0
VIN [V]
4.5
5.0
5.5
1. 7 ON/OFF pin input voltage“H” (VSH) vs. Input voltage (VIN)
0.9
3.5 4.0 4.5 5.0 5.5
VIN [V]
Soft-start time (tSS) vs. Input voltage (VIN)
1.3
2.5
3.0
0.9
0.8
0.7
3.5 4.0
VIN [V]
4.5
5.0
5.5
1. 6 Power MOS FET leakage current (ILSW) vs. Input voltage (VIN)
0.5
0.4
0.3
0.2
Pch
0.1
0
−0.1
Nch
−0.2
−0.3
−0.4
−0.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
1. 8 ON/OFF pin input voltage“L” (VSL) vs. Input voltage (VIN)
0.9
VSL [V]
0.7
0.6
0.5
0.6
0.5
0.4
0.4
0.3
0.3
3.5 4.0
VIN [V]
2.0
1.0
0.7
3.0
3.0
1.2
0.8
2.5
2.5
1.1
0.8
2.0
2.0
ILSW [μA]
RFET []
0.7
1. 4
tSS [ms]
2.5
fOSC [MHz]
2.0
VSH [V]
0.4
0.2
0
16
0.6
4.5
5.0
5.5
2.0
2.5
3.0
3.5 4.0
VIN [V]
4.5
5.0
5.5
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
1. 9
S-8550 Series
FB voltage (VFB) vs. Input voltage (VIN)
612
VFB [mV]
608
604
600
596
592
588
2.0
3.0
3.5 4.0
VIN [V]
4.5
5.0
5.5
Example of Major Temperature Characteristics (Ta = −40 to +85°C)
ISS1 [μA]
2. 1 Current consumption 1 (ISS1) vs. Temperature (Ta)
500
VIN = 5.5 V
400
VIN = 3.6 V
300
VIN = 2.0 V
200
2. 2 Current consumption during shutdown (ISSS) vs. Temperature (Ta)
1.0
0.8
ISSS [μA]
2.
2.5
100
−40 −25
0
0
25
Ta [C]
50
75 85
fOSC [MHz]
2. 3 Oscillation frequency (fosc) vs. Temperature (Ta)
1.32
VIN = 5.5 V
1.28
VIN = 3.6 V
1.24
VIN = 2.0 V
1.20
1.16
2. 4
25
Ta [C]
−40 −25
25
Ta [C]
50
75 85
0.4
0.3
−40 −25
0
25
Ta [C]
50
75 85
75 85
Soft-start time (tSS) vs. Temperature (Ta)
1.3
1.1
1.0
VIN = 5.5 V
VIN = 3.6 V
VIN = 2.0 V
0.9
0.7
0
50
−40 −25
0
25
Ta [C]
50
75 85
2. 6 Power MOS FET leakage current (ILSW) vs. Temperature (Ta)
0.5
0.4
0.3
Nch
0.2
VIN = 5.5 V
0.1
0
−0.1
Pch
−0.2
VIN = 5.5 V
−0.3
−0.4
−0.5
−40 −25
75 85
0
25
50
Ta [C]
ILSW [μA]
RFET []
0
0.8
2. 5 Power MOS FET on-resistance (RFET) vs. Temperature (Ta)
0.8
Nch
Pch
0.7
VIN = 5.5 V
VIN = 5.5 V
V
IN = 3.6 V
VIN = 3.6 V
0.6
VIN = 2.0 V
VIN = 2.0 V
0.5
0.2
−40 −25
1.2
1.12
1.08
0.4
0.2
tSS [ms]
0
VIN = 5.5 V
VIN = 3.6 V
VIN = 2.0 V
0.6
17
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
2. 7 ON/OFF pin input voltage“H” (VSH) vs. Temperature (Ta)
0.9
2. 8 ON/OFF pin input voltage“L” (VSL) vs. Temperature (Ta)
0.9
VIN = 5.5 V
0.8
VIN = 3.6 V
0.7
VIN = 2.0 V
0.6
0.8
VSL [V]
VIN = 3.6 V
VIN = 5.5 V
VIN = 2.0 V
0.6
0.5
0.4
0.4
0.3
−40 −25
0
25
Ta [C]
50
−40 −25
75 85
2. 9 UVLO detection voltage (VUVLO) vs. Temperature (Ta)
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
−40 −25
75 85
0
25
50
Ta [C]
3.
0.5
0.3
0
25
Ta [C]
50
75 85
2. 10 FB voltage (VFB) vs. Temperature (Ta)
612
VIN = 5.5 V
VIN = 3.6 V
608
VIN = 2.0 V
604
VFB [mV]
VUVLO [V]
VSH [V]
0.7
600
596
592
588
−40 −25
0
25
Ta [C]
50
75 85
Examples of Transient Response Characteristics
(Unless otherwise specified, the used parts are ones shown in External Parts When Measuring Electrical Characteristics.)
IL
−0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
t [ms]
1.5
1.0
0.5
0
−0.5
1.5
1.0
0.5
0
−0.5
Shutdown pin response (VOUT = 1.8 V, VIN = 3.6 V, VON/OFF = 0 V → 3.6 V, Ta = +25°C)
IOUT = 1 mA
VON/OFF
VOUT
IL
−0.2
(2)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
t [ms]
0.6
0.4
0.2
0
−0.2
VON/OFF, VOUT [V]
VON/OFF, VOUT [V]
(1)
4
3
2
1
0
−1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
t [ms]
0.6
0.4
0.2
0
−0.2
IOUT = 600 mA
4
3
VIN
2
1
VOUT
0
−1
IL [A]
VOUT
VIN, VOUT [V]
VIN
IL
3. 2
(2)
IL [A]
IOUT = 1 mA
−0.2
18
(VOUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C)
IL [A]
(1)
4
3
2
1
0
−1
Powering ON
IL [A]
VIN, VOUT [V]
3. 1
IOUT = 600 mA
4
3
VON/OFF
2
1
VOUT
0
−1
IL
−0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
t [ms]
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
−0.1
3. 4
VOUT [V]
(1)
0
VIN
2.2
2.0
1.8
1.6
1.4
0.1 0.2 0.3 0.4 0.5 0.6 0.7
t [ms]
VOUT
−0.1
0
4.5
3.5
2.5
1.5
0.5
400
300
200
100
0
−100
0.1 0.2 0.3 0.4 0.5 0.6 0.7
t [ms]
Load fluctuations (VOUT = 1.8 V, VIN = 3.6 V, Ta = +25°C)
IOUT = 0.1 mA → 100 mA → 0.1 mA
IOUT
1.90
1.85
1.80
1.75
1.70
VIN = 2.6 V → 3.6 V → 2.6 V
VIN [V]
VOUT
IOUT = 600 mA,
IOUT [mA]
2.2
2.0
1.8
1.6
1.4
(2)
VOUT
−0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
t [ms]
(2)
400
300
200
100
0
−100
IOUT = 0.1 mA → 300 mA → 0.1 mA
IOUT
VOUT [V]
VOUT [V]
VIN
VIN = 2.6 V → 3.6 V → 2.6 V
4.5
3.5
2.5
1.5
0.5
VOUT [V]
IOUT = 1 mA,
VIN [V]
(1)
Power supply fluctuations (VOUT = 1.8 V, Ta = +25°C)
IOUT [mA]
3. 3
S-8550 Series
1.90
1.85
1.80
1.75
1.70
VOUT
−0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
t [ms]
19
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Reference Data
1.
Reference data for external parts
Table 9
Element Name
Properties of External Parts
Product Name
Manufacture
Characteristics
3.3 μH, DCRMAX = 0.07 Ω, IMAX = 1.23 A
Inductor
NR4018T3R3M
Taiyo Yuden Co., Ltd
Input capacitor
C3216X7R1E475K
TDK Corporation
4.7 μF
Output capacitor
C3216X7R1C106K
TDK Corporation
10 μF
Caution The values of the external parts are based on the materials provided by each manufacturer. However,
consider the characteristics of the original materials when using the above products.
2. Output current (IOUT) vs. Efficiency (η) Characteristics and Output current (IOUT) vs. Output voltage (VOUT) Characteristics
VOUT = 1.1 V (RFB1 = 36 kΩ, RFB2 = 43 kΩ)
2. 2
η [%]
Output current (IOUT) vs. Output voltage (VOUT)
1.3
VIN = 5.5 V
VIN = 3.6 V
1.2
VIN = 2.0 V
1.1
1.0
0.9
0
1
10
IOUT [mA]
100
1000
VOUT = 1.8 V (RFB1 = 36 kΩ, RFB2 = 18 kΩ)
(1) Output current (IOUT) vs. Efficiency (η)
100
90
VIN = 2.2 V
80
VIN = 3.6 V
70
VIN = 5.5 V
60
50
40
30
20
10
0
0
1000
1
10
100
IOUT [mA]
20
(2)
VOUT [V]
η [%]
(1) Output current (IOUT) vs. Efficiency (η)
100
90
VIN = 2.0 V
80
VIN = 3.6 V
70
VIN = 5.5 V
60
50
40
30
20
10
0
0
1000
1
10
100
IOUT [mA]
(2)
VOUT [V]
2. 1
Output current (IOUT) vs. Output voltage (VOUT)
2.0
VIN = 5.5 V
VIN = 3.6 V
1.9
VIN = 2.0 V
1.8
1.7
1.6
0
1
10
IOUT [mA]
100
1000
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
VOUT = 3.3 V (RFB1 = 36 kΩ, RFB2 = 8 kΩ)
2. 4
Output current (IOUT) vs. Output voltage (VOUT)
3.5
VIN = 5.5 V
VIN = 3.7 V
3.4
3.3
3.2
3.1
0
1
10
IOUT [mA]
100
1000
VOUT = 4.0 V (RFB1 = 51 kΩ, RFB2 = 9 kΩ)
η [%]
(1) Output current (IOUT) vs. Efficiency (η)
100
90
VIN = 4.4 V
80
VIN = 5.5 V
70
60
50
40
30
20
10
0
0
1000
1
10
100
IOUT [mA]
3.
(2)
VOUT [V]
η [%]
(1) Output current (IOUT) vs. Efficiency (η)
100
90
VIN = 3.7 V
80
VIN = 5.5 V
70
60
50
40
30
20
10
0
0
1000
1
10
100
IOUT [mA]
(2)
VOUT [V]
2. 3
S-8550 Series
Output current (IOUT) vs. Output voltage (VOUT)
4.2
VIN = 5.5 V
VIN = 4.4 V
4.1
4.0
3.9
3.8
0
1
10
IOUT [mA]
100
1000
1
10
IOUT [mA]
100
1000
Output current (IOUT) vs. Ripple voltage (Vr) Characteristics
3. 1
(1)
VOUT = 1.1 V (RFB1 = 36 kΩ, RFB2 = 43 kΩ)
VIN = 3.6 V
50
(2)
40
Vr [mV]
Vr [mV]
40
VIN = 5.5 V
50
30
20
10
30
20
10
0
0
0
1
10
IOUT [mA]
100
1000
0
21
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
3. 2
(1)
VOUT = 1.8 V (RFB1 = 36 kΩ, RFB2 = 18 kΩ)
VIN = 3.6 V
50
(2)
40
Vr [mV]
Vr [mV]
40
30
20
10
1
10
IOUT [mA]
100
1000
0
VIN = 3.6 V
50
(2)
Vr [mV]
Vr [mV]
30
20
1000
1
10
IOUT [mA]
100
1000
VIN = 5.5 V
50
30
20
0
0
1
10
IOUT [mA]
100
1000
VOUT = 4.0 V (RFB1 = 51 kΩ, RFB2 = 9 kΩ)
VIN = 5.5 V
50
40
Vr [mV]
100
10
0
30
20
10
0
0
22
10
IOUT [mA]
40
10
(1)
1
VOUT = 3.3 V (RFB1 = 36 kΩ, RFB2 = 8 kΩ)
40
3. 4
20
0
0
(1)
30
10
0
3. 3
VIN = 5.5 V
50
1
10
IOUT [mA]
100
1000
0
STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS
Rev.5.0_01
S-8550 Series
Marking Specifications
1.
SOT-23-5
Top view
5
(1) to (3):
(4):
4
Product code (Refer to Product name vs. Product code.)
Lot number
(1) (2) (3) (4)
1
2
3
Product name vs. Product code
Product Code
(1)
(2)
(3)
R
5
A
Product Name
S-8550AA-M5T1x
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
2.
SNT-8A
8
Top view
7
6
5
(1):
(2) to (4):
(5), (6):
(7) to (11):
(1) (2) (3) (4)
Blank
Product code (Refer to Product name vs. Product code)
Blank
Lot number
(5) (6) (7) (8)
(9) (10) (11)
1
2
3
4
Product name vs. Product code
Product name
S-8550AA-I8T1U
(2)
R
Product code
(3)
(4)
5
A
23
2.9±0.2
1.9±0.2
4
5
1
2
+0.1
0.16 -0.06
3
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
No.
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
SCALE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
2.0±0.05
+0.2
ø1.0 -0
0.25±0.1
4.0±0.1
1.4±0.2
3.2±0.2
3 2 1
4
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
No.
MP005-A-C-SD-2.1
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
SOT235-A-Reel
TITLE
No.
MP005-A-R-SD-1.1
SCALE
QTY.
UNIT
3,000
mm
SII Semiconductor Corporation
1.97±0.03
8
7
6
5
3
4
+0.05
1
0.5
2
0.08 -0.02
0.48±0.02
0.2±0.05
No. PH008-A-P-SD-2.0
TITLE
SNT-8A-A-PKG Dimensions
No.
PH008-A-P-SD-2.0
SCALE
UNIT
mm
SII Semiconductor Corporation
+0.1
ø1.5 -0
5°
2.25±0.05
4.0±0.1
2.0±0.05
ø0.5±0.1
0.25±0.05
0.65±0.05
4.0±0.1
4 321
5 6 78
Feed direction
No. PH008-A-C-SD-1.0
TITLE
SNT-8A-A-Carrier Tape
No.
PH008-A-C-SD-1.0
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PH008-A-R-SD-1.0
TITLE
SNT-8A-A-Reel
No.
PH008-A-R-SD-1.0
SCALE
UNIT
QTY.
5,000
mm
SII Semiconductor Corporation
0.52
2.01
2
0.52
0.2 0.3
1.
2.
1
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
3.
4.
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
TITLE
No. PH008-A-L-SD-4.1
SNT-8A-A
-Land Recommendation
PH008-A-L-SD-4.1
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
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1.0-2016.01
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