S-93C46B/56B/66B
www.sii-ic.com © Seiko Instruments Inc., 2002-2010
3-WIRE SERIAL E2PROM
Rev.7.0_00
The S-93C46B/56B/66B is a 3-wire, high speed, low current consumption, 1/2/4 K-bit serial E2PROM with a wide operating voltage range. It is organized as 64-word × 16-bit, 128-word × 16-bit, 256-word × 16-bit, respectively. Each is capable of sequential read, at which time addresses are automatically incremented in 16-bit blocks. The communication method is by the Microwire bus.
Features
• Low current consumption Standby: Read: Read: Write: 1.5 μA Max. (VCC = 5.5 V) 0.8 mA Max. (VCC = 5.5 V) 0.4 mA Max. (VCC = 2.5 V) 1.8 to 5.5 V 2.7 to 5.5 V
• Wide operating voltage range
• Sequential read capable • Write protect function during the low power supply voltage • Function to protect against write due to erroneous instruction recognition • Endurance: 106 cycles/word*1 (at +85°C) • Data retention: 100 years (at +25°C) 20 years (at +85°C) • S-93C46B: 1 K-bit • S-93C56B: 2 K-bit • S-93C66B: 4 K-bit • Lead-free, Sn 100%, halogen-free*2 *1. For each address (Word: 16-bit) *2. Refer to “ Product Name Structure” for details.
Packages
• 8-Pin DIP • 8-Pin SOP (JEDEC) • 8-Pin TSSOP • SNT-8A • TMSOP-8
Caution
This product is intended to use in general electronic devices such as consumer electronics, office equipment, and communications devices. Before using the product in medical equipment or automobile equipment including car audio, keyless entry and engine control unit, contact to SII is indispensable.
Seiko Instruments Inc.
1
3-WIRE SERIAL E2PROM S-93C46B/56B/66B Pin Configurations
8-Pin DIP Top view Pin No.
CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC TEST GND
Rev.7.0_00
Table 1 Symbol Description
Figure 1
S-93C46BD0I-D8S1G S-93C56BD0I-D8S1G S-93C66BD0I-D8S1G
1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground TEST*1 6 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded.
8-Pin SOP(JEDEC) Top view Pin No.
CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC TEST GND
Table 2 Symbol Description
Figure 2
S-93C46BD0I-J8T1x S-93C56BD0I-J8T1x S-93C66BD0I-J8T1x
1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground TEST*1 6 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded.
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Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
8-Pin SOP(JEDEC) (Rotated) Top view Pin No.
NC VCC CS SK 1 2 3 4 8 7 6 5 TEST GND DO DI
Table 3 Symbol Description
Figure 3
S-93C46BR0I-J8T1x S-93C56BR0I-J8T1x S-93C66BR0I-J8T1x
1 NC No connection 2 VCC Power supply 3 CS Chip select input 4 SK Serial clock input 5 DI Serial data input 6 DO Serial data output 7 GND Ground TEST*1 8 Test *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded.
8-Pin TSSOP Top view Pin No.
CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC TEST GND
Table 4 Symbol Description
Figure 4
S-93C46BD0I-T8T1x S-93C56BD0I-T8T1x S-93C66BD0I-T8T1x
1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground TEST*1 6 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded.
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
SNT-8A Top view Pin No.
CS 1 SK 2 DI 3 DO 4 8 VCC 7 NC 6 TEST 5 GND
Table 5 Symbol Description
Figure 5 S-93C46BD0I-I8T1x S-93C56BD0I-I8T1x S-93C66BD0I-I8T1x
1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground TEST*1 6 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. Remark See Dimensions for details of the package drawings.
TMSOP-8 Top view Pin No. Symbol
Table 6 Description
CS SK DI DO
1 2 3 4
8 7 6 5
VCC NC TEST GND
Figure 6
S-93C46BD0I-K8T3U S-93C56BD0I-K8T3U S-93C66BD0I-K8T3U
1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground TEST*1 6 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded.
Remark 1. See Dimensions for details of the package drawings. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products.
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Rev.7.0_00 Block Diagram
Memory array Address decoder
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
VCC GND
Data register DI
Output buffer
DO
Mode decode logic CS Clock pulse monitoring circuit Voltage detector
SK
Clock generator
Figure 7
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B Instruction Sets
1. S-93C46B
Table 7
Rev.7.0_00
Instruction SK input clock READ (Read data) WRITE (Write data) ERASE (Erase data) WRAL (Write all) ERAL (Erase all) EWEN (Write enable) EWDS (Write disable)
*1.
Start Bit 1 1 1 1 1 1 1 1
Operation Code 2 3 1 0 1 0 0 0 0 0 1 1 0 0 0 0
Address 4 A5 A5 A5 0 1 1 0 5 A4 A4 A4 1 0 1 0 6 A3 A3 A3 x x x x 7 A2 A2 A2 x x x x 8 A1 A1 A1 x x x x 9 A0 A0 A0 x x x x
Data 10 to 25 D15 to D0 Output*1 D15 to D0 Input
⎯ D15 to D0 Input ⎯ ⎯ ⎯
When the 16-bit data in the specified address has been output, the data in the next address is output.
Remark x: Don’t care
2. S-93C56B
Table 8
Instruction SK input clock READ (Read data) WRITE (Write data) ERASE (Erase data) WRAL (Write all) ERAL (Erase all) EWEN (Write enable) EWDS (Write disable)
*1.
Start Bit 1 1 1 1 1 1 1 1
Operation Code 2 3 1 0 1 0 0 0 0 0 1 1 0 0 0 0
Address 4 x x x 0 1 1 0 5 A6 A6 A6 1 0 1 0 6 A5 A5 A5 x x x x 7 A4 A4 A4 x x x x 8 A3 A3 A3 x x x x 9 A2 A2 A2 x x x x 10 A1 A1 A1 x x x x 11 A0 A0 A0 x x x x
Data 12 to 27 D15 to D0 Output*1 D15 to D0 Input
⎯ D15 to D0 Input ⎯ ⎯ ⎯
When the 16-bit data in the specified address has been output, the data in the next address is output.
Remark x: Don’t care
3. S-93C66B
Table 9
Instruction SK input clock READ (Read data) WRITE (Write data) ERASE (Erase data) WRAL (Write all) ERAL (Erase all) EWEN (Write enable) EWDS (Write disable)
*1.
Start Bit 1 1 1 1 1 1 1 1
Operation Code 2 3 1 0 1 0 0 0 0 0 1 1 0 0 0 0
Address 4 A7 A7 A7 0 1 1 0 5 A6 A6 A6 1 0 1 0 6 A5 A5 A5 x x x x 7 A4 A4 A4 x x x x 8 A3 A3 A3 x x x x 9 A2 A2 A2 x x x x 10 A1 A1 A1 x x x x 11 A0 A0 A0 x x x x
Data 12 to 27 D15 to D0 Output*1 D15 to D0 Input
⎯ D15 to D0 Input ⎯ ⎯ ⎯
When the 16-bit data in the specified address has been output, the data in the next address is output.
Remark x: Don’t care
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Rev.7.0_00 Absolute Maximum Ratings
Table 10
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Item Symbol Ratings Unit Power supply voltage VCC −0.3 to +7.0 V Input voltage VIN −0.3 to VCC +0.3 V Output voltage VOUT −0.3 to VCC V Operating ambient temperature Topr −40 to +105 °C Storage temperature Tstg −65 to +150 °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.
Recommended Operating Conditions
Table 11
Item Power supply voltage
Symbol VCC
High level input voltage
VIH
Low level input voltage
VIL
(Ta = −40 to +85°C unless otherwise specified) Conditions Min. Max. Unit READ, EWDS 1.8 5.5 V WRITE, ERASE, 2.7 5.5 V WRAL, ERAL, EWEN VCC = 4.5 to 5.5 V 2.0 VCC V VCC = 2.7 to 4.5 V 0.8 × VCC VCC V VCC = 1.8 to 2.7 V 0.8 × VCC VCC V VCC = 4.5 to 5.5 V 0.0 0.8 V VCC = 2.7 to 4.5 V 0.0 0.2 × VCC V VCC = 1.8 to 2.7 V 0.0 0.15 × VCC V
Pin Capacitance
Table 12
Item Input Capacitance Output Capacitance
Symbol CIN COUT
Conditions VIN = 0 V VOUT = 0 V
(Ta = +25°C, f = 1.0 MHz, VCC = 5.0 V) Min. Max. Unit ⎯ 8 pF ⎯ 10 pF
Endurance
Table 13
Item Symbol Operating Ambient Temperature Endurance NW −40 to +85°C *1. For each address (Word: 16 bits)
Min. 106
Max. ⎯
Unit cycles/word*1
Data Retention
Table 14
Item Data retention
Symbol
−
Operation Ambient Temperature +25°C −40 to +85°C
Min. 100 20
Max. ⎯ ⎯
Unit year year
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B DC Electrical Characteristics
Table 15
Rev.7.0_00
Item Current consumption (READ)
Symbol ICC1
Conditions DO no load
(Ta = −40 to +85°C unless otherwise specified) VCC = 4.5 to 5.5 V VCC = 2.5 to 4.5 V VCC = 1.8 to 2.5 V Unit Min. Max. Min. Max. Min. Max.
⎯
0.8
⎯
0.5
⎯
0.4
mA
Table 16
Item Current consumption (WRITE)
Symbol ICC2
Conditions DO no load
(Ta = −40 to +85°C unless otherwise specified) VCC = 4.5 to 5.5 V VCC = 2.7 to 4.5 V Unit Min. Max. Min. Max.
⎯
2.0
⎯
1.5
mA
Table 17
Item Standby current consumption Input leakage current Output leakage current Low level output voltage
Symbol
Conditions CS = GND, DO = Open, Other inputs to VCC or GND VIN = GND to VCC VOUT = GND to VCC IOL = 2.1 mA IOL = 100 μA IOH = −400 μA IOH = −100 μA IOH = −10 μA Only when write disable mode
(Ta = −40 to +85°C unless otherwise specified) VCC = VCC = VCC = 4.5 to 5.5 V 2.5 to 4.5 V 1.8 to 2.5 V Unit Min. Max. Min. Max. Min. Max.
⎯ ⎯ ⎯ ⎯ ⎯ 2.4 VCC− 0.3 VCC− 0.2
ISB ILI ILO VOL
1.5 1.0 1.0 0.4 0.1 ⎯ ⎯ ⎯
⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VCC− 0.3 VCC− 0.2
1.5 1.0 1.0
⎯ 0.1 ⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VCC− 0.2
1.5 1.0 1.0
⎯ 0.1 ⎯ ⎯ ⎯ ⎯
μA μA μA
High level output VOH voltage Write enable latch VDH data hold voltage
V V V V V V
1.5
1.5
1.5
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Rev.7.0_00 AC Electrical Characteristics
Table 18 Measurement Conditions
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Input pulse voltage Output reference voltage Output load
0.1 × VCC to 0.9 × VCC 0.5 × VCC 100 pF
Table 19
(Ta = −40 to +85°C unless otherwise specified) Item Symbol VCC = 4.5 to 5.5 V VCC = 2.5 to 4.5 V VCC = 1.8 to 2.5 V Min. Max. Min. Max. Min. Max. Unit
CS setup time tCSS 0.2 ⎯ 0.4 ⎯ 1.0 ⎯ μs CS hold time tCSH 0 ⎯ 0 ⎯ 0 ⎯ μs CS deselect time tCDS 0.2 ⎯ 0.2 ⎯ 0.4 ⎯ μs Data setup time tDS 0.1 ⎯ 0.2 ⎯ 0.4 ⎯ μs Data hold time tDH 0.1 ⎯ 0.2 ⎯ 0.4 ⎯ μs Output delay time tPD ⎯ 0.4 ⎯ 0.8 ⎯ 2.0 μs Clock frequency*1 0 2.0 0 0.5 0 0.25 MHz fSK SK clock time “L” *1 0.1 ⎯ 0.5 ⎯ 1.0 ⎯ μs tSKL SK clock time “H” *1 0.1 ⎯ 0.5 ⎯ 1.0 ⎯ μs tSKH Output disable time tHZ1, tHZ2 0 0.15 0 0.5 0 1.0 μs Output enable time tSV 0 0.15 0 0.5 0 1.0 μs *1. The clock cycle of the SK clock (frequency: fSK) is 1/fSK μs. This clock cycle is determined by a combination of several AC characteristics, so be aware that even if the SK clock cycle time is minimized, the clock cycle (1/fSK) cannot be made equal to tSKL(Min.) + tSKH(Min.).
Table 20
Item Write time tPR
Symbol
Min. ⎯
(Ta = −40 to +85°C unless otherwise specified) VCC = 2.7 to 5.5 V Unit Typ. Max. 4.0 8.0 ms
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
tCSS CS tSKH SK tDS DI tDH
1/fSK
*2
tCDS
tSKL
tCSH
tDS
tDH
Valid data tPD High-Z
*1
Valid data tPD High-Z
DO
(READ) DO High-Z
tSV
tHZ2
tHZ1 High-Z
(VERIFY)
*1. *2.
Indicates high impedance. 1/fSK is the SK clock cycle. This clock cycle is determined by a combination of several AC characteristics, so be aware that even if the SK clock cycle time is minimized, the clock cycle (1/fSK) cannot be made equal to tSKL(Min.) + tSKH(Min.).
Figure 8 Timing Chart
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Rev.7.0_00 Operation
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
All instructions are executed by inputting DI in synchronization with the rising edge of SK after CS goes high. An instruction set is input in the order of start bit, instruction, address, and data. Instruction input finishes when CS goes low. A low level must be input to CS between commands during tCDS. While a low level is being input to CS, the S-93C46B/56B/66B is in standby mode, so the SK and DI inputs are invalid and no instructions are allowed.
Start Bit
A start bit is recognized when the DI pin goes high at the rise of SK after CS goes high. bit is not recognized even if the SK pulse is input as long as the DI pin is low. After CS goes high, a start
1.
Dummy clock
SK clocks input while the DI pin is low before a start bit is input are called dummy clocks. Dummy clocks are effective when aligning the number of instruction sets (clocks) sent by the CPU with those required for serial memory operation. For example, when a CPU instruction set is 16 bits, the number of instruction set clocks can be adjusted by inserting a 7-bit dummy clock for the S-93C46B and a 5-bit dummy clock for the S93C56B/66B.
2.
Start bit input failure
• When the output status of the DO pin is high during the verify period after a write operation, if a high level is input to the DI pin at the rising edge of SK, the S-93C46B/56B/66B recognizes that a start bit has been input. To prevent this failure, input a low level to the DI pin during the verify operation period (refer to “4.1 Verify operation”). • When a 3-wire interface is configured by connecting the DI input pin and DO output pin, a period in which the data output from the CPU and the serial memory collide may be generated, preventing successful input of the start bit. Take the measures described in “ 3-Wire Interface (Direct Connection between DI and DO)”.
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
3.
Reading (READ)
The READ instruction reads data from a specified address. After CS has gone high, input an instruction in the order of the start bit, read instruction, and address. Since the last input address (A0) has been latched, the output status of the DO pin changes from high impedance (High-Z) to low, which is held until the next rise of SK. 16-bit data starts to be output in synchronization with the next rise of SK.
3. 1 Sequential read
After the 16-bit data at the specified address has been output, inputting SK while CS is high automatically increments the address, and causes the 16-bit data at the next address to be output sequentially. The above method makes it possible to read the data in the whole memory space. The last address (An A1 A0 = 1 1 1) rolls over to the top address (An A1 A0 = 0 0 0).
CS SK
1
2
3
4
5
6
7
8
9
10
11
12
23
24
25
26
27
28
39
40
41
42
43
44
DI
①
1
0
A5
A4
A3
A2
A1
A0
DO
High-Z
0
D15
D14
D13
D2
D1
D0
D15
D14
D13
D2
D1
D0
D15
D14
D13
High-Z
ADRINC
ADRINC
Figure 9
Read Timing (S-93C46B)
CS SK
1 2 3 4 5 6 7 8 9 10 11 12 13 14 24 25 26 27 28 29 40 41 42 43 44 45
DI
①
1
0
A6
A5
A4
A3
A2
A1
A0
DO
High-Z
x : S-93C56B A7: S-93C66B
0 D15 D14 D13 D2 D1 D0 D15 D14 D13 D2 D1 D0 D15 D14 D13
High-Z
ADRINC
ADRINC
Figure 10
Read Timing (S-93C56B, S-93C66B)
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Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
4.
Writing (WRITE, ERASE, WRAL, ERAL)
A write operation includes four write instructions: data write (WRITE), data erase (ERASE), chip write (WRAL), and chip erase (ERAL). A write instruction (WRITE, ERASE, WRAL, ERAL) starts a write operation to the memory cell when a low level is input to CS after a specified number of clocks have been input. The SK and DI inputs are invalid during the write period, so do not input an instruction. Input an instruction while the output status of the DO pin is high or high impedance (High-Z). A write operation is valid only in program enable mode (refer to “5. Write enable (EWEN) and write disable (EWDS)”).
4. 1 Verify operation
A write operation executed by any instruction is completed within 8 ms (write time tPR: typically 4 ms), so if the completion of the write operation is recognized, the write cycle can be minimized. A sequential operation to confirm the status of a write operation is called a verify operation.
(1) Operation After the write operation has started (CS = low), the status of the write operation can be verified by confirming the output status of the DO pin by inputting a high level to CS again. This sequence is called a verify operation, and the period that a high level is input to the CS pin after the write operation has started is called the verify operation period. The relationship between the output status of the DO pin and the write operation during the verify operation period is as follows. • DO pin = low: Writing in progress (busy) • DO pin = high: Writing completed (ready) (2) Operation example There are two methods to perform a verify operation: Waiting for a change in the output status of the DO pin while keeping CS high, or suspending the verify operation (CS = low) once and then performing it again to verify the output status of the DO pin. The latter method allows the CPU to perform other processing during the wait period, allowing an efficient system to be designed. Caution 1. Input a low level to the DI pin during a verify operation. 2. If a high level is input to the DI pin at the rise of SK when the output status of the DO pin is high, the S-93C46B/56B/66B latches the instruction assuming that a start bit has been input. In this case, note that the DO pin immediately enters a high-impedance (High-Z) state.
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
4. 2
Writing data (WRITE)
To write 16-bit data to a specified address, change CS to high and then input the WRITE instruction, address, and 16-bit data following the start bit. The write operation starts when CS goes low. There is no need to set the data to 1 before writing. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the WRITE instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”.
tCDS Standby
CS SK DI DO
1 2 0 1 3 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 D15 25 D0 tSV High-Z tPR
Verify
tHZ1
busy ready
High-Z
Figure 11
Data Write Timing (S-93C46B)
tCDS
CS SK DI DO
1 2 0 1 3 4 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 D15 27 D0 tSV
Verify
Standby
High-Z x : S-93C56B A7: S-93C66B
tHZ1
busy ready
tPR
High-Z
Figure 12
Data Write Timing (S-93C56B, S-93C66B)
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Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
4. 3
Erasing data (ERASE)
To erase 16-bit data at a specified address, set all 16 bits of the data to 1, change CS to high, and then input the ERASE instruction and address following the start bit. There is no need to input data. The data erase operation starts when CS goes low. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the ERASE instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”.
tCDS
CS SK DI DO
tPR 1 2 1 1 3 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 tSV High-Z
Verify
Standby
busy
tHZ1
ready
High-Z
Figure 13
Data Erase Timing (S-93C46B)
tCDS
CS SK DI DO
1 2 1 3 1 4 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 tSV High-Z x : S-93C56B A7: S-93C66B tPR
Verify
Standby
busy
tHZ1
ready
High-Z
Figure 14
Data Erase Timing (S-93C56B, S-93C66B)
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
4. 4
Writing to chip (WRAL)
To write the same 16-bit data to the entire memory address space, change CS to high, and then input the WRAL instruction, an address, and 16-bit data following the start bit. Any address can be input. The write operation starts when CS goes low. There is no need to set the data to 1 before writing. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the WRAL instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”.
tCDS
CS SK
1 2 0 3 0 0 4 5 1 4Xs 6 7 8 9 10 D15 25 D0 tSV
Verify
Standby
DI
DO
High-Z tPR
busy
tHZ1
ready
High-Z
Figure 15
Chip Write Timing (S-93C46B)
tCDS
CS SK DI DO
1 2 0 0 3 0 4 1 6Xs 5 6 7 8 9 10 11 12 D15 27 D0 tSV
Verify
Standby
tHZ1
busy ready
High-Z
tPR
High-Z
Figure 16
Chip Write Timing (S-93C56B, S-93C66B)
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Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
4. 5
Erasing chip (ERAL)
To erase the data of the entire memory address space, set all the data to 1, change CS to high, and then input the ERAL instruction and an address following the start bit. Any address can be input. There is no need to input data. The chips erase operation starts when CS goes low. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the ERAL instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”.
Standby
CS SK DI DO
1 2 3 4 5 6 7 8 9
tCDS
Verify
0
0
1 High-Z
0 4Xs tSV busy tPR ready High-Z tHZ1
Figure 17
Chip Erase Timing (S-93C46B)
CS
tCDS
Verify 1 2 3 4 5 6 7 8 9 10 11
Standby
SK DI DO
0
0
1 High-Z
0 6Xs tSV busy tPR ready High-Z tHZ1
Figure 18
Chip Erase Timing (S-93C56B, S-93C66B)
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3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
5.
Write enable (EWEN) and write disable (EWDS)
The EWEN instruction is an instruction that enables a write operation. The status in which a write operation is enabled is called the program enable mode. The EWDS instruction is an instruction that disables a write operation. The status in which a write operation is disabled is called the program disable mode. After CS goes high, input an instruction in the order of the start bit, EWEN or EWDS instruction, and address (optional). Each mode becomes valid by inputting a low level to CS after the last address (optional) has been input.
CS SK DI
1 0 2 3 0 4 5 6 7 8 9
Standby
11 = EWEN 00 = EWDS
4Xs
Figure 19
Write Enable/Disable Timing (S-93C46B)
CS SK DI
1 2 0 3 0 4 5 6 7 8 9 10 11
Standby
11 = EWEN 00 = EWDS
6Xs
Figure 20
Write Enable/Disable Timing (S-93C56B, S-93C66B)
(1) Recommendation for write operation disable instruction It is recommended to implement a design that prevents an incorrect write operation when a write instruction is erroneously recognized by executing the write operation disable instruction when executing instructions other than write instruction, and immediately after power-on and before power off.
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Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Write Protect Function during the Low Power Supply Voltage
The S-93C46B/56B/66B provides a built-in detector. When the power supply voltage is low or at power application, the write instructions (WRITE, ERASE, WRAL, and ERAL) are cancelled, and the write disable state (EWDS) is automatically set. The detection voltage is 1.75 V typ., the release voltage is 2.05 V typ., and there is a hysteresis of about 0.3 V (refer to Figure 21). Therefore, when a write operation is performed after the power supply voltage has dropped and then risen again up to the level at which writing is possible, a write enable instruction (EWEN) must be sent before a write instruction (WRITE, ERASE, WRAL, or ERAL) is executed. When the power supply voltage drops during a write operation, the data being written to an address at that time is not guaranteed.
Hysteresis About 0.3 V Release voltage (+VDET) 2.05 V Typ.
Power supply voltage Detection voltage (−VDET) 1.75 V Typ.
Write instruction cancelled Write disable state (EWDS) automatically set
Figure 21
Operation during Low Power Supply Voltage
Seiko Instruments Inc.
19
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
Function to Protect Against Write due to Erroneous Instruction Recognition
The S-93C46B/56B/66B provides a built-in clock pulse monitoring circuit which is used to prevent an erroneous write operation by canceling write instructions (WRITE, ERASE, WRAL, and ERAL) recognized erroneously due to an erroneous clock count caused by the application of noise pulses or double counting of clocks. Instructions are cancelled if a clock pulse more or less than specified number decided by each write operation (WRITE, ERASE, WRAL, or ERAL) is detected. Erroneous recognition of program disable instruction (EWDS) as erase instruction (ERASE)
Example of S-93C46B
Noise pulse
CS 1 SK 2 3 4 5 6 7 8 9
DI 1 0 0 0 0 0 0 0 0
Input EWDS instruction Erroneous recognition as ERASE instruction due to noise pulse
1 1 10
0
0
00
0
0
0
0
In products that do not include a clock pulse monitoring circuit, FFFF is mistakenly written on address 00h. However the S-93C46B detects the overcount and cancels the instruction without performing a write operation.
Figure 22
Example of Clock Pulse Monitoring Circuit Operation
20
Seiko Instruments Inc.
Rev.7.0_00 3-Wire Interface (Direct Connection between DI and DO)
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
There are two types of serial interface configurations: a 4-wire interface configured using the CS, SK, DI, and DO pins, and a 3-wire interface that connects the DI input pin and DO output pin. When the 3-wire interface is employed, a period in which the data output from the CPU and the data output from the serial memory collide may occur, causing a malfunction. To prevent such a malfunction, connect the DI and DO pins of the S-93C46B/56B/66B via a resistor (10 to 100 kΩ) so that the data output from the CPU takes precedence in being input to the DI pin (refer to “Figure 23 Connection of 3-Wire Interface”).
CPU S-93C46B/56B/66B
SIO
DI DO R : 10 to 100 kΩ
Figure 23
Connection of 3-Wire Interface
I/O Pin
1. Connection of input pins
All the input pins of the S-93C46B/56B/66B employ a CMOS structure, so design the equipment so that high impedance will not be input while the S-93C46B/56B/66B is operating. Especially, deselect the CS input (a low level) when turning on/off power and during standby. When the CS pin is deselected (a low level), incorrect data writing will not occur. Connect the CS pin to GND via a resistor (10 to 100 kΩ pull-down resistor). To prevent malfunction, it is recommended to use equivalent pull-down resistors for pins other than the CS pin.
2.
Equivalent circuit of input and output pin
The following shows the equivalent circuits of input pins of the S-93C46B/56B/66B. None of the input pins incorporate pull-up and pull-down elements, so special care must be taken when designing to prevent a floating status. Output pins are high-level/low-level/high-impedance tri-state outputs. The TEST pin is disconnected from the internal circuit by a switching transistor during normal operation. As long as the absolute maximum rating is satisfied, the TEST pin and internal circuit will never be connected.
Seiko Instruments Inc.
21
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
2. 1
Input pin
CS
Figure 24
CS Pin
SK, DI
Figure 25
SK, DI Pin
TEST
Figure 26
TEST Pin
22
Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
2. 2
Output pin
VCC
DO
Figure 27
DO Pin
3.
Input pin noise elimination time
The S-93C46B/56B/66B include a built-in low-pass filter to eliminate noise at the SK, DI, and CS pins. This means that if the supply voltage is 5.0 V (at room temperature), noise with a pulse width of 20 ns or less can be eliminated. Note, therefore, the noise with a pulse width of more than 20 ns will be recognized as a pulse if the voltage exceeds VIH/VIL.
Precaution
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.
Seiko Instruments Inc.
23
3-WIRE SERIAL E2PROM S-93C46B/56B/66B Characteristics (Typical Data)
1. DC Characteristics
Current consumption (READ) ICC1 vs. ambient temperature Ta 1. 2 1. 1
Rev.7.0_00
Current consumption (READ) ICC1 vs. ambient temperature Ta
VCC = 3.3 V fSK = 500 kHz DATA = 0101 0.4 ICC1 (mA)
VCC = 5.5 V fSK = 2 MHz DATA = 0101 0.4 ICC1 (mA) 0.2
0.2
0
−40
0 Ta (°C)
85
0
−40
0 Ta (°C)
85
1. 3
Current consumption (READ) ICC1 vs. ambient temperature Ta
1. 4
Current consumption (READ) ICC1 vs. power supply voltage VCC
VCC = 1.8 V fSK = 10 kHz DATA = 0101 0.4 ICC1 (mA) 0.2
ICC1 (mA) 0.2 0.4
Ta = 25°C fSK = 1 MHz, 500 kHz DATA = 0101
1 MHz
0
−40
0 Ta (°C)
85
0
2
3
∼
500 kHz 4 5 6 7
VCC (V)
1. 5
Current consumption (READ) ICC1 vs. power supply voltage VCC
Ta = 25°C fSK = 100 kHz, 10 kHz DATA = 0101 0.4 ICC1 (mA) 0.2 10 kHz 0 2 3 4 56 7 100 kHz
1. 6
Current consumption (READ) ICC1 vs. Clock frequency fSK
VCC = 5.0 V Ta = 25°C 0.4 ICC1 (mA)
0.2
0
10 k
100 k
1 M 2M 10M
fSK (Hz)
VCC (V)
24
Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
1. 7
Current consumption (WRITE) ICC2 vs. ambient temperature Ta
1. 8
Current consumption (WRITE) ICC2 vs. ambient temperature Ta
VCC = 3.3 V
VCC = 5.5 V 1.0 ICC2 (mA) 0.5
ICC2 (mA) 0.5 1.0
0
−40
0 Ta (°C)
85
0
−40
0 Ta (°C)
85
1. 9
Current consumption (WRITE) ICC2 vs. ambient temperature Ta
1. 10
Current consumption (WRITE) ICC2 vs. power supply voltage VCC
VCC = 2.7 V 1.0 ICC2 (mA) 0.5
ICC2 (mA) 0.5 1.0
Ta = 25°C
0
−40
0 Ta (°C)
85
0
2
3
4
56
7
VCC (V)
1. 11
Current consumption in standby mode ISB vs. ambient temperature Ta
VCC = 5.5 V CS = GND 1.0 ISB (μA) 0.5
1. 12
Current consumption in standby mode ISB vs. power supply voltage VCC
Ta = 25°C CS = GND 1.0 ISB (μA) 0.5
0
−40
0 Ta (°C)
85
0
2
3
4
56
7
VCC (V)
Seiko Instruments Inc.
25
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
1. 13
Input leakage current ILI vs. ambient temperature Ta
VCC=5.5 V CS, SK, DI, TEST=0 V 1.0 lLI (μA) 0.5
1. 14
Input leakage current ILI vs. ambient temperature Ta
VCC = 5.5 V CS, SK, DI, TEST = 5.5 V 1.0 ILI (μA) 0.5
0
0
−40
0 Ta (°C)
85
-40
0 Ta (°C)
85
1. 15
Output leakage current ILO vs. ambient temperature Ta
1. 16
Output leakage current ILO vs. ambient temperature Ta
VCC = 5.5 V DO = 5.5 V 1.0 ILO (μA)
VCC = 5.5 V DO = 0 V 1.0 ILO (μA) 0.5
0.5
0
−40
0 Ta (°C)
85
0
−40
0 Ta (°C)
85
1. 17
High-level output voltage VOH vs. ambient temperature Ta VCC = 4.5 V IOH = −400 μA 4.6
VOH (V) 4.4 4.2
1. 18
High-level output voltage VOH vs. ambient temperature Ta VCC = 2.7 V IOH = −100 μA 2.7
VOH (V) 2.6 2.5
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
26
Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
1. 19
High-level output voltage VOH vs. ambient temperature Ta
1. 20
High-level output voltage VOH vs. ambient temperature Ta
2.5 VOH (V) 2.4 2.3
VCC = 2.5 V IOH = −100 μA
1.9 VOH (V) 1.8 1.7
VCC = 1.8 V IOH = −10 μA
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
1. 21
Low-level output voltage VOL vs. ambient temperature Ta
1. 22
Low-level output voltage VOL vs. ambient temperature Ta
0.3 VOL (V) 0.2 0.1
VCC = 4.5 V IOL = 2.1 mA
0.03 VOL 0.02 (V) 0.01
VCC = 1.8 V IOL = 100 μA
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
1. 23
High-level output current IOH vs. ambient temperature Ta
1. 24
High-level output current IOH vs. ambient temperature Ta
VCC = 2.7 V VOH = 2.4 V −2 IOH (mA)
VCC = 4.5 V VOH = 2.4 V −20.0 IOH (mA) −10.0
−1
0
−40
0 Ta (°C)
85
0
−40
0 Ta (°C)
85
Seiko Instruments Inc.
27
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
1. 25
High-level output current IOH vs. ambient temperature Ta
1. 26
High-level output current IOH vs. ambient temperature Ta
VCC = 2.5 V VOH = 2.2 V −2 IOH (mA) −1
VCC = 1.8 V VOH = 1.6 V −1.0 IOH (mA) −0.5
0
−40
0
0 Ta (°C) 85
−40
0 Ta (°C)
85
1. 27
Low-level output current IOL vs. ambient temperature Ta
VCC = 4.5 V VOL = 0.4 V 20 IOL (mA) 10
1. 28
Low-level output current IOL vs. ambient temperature Ta
VCC = 1.8 V VOL = 0.1 V 1.0 IOL (mA) 0.5
0
−40
0
0 Ta (°C) 85
−40
0 Ta (°C)
85
1. 29
Input inverted voltage VINV vs. power supply voltage VCC
1. 30
Input inverted voltage VINV vs. ambient temperature Ta
VCC = 5.0 V CS, SK, DI 3.0 VINV (V)
Ta = 25°C CS, SK, DI 3.0 VINV (V) 1.5
2.0
0
1
2
3
45
67
0
−40
0 Ta (°C)
85
VCC (V)
28
Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
1. 31 Low supply voltage detection voltage −VDET vs. ambient temperature Ta
1. 32 Low supply voltage release voltage +VDET vs. ambient temperature Ta
2.0 −VDET (V) 1.0
+VDET (V)
2.0
1.0
0
−40
0 Ta (°C)
85
0
−40
0 Ta (°C)
85
Seiko Instruments Inc.
29
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
Rev.7.0_00
2.
AC Characteristics
Maximum operating frequency fMAX. vs. power supply voltage VCC
Ta = 25°C 2M 1M 100k 10k 1 2 3 4 5 4 tPR (ms) 2
2. 1
2. 2
Write time tPR vs. power supply voltage VCC
Ta = 25°C
fMAX. (Hz)
1
2
3
4
56
7
VCC (V)
VCC (V)
2. 3
Write time tPR vs. ambient temperature Ta
2. 4
Write time tPR vs. ambient temperature Ta
VCC = 3.0 V 6 tPR (ms) 4 2
VCC = 5.0 V 6 tPR (ms) 4 2
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
2. 5
Write time tPR vs. ambient temperature Ta
2. 6
Data output delay time tPD vs. ambient temperature Ta
VCC = 2.7 V 6 tPR (ms) 4 2 tPD (μs) 0.2 0.1 0.3
VCC = 4.5 V
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
30
Seiko Instruments Inc.
Rev.7.0_00
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
2. 7
Data output delay time tPD vs. ambient temperature Ta
2. 8
Data output delay time tPD vs. ambient temperature Ta
VCC = 2.7 V 0.6 tPD (μs) 0.4 0.2 tPD (μs) 1.0 0.5 1.5
VCC = 1.8 V
−40
0 Ta (°C)
85
−40
0 Ta (°C)
85
Seiko Instruments Inc.
31
3-WIRE SERIAL E2PROM S-93C46B/56B/66B Product Name Structure
1. Product name
8-Pin SOP (JEDEC), 8-Pin TSSOP, SNT-8A 1. 1
Rev.7.0_00
S-93CxxB
x
0
I
-
xxxx
x
Environmental code U: Lead-free (Sn 100%), halogen-free G: Lead-free (for details, please contact our sales office) Package name (abbreviation) and IC packing specifications J8T1: 8-Pin SOP(JEDEC), Tape T8T1: 8-Pin TSSOP, Tape I8T1: SNT-8A, Tape Operation temperature I: −40 to +85°C Fixed Pin assignment D: 8-Pin SOP(JEDEC) 8-Pin TSSOP SNT-8A R: 8-Pin SOP(JEDEC) (Rotated) Product name S-93C46B : 1 K-bit S-93C56B : 2 K-bit S-93C66B : 4 K-bit
1. 2
TMSOP-8
S-93CxxB
D0
I
-
K8T3
U
Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and IC packing specifications K8T3: TMSOP-8, Tape Operation temperature I: −40 to +85°C Fixed Product name S-93C46B : 1 K-bit S-93C56B : 2 K-bit S-93C66B : 4 K-bit
32
Seiko Instruments Inc.
Rev.7.0_00
1. 3 8-Pin DIP
3-WIRE SERIAL E2PROM S-93C46B/56B/66B
S-93CxxB
D0
I
-
D8S1
G
Environmental code G: Lead-free (for details, please contact our sales office) Package name (abbreviation) and IC packing specifications D8S1: 8-Pin DIP, Tube Operation temperature I: −40 to +85°C Fixed Product name S-93C46B : 1 K-bit S-93C56B : 2 K-bit S-93C66B : 4 K-bit
2.
Package
Package name 8-Pin DIP 8-Pin SOP (JEDEC) 8-Pin TSSOP SNT-8A TMSOP-8 Drawing code Tape Reel ⎯ ⎯ FJ008-D-C-SD FJ008-D-R-SD FJ008-D-C-SD FJ008-D-R-S1 FT008-E-C-SD FT008-E-R-SD FT008-E-C-SD FT008-E-R-S1 PH008-A-C-SD PH008-A-R-SD FM008-A-C-SD FM008-A-R-SD
Environmental code = G Environmental code = U Environmental code = G Environmental code = U
Package DP008-F-P-SD FJ008-A-P-SD FJ008-A-P-SD FT008-A-P-SD FT008-A-P-SD PH008-A-P-SD FM008-A-P-SD
Land ⎯ ⎯ ⎯ PH008-A-L-SD ⎯
Seiko Instruments Inc.
33
9.6(10.6max.)
8 5
1
4
0.89
1.3
7.62
2.54
0.48±0.1
0.25 -0.05 0° to 15°
+0.11
No. DP008-F-P-SD-3.0
TITLE No. SCALE UNIT
DIP8-F-PKG Dimensions DP008-F-P-SD-3.0
mm
Seiko Instruments Inc.
5.02±0.2
8 5
1
4
0.20±0.05
1.27
0.4±0.05
No. FJ008-A-P-SD-2.1
TITLE No. SCALE UNIT
SOP8J-D-PKG Dimensions FJ008-A-P-SD-2.1
mm
Seiko Instruments Inc.
2.0±0.05 ø1.55±0.05
4.0±0.1(10 pitches:40.0±0.2) 0.3±0.05
ø2.0±0.05 5°max.
8.0±0.1
2.1±0.1
6.7±0.1
1
8
4
5
Feed direction
No. FJ008-D-C-SD-1.1
TITLE No. SCALE UNIT
SOP8J-D-Carrier Tape FJ008-D-C-SD-1.1
mm
Seiko Instruments Inc.
60°
2±0.5 Enlarged drawing in the central part ø21±0.8 2±0.5 ø13±0.2 13.5±0.5
No. FJ008-D-R-SD-1.1
TITLE No. SCALE UNIT
SOP8J-D-Reel FJ008-D-R-SD-1.1
QTY. mm 2,000
Seiko Instruments Inc.
60°
2±0.5 Enlarged drawing in the central part ø21±0.8 2±0.5 ø13±0.2 13.5±0.5
No. FJ008-D-R-S1-1.0
TITLE No. SCALE UNIT mm
SOP8J-D-Reel FJ008-D-R-S1-1.0
QTY. 4,000
Seiko Instruments Inc.
3.00 -0.2
8 5
+0.3
1
4
0.17±0.05
0.2±0.1 0.65
No. FT008-A-P-SD-1.1
TITLE No. SCALE UNIT
TSSOP8-E-PKG Dimensions FT008-A-P-SD-1.1
mm
Seiko Instruments Inc.
4.0±0.1 2.0±0.05 ø1.55±0.05 0.3±0.05
8.0±0.1
ø1.55 -0.05
+0.1
(4.4)
6.6 -0.2
+0.4
1 4
8 5
Feed direction
No. FT008-E-C-SD-1.0
TITLE No. SCALE UNIT
TSSOP8-E-Carrier Tape FT008-E-C-SD-1.0
mm
Seiko Instruments Inc.
13.4±1.0 Enlarged drawing in the central part ø21±0.8 2±0.5 ø13±0.5 17.5±1.0
No. FT008-E-R-SD-1.0
TITLE No. SCALE UNIT
TSSOP8-E-Reel FT008-E-R-SD-1.0
QTY. mm 3,000
Seiko Instruments Inc.
13.4±1.0 Enlarged drawing in the central part ø21±0.8 2±0.5 ø13±0.5 17.5±1.0
No. FT008-E-R-S1-1.0
TITLE No. SCALE UNIT
TSSOP8-E-Reel FT008-E-R-S1-1.0
QTY. mm 4,000
Seiko Instruments Inc.
1 .97±0.03
8 7 6 5
1
0.5
2
3
4
0.08 -0.02
+0.05
0.48±0.02
0.2±0.05
No. PH008-A-P-SD-2.0
TITLE No. SCALE UNIT
SNT-8A-A-PKG Dimensions PH008-A-P-SD-2.0
mm
Seiko Instruments Inc.
ø1.5 -0
+0.1
2.0±0.05
4.0±0.1
0.25±0.05
5°
2.25±0.05
ø0.5±0.1
4.0±0.1
0.65±0.05
4 321
5 6 78
Feed direction
No. PH008-A-C-SD-1.0
TITLE No. SCALE UNIT
SNT-8A-A-Carrier Tape PH008-A-C-SD-1.0
mm
Seiko Instruments Inc.
12.5max.
Enlarged drawing in the central part ø13±0.2
9.0±0.3
(60°)
(60°)
No. PH008-A-R-SD-1.0
TITLE No. SCALE UNIT mm
SNT-8A-A-Reel PH008-A-R-SD-1.0
QTY. 5,000
Seiko Instruments Inc.
0.52
2.01
0.52
0.3
0.2
0.3
0.2
0.3
0.2
0.3
Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff.
No. PH008-A-L-SD-3.0
TITLE No. SCALE UNIT
SNT-8A-A-Land Recommendation
PH008-A-L-SD-3.0
mm
Seiko Instruments Inc.
2.90±0.2
8 5
1
4
0.13±0.1
0.2±0.1 0.65±0.1
No. FM008-A-P-SD-1.0
TITLE No. SCALE UNIT
TMSOP8-A-PKG Dimensions FM008-A-P-SD-1.0
mm
Seiko Instruments Inc.
2.00±0.05 4.00±0.1 4.00±0.1 1.55 -0
+0.1
1.00±0.1
1.05±0.05
0.30±0.05
3.25±0.05
4
1
5
8
Feed direction
No. FM008-A-C-SD-1.0
TITLE No. SCALE UNIT
TMSOP8-A-Carrier Tape FM008-A-C-SD-1.0
mm
Seiko Instruments Inc.
16.5max.
13.0±0.3
Enlarged drawing in the central part 13±0.2
(60°)
(60°)
No. FM008-A-R-SD-1.0
TITLE No. SCALE UNIT mm
TMSOP8-A-Reel FM008-A-R-SD-1.0
QTY. 4,000
Seiko Instruments Inc.
www.sii-ic.com • •
The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
• • • •