UG169: Si8285/86-EVB User's Guide
This document describes the operation of the Si8285_86-EVB.
KEY POINTS
The Si8285_86 Evaluation Kit contains the following items:
• Si8285_86-EVB
• Si8285CD-IS and Si8286CD-IS installed on the evaluation board.
• Discusses hardware overview and setup,
including:
• Si8285/86 low voltage side connections.
• Si8285/86 isolated gate drive
connections.
• Offers alternative configurations.
• Demonstrates driver functionality.
• Shows Si8285/86-EVB schematics and
silkscreen/copper layout.
• Includes a bill of materials and ordering
guide.
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UG169: Si8285/86-EVB User's Guide • Overview and Setup
1. Overview and Setup
1.1 Hardware
Si8285/86-EVB can be used to demonstrate the isolated gate drive capabilities of the installed Si8285CD-IS and Si8286CD-IS, as well
as their features specific to driving MOSFETs and IGBTs. The EVB is split into two halves that operate independently—one for Si8285
and the other for Si8286.
Si8285 Low Voltage Side Connections
Supply power to the input side of Si8285 by applying 3 to 5.5 VDC to VDDA at terminal block J1. LED D1 above terminal block J1
illuminates to show power applied.
J7–J11 single pin headers provide access to the IN+, IN–, RSTb inputs, and FLTb and RDY outputs of the Si8285. These signals can
be brought out to an external microcontroller using a ribbon cable (not supplied). FLTb output signal has a pull-up resistor to VDDA and
is open drain output. This allows multiple gate drivers' FLTb outputs to share the same microcontroller input.
Driver functionality can be exercised without a microcontroller by applying a GNDA referenced PWM signal from a function generator to
the IN+ and IN– inputs. Maximum input voltage is VDDA.
Si8285 Isolated Gate Drive Connections
Supply power to the output side of the Si8285 by applying VDDB, VMID, and VSSB at terminal block J3. In typical MOSFET driver
applications, VMID = VSSB. When driving IGBTs, typical values for VDDB and VSSB IGBTs are +15 V and –9 V, with respect to VMID.
LED D2 above terminal block J3 illuminates to show power applied.
There are four different load options for the Si8285 gate driver:
1. Through holes for a MOSFET or an IGBT in a TO-247 package (not supplied) at Q1.
2. Through holes for a MOSFET or an IGBT in a TO-220 package (not supplied) at Q2.
3. Through holes for a capacitor (not supplied) at C8.
4. Pads for a 1206-size surface mount capacitor (not supplied) at C9.
From top to bottom, the through holes for the transistor leads are Source, Drain, and Gate. Load transistors are biased by applying
voltage across VPWR and VMID terminals of J2. This voltage should not exceed the rated VDS of the transistor or the 300 V blocking
voltage rating of installed D3. Supply voltage constraints are summarized in Table 1.1 Supply Voltage Constraints on page 3.
Note: Si8285 can drive the gate of either high-side or low-side MOSFET or IGBT in a bridge configuration. When used as a high-side
gate driver, VMID is connected to the load. When used as a low-side gate driver, VMID is the return for the load.
For capacitive loads, capacitor value should be chosen to match the gate capacitance of the desired transistor.
Si8286 Low Voltage Side Connections
Supply power to the input side of Si8286 by applying 3 to 5.5 VDC to VDDA at terminal block J4. LED D4 above terminal block J4
illuminates to show power applied.
J14-J17 single pin headers provide access to the IN+, IN–, RSTb input, and the FLTb output of the Si8286. These signals can be
brought out to an external microcontroller using a ribbon cable (not supplied). FLTb output signal has a pull-up resistor to VDDA and is
an open drain output. This allows multiple gate drivers' FLTb outputs to share the same microcontroller input.
2
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UG169: Si8285/86-EVB User's Guide • Overview and Setup
Si8286 Isolated Gate Drive Connections
Supply power to the output side of the Si8286 by applying VDDB, VMID, and VSSB at terminal block J6. In typical MOSFET driver
applications, VMID = VSSB. When driving IGBTs, typical values for VDDB and VSSB IGBTs are +15 V and –9 V, with respect to VMID.
LED D5 above terminal block J6 illuminates to show power applied.
There are four different load options for Si8286 gate driver:
1. Through holes for a MOSFET or an IGBT in a TO-247 package (not supplied) at Q3.
2. Through holes for a MOSFET or an IGBT in a TO-220 package (not supplied) at Q4.
3. Through holes for a capacitor (not supplied) at C17.
4. Pads for a 1206-size surface mount capacitor (not supplied) at C18.
From top to bottom, the through holes for the transistor leads are Source, Drain, and Gate. Load transistors are biased by applying
voltage across VPWR and VMID terminals of J5. This voltage should not exceed the rated VDS of the transistor or the 300 V blocking
voltage rating of installed D6.
Note: Si8286 can drive the gate of either high-side or low-side MOSFET or IGBT in a bridge configuration. When used as a high-side
gate driver, VMID is connected to the load. When used as a low-side gate driver, VMID is the return for the load.
For capacitive loads, capacitor value should be chosen to match the gate capacitance of the desired transistor. Supply voltage
constraints are summarized in the table below.
Table 1.1. Supply Voltage Constraints
3.0 V ≤ VDDA – GNDA ≤ 5.5 V
VSSB ≤ VMID < VDDB
UVLO+ < VDDB – VSSB < 30 V
VPWR < VDS (Q)
VPWR < 300 V
|GNDA-VSSB| < 5 kV
Note:
1. UVLO+ for the Si8285CD-IS and Si8286CD-IS is 12.3 V typically.
1.2 Alternative Configurations
Positive Voltage Gate Drive Only
The standard configuration for the gate driver is to apply positive voltage, VDDB–VMID, to the gate during the high drive portion of
the PWM cycle and negative voltage, VSSB–VMID, during the low drive portion of the PWM cycle. Alternatively, if only positive drive
voltage is desired, short VSSB and VMID at terminals 2 and 3 of J3/J6.
Prototyping Area
If additional components are needed to evaluate the gate drive function for a particular load, there is a prototyping area just below Q1
and Q3 locations.
3
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UG169: Si8285/86-EVB User's Guide • Overview and Setup
1.3 Demonstrating Driver Functionality
Even with no load connected, the basic functionality of the Si8285 can be demonstrated:
1. Apply 5 V to VDDA. D1 will illuminate.
2. Apply 15 V between VDDB and VMID. Apply –9 V between VMID and VSSB (VMID 9 V higher than VSSB). D2 will illuminate.
3. Short VPWR to VMID using a wire between the terminals of J2. This disables desaturation detection and allows for normal
operation of the Si8285.
4. Since both sides have been powered on, RDY will output 5 V, which can be observed at J9.
5. Apply 5 V to both J10, IN+ and J11, IN–. The Si8285 will drive low and –9 V can be observed across C8.
6. Apply 5 V to J10, IN+ and 0 V to J11, IN–. The Si8285 will drive high and +15 V can be observed across C8.
7. Remove the short between VPWR and VMID at J2.
8. With no path for the DSAT current, the voltage at the DSAT pin rises and the Si8285 will drive the output low and will drive FLTb to
0 V, which can be observed at J8.
9. Once again, place the short back between VPWR and VMID at J2. Drive RSTb input to 0 V. This clears the fault and 5 V will be
observed on J8, FLTb.
Using the same method, Si8286 basic functionality can also be demonstrated:
1. Apply 5 V to VDDA. D4 will illuminate.
2. Apply 15 V between VDDB and VMID. Apply –9 V between VMID and VSSB. D5 will illuminate.
3. Short VPWR to VMID using a wire between the terminals of J5. This disables desaturation detection and allows for normal
operation of the Si8286.
4. Apply 5 V to both J14, IN+ and J15, IN–. The Si8286 will drive low and –9 V can be observed across C17.
5. Apply 5 V to J14, IN+ and 0 V to J15, IN–. The Si8286 will drive high and +15 V can be observed across C17.
6. Remove the short between VPWR and VMID at J5.
7. With no path for the DSAT current, the voltage at the DSAT pin rises and the Si8286 will drive the output low and will drive FLTb to
0 V, which can be observed at J17.
8. Once again, place the short between VPWR and VMID at J5. Drive RSTb input to 0 V. This clears the fault and 5 V will be
observed on J17, FLTb.
1.4 Quick Reference Table
Table 1.2. Test Point Descriptions
4
Test Point
Description
Referenced to
TP1
DSAT (Si8285)
VMID
TP2
DSAT (Si8286)
VMID
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UG169: Si8285/86-EVB User's Guide • Schematics
2. Schematics
SF1
SF2
8285_VPWR
J2
1
2
8285_VDDA
J1
1
2
Si8285
8285_VMID
8285_VPWR
8285_VDDA
VDDA
VPWR
VDDB
8285_VDDB
VMID
8285_VMID
8285_VDDB
8285_GNDA
GNDA
J3
1
2
3
VSSB
8285_VSSB
8285_GNDA
8285_VMID
8285_VSSB
8286_VPWR
8286_VDDA
J4
1
2
J5
Si8286
VDDA
8286_GNDA
GNDA
1
2
8286_VPWR
8286_VDDA
VPWR
VDDB
8286_VDDB
VMID
8286_VMID
8286_VMID
8286_VDDB
VSSB
8286_VSSB
8286_GNDA
J6
1
2
3
8286_VMID
8286_VSSB
SF3
SF4
Figure 2.1. Si8285/86-EVB Top Level Schematic
5
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UG169: Si8285/86-EVB User's Guide • Schematics
VPWR
VPWR
VDDA
VDDB
VDDA
VDDB
VDDB
VDDA
R2
10K
R1
10K
GNDA
VMID
D2
RED
D1
RED
VSSB
VSSB
TP1 DSAT
VDDA
U1
R6
10K
R7
10K
C1
10uF
C2
0.1uF
2
3
RST
FLT
RDY
IN+
IN -
J7
1
J8
1
J9
1
J10 1
J11 1
4
5
6
7
8
R3
GNDA
NC
VDDA
DSAT
NC
RST
FLT
RDY
ISOLATION
1
VDDB
VH
VL
CLMP
IN+
VMID
IN -
VSSB
16
100
D3
C3
390pF
15
ES1F
DSAT
VDDB
14
13
R4
10
VH
12
R5
10
VL
11
CLMP
10
VMID
9
C4
0.1uF
C5
10uF
C6
0.1uF
C7
10uF
Si8285CD- IS
VSSB
VPWR
2 4 6 8 10121416
DSAT
J12 1 3 5 7 9 111315
NI
VH
VL
CLMP
2 4 6 8 10121416
Q1
TO- 247
NI
VMID
J13 1 3 5 7 9 111315
NI
VPWR
DSAT
VH
VH
VL
VL
CLMP
VMID
C8
NI
C9
NI
CLMP
Q2
TO- 220
NI
VMID
Figure 2.2. Si8285 Circuit Schematic
6
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UG169: Si8285/86-EVB User's Guide • Schematics
VPWR
VPWR
VDDA
VDDB
VDDA
VDDB
VDDB
VDDA
R9
10K
R8
10K
GNDA
VMID
D5
RED
D4
RED
VSSB
VSSB
IN -
J14 1
TP2 DSAT
U2
J15 1
1
2
VDDA
3
4
R12
10K
R13
10K
C11
10uF
C12
0.1uF
5
6
RST
FLT
J16 1
J17 1
7
8
R10
IN+
VMID
IN VDDA
GNDA
RST
FLT
NC
NC
NC
ISOLATION
IN+
DSAT
VDDB
VDDB
VO
VSSB
VSSB
16
100
D6
ES1F
DSAT
C10
100pF
15
VMID
14
VDDB
13
12
11
R11
10
VO
10
9
C13
0.1uF
C14
10uF
C16
0.1uF
C15
10uF
VSSB
Si8286CD - IS
VPWR
2 4 6 8 10121416
DSAT
J18 1 3 5 7 9 111315
Q3
TO-247
NI
VO
2 4 6 8 10121416
VMID
J19 1 3 5 7 9 111315
VPWR
DSAT
VO
C17
NI
VMID
C18
NI
VO
Q4
TO-220
NI
VMID
Figure 2.3. Si8286 Circuit Schematic
7
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UG169: Si8285/86-EVB User's Guide • Layout
3. Layout
Figure 3.1. Si8285/86-EVB Top Silkscreen
Figure 3.2. Si8285/86-EVB Top Copper
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UG169: Si8285/86-EVB User's Guide • Layout
Figure 3.3. Si8285/86-EVB Bottom Silkscreen
Figure 3.4. Si8285/86-EVB Bottom Copper
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UG169: Si8285/86-EVB User's Guide • Bill of Materials
4. Bill of Materials
Table 4.1. Si8285/86-EVB Bill of Materials
Part Reference
Description
Manufacturer
Manufacturer Part
Number
C1, C11
CAP, 10 μF, 16 V, ±10%, X5R, 0805
Venkel
C0805X5R160-106K
C2, C6, C12
CAP, 0.1 μF, 16 V, ±10%, X7R, 0402
Venkel
C0402X7R160-104K
CAP, 390 pF, 100 V, ±20%, X7R, 0805
Venkel
C0805X7R101-391M
C4, C13, C16
CAP, 0.1 μF, 50 V, ±10%, X7R, 0603
Venkel
C0603X7R500-104K
C5, C7, C14, C15
CAP, 10 μF, 25 V, ±20%, X6S, 0805
Venkel
C0805X6S250-106M
C10
CAP, 100 pF, 200 V, ±5%, NP0 HIGH Q, 0805
Venkel
C0805HQN201-101J
D1, D2, D4, D5
LED, RED, 631 nM, 20 mA, 2 V, 54mcd, 0603
LITE-ON TECHNOLOGY
CORP
LTST-C190KRKT
Fairchild
ES1F
C3
D3, D6
DIO, FAST, 300 V, 1.0A, SMA
J1, J2, J4, J5
Terminal Block, 2 pos, 6.35 mm, 10-30AWG, 300 V, 32 A
Phoenix Contact
1714955
J3, J6
Terminal Block, 3 pos, 6.35 mm, 10-30AWG, 300V, 32 A
Phoenix Contact
1714968
J7, J8, J9, J10, J11,
J14, J15, J16, J17
Header, Single Pin, Tin Plated
Samtec
TSW-101-07-T-S
R1, R2, R6, R7, R8,
R9, R12
RES, 10 K, 1/16 W, ±1%, ThickFilm, 0603
Venkel
CR0603-16W-1002F
RES, 100 Ω, 1/10 W, ±1%, ThickFilm, 0805
Venkel
CR0805-10W-1000F
RES, 10 Ω, 1/4 W, ±1%, ThickFilm, 1206
Venkel
CR1206-4W-10R0F
3M
SJ61A6
TESTPOINT, WHITE, PTH
Kobiconn
151-201-RC
U1
IC, 4 AMP ISODRIVER, 12 V UVLO, 5KV, SOW16
Skyworks
Si8285CD-IS
U2
IC, 4 AMP ISODRIVER, 12 V UVLO, 5KV, SOW16
Skyworks
Si8286CD-IS
R13
R3, R10
R4, R5, R11
SF1, SF2, SF3, SF4
TP1, TP2
10
HDW, BUMPON CYLINDRICAL, 0.312 x 0.215, BLK
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UG169: Si8285/86-EVB User's Guide • Ordering Guide
5. Ordering Guide
Table 5.1. Si8285/86-EVB Ordering Guide
Ordering Part Number (OPN)
Si8285_86-KIT
11
Description
Si8285/Si8286 Isolated gate driver evaluation board kit.
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