TS1001
THE ONLY 0.8V/0.6µA RAIL-TO-RAIL OP AMP
FEATURES
Single 0.65V to 2.5V Operation
Supply current: 0.6μA (typ)
Offset voltage: 0.5mV (typ)
Low TCVOS: 20µV/°C (typ)
AVOL Driving 100kΩ Load: 90dB (min)
Unity Gain Stable
Rail-to-rail Input and Output
No Output Phase Reversal
5-pin SC70 Package
APPLICATIONS
Battery/Solar-Powered Instrumentation
Portable Gas Monitors
Low-voltage Signal Processing
Nanopower Active Filters
Wireless Remote Sensors
Battery-powered Industrial Sensors
Active RFID Readers
Powerline or Battery Current Sensing
Handheld/Portable POS Terminals
DESCRIPTION
The TS1001 is the industry’s first sub-1µA supply
current, precision CMOS operational amplifier rated to
operate at a nominal supply voltage of 0.8V. Optimized
for ultra-long-life battery-powered applications, the
TS1001 is an operational amplifier in the “NanoWatt
Analog™” high-performance analog integrated circuits
portfolio. The TS1001 exhibits a typical input offset
voltage of 0.5mV, a typical input bias current of 25pA,
and rail-to-rail input and output stages. The TS1001
can operate from single-supply voltages from 0.65V to
2.5V.
The TS1001’s combined features make it an excellent
choice in applications where very low supply current
and low operating supply voltage translate into very
long equipment operating time. Applications include:
nanopower active filters, wireless remote sensors,
battery and powerline current sensors, portable gas
monitors, and handheld/portable POS terminals.
The TS1001 is fully specified at VDD = 0.8V and over
the industrial temperature range (−40°C to +85°C) and
is available in a PCB-space saving 5-lead SC70
surface-mount package.
TYPICAL APPLICATION CIRCUIT
A NanoWatt 2-Pole Sallen Key Low Pass Filter
30%
Supply Current Distribution
VDD = 0.8V
Percent of Units - %
25%
20%
15%
10%
5%
0%
0.53
0.58
0.63
0.68
Supply Current - µA
0.73
Page 1
© 2014 Silicon Laboratories, Inc. All rights reserved.
TS1001
ABSOLUTE MAXIMUM RATINGS
Total Supply Voltage (VDD to VSS) .......................... +2.75 V
Voltage Inputs (IN+, IN-) ........... (VSS - 0.3V) to (VDD + 0.3V)
Differential Input Voltage........................................ ±2.75 V
Input Current (IN+, IN-) ............................................ 20 mA
Output Short-Circuit Duration to GND ................... Indefinite
Continuous Power Dissipation (TA = +70°C)
5-Pin SC70 (Derate 3.87mW/°C above +70°C) .. 310 mW
Operating Temperature Range ................... -40°C to +85°C
Junction Temperature ............................................ +150°C
Storage Temperature Range .................... -65°C to +150°C
Lead Temperature (soldering, 10s) ........................... +300°
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
TAPE & REEL
ORDER NUMBER
TS1001IJ5
TS1001IJ5T
PART
PACKAGE
MARKING QUANTITY
TAE
----3000
Lead-free Program: Silicon Labs supplies only lead-free packaging.
Consult Silicon Labs for products specified with wider operating temperature ranges.
Page 2
TS1001 Rev. 1.0
TS1001
ELECTRICAL CHARACTERISTICS
VDD = +0.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C. See Note 1
Parameters
Supply Voltage Range
Symbol
VDD-VSS
Conditions
Supply Current
ISY
RL = Open circuit
Input Offset Voltage
VOS
VIN = VSS or VDD
Input Offset Voltage Drift
TCVOS
Input Bias Current
IIN+, IIN-
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage High
Output Voltage Low
IOS
IVR
CMRR
PSRR
VOH
VOL
ISC+
Short-circuit Current
ISCOpen-loop Voltage Gain
AVOL
Gain-Bandwidth Product
GBWP
Phase Margin
Slew Rate
Full-power Bandwidth
Input Voltage Noise Density
Input Current Noise Density
φM
SR
FPBW
en
in
TA = 25°C
-40°C ≤ T A ≤ 85°C
TA = 25°C
-40°C ≤ T A ≤ 85°C
TA = 25°C
VIN+, VIN- = (VDD - VSS)/2
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as IIN+ - IINVIN+, VIN- = (VDD - VSS)/2
-40°C ≤ T A ≤ 85°C
Guaranteed by Input Offset Voltage Test
0V ≤ VIN(CM) ≤ 0.4V
0.65V ≤ (VDD - VSS) ≤ 2.5V
TA = 25°C
Specified as VDD - VOUT,
RL = 100kΩ to VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 10kΩ to VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 100kΩ to VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 10kΩ to VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
VOUT = VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
VOUT = VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
VSS+50mV ≤ VOUT ≤ VDD-50mV
-40°C ≤ T A ≤ 85°C
RL = 100kΩ to VSS, CL = 20pF
Unity-gain Crossover,
RL = 100kΩ to VSS, CL = 20pF
RL = 100kΩ to VSS, AVCL = +1V/V
FPBW = SR/(π • VOUT,PP); VOUT,PP = 0.7VPP
f = 1kHz
f = 1kHz
Min
0.65
Typ
0.8
0.6
0.5
20
0.025
Max
2.5
0.8
1
3
6
Units
V
µA
mV
µV/°C
nA
20
0.01
VSS
50
50
74
74
1.2
10
0.4
5
0.5
0.3
4.5
3
90
85
nA
2
VDD
V
dB
dB
2
2.5
16
20
0.6
1
7
10
mV
mV
1.5
mA
11
104
dB
4
kHz
70
degrees
1.5
680
0.6
10
V/ms
Hz
µV/√Hz
pA/√Hz
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by
device characterization, not production tested.
TS1001 Rev. 1.0
Page 3
TS1001
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Voltage
Supply Current vs Input Common-Mode Voltage
0.65
0.8
TA = +25°C
0.7
SUPPLY CURENT - µA
SUPPLY CURENT - µA
+85°C
+25°C
0.6
0.5
-40°C
0.4
0.3
0.65
0.8
1.2
0
0.4
0.2
0.6
0.8
SUPPLY VOLTAGE - Volt
INPUT COMMON-MODE VOLTAGE - Volt
Supply Current vs Input Common-Mode Voltage
Input Offset Voltage vs Supply Voltage
0.65
INPUT OFFSET VOLTAGE - mV
TA = +25°C
SUPPLY CURENT - µA
0.55
0.5
2.5
0.65
0.6
0.55
0.5
0
0.5
1
1.5
2
TA = +25°C
VINCM = VDD
0.6
0.55
VINCM = 0V
0.55
0.5
2.5
1
0.5
1.5
2.5
2
INPUT COMMON-MODE VOLTAGE - Volt
SUPPLY VOLTAGE - Volt
Input Offset Voltage vs Input Common-Mode Voltage
Input Offset Voltage vs Input Common-Mode Voltage
1
1
VDD =0.8V
TA = +25°C
INPUT OFFSET VOLTAGE - mV
INPUT OFFSET VOLTAGE - mV
0.6
0.5
0
-0.5
-1
0
0.2
0.4
0.6
0.8
INPUT COMMON-MODE VOLTAGE - Volt
Page 4
VDD = 2.5V
TA = +25°C
0.5
0
-0.5
-1
0
0.5
1
1.5
2
2.5
INPUT COMMON-MODE VOLTAGE - Volt
TS1001 Rev. 1.0
TS1001
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
250
VDD =0.8V
TA = +25°C
75
INPUT BIAS CURRENT - pA
INPUT BIAS CURRENT - pA
100
50
25
0
-25
VDD = 2.5V
TA = +25°C
200
150
100
50
0
-50
-50
0
0.2
0.4
0.6
0
0.8
1
0.5
1.5
2
2.5
INPUT COMMON-MODE VOLTAGE - Volt
Output Voltage High (VOH) vs Temperature, RLOAD =100kΩ
Output Voltage Low (VOL) vs Temperature, RLOAD =100kΩ
4.5
4
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
INPUT COMMON-MODE VOLTAGE - Volt
RL = 100kΩ
VDD = 2.5V
3.5
3
2.5
2
VDD = 0.8V
1.5
1
0.5
0
+25
-40
+85
1.8
1.6
VDD = 2.5V
1.4
1.2
1
0.8
0.6
VDD = 0.8V
0.4
0.2
0
RL = 100kΩ
-40
35
RL = 10kΩ
VDD = 2.5V
20
15
VDD = 0.8V
10
5
0
-40
+25
TEMPERATURE - °C
TS1001 Rev. 1.0
Output Voltage Low (VOL) vs Temperature, RLOAD =10kΩ
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
Output Voltage High (VOH) vs Temperature, RLOAD =10kΩ
25
+85
TEMPERATURE - °C
TEMPERATURE - °C
30
+25
+85
20
VDD = 2.5V
16
12
8
VDD = 0.8V
4
RL = 10kΩ
0
-40
+25
+85
TEMPERATURE - °C
Page 5
TS1001
Output Short Circuit Current, ISC+ vs Temperature
25
OUTPUT SHORT-CIRCUIT CURRENT - mA
OUTPUT SHORT-CIRCUIT CURRENT - mA
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT = 0V
20
VDD = 2.5V
15
10
5
VDD = 0.8V
0
+25
-40
+85
VDD = 2.5V
50
40
30
20
VDD = 0.8V
10
0
-40
+25
+85
TEMPERATURE - °C
TEMPERATURE - °C
0.1Hz to 10Hz Output Voltage Noise
Gain and Phase vs. Frequency
60
Output Short Circuit Current, ISC- vs Temperature
70
VOUT = VDD
60
150
PHASE
50
GAIN - dB
GAIN
20
0
-20
-50
VDD = 0.8V
TA = +25°C
RL = 100kΩ
CL = 20pF
AVCL = 1000 V/V
10
100
4kHz
1k
10k
-150
VOUT(N) - 100µV/DIV
40
PHASE - Degrees
70°
130µVPP
-250
100k
1 Second/DIV
Small-Signal Transient Response
VDD = 2.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
Large-Signal Transient Response
VDD = 2.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
OUTPUT
OUTPUT
INPUT
INPUT
FREQUENCY - Hz
200µs/DIV
Page 6
2ms/DIV
TS1001 Rev. 1.0
TS1001
PIN FUNCTIONS
Pin
1
Label
OUT
2
VSS
3
4
+IN
-IN
5
VDD
Function
Amplifier Output.
Negative Supply or Analog GND. If applying a negative voltage to
this pin, connect a 0.1µF capacitor from this pin to analog GND.
Amplifier Non-inverting Input.
Amplifier Inverting Input.
Positive Supply Connection. Connect a 0.1µF bypass capacitor
from this pin to analog GND.
THEORY OF OPERATION
The TS1001 is fully functional for an input signal
from the negative supply (VSS or GND) to the
positive supply (VDD). The input stage consists of two
differential amplifiers, a p-channel CMOS stage and
an n-channel CMOS stage that are active over
different ranges of the input common mode voltage.
The p-channel input pair is active for input common
mode voltages, VINCM, between the negative supply
to approximately 0.4V below the positive supply. As
the common-mode input voltage moves closer
towards VDD, an internal current mirror activates the
n-channel input pair differential pair. The p-channel
input pair becomes inactive for the balance of the
input common mode voltage range up to the positive
supply. Because both input stages have their own
offset voltage (VOS) characteristic, the offset voltage
of the TS1001 is a function of the applied input
common-mode voltage, VINCM. The VOS has a
crossover point at ~0.4V from VDD (Refer to the VOS
vs. VCM curve in the Typical Operating
Characteristics section). Caution should be taken in
applications where the input signal amplitude is
comparable to the TS1001’s VOS value and/or the
design requires high accuracy. In these situations, it
is necessary for the input signal to avoid the
crossover point. In addition, amplifier parameters
such as PSRR and CMRR which involve the input
offset voltage will also be affected by changes in the
input common-mode voltage across the differential
pair transition region.
The second stage is a folded-cascode transistor
arrangement that converts the input stage
differential signals into a single-ended output. A
complementary drive generator supplies current to
the output transistors that swing rail to rail.
The TS1001 output stages voltage swings within
1.2mV from the rails at 0.8V supply when driving an
output load of 100kΩ - which provides the maximum
possible dynamic range at the output. This is
particularly important when operating on low supply
voltages. When driving a stiffer 10kΩ load, the
TS1001 swings within 10mV of VDD and within 5mV
of VSS (or GND).
APPLICATIONS INFORMATION
Portable Gas Detection Sensor Amplifier
Gas sensors are used in many different industrial
and medical applications. Gas sensors generate a
current that is proportional to the percentage of a
particular gas concentration sensed in an air
sample. This output current flows through a load
resistor and the resultant voltage drop is amplified.
Depending on the sensed gas and sensitivity of the
sensor, the output current can be in the range of
tens of microamperes to a few milliamperes. Gas
sensor datasheets often specify a recommended
load resistor value or a range of load resistors from
which to choose.
TS1001 Rev. 1.0
There are two main applications for oxygen sensors
– applications which sense oxygen when it is
abundantly present (that is, in air or near an oxygen
tank) and those which detect traces of oxygen in
parts-per-million concentration. In medical
applications, oxygen sensors are used when air
quality or oxygen delivered to a patient needs to be
monitored. In fresh air, the concentration of oxygen
is 20.9% and air samples containing less than 18%
oxygen are considered dangerous. In industrial
applications, oxygen sensors are used to detect the
absence of oxygen; for example, vacuum-packaging
of food products is one example.
Page 7
TS1001
The circuit in Figure 1 illustrates a typical
implementation used to amplify the output of an
oxygen detector. The TS1001 makes an
excellent choice for this application as it only draws
often required. As shown in Figure 2, the simplest
way to achieve this objective is to use an RC filter at
the noninverting terminal of the TS1001.
If additional attenuation is needed, a two-pole
Sallen-Key filter can be used to provide the
additional attenuation as shown in Figure 3.
Figure 3: A Nanopower 2-Pole Sallen-Key Low-Pass Filter.
Figure 1: A Nanopower, Precision Oxygen Gas Sensor
Amplifier.
0.6µA of supply current and operates on supply
voltages down to 0.65V. With the components
shown in the figure, the circuit consumes less than
0.7 μA of supply current ensuring that small formfactor single- or button-cell batteries (exhibiting low
mAh charge ratings) could last beyond the operating
life of the oxygen sensor. The precision
specifications of the TS1001, such as its low offset
voltage, low TCVOS, low input bias current, high
CMRR, and high PSRR are other factors which
make the TS1001 an excellent choice for this
application. Since oxygen sensors typically exhibit
an operating life of one to two years, an oxygen
sensor amplifier built around a TS1001 can operate
from a conventionally-available single 1.5-V alkaline
AA battery for over 290 years! At such low power
consumption from a single cell, the oxygen sensor
could be replaced over 150 times before the battery
requires replacing!
NanoWatt, Buffered Single-pole Low-Pass Filters
For best results, the filter’s cutoff frequency should
be 8 to 10 times lower than the TS1001’s crossover
frequency. Additional operational amplifier phase
margin shift can be avoided if the amplifier
bandwidth-to-signal bandwidth ratio is greater than
8.
The design equations for the 2-pole Sallen-Key lowpass filter are given below with component values
selected to set a 400Hz low-pass filter cutoff
frequency:
R1 = R2 = R = 1MΩ
C1 = C2 = C = 400pF
Q = Filter Peaking Factor = 1
f–3dB = 1/(2 x π x RC) = 400 Hz
R3 = R4/(2-1/Q); with Q = 1, R3 = R4.
A Single +1.5 V Supply, Two Op Amp
Instrumentation Amplifier
The TS1001’s ultra-low supply current and ultra-low
voltage operation make it ideal for battery-powered
applications such as the instrumentation amplifier
shown in Figure 4.
When receiving low-level signals, limiting the
bandwidth of the incoming signals into the system is
Figure 4: A Two Op Amp Instrumentation Amplifier.
Figure 2: A Simple, Single-pole Active Low-Pass Filter.
Page 8
The circuit utilizes the classic two op amp
instrumentation amplifier topology with four resistors
TS1001 Rev. 1.0
TS1001
to set the gain. The equation is simply that of a
noninverting amplifier as shown in the figure. The
two resistors labeled R1 should be closely matched
to each other as well as both resistors labeled R2 to
ensure acceptable common-mode rejection
performance.
Resistor networks ensure the closest matching as
well as matched drifts for good temperature stability.
Capacitor C1 is included to limit the bandwidth and,
therefore, the noise in sensitive applications. The
value of this capacitor should be adjusted depending
on the desired closed-loop bandwidth of the
instrumentation amplifier. The RC combination
creates a pole at a frequency equal to 1/(2 π ×
R1C1). If the AC-CMRR is critical, then a matched
capacitor to C1 should be included across the
second resistor labeled R1.
Because the TS1001 accepts rail-to-rail inputs, the
input common mode range includes both ground
and the positive supply of 1.5V. Furthermore, the
rail-to-rail output range ensures the widest signal
range possible and maximizes the dynamic range of
the system. Also, with its low supply current of
0.6μA, this circuit consumes a quiescent current of
only ~1.3μA, yet it still exhibits a 1-kHz bandwidth at
a circuit gain of 2.
Driving Capacitive Loads
While the TS1001’s internal gain-bandwidth product
is 4kHz, it is capable of driving capacitive loads up to
50pF in voltage follower configurations without any
additional components. In many applications,
however, an operational amplifier is required to drive
much larger capacitive loads. The amplifier’s output
impedance and a large capacitive load create
additional phase lag that further reduces the
amplifier’s phase margin. If enough phase delay is
introduced, the amplifier’s phase margin is reduced.
The effect is quite evident when the transient
response is observed as there will appear noticeable
peaking/ringing in the output transient response.
If the TS1001 is used in an application that requires
driving larger capacitive loads, an isolation resistor
between the output and the capacitive load should
be used as illustrated in Figure 5.
transient response obtained with a CLOAD = 500pF
and an RISO = 50kΩ. Note that as CLOAD is increased
a smaller RISO is needed for optimal transient
response.
Figure 5: Using an External Resistor to Isolate a CLOAD from
the TS1001’s Output
External Capacitive
Load, CLOAD
0-50pF
100pF
500pF
1nF
5nF
10nF
External Output
Isolation Resistor, RISO
Not Required
120kΩ
50kΩ
33kΩ
18kΩ
13kΩ
In the event that an external RLOAD in parallel with
CLOAD appears in the application, the use of an RISO
results in gain accuracy loss because the external
series RISO forms a voltage-divider with the external
load resistor RLOAD.
VIN
VOUT
Figure 6: TS1001 Transient Response for RISO = 50kΩ and
CLOAD = 500pF.
Table 1 illustrates a range of RISO values as a
function of the external CLOAD on the output of the
TS1001. The power supply voltage used on the
TS1001 at which these resistor values were
determined empirically was 1.8V. The oscilloscope
capture shown in Figure 6 illustrates a typical
TS1001 Rev. 1.0
Page 9
TS1001
Configuring the TS1001 as Nanowatt Analog
Comparator
Although optimized for use as an operational
amplifier, the TS1001 can also be used as a rail-torail I/O comparator as illustrated in Figure 7.
of an analog comparator using the TS1001 should
also use as little current as practical. The first step in
the design, therefore, was to set the feedback
resistor R3:
R3 = 10MΩ
Calculating a value for R1 is given by the following
expression:
R1 = R3 x (VHYB/VDD)
Substituting VHYB = 100mV, VDD = 1.5V, and R3 =
10MΩ into the equation above yields:
R1 = 667kΩ
Figure 7: A NanoWatt Analog Comparator with UserProgrammable Hysteresis.
External hysteresis can be employed to minimize the
risk of output oscillation. The positive feedback
circuit causes the input threshold to change when
the output voltage changes state. The diagram in
Figure 8 illustrates the TS1001’s analog comparator
The following expression was then used to calculate
a value for R2:
R2 = 1/[VHI/(VREF x R1) – (1/R1) – (1/R3)]
Substituting VHI = 1V, VREF = 0.75V, R1 = 667kΩ,
and R3 = 10MΩ into the above expression yields:
R2 = 2.5MΩ
Printed Circuit Board Layout Considerations
Figure 8: Analog Comparator Hysteresis Band and Output
Switching Points.
hysteresis band and output transfer characteristic.
The design of an analog comparator using the
TS1001 is straightforward. In this application, a 1.5V power supply (VDD) was used and the resistor
divider network formed by RD1 and RD2 generated
a convenient reference voltage (VREF) for the circuit
at ½ the supply voltage, or 0.75V, while keeping the
current drawn by this resistor divider low. Capacitor
C1 is used to filter any extraneous noise that could
couple into the TS1001’s inverting input.
In this application, the desired hysteresis band was
set to 100mV (VHYB) with a desired high trip-point
(VHI) set at 1V and a desired low trip-point (VLO) set
at 0.9V.
Even though the TS1001 operates from a single
0.65V to 2.5V power supply and consumes very little
supply current, it is always good engineering
practice to bypass the power supplies with a 0.1μF
ceramic capacitor placed in close proximity to the
VDD and VSS (or GND) pins.
Good pcb layout techniques and analog ground
plane management improve the performance of any
analog circuit by decreasing the amount of stray
capacitance that could be introduced at the op amp's
inputs and outputs. Excess stray capacitance can
easily couple noise into the input leads of the op
amp and excess stray capacitance at the output will
add to any external capacitive load. Therefore, PC
board trace lengths and external component leads
should be kept a short as practical to any of the
TS1001’s package pins. Second, it is also good
engineering practice to route/remove any analog
ground plane from the inputs and the output pins of
the TS1001.
Since the TS1001 is a very low supply current
amplifier (0.6µA, typical), it is desired that the design
Page 10
TS1001 Rev. 1.0
TS1001
PACKAGE OUTLINE DRAWING
5-Pin SC70 Package Outline Drawing
(N.B., Drawings are not to scale)
0.65 TYP.
0.15 - 0.30
5
2
4
1.80 - 2.40
1
3
2
1.30 TYP.
1.80 - 2.20
1
8º - 12º ALL
SIDE
0.800 – 0.925
LEAD FRAME THICKNESS
0.10 - 0.18
0.40 – 0.55
0.15
TYP.
1.00
MAX
GAUGE PLANE
0.00 - 0.10
1.15 - 1.35
0.10 MAX
0º - 8º
0.26 - 0.46
0.275 - 0.575
NOTES:
1
DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
2
DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS.
3.
DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM.
4
ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA
5.
CONTROLLING DIMENSIONS IN MILIMITERS.
6.
ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA
7.
LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC
Patent Notice
Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size,
analog-intensive mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class
engineering team.
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from the
use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features or
parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty,
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Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers
using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific
device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories
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