TS1003
THE ONLY 0.8V TO 5.5V, 0.6µA RAIL-TO-RAIL SINGLE OP AMP
FEATURES
Single 0.8V to 5.5V Operation
Supply current: 0.6μA (typ)
Input Bias Current: 2pA (typ)
Low TCVOS: 9µV/°C (typ)
AVOL Driving 100kΩ Load: 90dB (min)
Gain-Bandwidth Product: 4kHz
Unity Gain Stable
Rail-to-rail Input and Output
No Output Phase Reversal
5-pin SC70 or 5-pin SOT23 Packaging
APPLICATIONS
Battery/Solar-Powered Instrumentation
Portable Gas Monitors
Low-voltage Signal Processing
Micropower Active Filters
Wireless Remote Sensors
Battery-powered Industrial Sensors
Active RFID Readers
Powerline or Battery Current Sensing
Handheld/Portable POS Terminals
DESCRIPTION
The TS1003 is the industry’s first sub-1µA supply
current, precision CMOS operational amplifier fully
specified to operate over a supply voltage range from
0.8V to 5.5V. Fully specified at 1.8V, the TS1003 is
optimized for ultra-long-life battery powered
applications. The TS1003 is the fourth operational
amplifier in the “NanoWatt Analog™” highperformance analog integrated circuits portfolio. The
TS1003 exhibits a typical input bias current of 2pA,
and has rail-to-rail input and output stages.
The TS1003’s combined features make it an excellent
choice in applications where very low supply current
and low operating supply voltage translate into very
long equipment operating time. Applications include:
micropower active filters, wireless remote sensors,
battery and powerline current sensors, portable gas
monitors, and handheld/portable POS terminals.
The TS1003 is fully specified over the industrial
temperature range (−40°C to +85°C) and is available
in either a PCB-space saving 5-lead SC70 or a 5-lead
SOT23 packaging.
TYPICAL APPLICATION CIRCUIT
A MicroWatt 2-Pole Sallen Key Low Pass Filter
Supply Current Distribution
35%
Percent of Units - %
30%
VDD = 1.8V
25%
20%
15%
10%
5%
0%
0.48
0.53
0.58
0.63
Supply Current - µA
Page 1
© 2014 Silicon Laboratories, Inc. All rights reserved.
TS1003
ABSOLUTE MAXIMUM RATINGS
Total Supply Voltage (VDD to VSS) ............................. +6.0V
Voltage Inputs (IN+, IN-) ........... (VSS - 0.3V) to (VDD + 0.3V)
Differential Input Voltage.......................................... ±6.0 V
Input Current (IN+, IN-) ............................................ 20 mA
Output Short-Circuit Duration to GND ................... Indefinite
Continuous Power Dissipation (TA = +70°C)
5-Pin SC70 (Derate 3.87mW/°C above +70°C) .... 310 mW
5-Pin SOT23(Derate 3.87mW/°C above +70°C)... 312 mW
Operating Temperature Range ................... -40°C to +85°C
Junction Temperature ............................................ +150°C
Storage Temperature Range .................... -65°C to +150°C
Lead Temperature (soldering, 10s) ........................... +300°
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
TAPE & REEL
ORDER NUMBER
TS1003IJ5
TS1003IJ5T
PART
PACKAGE
MARKING QUANTITY
TAH
TAPE & REEL
ORDER NUMBER
---
TS1003IG5
3000
TS1003IG5T
PART
MARKING
TAEA
PACKAGE
QUANTITY
--3000
Lead-free Program: Silicon Labs supplies only lead-free packaging.
Consult Silicon Labs for products specified with wider operating temperature ranges.
Page 2
TS1003 Rev. 1.0
TS1003
ELECTRICAL CHARACTERISTICS
VDD = +1.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C. See Note 1
Parameters
Supply Voltage Range
Symbol
VDD-VSS
Conditions
Supply Current
ISY
RL = Open circuit
Input Offset Voltage
VOS
VIN = VSS or VDD
Input Offset Voltage Drift
TCVOS
Input Bias Current
IIN+, IIN-
Input Offset Current
IOS
Input Voltage Range
IVR
Common-Mode Rejection Ratio
CMRR
Power Supply Rejection Ratio
PSRR
Output Voltage High
Output Voltage Low
Short-circuit Current
VOH
VOL
ISC+
ISC-
Open-loop Voltage Gain
AVOL
Gain-Bandwidth Product
GBWP
Phase Margin
Slew Rate
Full-power Bandwidth
Input Voltage Noise Density
Input Current Noise Density
φM
SR
FPBW
en
in
TA = 25°C
-40°C ≤ T A ≤ 85°C
TA = 25°C
-40°C ≤ T A ≤ 85°C
TA = 25°C
VIN+, VIN- = (VDD - VSS)/2
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as IIN+ - IINVIN+, VIN- = (VDD - VSS)/2
-40°C ≤ T A ≤ 85°C
Guaranteed by Input Offset Voltage Test
TA = 25°C
Vdd=5.5V; 0V ≤ VIN(CM) ≤ 5.0V
-40°C ≤ T A ≤ 85°C
TA = 25°C
0.8V ≤ (VDD - VSS) ≤ 5.5V
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 100kΩ to VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 10kΩ to VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 100kΩ to VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 10kΩ to VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
VOUT = VSS
-40°C ≤ T A ≤ 85°C
TA = 25°C
VOUT = VDD
-40°C ≤ T A ≤ 85°C
TA = 25°C
VSS+50mV ≤ VOUT ≤ VDD-50mV
-40°C ≤ T A ≤ 85°C
RL = 100kΩ to VSS, CL = 20pF
Unity-gain Crossover,
RL = 100kΩ to VSS, CL = 20pF
RL = 100kΩ to VSS, AVCL = +1V/V
FPBW = SR/(π • VOUT,PP); VOUT,PP = 0.7VPP
f = 1kHz
f = 1kHz
Min
0.8
Typ
0.6
0.8
9
2
Max
5.5
0.8
1
3
5
Units
V
µA
mV
µV/°C
pA
100
2
VSS
70
68
70
67
90
pA
50
VDD
V
dB
90
dB
3.7
6
30
mV
60
1.5
6
mV
15
4
30
2
mA
15
7
91
84
110
dB
4
kHz
70
degrees
1.5
680
0.6
10
V/ms
Hz
µV/√Hz
pA/√Hz
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by
device characterization, not production tested.
TS1003 Rev. 1.0
Page 3
TS1003
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Input Common-Mode Voltage
0.65
0.7
0.63
SUPPLY CURENT - µA
SUPPLY CURENT - µA
Supply Current vs Supply Voltage
0.75
+85°C
0.65
+25°C
0.6
-40°C
0.55
0.5
0.59
0.57
1.6
2.4
3.1
3.9
4.7
0
5.5
0.6
1.2
1.8
SUPPLY VOLTAGE - Volt
INPUT COMMON-MODE VOLTAGE - Volt
Supply Current vs Input Common-Mode Voltage
Input Offset Voltage vs Supply Voltage
0.625
0.6
VDD=5.5V
TA = +25°C
INPUT OFFSET VOLTAGE - mV
SUPPLY CURENT - µA
0.61
0.55
0.8
0.605
0.585
0.565
0.545
0.525
0.4
VINCM = VDD
0.2
VINCM = 0V
0
-0.2
-0.4
TA = +25°C
-0.6
0
1.1
2.2
3.3
4.4
5.5
0.8
1.6
2.4
3.1
3.9
4.7
5.5
INPUT COMMON-MODE VOLTAGE - Volt
SUPPLY VOLTAGE - Volt
Input Offset Voltage vs Input Common-Mode Voltage
Input Offset Voltage vs Input Common-Mode Voltage
0.6
0.6
VDD =1.8V
TA = +25°C
INPUT OFFSET VOLTAGE - mV
INPUT OFFSET VOLTAGE - mV
VDD=1.8V
TA = +25°C
0.3
0
-0.3
-0.6
0.3
0
-0.3
-0.6
0
0.3
0.6
0.9
1.2
1.5
1.8
INPUT COMMON-MODE VOLTAGE - Volt
Page 4
VDD = 5.5V
TA = +25°C
0
0.8
1.6
2.3
3.1
3.9
4.7 5.5
INPUT COMMON-MODE VOLTAGE - Volt
TS1003 Rev. 1.0
TS1003
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
30
VDD =1.8V
4
2
INPUT BIAS CURRENT - pA
INPUT BIAS CURRENT - pA
6
TA = +25°C
0
-2
-4
-6
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
TA = +85°C
VDD = 5.5V
20
10
TA = +25°C
0
-10
-20
TA = +85°C
-30
0.6
0
1.2
0
1.8
1.1
2.2
3.3
4.5
5.5
INPUT COMMON-MODE VOLTAGE - Volt
Output Voltage High (VOH) vs Temperature, RLOAD =100kΩ
Output Voltage Low (VOL) vs Temperature, RLOAD =100kΩ
12
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
INPUT COMMON-MODE VOLTAGE - Volt
RL = 100kΩ
10
VDD = 5.5V
8
6
VDD = 1.8V
4
2
-40
+25
5
RL = 100kΩ
VDD = 5.5V
4
3
2
VDD = 1.8V
0
+85
120
RL = 10kΩ
100
VDD = 5.5V
80
60
VDD = 1.8V
20
+25
TEMPERATURE - °C
TS1003 Rev. 1.0
Output Voltage Low (VOL) vs Temperature, RLOAD =10kΩ
OUTPUT SATURATION VOLTAGE - mV
OUTPUT SATURATION VOLTAGE - mV
Output Voltage High (VOH) vs Temperature, RLOAD =10kΩ
-40
+85
TEMPERATURE - °C
TEMPERATURE - °C
40
+25
-40
+85
50
RL = 10kΩ
VDD = 5.5V
40
30
20
VDD = 1.8V
10
-40
+25
+85
TEMPERATURE - °C
Page 5
TS1003
TYPICAL PERFORMANCE CHARACTERISTICS
6.5
Output Short Circuit Current, ISC- vs Temperature
OUTPUT SHORT-CIRCUIT CURRENT - mA
OUTPUT SHORT-CIRCUIT CURRENT - mA
Output Short Circuit Current, ISC+ vs Temperature
VOUT = 0V
5.2
VDD = 5.5V
3.8
VDD = 1.8V
2.5
+25
-40
+85
26
VOUT = VDD
21.5
VDD = 5.5V
17
VDD = 1.8V
12.5
8
-40
+25
+85
TEMPERATURE - °C
TEMPERATURE - °C
0.1Hz to 10Hz Output Voltage Noise
Gain and Phase vs. Frequency
60
PHASE
GAIN
60
30
20
VDD = 1.8V
TA = +25°C
RL = 100kΩ
CL = 20pF
AVCL = 1000V/V
10
0
-10
10
100
35
4kHz
1k
VOUT(N) - 100µV/DIV
70°
40
GAIN - dB
85
PHASE - Degrees
50
100µVPP
10
10k
100k
1 Second/DIV
FREQUENCY - Hz
Large-Signal Transient Response
VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
OUTPUT
OUTPUT
INPUT
INPUT
Small-Signal Transient Response
VDD = 5.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
200µs/DIV
Page 6
2ms/DIV
TS1003 Rev. 1.0
TS1003
PIN FUNCTIONS
Pin
1
Label
OUT
2
VSS
3
4
+IN
-IN
5
VDD
Function
Amplifier Output.
Negative Supply or Analog GND. If applying a negative voltage to
this pin, connect a 0.1µF capacitor from this pin to analog GND.
Amplifier Non-inverting Input.
Amplifier Inverting Input.
Positive Supply Connection. Connect a 0.1µF bypass capacitor
from this pin to analog GND.
THEORY OF OPERATION
The TS1003 is fully functional for an input signal
from the negative supply (VSS or GND) to the
positive supply (VDD). The input stage consists of two
differential amplifiers, a p-channel CMOS stage and
an n-channel CMOS stage that are active over
different ranges of the input common mode voltage.
The p-channel input pair is active for input common
mode voltages, VINCM, between the negative supply
to approximately 0.4V below the positive supply. As
the common-mode input voltage moves closer
towards VDD, an internal current mirror activates the
n-channel input pair differential pair. The p-channel
input pair becomes inactive for the balance of the
input common mode voltage range up to the positive
supply. Because both input stages have their own
offset voltage (VOS) characteristic, the offset voltage
of the TS1003 is a function of the applied input
common-mode voltage, VINCM. The VOS has a
crossover point at ~0.4V from VDD (Refer to the VOS
vs. VCM curve in the Typical Operating
Characteristics section). Caution should be taken in
applications where the input signal amplitude is
comparable to the TS1003’s VOS value and/or the
APPLICATIONS INFORMATION
Portable Gas Detection Sensor Amplifier
Gas sensors are used in many different industrial
and medical applications. Gas sensors generate a
current that is proportional to the percentage of a
particular gas concentration sensed in an air
sample. This output current flows through a load
resistor and the resultant voltage drop is amplified.
Depending on the sensed gas and sensitivity of the
sensor, the output current can be in the range of
tens of microamperes to a few milliamperes. Gas
sensor datasheets often specify a recommended
TS1003 Rev. 1.0
design requires high accuracy. In these situations, it
is necessary for the input signal to avoid the
crossover point. In addition, amplifier parameters
such as PSRR and CMRR which involve the input
offset voltage will also be affected by changes in the
input common-mode voltage across the differential
pair transition region.
The second stage is a folded-cascode transistor
arrangement that converts the input stage
differential signals into a single-ended output. A
complementary drive generator supplies current to
the output transistors that swing rail to rail.
The TS1003 output stages voltage swings within
3.7mV from the rails at 1.8V supply when driving an
output load of 100kΩ - which provides the maximum
possible dynamic range at the output. This is
particularly important when operating on low supply
voltages. When driving a stiffer 10kΩ load, the
TS1003 swings within 30mV of VDD and within 13mV
of VSS or GND.
load resistor value or a range of load resistors from
which to choose.
There are two main applications for oxygen sensors
– applications which sense oxygen when it is
abundantly present (that is, in air or near an oxygen
tank) and those which detect traces of oxygen in
parts-per-million
concentration.
In
medical
applications, oxygen sensors are used when air
quality or oxygen delivered to a patient needs to be
monitored. In fresh air, the concentration of oxygen
is 20.9% and air samples containing less than 18%
oxygen are considered dangerous. In industrial
applications, oxygen sensors are used to detect the
Page 7
TS1003
absence of oxygen; for example, vacuum-packaging
of food products is one example.
way to achieve this objective is to use an RC filter at
the noninverting terminal of the TS1003.
The circuit in Figure 1 illustrates a typical
implementation used to amplify the output of an
oxygen detector. The TS1003 makes an excellent
choice for this application as it only draws 0.6µA of
supply current and operates on supply voltages
If additional attenuation is needed, a two-pole
Sallen-Key filter can be used to provide the
additional attenuation as shown in Figure 3.
Figure 3: A Micropower 2-Pole Sallen-Key Low-Pass Filter.
Figure 1: A Micropower, Precision Oxygen Gas Sensor
Amplifier.
down to 0.8V. With the components shown in the
figure, the circuit consumes less than 0.7 μA of
supply current ensuring that small form-factor singleor button-cell batteries (exhibiting low mAh charge
ratings) could last beyond the operating life of the
oxygen sensor. The precision specifications of the
TS1003, such as its low offset voltage, low TCVOS,
low input bias current, high CMRR, and high PSRR
are other factors which make the TS1003 an
excellent choice for this application. Since oxygen
sensors typically exhibit an operating life of one to
two years, an oxygen sensor amplifier built around a
TS1003 can operate from a conventionally-available
single 1.5-V alkaline AA battery for over 290 years!
At such low power consumption from a single cell,
the oxygen sensor could be replaced over 150 times
before the battery requires replacing!
MicroWatt, Buffered Single-pole Low-Pass Filters
For best results, the filter’s cutoff frequency should
be 8 to 10 times lower than the TS1003’s crossover
frequency. Additional operational amplifier phase
margin shift can be avoided if the amplifier
bandwidth-to-signal bandwidth ratio is greater than
8.
The design equations for the 2-pole Sallen-Key lowpass filter are given below with component values
selected to set a 400Hz low-pass filter cutoff
frequency:
R1 = R2 = R = 1MΩ
C1 = C2 = C = 400pF
Q = Filter Peaking Factor = 1
f–3dB = 1/(2 x π x RC) = 400 Hz
R3 = R4/(2-1/Q); with Q = 1, R3 = R4.
A Single +1.5 V Supply,
Instrumentation Amplifier
Two
Op
Amp
The TS1003’s ultra-low supply current and ultra-low
voltage operation make it ideal for battery-powered
applications such as the instrumentation amplifier
shown in Figure 4.
When receiving low-level signals, limiting the
bandwidth of the incoming signals into the system is
often required. As shown in Figure 2, the simplest
Figure 4: A Two Op Amp Instrumentation Amplifier.
Figure 2: A Simple, Single-pole Active Low-Pass Filter.
Page 8
TS1003 Rev. 1.0
TS1003
The circuit utilizes the classic two op amp
instrumentation amplifier topology with four resistors
to set the gain. The equation is simply that of a
noninverting amplifier as shown in the figure. The
two resistors labeled R1 should be closely matched
to each other as well as both resistors labeled R2 to
ensure
acceptable
common-mode
rejection
performance.
Resistor networks ensure the closest matching as
well as matched drifts for good temperature stability.
Capacitor C1 is included to limit the bandwidth and,
therefore, the noise in sensitive applications. The
value of this capacitor should be adjusted depending
on the desired closed-loop bandwidth of the
instrumentation amplifier. The RC combination
creates a pole at a frequency equal to 1/(2π×R1C1).
If the AC-CMRR is critical, then a matched capacitor
to C1 should be included across the second resistor
labeled R1.
Because the TS1003 accepts rail-to-rail inputs, the
input common mode range includes both ground
and the positive supply of 1.5V. Furthermore, the
rail-to-rail output range ensures the widest signal
range possible and maximizes the dynamic range of
the system. Also, with its low supply current of
0.6μA, this circuit consumes a quiescent current of
only ~1.3μA, yet it still exhibits a 1-kHz bandwidth at
a circuit gain of 2.
Driving Capacitive Loads
While the TS1003’s internal gain-bandwidth product
is 4kHz, it is capable of driving capacitive loads up to
50pF in voltage follower configurations without any
additional components. In many applications,
however, an operational amplifier is required to drive
much larger capacitive loads. The amplifier’s output
impedance and a large capacitive load create
additional phase lag that further reduces the
amplifier’s phase margin. If enough phase delay is
introduced, the amplifier’s phase margin is reduced.
The effect is quite evident when the transient
response is observed as there will appear noticeable
peaking/ringing in the output transient response.
TS1003 at which these resistor values were
determined empirically was 1.8V. The oscilloscope
capture shown in Figure 6 illustrates a typical
transient response obtained with a CLOAD = 100pF
and an RISO = 120kΩ. Note that as CLOAD is
increased a smaller RISO is needed for optimal
transient response.
Figure 5: Using an External Resistor to Isolate a CLOAD from
the TS1003’s Output
External Capacitive
Load, CLOAD
0-50pF
100pF
500pF
1nF
5nF
10nF
External Output
Isolation Resistor, RISO
Not Required
120kΩ
50kΩ
33kΩ
18kΩ
13kΩ
In the event that an external RLOAD in parallel with
CLOAD appears in the application, the use of an RISO
results in gain accuracy loss because the external
series RISO forms a voltage-divider with the external
load resistor RLOAD.
VIN
VOUT
If the TS1003 is used in an application that requires
driving larger capacitive loads, an isolation resistor
between the output and the capacitive load should
be used as illustrated in Figure 5.
Table 1 illustrates a range of RISO values as a
function of the external CLOAD on the output of the
TS1003. The power supply voltage used on the
TS1003 Rev. 1.0
Page 9
TS1003
Configuring the TS1003 as Microwatt Analog
Comparator
Although optimized for use as an operational
amplifier, the TS1003 can also be used as a rail-torail I/O comparator as illustrated in Figure 7.
of an analog comparator using the TS1003 should
also use as little current as practical. The first step in
the design, therefore, was to set the feedback
resistor R3:
R3 = 10MΩ
Calculating a value for R1 is given by the following
expression:
R1 = R3 x (VHYB/VDD)
Substituting VHYB = 100mV, VDD = 3V, and R3 =
10MΩ into the equation above yields:
Figure 7: A MicroWatt Analog Comparator with UserProgrammable Hysteresis.
External hysteresis can be employed to minimize the
risk of output oscillation. The positive feedback
circuit causes the input threshold to change when
the output voltage changes state. The diagram in
Figure 8 illustrates the TS1003’s analog comparator
R1 = 333 kΩ
The following expression was then used to calculate
a value for R2:
R2 = 1/[VHI/(VREF x R1) – (1/R1) – (1/R3)]
Substituting VHI = 2.1V, VREF = 1.5V, R1 = 333kΩ,
and R3 = 10MΩ into the above expression yields:
R2 = 909 kΩ
Printed Circuit Board Layout Considerations
Figure 8: Analog Comparator Hysteresis Band and Output
Switching Points.
hysteresis band and output transfer characteristic.
The design of an analog comparator using the
TS1003 is straightforward. In this application, a 3-V
power supply (VDD) was used and the resistor divider
network formed by RD1 and RD2 generated a
convenient reference voltage (VREF) for the circuit at
½ the supply voltage, or 1.5V, while keeping the
current drawn by this resistor divider low. Capacitor
C1 is used to filter any extraneous noise that could
couple into the TS1003’s inverting input.
In this application, the desired hysteresis band was
set to 100mV (VHYB) with a desired high trip-point
(VHI) set at 2.1V and a desired low trip-point (VLO)
set at 2V.
Even though the TS1003 operates from a single
0.8V to 5.5V power supply and consumes very little
supply current, it is always good engineering
practice to bypass the power supplies with a 0.1μF
ceramic capacitor placed in close proximity to the
VDD and VSS (or GND) pins.
Good pcb layout techniques and analog ground
plane management improve the performance of any
analog circuit by decreasing the amount of stray
capacitance that could be introduced at the op amp's
inputs and outputs. Excess stray capacitance can
easily couple noise into the input leads of the op
amp and excess stray capacitance at the output will
add to any external capacitive load. Therefore, PC
board trace lengths and external component leads
should be kept a short as practical to any of the
TS1003’s package pins. Second, it is also good
engineering practice to route/remove any analog
ground plane from the inputs and the output pins of
the TS1003.
Since the TS1003 is a very low supply current
amplifier (0.6µA, typical), it is desired that the design
Page 10
TS1003 Rev. 1.0
TS1003
PACKAGE OUTLINE DRAWING
5-Pin SC70 Package Outline Drawing
(N.B., Drawings are not to scale)
0.65 TYP.
0.15 - 0.30
5
2
4
1.80 - 2.40
1
3
2
1.30 TYP.
1.80 - 2.20
1
8º - 12º ALL
SIDE
0.800 – 0.925
LEAD FRAME THICKNESS
0.10 - 0.18
0.40 – 0.55
0.15
TYP.
1.00
MAX
GAUGE PLANE
0.00 - 0.10
1.15 - 1.35
0.10 MAX
0º - 8º
0.26 - 0.46
0.275 - 0.575
NOTES:
1
DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
2
DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS.
3.
DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM.
4
ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA
5.
CONTROLLING DIMENSIONS IN MILIMITERS.
6.
ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA
7.
LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC
TS1003 Rev. 1.0
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TS1003
PACKAGE OUTLINE DRAWING
5-Pin SOT23 Package Outline Drawing
(N.B., Drawings are not to scale)
NOTES:
1. Dimensions and tolerances are as per ANSI Y14.5M, 1982.
2.80 - 3.00
2. Package surface to be matte finish VDI 11~13.
5
3. Die is facing up mold and facing down for trim/form,
ie, reverse trim/form.
0.95 0.950
TYP
4. The foot length measuring is based on the gauge plane method.
5. Dimensions are exclusive of mold flash and gate burr.
2.60 - 3.00
5
1.50 - 1.75
TYP
6. Dimensions are exclusive of solder plating.
7. All dimensions are in mm.
8. This part is compliant with EIAJ spec. and JEDEC MO-178 AA
0.30 - 0.50
9. Lead span/stand off height/coplanarity are considered as special
characteristic.
1.90 Max
10º TYP
1.50 – 1.75
10º TYP
0.09 – 1.45
0.60 – 0.80
0.90 - 1.30
0º- 8º
10º TYP
0.00 - 0.15
10º TYP
0.10 Max
5 0.09 - 0.20
0.25
Gauge Plane
0.30 - 0.55
0.50 – 0.70
0.50 Max
0.30 Min
0.20 Max
0.09 Min
Patent Notice
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Page 12
TS1003 Rev. 1.0
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