2KG026075YQ

2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 100µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag. Ø Chip size: 0.26 X 0.26 (mm)2. 2KG026XXX CHIP TOPOGRAPHY 2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Forward Voltage Reverse Voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VBR IR Cd trr IF=10mA. IF=100mA. IB=100µA. VR=20V. VR=75V. f=1MHz; VR=0. When switched from I F=10mA to VR=6V; RL=100Ω; measured at IR=1mA. --4 ns Test Conditions Min. -0.62 100 ---Typ. -0.9 120 --1.9 Max. 1.0 1.2 -25 5 4 Unit V V V nA µA pF 2KG026075YQ APPEARANCE Top side material is Ag ball Chip Appearance Diagram Parameter Chip Size Chip Thickness Bump Diameter Bump Height Scribe Line Width Symbol D C A B / Min. 220 85 135 20 -- Type ----40 Max. 240 120 160 40 -- Unit µm µm µm µm µm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2006.04.25 Page 1 of 1