2KG028075YQ

2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 120µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag. Ø Chip size: 0.28 X 0.28 (mm2). 2KG028XXX CHIP TOPOGRAPHY 2KG028075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Forward Voltage Reverse voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VBR IR Cd trr IF=10mA. IF=100mA. IB=100µA. VR=20V. VR=75V. f=1MHz; VR=0. When switched from I F=10mA to VR=6V; RL=100Ω; measured at IR=1mA. --4 ns Test Conditions Min. -0.62 100 ---Typ. -0.9 120 --1.9 Max. 1.0 1.2 -25 5 4 Unit V V V nA µA pF 2KG028075YQ APPEARANCE(Top side material is Ag ball) Chip Appearance Diagram Parameter Chip Size Chip Thickness Bump Diameter Bump Height Scribe Line Width Symbol D C A B / Min. 240 100 190 60 -Type ---80 40 Max. 260 140 225 90 -Unit µm µm µm µm µm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2004.10.26 Page 1 of 1