2SB023040MLJY

2SB023040MLJY 2SB023040MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB023040MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:230µm X 230µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size: 230µm; Lb: Pad Size: 140µm; ORDERING SPECIFICATIONS Product Name 2SB023040MLJY Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 40 30 200 125 -40~125 Unit V mA mA °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=1mA VR=30V Min. 40 --Max. -0.37 0.5 Unit V V µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.18 Page 1 of 1