2SB035030MLJY

2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:350µm X 350µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size: 350µm; Lb: Pad Size: 300µm; ORDERING SPECIFICATIONS Product Name 2SB035030MLJY Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 30 200 1 125 -40~125 Unit V mA A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=200mA VR=10V Min. 30 --Max. -0.50 30 Unit V V µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.18 Page 1 of 1