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2SB065030MLJY

2SB065030MLJY

  • 厂商:

    SILAN(士兰)

  • 封装:

  • 描述:

    2SB065030MLJY - 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS - Silan Microelectronics Joint-stock

  • 数据手册
  • 价格&库存
2SB065030MLJY 数据手册
2SB065030MLJY 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; Low forward voltage drop; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:650µm X 650µm; Chip Thickness: 155±20um Gross die:26000 Die/Wafer(5 inch) Product Name 2SB065030MLJY Chip Topography and Dimensions La: Chip Size: 650µm; Lb: Pad Size: 580µm; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package Ø Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 30 0.5 5.5 125 -40~125 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF1 VF2 IR1 IR2 Test Conditions IR=130µA IF=100mA IF=500mA VR=15V VR=30V Min. 30 ----Max. -0.375 0.43 20 130 Unit V V V µA µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.10.24 Page 1 of 1
2SB065030MLJY 价格&库存

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