2SB065040MLJY

2SB065040MLJY 2SB065040MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; Low forward voltage drop; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:650µm X 650µm; Chip Thickness: 155±20um Product Name 2SB065040MLJY Chip Topography and Dimensions La: Chip Size: 650µm; Lb: Pad Size: 580µm; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 40 0.5 5.5 125 -40~125 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF1 VF2 IR Test Conditions IR=20µA IF=500mA IF=1A VR=40V Min. 40 ---Max. -0.51 0.62 20 Unit V V V µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.13 Page 1 of 1