2SB075030MLJL

2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high efficiency; Guard ring construction for transient protection; Low forward voltage drop; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Chip Size:750μm X 750μm; Chip Thickness: 210±20μm; Chip Topography and Dimensions La: Chip Size: 750μm; Lb: Pad Size: 655μm; ORDERING SPECIFICATIONS Product Name 2SB075030MLJL Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 30 1.0 5.5 125 -40~125 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF1 VF2 IR Test Conditions IR=100μA IF=0.7A IF=1.0A VR=30V Min. 30 ---Max. -0.45 0.5 60 Unit V V V μA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.07.28 Page 1 of 1