2SB075040AMLJL

2SB075040AMLJL 2SB075040AMLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB075040AMLJL is a schottky barrier diode Lb technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Ø Chip Size:750µm X 750µm; Chip Topography and Dimensions La: Chip Size: 750µm; Lb: Pad Size: 655µm; Ø Chip Thickness: 210±20µm; ORDERING SPECIFICATIONS Product Name 2SB075040AMLJL Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 40 1 30 125 -40~125 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=100µA IF=1A VR=40V Min. 40 --Max. -0.51 30 Unit V V La chips fabricated in silicon epitaxial planar µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.04.01 Page 1 of 1