2SB083060ML

2SB083060ML 2SB083060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB083060ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; Chip Topography and Dimensions La: Chip Size: 830µm; Lb: Pad Size: 670µm; Ø Chip Size:830µm X 830µm; Chip Thickness: 280±20µm; Ø ORDERING SPECIFICATIONS Product Name 2SB083060MLYY Specification For axial leads package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 60 1 30 125 -40~125 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=1mA IF=1A VR=60V Min. 60 --Max. -0.70 1 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar technology;