2SB108100MA

2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB108100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1080µm X 1080µm; Chip Thickness: 280±20µm; Product Name 2SB108100MAYY Specification For Axial leads package Chip Topography and Dimensions La: Chip Size: 1080µm; Lb: Pad Size: 985µm; ORDERING SPECIFICATIONS Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 2 50 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=1mA IF=2A VR=100V Min. 100 --Max. -0.85 1 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar technology;