2SB267100MA

2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB267100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 2670µm X 2670µm; Chip Thickness: 280±20µm; Have two top side electrode materials for customer to choose, detail refer to ordering specifications. 2SB267100MAYL Product Name 2SB267100MAYY Specification For Axial leads package For Au and AlSi wire bonding package Chip Topography and Dimensions La: Chip Size: 2670µm; Lb: Pad Size: 2470µm; ORDERING SPECIFICATIONS Ø Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 10 150 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=10A VR=100V Min. 100 --Max. -0.85 0.5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1 La fabricated in silicon epitaxial planar technology;