2SF292200HYY

2SF292200HYY 2SF292200HYY FAST RECOVERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Fast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920µm; Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; Ø ORDERING SPECIFICATIONS Product Name 2SF292200HYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward RectifiedCurrent@Tc=150°C Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 200 20 390 175 -55~175 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Current Reverse recovery time Symbol VBR VF1 VF2 IR Trr ) Test Conditions Min. 200 ----Max. -0.84 0.96 25 200 Unit V V V A IR=50 A IF=5A IF=20A VR=200V IF=0.5A,IR=1A;Irr=0.25A ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.06.06 Page 1 of 1