3VD060060NEJL

3VD060060NEJL 3VD060060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Ø Ø Zener diode ESD protected up to 2KV High density cell design for low RDS(ON) Rugged and reliable. Fast switching performance. High saturation current capability. The chips may be packaged in SOT-23 type and the typical equivalent product is 2N7002K. The packaged product is widely used in the small servo motor control, power MOS-FET gate drivers, and other switching applications. Ø Ø Ø Die size: 0.60mm*0.60mm. Chip Thickness: 230±20µm. Top metal : Al, Backside Metal : Au. CHIP TOPOGRAPHY EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (SOT-23) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg Ratings 60 ±20 300 350 150 -55-150 Unit V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance* Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) Test conditions VGS=0V, ID=10µA VDS= VGS, ID=250µA VDS=0V, VGS =±20V VDS=60V, VGS =0V VGS=10V, ID=500mA VGS=5V, ID=50mA Min 60 1 Typ Max Unit V µA µA ----- ------- -2.5 ±10 1 2.0 3.0 Note:* Pulse test, pulse width 300µS, duty cycle 2% HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.03 Page 1 of 1