3VD182600YL

3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60C. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Ø Ø Die size: 1.90mm*1.75mm. Chip Thickness: 300±20µm. Top metal : Al, Backside Metal : Ag. CHIP TOPOGRAPHY Ø ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source voltage Gate-Source Voltage Drain Current Operation Junction Temperature Storage Temperature Symbol VDS VGS ID TJ Tstg Ratings 600 ±30 800 150 -55-150 Unit V V mA ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward on Voltage Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) VFSD Test conditions ID=250uA ID=250uA VDS=VGS VGS=±30V, VDS=0V VDS=600V, VGS=0V ID=0.5A, VGS=10V ID=1.0A,VGS=0V Min 600 2 --------Typ ------------Max ---4 ±100 1 12 1.50 V Unit V V nA µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.08.02 Page 1 of 1