3VD186600YL

3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltageblocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 1.96mm*1.78mm. Chip Thickness: 300±20μm. Top metal : Al, Backside Metal : Ag. CHIP TOPOGRAPHY 1-Gate PAD 3-Source PAD 1 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Operation Junction Temperature Storage Temperature Symbol VDS VGS ID TJ Tstg Ratings 600 ±30 1.0 150 -55-150 Unit V V A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward On Voltage Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) VFSD Test conditions VGS = 0V, ID=250uA ID=250uA ,VDS=VGS VGS=±30V, VDS=0V VDS=600V, VGS=0V ID=0.4A, VGS=10V ID=1.0A,VGS=0V Min. 600 2.0 --------Typ. ------------Max. ---4.0 ±100 1.0 11 1.4 Unit V V nA µA Ω V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1