3VD250600YL

3VD250600YL 3VD250600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD250600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251 type and the typical equivalent product is 2N60. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 2.59mm*2.42mm. Chip Thickness: 300±20μm. Top metal : Al, Backside Metal : Ag. PAD1-Gate PAD3-Source 1 1 3 CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TO-251 Package) Operation Junction Temperature Storage Temperature Symbo l VDS VGS ID PD TJ Tstg Ratings 600 ±30 2.0 44 -55～+150 -55～+150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage Symbo l BVDSS VTH IDSS RDS(on) IGSS VFSD Test conditions VGS=0V, ID=250µA VGS= VDS, ID=250µA VDS=600V, VGS=0V VGS=10V, ID=1.0A VGS=±30V, VDS=0V IS=2.0A, VGS=0V Min. 600 2.0 Typ. 4.1 Max. 4.0 1.0 4.6 ±100 1.4 Unit V V µA Ω nA V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.07.28 Page 1 of 2 3VD250600YL HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.07.28 Page 2 of 2