3VD324600YL

3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; The chips may packaged in TO-220 type and the typical equivalent product is 4N60A; The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers; Die size: 3.78mm*2.78mm; Chip Thickness: 300±20μm; Top metal: Al, Backside Metal: Ag. CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TO-220 Package) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg Ratings 600 ±30 4.0 106 -55～+150 -55～+150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage Symbol BVDSS VTH IDSS RDS(on) IGSS VFSD Test conditions VGS=0V, ID=250µA VGS= VDS, ID=250µA VDS=600V, VGS=0V VGS=10V, ID=2.0A VGS=±30V, VDS=0V IS=4.0A, VGS=0V Min. 600 2.0 Typ. Max. 4.0 1.0 2.1 ±100 1.4 Unit V V µA Ω nA V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1