3VD379600YL

3VD379600YL 3VD379600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD379600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; The chips may packaged in TO-220 type; The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers; Ø Ø Die size: 3.8mm*2.8mm; Chip Thickness: 300±20µm; Top metal : Al, Backside Metal : Ag. 3 1 PAD1:GATE PAD3:SOURCE Ø CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TO-220 Package) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg -55 Ratings 600 ±30 4 106 150 +150 Unit V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage Symbol BVDSS VTH IDSS RDS(on) IGSS VFSD Test conditions VGS=0V, ID=250µA VGS= VDS, ID=250µA VDS=600V, VGS=0V VGS=10V, ID=2A VGS=±30V, VDS=0V IS=4A, VGS=0V Min 600 2 Typ Max 4 1 2.1 ±100 1.4 Unit V V µA Ω nA V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.06.06 Page 1 of 1