SBD20C100F

SBD20C100T/F/K_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F/K is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applications are in switching power supplies and protection circuit etc. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING INFORMATION Part No. Package Marking Material Packing SBD20C100T TO-220-3L SBD20C100T Pb free Tube SBD20C100F TO-220F-3L SBD20C100F Pb free Tube SBD20C100K TO-262-3L SBD20C100K Pb free Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Symbol Value Unit VRRM 100 V Average Forward Rectified Current IFAV 20 A Peak Forward Surge Current@8.3ms IFSM 150 A TJ 150 °C TSTG -40~150 °C Symbol Value Unit RθJC 2.0 °C/W Maximum Repetitive Peak Reverse Voltage Operation Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case ELECTRICAL CHARACTERISTICS Characteristics Symbol Forward Voltage VF Reverse Current IR Test conditions Min. Max. Unit IF=10A (TC=25°C) -- 0.85 V IF=10A(TC=125°C) -- 0.75 V VR=100V(TC=25°C) -- 50 µA VR=100V(TC=125°C) -- 25 mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.7 2012.10.26 Page 1 of 5 Silan Microelectronics SBD20C100T/F/K_Datasheet TYPICAL CHARACTERISTICS Figure 1. Typical forward voltage Figure 2. Typical reverse current 100 100 25°C 100°C 125°C 125°C IR [mA] IF [A] 25°C 10 75°C 10 1 0.1 1 0.1 0.01 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.001 0 1.0 20 40 VF [V] 80 60 100 VR [V] Figure 3. Typical capacitance Figure 4. Average forward rectified current 25 1000 DC 20 IFAV [A] CT [pF] 100 15 10 10 5 F=1MHz 1 1 10 100 VR [V] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 0 0 25 50 75 100 125 150 TC [°C] REV:1.7 2012.10.26 Page 2 of 5 Silan Microelectronics SBD20C100T/F/K_Datasheet PACKAGE OUTLINE TO-220-3L UNIT: mm 4.5±0.2 10.0±0.3 3.7±0.2 3.95MAX 15.1~16.1 6.10~7.00 1.2±0.2 1.30±0.30 13.1±0.5 1.80~2.80 0.80±0.20 0.5±0.2 2.54TYP UNIT: mm 4.72±0.30 10.03±0.30 Φ3.20±0.20 2.55±0.25 15.80±0.50 15.75±0.50 6.70±0.30 3.30±0.25 TO-220F-3L 2.80±0.30 9.80±0.50 1.47MAX 0.80±0.15 0.50±0.15 2.54 TYPE HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.7 2012.10.26 Page 3 of 5 Silan Microelectronics SBD20C100T/F/K_Datasheet PACKAGE OUTLINE (continued) UNIT: mm 10.20±0.08 4.70±0.08 8.84±0.05 8.65±0.10 1.27±0.03 3.78±0.20 1.26±0.06 TO-262-3L 8.76±0.05 1.27±0.05 2.69±0.10 0.81±0.05 0.42±0.05 0.38±0.02 2.54 5.08 Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. • Silan will supply the best possible product for customers! HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.7 2012.10.26 Page 4 of 5 Silan Microelectronics SBD20C100T/F/K_Datasheet ATTACHMENT Revision History Date REV Description 2010.06.09 1.0 2010.08.25 1.1 2010.10.09 1.2 Add TO-220F-3L package of kangbi 2010.10.22 1.3 Modify the template of datasheet 2011.09.01 1.4 Modify “PACKAGE OUTLINE” 2012.05.22 1.5 Add the curve of “Average Forward Rectified Current ” 2012.09.28 1.6 Modify figure 4 2012.10.26 1.7 Add the package of TO-262-3L Original Add TO-220-3L, TO-220F-3L package of youyi; Add TO-220-3L package of kangbi HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn Page REV:1.7 2012.10.26 Page 5 of 5