SVF2N60M

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan TM proprietary F-cell structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. Package Type Marking Material SVF2N60M TO-251-3L SVF2N60M Pb free Tube SVF2N60F TO-220F-3L SVF2N60F Pb free Tube SVF2N60T TO-220-3L SVF2N60T Pb free Tube SVF2N60D TO-252-2L SVF2N60D Pb free Tube SVF2N60DTR TO-252-2L SVF2N60D Pb free Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn Packing REV:1.1 2010.10.21 Page 1 of 10 SVF2N60M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Symbol Rating SVF2N60M/D SVF2N60T SVF2N60F Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 2.0 A Drain Current Pulsed IDM 8 A Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) PD 34 44 23 W 0.27 0.35 0.18 W/°C EAS 115 mJ Operation Junction Temperature TJ -55～+150 °C Storage Temperature Tstg -55～+150 °C THERMAL CHARACTERISTICS Parameter Symbol Rating SVF2N60M/D SVF2N60T SVF2N60F Unit Thermal Resistance, Junction-to-Case RθJC 3.7 2.86 5.56 °C/W Thermal Resistance, Junction-to-Ambient RθJA 110 62.5 120 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Symbol Test conditions Min. Typ. Max. Unit BVDSS VGS=0V, ID=250µA 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA 2.0 -- 4.0 V -- 3.7 4.2 Ω -- 250.1 -- -- 35.7 -- -- 1.1 -- -- 9.2 -- -- 23.4 -- -- 15.3 -- -- 20.1 -- Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=1.0A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=2.0A, RG=25Ω (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=480V,ID=2.0A, -- 5.67 -- Gate-Source Charge Qgs VGS=10V -- 1.74 -- Gate-Drain Charge Qgd -- 1.99 -- HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn (Note 2,3) REV:1.1 pF ns nC 2010.10.21 Page 2 of 10 SVF2N60M/F/T/D_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Continuous Source Current IS Integral Reverse P-N -- -- 2.0 Pulsed Source Current ISM -- -- 8.0 Diode Forward Voltage VSD IS=2.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=2.0A,VGS=0V, -- 230 -- ns Qrr dIF/dt=100A/µS -- 1.0 -- µC Reverse Recovery Charge Junction Diode in the MOSFET Unit A Notes: 1. L=30mH, IAS=2.52A, VDD=145V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 3 of 10 Drain-Source On-Resistance – RDS(on)(Ω) Reverse Drain Current – IDR(A) Capasistance(pF) Gate-Source Voltage– VGS(V) Http://www.silan.com.cn Drain Current – ID(A) Drain Current – ID(A) SVF2N60M/F/T/D_Datasheet TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Page 4 of 10 SVF2N60M/F/T/D_Datasheet TYPICAL CHARACTERISTICS (CONTINUED) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 5 of 10 SVF2N60M/F/T/D_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 50KΩ Qg 10V VDS 200nF 12V VGS Same Type as DUT 300nF Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG DUT 10% VGS 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform EAS = L VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS RG DUT 10V ID(t) VDD tp VDS(t) VDD Time tp HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 6 of 10 SVF2N60M/F/T/D_Datasheet PACKAGE OUTLINE TO-220-3L UNIT: mm TO-251-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 7 of 10 SVF2N60M/F/T/D_Datasheet PACKAGE OUTLINE (continued) TO-220F-3L(One) UNIT: mm TO-220F-3L(Two) UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 8 of 10 SVF2N60M/F/T/D_Datasheet PACKAGE OUTLINE (continued) TO-252-2L UNIT: mm Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. • All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. • Silan will supply the best possible product for customers! HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 9 of 10 SVF2N60M/F/T/D_Datasheet ATTACHMENT Revision History Date REV 2010.09.20 1.0 2010.10.21 1.1 Description Original Modify “TYPICAL CHARACTERISTICS”, “PACKAGE OUTLINE”, the template of Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn Page REV:1.1 2010.10.21 Page 10 of 10