SVS11N65FJD2

SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A,650V, RDS(on)(typ.)=0.33@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS11N65FJD2 Package Marking TO-220FJ-3L 11N65FJD2 Hazardous Substance Control Halogen free Packing Tube ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC=25°C Drain Current TC=100°C Drain Current Pulsed ID IDM 11 7 A 44 A 23 W 0.18 W/C EAS 250 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note 1) PD HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 7 SVS11N65FJD2_Datasheet THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 5.43 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Symbol Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=5.5A -- 0.33 0.4  -- 581.78 -- -- 45.12 -- -- 3.37 -- VDD=325V, VGS=10V, -- 11.20 -- RG=24Ω, ID=11A -- 31.24 -- -- 62.20 -- -- 31.24 -- Gate Threshold Voltage Static Drain- Source on State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Test conditions f=1MHz,VGS=0V, VDS=100V (Note 2,3) pF ns Turn-off Fall Time tf Total Gate Charge Qg VDD=520V, VGS=10V, -- 20.76 -- Gate-Source Charge Qgs ID=11A -- 4.13 -- Gate-Drain Charge Qgd -- 10.88 -- Min. Typ. Max. -- -- 11 -- 44 (Note 2,3) nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Symbol IS Test conditions Integral Reverse Junction Diode P-N in the Unit A Pulsed Source Current ISM MOSFET -- Diode Forward Voltage VSD IS=11A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=11A,VGS=0V, -- 450 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 4.5 -- µC Notes: 1. L=79mH,IAS=2.4A,VDD=100V, RG=25, starting temperature TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 2 of 7 SVS11N65FJD2_Datasheet TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=10V VGS=15V 10 Drain Current – ID(A) Drain Current – ID(A) Figure 2. Transfer Characteristics 100 100 1 1 10 10 1 Notes: 1.250µS pulse test 2.VDS=50V Notes: 1.250µS pulse test 2.TC=25°C 0.1 0.1 -55°C 25°C 150°C 0.1 100 2 Drain-Source Voltage – VDS(V) Reverse Drain Current – IDR(A) Drain-Source On-Resistance – RDS(ON)(Ω) 0.36 0.34 0.32 Note: TJ=25°C 6 8 10 -55°C 25°C 150°C 10 1 Notes: 1.250µS pulse test 2.VGS=0V 0.1 0.2 0.30 4 12 Drain Current – ID(A) Figure 5. Capacitance Characteristics 0.6 0.8 1.0 1.2 1.4 Figure 6. Gate Charge Characteristics 12 Gate-Source Voltage– VGS(V) Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 3500 Capacitance(pF) 0.4 Source-Drain Voltage– VSD(V) 4000 3000 2500 Notes： 1. VGS=0V 2. f=1MHz Ciss Coss Crss 2000 1500 1000 500 0 10 100 VGS=10V VGS=20V 2 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.40 0 6 Gate-Source Voltage– VGS(V) Figure 3. On-Resistance Variation vs. Drain Current 0.38 4 VDS=130V VDS=325V VDS=520V 10 8 6 4 2 Note：ID=11.0A 0 0 1 10 100 Drain-Source Voltage – VDS(V) HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn 0 10 20 30 Total Gate Charge – Qg(nC) Rev.:1.2 Page 3 of 7 SVS11N65FJD2_Datasheet 1.2 Figure 7. Breakdown Voltage Variation vs. Temperature 1.1 1.0 0.9 Notes: 1. VGS=0V 2. ID=250µA 0.8 -100 -50 0 50 100 150 3.0 Drain-Source On-Resistance – RDS(ON)(Normalized) Drain-Source Breakdown Voltage– BVDSS(Normalized) TYPICAL CHARACTERISTICS(continued) 200 Junction Temperature – TJ(°C) Figure 8. On-resistance Variation vs. Temperature 2.5 2.0 1.5 1.0 Notes: 1. VGS=10V 2. ID=5.5A 0.5 0.0 -100 -50 0 50 100 150 200 Junction Temperature – TJ(°C) Figure 9. Max. Safe Operating Area 102 Drain Current - ID(A) 100µs 1 10 1ms 100 10ms DC 10 -1 Operation in This Area is Limited by RDS(ON) Note: TC=25°C 10-2 100 101 102 103 Drain Source Voltage - VDS(V) HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 4 of 7 SVS11N65FJD2_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 10V VDS 200nF 12V 300nF Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG DUT 10% VGS 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform EAS = L VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS RG DUT 10V ID(t) VDD VDS(t) VDD tp tp HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Time Rev.:1.2 Page 5 of 7 SVS11N65FJD2_Datasheet PACKAGE OUTLINE(continued) TO-220FJ-3L UNIT: mm Disclaimer :  Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.  All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.  Silan will supply the best possible product for customers! HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 6 of 7 SVS11N65FJD2_Datasheet Part No.: SVS11N65FJD2 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: Rev.: 1.2 http: //www.silan.com.cn Revision History: 1. Modify Electrical characteristics 2. Update Fig.5 and Fig.6 Rev.: 1.0 Revision History: 1. Preliminary HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 7 of 7