SSBR10100CT SSBR10100CTF
Main Product Characteristics:
IF VRRM Tj(max) Vf(max) 2×5A 100V 150C 0.8V
Features and Benefits:
High Junction Temperature High ESD Protection, IEC Model ±10Kv High Forward & Reverse Surge capability
TO220 SSBR10100CT TO220F SSBR10100CTF
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol VRRM VR(RMS) IF(AV) IFSM IRRM TJ Tstg Symbol RθJC RθJC Symbol VR VF IR RMS Reverse Voltage Average Forward Current Per diode Per device Characterizes Peak Repetitive Reverse Voltage Value 100 70 5 10 120 1 -50~150 -50~150 Value TO220 TO220F Max 0.8 0.75 0.1 5 Unit V V mA 2 4 Unit V V A A A A ℃ ℃ Unit ℃/W ℃/W
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) Peak Repetitive Reverse Surge Current(Tp=2us) Maximum operation Junction Temperature Range Storage Temperature Range Characterizes Maximum Thermal Resistance Junction To Case Characterizes Reverse Breakdown Voltage Forward Voltage Drop Leakage Current Min 100 Typ
Thermal Resistance
Electrical Characterizes @TA=25℃ unless otherwise specified
Test Condition IR=0.5mA IF=5A, TJ=25℃ IF=5A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃
©Silikron Semiconductor CO.,LTD.
2009.5.15 www.silikron.com
Version : 1.0
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SSBR10100CT SSBR10100CTF
Mechanical Data:
TO220
TO220F:
©Silikron Semiconductor CO.,LTD.
2009.5.15 www.silikron.com
Version : 1.0
page
2of2
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